nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A modified model for Si/SiGe MOS-gate delta-doped HEMTs
|
Alam, Mohmmad T. |
|
2006 |
37 |
9 |
p. 938-942 5 p. |
artikel |
2 |
An analytical model for discretized doped InAlAs/InGaAs heterojunction HEMT for higher cut-off frequency and reliability
|
Gupta, Ritesh |
|
2006 |
37 |
9 |
p. 919-929 11 p. |
artikel |
3 |
A new analytical model for optimizing SOI LDMOS with step doped drift region
|
Guo, Yufeng |
|
2006 |
37 |
9 |
p. 861-866 6 p. |
artikel |
4 |
An integrated 0.35μm CMOS optical receiver with clock and data recovery circuit
|
Chen, Yi-Ju |
|
2006 |
37 |
9 |
p. 985-992 8 p. |
artikel |
5 |
An overview of feed-forward design techniques for high-gain wideband operational transconductance amplifiers
|
Thandri, Bharath Kumar |
|
2006 |
37 |
9 |
p. 1018-1029 12 p. |
artikel |
6 |
Bright green organic light-emitting devices having a composite electron transport layer
|
Wang, Fangcong |
|
2006 |
37 |
9 |
p. 916-918 3 p. |
artikel |
7 |
Characterization of QWIP structures prepared on GaAs-patterned substrates
|
Štrichovanec, P. |
|
2006 |
37 |
9 |
p. 888-891 4 p. |
artikel |
8 |
Device preparation and characterization of drain current transients in static induction micro transistors
|
Joseph, C.M. |
|
2006 |
37 |
9 |
p. 884-887 4 p. |
artikel |
9 |
Editorial board
|
|
|
2006 |
37 |
9 |
p. CO2- 1 p. |
artikel |
10 |
Effects of substrate temperature on electrical and structural properties of copper thin films
|
Chan, Kah-Yoong |
|
2006 |
37 |
9 |
p. 930-937 8 p. |
artikel |
11 |
Electronic properties of GST for non-volatile memory
|
Lv, Hangbing |
|
2006 |
37 |
9 |
p. 982-984 3 p. |
artikel |
12 |
Experimental method and FE simulation model for evaluation of wafer probing parameters
|
Liu, D.S. |
|
2006 |
37 |
9 |
p. 871-883 13 p. |
artikel |
13 |
Fabrication and performance of a micromachined 3-D solenoid inductor
|
Fang, Dong-Ming |
|
2006 |
37 |
9 |
p. 948-951 4 p. |
artikel |
14 |
Field emission characteristics of an oxidized porous polysilicon field emitter using the electrochemical oxidation process
|
Kwon, Soon-Il |
|
2006 |
37 |
9 |
p. 993-996 4 p. |
artikel |
15 |
GaAs substrate orientation dependence of resonant quasi-level lifetime in 2D–2D InGaAs/GaAs resonant tunneling devices
|
Bouzaïene, L. |
|
2006 |
37 |
9 |
p. 892-896 5 p. |
artikel |
16 |
Generalized Fibonacci quasi photonic crystals and generation of superimposed Bragg Gratings for optical communication
|
Rostami, A. |
|
2006 |
37 |
9 |
p. 897-903 7 p. |
artikel |
17 |
High linearity CMOS mixer for domotic 5GHz WLAN sliding-IF receivers
|
Pifferi, M. |
|
2006 |
37 |
9 |
p. 1012-1017 6 p. |
artikel |
18 |
High-temperature and self-heating effects in fully depleted SOI MOSFETs
|
Goel, A.K. |
|
2006 |
37 |
9 |
p. 963-975 13 p. |
artikel |
19 |
Hot-Probe method for evaluation of impurities concentration in semiconductors
|
Golan, G. |
|
2006 |
37 |
9 |
p. 910-915 6 p. |
artikel |
20 |
Interface electric charge modelling and characterization with δ – distribution generator strings in thin SOI films
|
Ravariu, C. |
|
2006 |
37 |
9 |
p. 943-947 5 p. |
artikel |
21 |
Low-swing current mode logic (LSCML): A new logic style for secure and robust smart cards against power analysis attacks
|
Hassoune, Ilham |
|
2006 |
37 |
9 |
p. 997-1006 10 p. |
artikel |
22 |
Low threshold and tunable all-optical switch using two-photon absorption in array of nonlinear ring resonators coupled to MZI
|
Rostami, A. |
|
2006 |
37 |
9 |
p. 976-981 6 p. |
artikel |
23 |
Power dissipation sources and possible control techniques in ultra deep submicron CMOS technologies
|
Ekekwe, Ndubuisi |
|
2006 |
37 |
9 |
p. 851-860 10 p. |
artikel |
24 |
Q-based design method for T network impedance matching
|
Chung, B.K. |
|
2006 |
37 |
9 |
p. 1007-1011 5 p. |
artikel |
25 |
Quadratic electro-optic effects and electro-absorption process in InGaN/GaN cylinder quantum dots
|
Wang, Chunxia |
|
2006 |
37 |
9 |
p. 847-850 4 p. |
artikel |
26 |
Quantum size dependent optical nutation in a core-shell CdSe/ZnS quantum dot
|
Gong, Shaohua |
|
2006 |
37 |
9 |
p. 904-909 6 p. |
artikel |
27 |
The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs
|
Camillo, L.M. |
|
2006 |
37 |
9 |
p. 952-957 6 p. |
artikel |
28 |
Titanium nitride electrodes for micro-gap discharge
|
Hsieh, Chung-Fon |
|
2006 |
37 |
9 |
p. 867-870 4 p. |
artikel |
29 |
Transport through a quantum-dot-ring with one dot connected to two electron reservoirs
|
Li, Hua |
|
2006 |
37 |
9 |
p. 958-962 5 p. |
artikel |