nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A dual-gate shorted-anode silicon-on-insulator lateral insulated gate bipolar transistor with floating ohmic contact for suppressing snapback and fast switching characteristics
|
Oh, J.K |
|
1999 |
30 |
6 |
p. 577-581 5 p. |
artikel |
2 |
A lumped-charge model for gate turn-off thyristors suitable for circuit simulation
|
Iannuzzo, F |
|
1999 |
30 |
6 |
p. 543-550 8 p. |
artikel |
3 |
A new generation of fast-switching thyristors
|
Park, J.M |
|
1999 |
30 |
6 |
p. 535-541 7 p. |
artikel |
4 |
A new lateral power MOSFET for smart power ICs: the “LUDMOS concept”
|
Zitouni, M |
|
1999 |
30 |
6 |
p. 551-561 11 p. |
artikel |
5 |
A new self-firing MOS-thyristor device: optimization of the turn-off performance and experimental results
|
Breil, M. |
|
1999 |
30 |
6 |
p. 599-610 12 p. |
artikel |
6 |
Design considerations of the diode effective area with regard to the reverse recovery performance
|
Rahimo, M.T. |
|
1999 |
30 |
6 |
p. 499-503 5 p. |
artikel |
7 |
Double gate MOS-thyristor devices with and without forward bias safe operating area capability: the insulated base MOS-controlled thyristor and the dual MOS-gated thyristor
|
Flores, D |
|
1999 |
30 |
6 |
p. 591-597 7 p. |
artikel |
8 |
Experimental and simulation results on the switching behaviour of lateral insulated gate bipolar transistor structures
|
Vellvehı́, M. |
|
1999 |
30 |
6 |
p. 583-589 7 p. |
artikel |
9 |
Fast power rectifier design using local lifetime and emitter efficiency control techniques
|
Napoli, Ettore |
|
1999 |
30 |
6 |
p. 505-512 8 p. |
artikel |
10 |
Open circuit voltage decay lifetime of ion irradiated devices
|
Vobecký, J. |
|
1999 |
30 |
6 |
p. 513-520 8 p. |
artikel |
11 |
Patent report
|
|
|
1999 |
30 |
6 |
p. 611-623 13 p. |
artikel |
12 |
Rare earth doped high barrier height Schottky devices
|
Chang, L.B |
|
1999 |
30 |
6 |
p. 521-526 6 p. |
artikel |
13 |
The numerical modelling of silicon carbide high power semiconductor devices
|
Elford, A. |
|
1999 |
30 |
6 |
p. 527-534 8 p. |
artikel |
14 |
The quest for the perfect switch
|
Benda, Viteszlav |
|
1999 |
30 |
6 |
p. 497-498 2 p. |
artikel |
15 |
The separated shorted-anode insulated gate bipolar transistor with the suppressed negative differential resistance regime
|
Byeon, D.S |
|
1999 |
30 |
6 |
p. 571-575 5 p. |
artikel |
16 |
Turn-off losses estimation for charge injection controlled non-punch through IGBTs
|
Lefebvre, S |
|
1999 |
30 |
6 |
p. 563-569 7 p. |
artikel |