nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A New Emitter Switched Thyristor (EST) employing Trench Segmented p-base
|
Ji, In-Hwan |
|
2006 |
37 |
3 |
p. 231-235 5 p. |
artikel |
2 |
A vertical monolithical MOS thyristor bi-directional device
|
Bourennane, A. |
|
2006 |
37 |
3 |
p. 223-230 8 p. |
artikel |
3 |
Compensation and doping effects in heavily helium-radiated silicon for power device applications
|
Siemieniec, R. |
|
2006 |
37 |
3 |
p. 204-212 9 p. |
artikel |
4 |
Conditions of temperature and time instability occurrence of reverse-biased semiconductor power devices
|
Kojecký, B. |
|
2006 |
37 |
3 |
p. 269-274 6 p. |
artikel |
5 |
Design concept for wire-bonding reliability improvement by optimizing position in power devices
|
Ishiko, Masayasu |
|
2006 |
37 |
3 |
p. 262-268 7 p. |
artikel |
6 |
Evolution of a CMOS Based Lateral High Voltage Technology Concept
|
Knaipp, M. |
|
2006 |
37 |
3 |
p. 243-248 6 p. |
artikel |
7 |
Fast soft recovery thyristors with axial lifetime profile fabricated using iridium diffusion
|
Černík, M. |
|
2006 |
37 |
3 |
p. 213-216 4 p. |
artikel |
8 |
Integrated IGBT short-circuit protection structure: Design and optimization
|
Caramel, C. |
|
2006 |
37 |
3 |
p. 249-256 8 p. |
artikel |
9 |
Large area recrystallization of thick polysilicon films for low cost partial SOI power devices
|
Bertrand, I. |
|
2006 |
37 |
3 |
p. 257-261 5 p. |
artikel |
10 |
Lifetime control in silicon power P-i-N diode by ion irradiation: Suppression of undesired leakage
|
Hazdra, P. |
|
2006 |
37 |
3 |
p. 197-203 7 p. |
artikel |
11 |
OCVD carrier lifetime in P+NN+ diode structures with axial carrier lifetime gradient
|
Benda, V. |
|
2006 |
37 |
3 |
p. 217-222 6 p. |
artikel |
12 |
Physics-based mixed-mode reverse recovery modeling and optimization of Si PiN and MPS fast recovery diodes
|
Cappelluti, F. |
|
2006 |
37 |
3 |
p. 190-196 7 p. |
artikel |
13 |
The properties of aluminum, platinum silicide and copper based contacts for silicon high-power devices
|
Vobecký, J. |
|
2006 |
37 |
3 |
p. 236-242 7 p. |
artikel |
14 |
The quest for optimum construction and technology of power semiconductor devices
|
Benda, Vitezslav |
|
2006 |
37 |
3 |
p. 189- 1 p. |
artikel |