nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A new semi-flat architecture for high speed and reduced area CORDIC chip
|
Kebbati, H.S. |
|
2006 |
37 |
2 |
p. 181-187 7 p. |
artikel |
2 |
Cryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications
|
Pavanello, Marcelo Antonio |
|
2006 |
37 |
2 |
p. 137-144 8 p. |
artikel |
3 |
Design and simulation of a nanoelectronic single-electron Control—Not gate
|
Zardalidis, George T. |
|
2006 |
37 |
2 |
p. 94-97 4 p. |
artikel |
4 |
Effect of a magnetic field on the conduction mechanism in Silicon P+N junctions
|
Idrissi-Benzohra, M. |
|
2006 |
37 |
2 |
p. 127-132 6 p. |
artikel |
5 |
Improvement of the field emission characteristics of an oxidized porous polysilicon using annealed Pt/Ti surface emitter electrode
|
Bae, Seong-Chan |
|
2006 |
37 |
2 |
p. 167-173 7 p. |
artikel |
6 |
In depth study of the compensation in annealed heavily carbon doped GaAs
|
Rebey, A. |
|
2006 |
37 |
2 |
p. 158-166 9 p. |
artikel |
7 |
Investigation of ultrasonic vibrations of wire-bonding capillaries
|
Zhong, Z.W. |
|
2006 |
37 |
2 |
p. 107-113 7 p. |
artikel |
8 |
Mass patterning of polysiloxane layers using spin coating and photolithography techniques
|
Torbiéro, B. |
|
2006 |
37 |
2 |
p. 133-136 4 p. |
artikel |
9 |
Metastability tests of flip–flops in programmable digital circuits
|
Kalisz, J. |
|
2006 |
37 |
2 |
p. 174-180 7 p. |
artikel |
10 |
Modeling growth rate of HfO2 thin films grown by metal–organic molecular beam epitaxy
|
Kim, Myoung-Seok |
|
2006 |
37 |
2 |
p. 98-106 9 p. |
artikel |
11 |
NIL—a low-cost and high-throughput MEMS fabrication method compatible with IC manufacturing technology
|
Fan, Xiqiu |
|
2006 |
37 |
2 |
p. 121-126 6 p. |
artikel |
12 |
Numerical study on performance of pyramidal and conical isotropic etched single emitters
|
Mologni, J.F. |
|
2006 |
37 |
2 |
p. 152-157 6 p. |
artikel |
13 |
Temperature dependence of Si–GaAs energy gap using photoconductivity spectra
|
Zardas, G.E. |
|
2006 |
37 |
2 |
p. 91-93 3 p. |
artikel |
14 |
Thermal characterisation of power devices during transient operation
|
Castellazzi, Alberto |
|
2006 |
37 |
2 |
p. 145-151 7 p. |
artikel |
15 |
Tunnel charge transport within silicon in reversely-biased MOS tunnel structures
|
Vexler, M.I. |
|
2006 |
37 |
2 |
p. 114-120 7 p. |
artikel |