| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate silicon dummy structure model for nonlinear microwave FinFET modeling
|
Crupi, Giovanni
|
|
2010
|
41 |
9 |
p. 574-578
5 p.
|
artikel
|
| 2 |
A CMOS low-voltage low-power temperature sensor
|
Crepaldi, Paulo Cesar
|
|
2010
|
41 |
9 |
p. 594-600
7 p.
|
artikel
|
| 3 |
Analytical modeling of high performance single-walled carbon nanotube field-effect-transistor
|
Chek, Desmond C.Y.
|
|
2010
|
41 |
9 |
p. 579-584
6 p.
|
artikel
|
| 4 |
Dual approach for bipolar transistor thermal impedance determination
|
Sommet, R.
|
|
2010
|
41 |
9 |
p. 554-559
6 p.
|
artikel
|
| 5 |
Dual- V t assignment policies in ITD-aware synthesis
|
Calimera, A.
|
|
2010
|
41 |
9 |
p. 547-553
7 p.
|
artikel
|
| 6 |
Editorial board
|
|
|
2010
|
41 |
9 |
p. IFC-
1 p.
|
artikel
|
| 7 |
Evaluation of short pulse and short time thermal transient measurements
|
Székely, V.
|
|
2010
|
41 |
9 |
p. 560-565
6 p.
|
artikel
|
| 8 |
Fast field solver for the simulation of large-area OLEDs
|
Pohl, László
|
|
2010
|
41 |
9 |
p. 566-573
8 p.
|
artikel
|
| 9 |
[No title]
|
Székely, Vladimír
|
|
2010
|
41 |
9 |
p. 539-
1 p.
|
artikel
|
| 10 |
Power analysis and design of wide dynamic range CMOS imaging sensors
|
Yuan, Jie
|
|
2010
|
41 |
9 |
p. 585-593
9 p.
|
artikel
|
| 11 |
Ultra-high temperature (>300°C) suspended thermodiode in SOI CMOS technology
|
Santra, S.
|
|
2010
|
41 |
9 |
p. 540-546
7 p.
|
artikel
|
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