| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new rule-based clustering technique for defect analysis
|
Shankar, N.G.
|
|
2005
|
36 |
8 |
p. 718-724
7 p.
|
artikel
|
| 2 |
An integrated up-converter circuit in 0.8μm SiGe technology for TV applications
|
Hernández, E.
|
|
2005
|
36 |
8 |
p. 763-769
7 p.
|
artikel
|
| 3 |
A structure oriented compact thermal model for multiple heat source ASICs
|
Augustin, Adam
|
|
2005
|
36 |
8 |
p. 700-704
5 p.
|
artikel
|
| 4 |
Enhancement of adhesion strength of Cu layer with low dielectric constant SiC:H liners in Cu interconnects
|
Wang, Grace
|
|
2005
|
36 |
8 |
p. 749-753
5 p.
|
artikel
|
| 5 |
Fabrication and characterisation of high quality ZnO thin films by reactive electron beam evaporation technique
|
Al Asmar, R.
|
|
2005
|
36 |
8 |
p. 694-699
6 p.
|
artikel
|
| 6 |
Fabrication and performance of novel RF spiral inductors on silicon
|
Wang, Xi-Ning
|
|
2005
|
36 |
8 |
p. 737-740
4 p.
|
artikel
|
| 7 |
Feedback supported isolation structure for blocking of minority leakage carriers in power integrated circuits
|
Starke, T.K.H.
|
|
2005
|
36 |
8 |
p. 729-731
3 p.
|
artikel
|
| 8 |
Influence of transient flow and solder bump resistance on underfill process
|
Wan, J.W.
|
|
2005
|
36 |
8 |
p. 687-693
7 p.
|
artikel
|
| 9 |
Investigation of electromagnetic radiation induced by conducting wire of nanometer multi-quantum well device on InGaN LED
|
Tsai, Han-Chang
|
|
2005
|
36 |
8 |
p. 712-717
6 p.
|
artikel
|
| 10 |
Low-cost test technique using a new RF BIST circuit for 4.5–5.5GHz low noise amplifiers
|
Ryu, Jee-Youl
|
|
2005
|
36 |
8 |
p. 770-777
8 p.
|
artikel
|
| 11 |
Polarisability of a confined multisubband electron gas with exchange and correlation interactions
|
Rodríguez-Coppola, H.
|
|
2005
|
36 |
8 |
p. 778-785
8 p.
|
artikel
|
| 12 |
SET-based nano-circuit simulation and design method using HSPICE
|
Zhang, Fengming
|
|
2005
|
36 |
8 |
p. 741-748
8 p.
|
artikel
|
| 13 |
Simulation on the effect of non-uniform strain from the passivation layer on AlGaN/GaN HEMT
|
Mastro, M.A.
|
|
2005
|
36 |
8 |
p. 705-711
7 p.
|
artikel
|
| 14 |
Switched-current (SI) integrators with reduced effect of transistor mismatches
|
Psychalinos, C.
|
|
2005
|
36 |
8 |
p. 754-762
9 p.
|
artikel
|
| 15 |
Temperature and bias investigation of self heating effect and threshold voltage shift in pHEMT's
|
Alvaro, M.
|
|
2005
|
36 |
8 |
p. 732-736
5 p.
|
artikel
|
| 16 |
The electronic structures and optical properties of BaTiO3 and SrTiO3 using first-principles calculations
|
Samantaray, C.B.
|
|
2005
|
36 |
8 |
p. 725-728
4 p.
|
artikel
|
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