nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
AlGaAs/GaAs heterojunction bipolar transistors for power applications: issues of thermal effect and reliability
|
Liou, J.J |
|
2001 |
32 |
5-6 |
p. 419-431 13 p. |
artikel |
2 |
A monolithic IGBT gate driver for intelligent power modules implemented in 0.8μm high voltage (50V) CMOS process
|
Park, J.M |
|
2001 |
32 |
5-6 |
p. 537-541 5 p. |
artikel |
3 |
Analytical modelling of electrical characteristics in γ-irradiated power VDMOS transistors
|
Manić, I |
|
2001 |
32 |
5-6 |
p. 485-490 6 p. |
artikel |
4 |
A new generation of power lateral and vertical floating islands MOS structures
|
Morancho, F |
|
2001 |
32 |
5-6 |
p. 509-516 8 p. |
artikel |
5 |
Design, tests and applications of 3.3kV asymmetrical thyristor
|
Chamund, D.J |
|
2001 |
32 |
5-6 |
p. 463-471 9 p. |
artikel |
6 |
High-power robust semiconductor electronics technologies in the new millennium
|
Shenai, K |
|
2001 |
32 |
5-6 |
p. 397-408 12 p. |
artikel |
7 |
Improving the dynamic avalanche breakdown of high voltage planar devices using semi-resistive field plates
|
Dragomirescu, D |
|
2001 |
32 |
5-6 |
p. 473-479 7 p. |
artikel |
8 |
Integration of power devices in advanced mixed signal analog BiCMOS technology
|
Efland, T.R |
|
2001 |
32 |
5-6 |
p. 409-418 10 p. |
artikel |
9 |
Local lifetime control by light ion irradiation: impact on blocking capability of power P–i–N diode
|
Hazdra, P |
|
2001 |
32 |
5-6 |
p. 449-456 8 p. |
artikel |
10 |
Monolithic integration of a high-performance clustered insulated gate bipolar transistor with low-voltage components to form a 3kV intelligent power chip
|
Sweet, M |
|
2001 |
32 |
5-6 |
p. 527-536 10 p. |
artikel |
11 |
New laser technology for wire bonding in power devices
|
Kostrubiec, F |
|
2001 |
32 |
5-6 |
p. 543-546 4 p. |
artikel |
12 |
Numerical analysis on the LDMOS with a double epi-layer and trench electrodes
|
Park, I.-Y |
|
2001 |
32 |
5-6 |
p. 497-502 6 p. |
artikel |
13 |
PatentsALERT
|
|
|
2001 |
32 |
5-6 |
p. 547-552 6 p. |
artikel |
14 |
Physically based compact device models for circuit modelling applications
|
Mawby, P.A. |
|
2001 |
32 |
5-6 |
p. 433-447 15 p. |
artikel |
15 |
Power superjunction devices: an analytic model for breakdown voltage
|
Strollo, A.G.M |
|
2001 |
32 |
5-6 |
p. 491-496 6 p. |
artikel |
16 |
Progress in power semiconductors
|
Charitat, Georges |
|
2001 |
32 |
5-6 |
p. 395- 1 p. |
artikel |
17 |
Radial confinement in lateral power devices
|
Krishnan, S |
|
2001 |
32 |
5-6 |
p. 481-484 4 p. |
artikel |
18 |
Self-protection functions in direct light-triggered high-power thyristors
|
Niedernostheide, F.-J |
|
2001 |
32 |
5-6 |
p. 457-461 5 p. |
artikel |
19 |
SiC power DIMOS with double implanted Al/B P-well
|
Godignon, P |
|
2001 |
32 |
5-6 |
p. 503-507 5 p. |
artikel |
20 |
Silicon-on-insulator power integrated circuits
|
Garner, D.M |
|
2001 |
32 |
5-6 |
p. 517-526 10 p. |
artikel |