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                             55 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 An approach based on particle swarm computation to study the electron mobility in wurtzite GaN Djeffal, F.
 2009
 40 2 p. 357-359
3 p.
 artikel
2 Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers Arnaudov, B.
 2009
 40 2 p. 346-348
3 p.
 artikel
3 Biphasic GaN nanowires: Growth mechanism and properties Halpern, J.B.
 2009
 40 2 p. 316-318
3 p.
 artikel
4 Bound and free excitons in ZnO. Optical selection rules in the absence and presence of time reversal symmetry Wagner, M.R.
 2009
 40 2 p. 289-292
4 p.
 artikel
5 Bright CdSe quantum dot inserted in single ZnSe nanowires Tribu, A.
 2009
 40 2 p. 253-255
3 p.
 artikel
6 Carbothermal reduction growth of ZnO nanostructures on sapphire—comparisons between graphite and activated charcoal powders Biswas, M.
 2009
 40 2 p. 259-261
3 p.
 artikel
7 Characterization of ZnO and ZnO:Al films deposited by MOCVD on oriented and amorphous substrates Fragala, Maria Elena
 2009
 40 2 p. 381-384
4 p.
 artikel
8 Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures Kudrawiec, R.
 2009
 40 2 p. 370-372
3 p.
 artikel
9 Correlation between nitrogen and carbon incorporation into MOVPE ZnO at various oxidizing conditions Zhu, J.J.
 2009
 40 2 p. 232-235
4 p.
 artikel
10 Cubic group-III nitride-based nanostructures—basics and applications in optoelectronics As, D.J.
 2009
 40 2 p. 204-209
6 p.
 artikel
11 Deep-level defects study of arsenic-implanted ZnO single crystal Zhu, C.Y.
 2009
 40 2 p. 286-288
3 p.
 artikel
12 Editorial board 2009
 40 2 p. IFC-
1 p.
 artikel
13 Effect of annealing on Zn1− x Co x O thin films prepared by electrodeposition El Manouni, A.
 2009
 40 2 p. 268-271
4 p.
 artikel
14 Effect of hydrogenation on the cathodoluminescence properties of ZnO single crystals Dierre, B.
 2009
 40 2 p. 262-264
3 p.
 artikel
15 Effects of internal fields on deep-level emission in InGaN/GaN quantum-well light-emitting diodes Rigutti, L.
 2009
 40 2 p. 331-332
2 p.
 artikel
16 Elaboration and characterization of Co-doped ZnO thin films deposited by spray pyrolysis technique Belghazi, Y.
 2009
 40 2 p. 265-267
3 p.
 artikel
17 Electrodepositing Zn x Mn y O z alloys from zinc oxide to manganese oxide Mollar, M.
 2009
 40 2 p. 276-279
4 p.
 artikel
18 Electron field emission from ZnO self-organized nanostructures and doped ZnO:Ga nanostructured films Karpyna, V.A.
 2009
 40 2 p. 229-231
3 p.
 artikel
19 Electronic transport through GaN/AlN single barriers: Effect of polarisation and dislocations Leconte, S.
 2009
 40 2 p. 339-341
3 p.
 artikel
20 Exciton spectroscopy on single CdSe/ZnSe quantum dot photodiodes de Vasconcellos, S. Michaelis
 2009
 40 2 p. 215-217
3 p.
 artikel
21 Exciton spin dynamics in zinc-blende GaN/AlN quantum dots: Temperature dependence Lagarde, D.
 2009
 40 2 p. 328-330
3 p.
 artikel
22 GaN membrane-supported UV photodetectors manufactured using nanolithographic processes Müller, A.
 2009
 40 2 p. 319-321
3 p.
 artikel
23 Growth and characterization of ZnO nanowires on p-type GaN Robin, I.C.
 2009
 40 2 p. 250-252
3 p.
 artikel
24 Growth of high-quality, uniform c-axis-oriented zinc oxide nano-wires on a-plane sapphire substrate with zinc oxide templates Reiser, A.
 2009
 40 2 p. 306-308
3 p.
 artikel
25 Growth temperature effect on MOVPE Si-doped GaN: Thermodynamic modeling Touré, A.
 2009
 40 2 p. 363-366
4 p.
 artikel
26 Influence of anisotropic strain on excitonic transitions in a-plane GaN films Buchheim, C.
 2009
 40 2 p. 322-324
3 p.
 artikel
27 Influence of the AlN molar fraction on the structural and optical properties of praseodymium-doped Al x Ga1− x N (0⩽x⩽1) alloys Peres, M.
 2009
 40 2 p. 377-380
4 p.
 artikel
28 Insulating substrates for cubic GaN-based HFETs Tschumak, E.
 2009
 40 2 p. 367-369
3 p.
 artikel
29 Investigation of ZnO nanopillars fabrication in a new Thomas Swan close coupled showerhead MOCVD reactor Behrends, A.
 2009
 40 2 p. 280-282
3 p.
 artikel
30 Investigation on doping behavior of copper in ZnO thin film Kim, Gun Hee
 2009
 40 2 p. 272-275
4 p.
 artikel
31 Investigations of photo-assisted conductive atomic force microscopy on III-nitrides Chang, Mao-Nan
 2009
 40 2 p. 353-356
4 p.
 artikel
32 Low-threshold ZnSe microdisk laser based on fluorine impurity bound-exciton transitions Pawlis, A.
 2009
 40 2 p. 256-258
3 p.
 artikel
33 Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates Andersson, T.G.
 2009
 40 2 p. 360-362
3 p.
 artikel
34 Metal-organic vapour-phase epitaxy of gallium nitride nanostructures for optoelectronic applications Fündling, S.
 2009
 40 2 p. 333-335
3 p.
 artikel
35 Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs Panfilova, M.
 2009
 40 2 p. 221-223
3 p.
 artikel
36 Microstructure analysis in strained-InGaN/GaN multiple quantum wells Lei, Huaping
 2009
 40 2 p. 342-345
4 p.
 artikel
37 Morphology and growth mechanism of aligned ZnO nanorods grown by catalyst-free MOCVD Rosina, M.
 2009
 40 2 p. 242-245
4 p.
 artikel
38 Non-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5μm Naranjo, F.B.
 2009
 40 2 p. 349-352
4 p.
 artikel
39 Optical and electrical characterizations of vertically integrated ZnO nanowires Latu-Romain, E.
 2009
 40 2 p. 224-228
5 p.
 artikel
40 Optical properties of ZnO thin films prepared by sol–gel process Petersen, J.
 2009
 40 2 p. 239-241
3 p.
 artikel
41 PAMBE growth of (112¯2)-oriented GaN/AlN nanostructures on m-sapphire Lahourcade, L.
 2009
 40 2 p. 325-327
3 p.
 artikel
42 PL study of oxygen defect formation in ZnO nanorods Chandrinou, C.
 2009
 40 2 p. 296-298
3 p.
 artikel
43 Role of surface oxygen vacancies in photoluminescence of tin dioxide nanobelts Trani, F.
 2009
 40 2 p. 236-238
3 p.
 artikel
44 Strain effects in GaN/AlN multi-quantum-well structures for infrared optoelectronics Kandaswamy, P.K.
 2009
 40 2 p. 336-338
3 p.
 artikel
45 Structural and magnetic study of hard–soft systems with ZnO barrier grown by pulsed laser deposition Bieber, H.
 2009
 40 2 p. 246-249
4 p.
 artikel
46 Structural and optical properties on thulium-doped LHPG-grown Ta2O5 fibres Macatrão, M.
 2009
 40 2 p. 309-312
4 p.
 artikel
47 Studies of defect states of ZnO thin films under different annealing conditions Song, Hooyoung
 2009
 40 2 p. 313-315
3 p.
 artikel
48 Study of magnetic impurity as defects in ZnO grown by pulsed laser deposition Kim, Jae-Hoon
 2009
 40 2 p. 283-285
3 p.
 artikel
49 Surface planarization of ZnO thin film for optoelectronic applications Lee, Woo-Sun
 2009
 40 2 p. 299-302
4 p.
 artikel
50 Synthesis of GaN nanowires and nanorods via self-growth mode control Kang, S.M.
 2009
 40 2 p. 373-376
4 p.
 artikel
51 The influence of growth temperature and precursors’ doses on electrical parameters of ZnO thin films grown by atomic layer deposition technique Krajewski, T.
 2009
 40 2 p. 293-295
3 p.
 artikel
52 The role of stacking faults and their associated 0.13ev acceptor state in doped and undoped ZnO layers and nanostructures Thonke, K.
 2009
 40 2 p. 210-214
5 p.
 artikel
53 Well-width dependence of the phase coherent photorefractive effect in ZnSe quantum wells Kabir, A.
 2009
 40 2 p. 303-305
3 p.
 artikel
54 Wide band gap semiconductor nanostructures for optoelectronic applications Lischka, K.
 2009
 40 2 p. 203-
1 p.
 artikel
55 ZnO clusters: Laser ablation production and time-of-flight mass spectroscopic study Dmytruk, A.
 2009
 40 2 p. 218-220
3 p.
 artikel
                             55 gevonden resultaten
 
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