| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A low-power and high-gain fully integrated CMOS LNA
|
Toofan, S.
|
|
2007
|
38 |
12 |
p. 1150-1155
6 p.
|
artikel
|
| 2 |
Beating of the oscillations in the magnetocapacitance of a MODFET with Rasba spin–orbit interaction
|
Kliros, G.S.
|
|
2007
|
38 |
12 |
p. 1161-1168
8 p.
|
artikel
|
| 3 |
Bistable hybrids in sol–gel technology for switching devices
|
Dima, Antonela
|
|
2007
|
38 |
12 |
p. 1169-1174
6 p.
|
artikel
|
| 4 |
Design, fabrication and performance of a new vibration-based electromagnetic micro power generator
|
Wang, Pei-Hong
|
|
2007
|
38 |
12 |
p. 1175-1180
6 p.
|
artikel
|
| 5 |
Editorial Board
|
|
|
2007
|
38 |
12 |
p. CO2-
1 p.
|
artikel
|
| 6 |
Effect of packing on the cluster nature of C nanotubes: An information entropy analysis
|
Torrens, Francisco
|
|
2007
|
38 |
12 |
p. 1109-1122
14 p.
|
artikel
|
| 7 |
Fabrication and characterization of a microelectromechanical tunable capacitor
|
Dai, Ching-Liang
|
|
2007
|
38 |
12 |
p. 1257-1262
6 p.
|
artikel
|
| 8 |
Fabrication of ZnO nanorod-based hydrogen gas nanosensor
|
Lupan, Oleg
|
|
2007
|
38 |
12 |
p. 1211-1216
6 p.
|
artikel
|
| 9 |
Formation of porous InP by cathodic decomposition
|
Weng, Zhankun
|
|
2007
|
38 |
12 |
p. 1191-1195
5 p.
|
artikel
|
| 10 |
High doped MBE Si p–n and n–n heterojunction diodes on 4H-SiC
|
Pérez-Tomás, A.
|
|
2007
|
38 |
12 |
p. 1233-1237
5 p.
|
artikel
|
| 11 |
Implantable stimulator and recording device for artificial prosthesis control
|
Sacristán-Riquelme, Jordi
|
|
2007
|
38 |
12 |
p. 1135-1149
15 p.
|
artikel
|
| 12 |
Integration of interdigital-gated plasma wave device for proximity communication system application
|
Hashim, Abdul Manaf
|
|
2007
|
38 |
12 |
p. 1263-1267
5 p.
|
artikel
|
| 13 |
Light emission from semiconductor triode
|
Mil'shtein, S.
|
|
2007
|
38 |
12 |
p. 1217-1219
3 p.
|
artikel
|
| 14 |
Low-pressure H2/N2 annealing on indium tin oxide film
|
Chang, Shang-Chou
|
|
2007
|
38 |
12 |
p. 1220-1225
6 p.
|
artikel
|
| 15 |
Macro-modeling for the compact simulation of single electron transistor using SIMPLORER
|
Troudi, M.
|
|
2007
|
38 |
12 |
p. 1156-1160
5 p.
|
artikel
|
| 16 |
Narrow-band low-noise amplifier synthesis for high-performance system-on-chip design
|
Nieuwoudt, Arthur
|
|
2007
|
38 |
12 |
p. 1123-1134
12 p.
|
artikel
|
| 17 |
Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier
|
Manaf Hashim, Abdul
|
|
2007
|
38 |
12 |
p. 1268-1272
5 p.
|
artikel
|
| 18 |
On the device design assessment of multigate FETs (MuGFETs) using full process and device simulation with 3D TCAD
|
Nawaz, Muhammad
|
|
2007
|
38 |
12 |
p. 1238-1251
14 p.
|
artikel
|
| 19 |
Optimization of Al/a-SiC:H optical sensor device by means of thermal annealing
|
Magafas, L.
|
|
2007
|
38 |
12 |
p. 1196-1201
6 p.
|
artikel
|
| 20 |
Organic thin-film field-effect transistors with MoO3/Al electrode and OTS/SiO2 bilayer gate insulator
|
Bai, Y.
|
|
2007
|
38 |
12 |
p. 1185-1190
6 p.
|
artikel
|
| 21 |
Photoluminescence studies from micropillars fabricated on IV–VI multiple quantum-well semiconductor structure
|
Mukherjee, S.
|
|
2007
|
38 |
12 |
p. 1181-1184
4 p.
|
artikel
|
| 22 |
Sensing behavior and mechanism of titanium dioxide-based MOS hydrogen sensor
|
Yadav, Lallan
|
|
2007
|
38 |
12 |
p. 1226-1232
7 p.
|
artikel
|
| 23 |
Simulation and experimental results on the forward J–V characteristic of Al implanted 4H–SiC p–i–n diodes
|
Della Corte, Francesco G.
|
|
2007
|
38 |
12 |
p. 1273-1279
7 p.
|
artikel
|
| 24 |
Smooth indium zinc oxide film prepared by sputtering a In2O3:ZnO=95:5 target
|
Chang, Shang-Chou
|
|
2007
|
38 |
12 |
p. 1202-1206
5 p.
|
artikel
|
| 25 |
Studies on the properties of sputter-deposited Ag-doped ZnO films
|
Sahu, D.R.
|
|
2007
|
38 |
12 |
p. 1252-1256
5 p.
|
artikel
|
| 26 |
Temperature-controlled self-organized InP nanostructures grown on GaAs(100) substrate by MOCVD
|
Zhou, J.
|
|
2007
|
38 |
12 |
p. 1207-1210
4 p.
|
artikel
|
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