| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A broadband RF 65nm CMOS front-end for cable TV reception
|
Pifferi, Marco
|
|
2008
|
39 |
5 |
p. 703-710
8 p.
|
artikel
|
| 2 |
A circuit-compatible analytical device model for ballistic nanowire transistors
|
Chen, Jinghong
|
|
2008
|
39 |
5 |
p. 750-755
6 p.
|
artikel
|
| 3 |
A low-power ADPLL using feedback DCO quarterly disabled in time domain
|
Wang, Chua-Chin
|
|
2008
|
39 |
5 |
p. 832-840
9 p.
|
artikel
|
| 4 |
A MEMS-based piezoelectric power generator array for vibration energy harvesting
|
Liu, Jing-Quan
|
|
2008
|
39 |
5 |
p. 802-806
5 p.
|
artikel
|
| 5 |
A novel linearly tunable butterfly-shape MEMS capacitor
|
Shavezipur, M.
|
|
2008
|
39 |
5 |
p. 756-762
7 p.
|
artikel
|
| 6 |
A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation
|
Sutikno, M.
|
|
2008
|
39 |
5 |
p. 727-731
5 p.
|
artikel
|
| 7 |
A study of electron transition in the energy gap of SI-GaAs with photoconductivity spectra and under α-particle irradiation
|
Zardas, G.E.
|
|
2008
|
39 |
5 |
p. 737-739
3 p.
|
artikel
|
| 8 |
Center embossed diaphragm design guidelines and Fabry–Perot diaphragm fiber optic sensor
|
Sun, Yan
|
|
2008
|
39 |
5 |
p. 711-716
6 p.
|
artikel
|
| 9 |
Design methodology for configurable analog to digital conversion using support vector machines
|
Girish, V.
|
|
2008
|
39 |
5 |
p. 822-827
6 p.
|
artikel
|
| 10 |
Design of a low-power, high performance, 8×8bit multiplier using a Shannon-based adder cell
|
Senthilpari, C.
|
|
2008
|
39 |
5 |
p. 812-821
10 p.
|
artikel
|
| 11 |
Editorial board
|
|
|
2008
|
39 |
5 |
p. IFC-
1 p.
|
artikel
|
| 12 |
Effective hole-injection layer for non-doped inverted top-emitting organic light-emitting devices
|
Meng, Yanlong
|
|
2008
|
39 |
5 |
p. 723-726
4 p.
|
artikel
|
| 13 |
Effect of ammoniating temperature on structural and morphologic properties of nanostructured GaN
|
Zhuang, Huizhao
|
|
2008
|
39 |
5 |
p. 807-811
5 p.
|
artikel
|
| 14 |
Excitation of hypersound in n-GaN films
|
Diaz, F.
|
|
2008
|
39 |
5 |
p. 740-743
4 p.
|
artikel
|
| 15 |
Fabrication of a new micro bio chip and flow cell cytometry system using Bio-MEMS technology
|
Byun, Insoo
|
|
2008
|
39 |
5 |
p. 717-722
6 p.
|
artikel
|
| 16 |
Improved field emission characteristic of carbon nanotubes by an Ag micro-particle intermediation layer
|
Lu, Wenhui
|
|
2008
|
39 |
5 |
p. 782-785
4 p.
|
artikel
|
| 17 |
Influence of ionizing radiation in electronic and optoelectronic properties of III–V semiconductor compounds
|
Yannakopoulos, P.H.
|
|
2008
|
39 |
5 |
p. 732-736
5 p.
|
artikel
|
| 18 |
Interaction of α radiation with iron-doped n-type silicon
|
Khizar-ul-Haq,
|
|
2008
|
39 |
5 |
p. 797-801
5 p.
|
artikel
|
| 19 |
Micro FET pressure sensor manufactured using CMOS-MEMS technique
|
Dai, Ching-Liang
|
|
2008
|
39 |
5 |
p. 744-749
6 p.
|
artikel
|
| 20 |
Piezoresistive effect in GaAs/In x Ga1− x As/AlAs resonant tunneling diodes for application in micromechanical sensors
|
Jijun, Xiong
|
|
2008
|
39 |
5 |
p. 771-776
6 p.
|
artikel
|
| 21 |
Preliminary study on pyroelectric lithium tantalite by a novel electrostatic spray pyrolysis technique
|
Youssef, S.
|
|
2008
|
39 |
5 |
p. 792-796
5 p.
|
artikel
|
| 22 |
Silicon nano-particles in SiO2 sol–gel film for nano-crystal memory device applications
|
Dima, A.
|
|
2008
|
39 |
5 |
p. 768-770
3 p.
|
artikel
|
| 23 |
Stark effect of electrons in semiconducting rectangular quantum boxes
|
Wei, Guozhu
|
|
2008
|
39 |
5 |
p. 786-791
6 p.
|
artikel
|
| 24 |
Study on the vacuum breakdown in field emission of a nest array of multi-walled carbon nanotube/silicon nanoporous pillar array
|
Jiang, Wei Fen
|
|
2008
|
39 |
5 |
p. 763-767
5 p.
|
artikel
|
| 25 |
Switching times variation of MOSFET devices with temperature and high-field stress
|
Habchi, R.
|
|
2008
|
39 |
5 |
p. 828-831
4 p.
|
artikel
|
| 26 |
Techniques for cancellation of interfering multiple reflections in terahertz time-domain measurements
|
Hirsch, Ole
|
|
2008
|
39 |
5 |
p. 841-848
8 p.
|
artikel
|
| 27 |
The influence of 1nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure
|
Guo, Lunchun
|
|
2008
|
39 |
5 |
p. 777-781
5 p.
|
artikel
|
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