nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Acoustic Signal Processing for Telecommunication
|
Saidane, A |
|
2001 |
32 |
2 |
p. 178- 1 p. |
artikel |
2 |
A design based on proven concepts of an SEU-immune CMOS configuration data cell for reprogrammable FPGAs
|
Rockett, L.R. |
|
2001 |
32 |
2 |
p. 99-111 13 p. |
artikel |
3 |
A finite element simulator for three-dimensional analysis of interconnect structures
|
Sabelka, R |
|
2001 |
32 |
2 |
p. 163-171 9 p. |
artikel |
4 |
A hardware mid-value select voter architecture
|
Stojcev, M.K. |
|
2001 |
32 |
2 |
p. 149-162 14 p. |
artikel |
5 |
An investigation into the mechanisms limiting the safe operating area of a LIGBT in DI and DELDI technologies
|
Hardikar, S |
|
2001 |
32 |
2 |
p. 121-126 6 p. |
artikel |
6 |
A single-electron XOR gate
|
Dasigenis, M.M |
|
2001 |
32 |
2 |
p. 117-119 3 p. |
artikel |
7 |
Copper — Fundamental Mechanisms for Microelectronic Applications
|
Saidane, A |
|
2001 |
32 |
2 |
p. 179- 1 p. |
artikel |
8 |
Development of screen-printed polymer thick film planner transformer using Mn–Zn ferrite as core material
|
Arshak, K.I. |
|
2001 |
32 |
2 |
p. 113-116 4 p. |
artikel |
9 |
Flicker noise modelling of small geometry LDD MOSFETs
|
Kalra, E. |
|
2001 |
32 |
2 |
p. 143-147 5 p. |
artikel |
10 |
Handbook of Semiconductor Manufacturing Technology
|
Henini, M |
|
2001 |
32 |
2 |
p. 180- 1 p. |
artikel |
11 |
Heavily silicon-doped GaN by MOVPE
|
Halidou, I |
|
2001 |
32 |
2 |
p. 137-142 6 p. |
artikel |
12 |
Modelling of vacuum-silicon solid microwave diodes and triodes based on P++–N and on tungsten cathodes
|
Koshevaya, S.V |
|
2001 |
32 |
2 |
p. 133-136 4 p. |
artikel |
13 |
The Blue Laser Diode: The Complete Story (2nd and extended edition)
|
Henini, M |
|
2001 |
32 |
2 |
p. 177- 1 p. |
artikel |
14 |
The influence of doping density on short channel effects immunity in deep sub-micron grooved-gate PMOSFETs
|
Ren, Hongxia |
|
2001 |
32 |
2 |
p. 127-132 6 p. |
artikel |
15 |
Vacuum-silicon solid microwave diodes and triodes based on P++–N and on tungsten cathodes
|
Koshevaya, S.V |
|
2001 |
32 |
2 |
p. 173-175 3 p. |
artikel |