no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
A bidirectional vector associative memory architecture with application to neural networks
|
Zhang, C.N. |
|
|
27 |
8 |
p. 713-722 |
article |
2 |
Berger check prediction for concurrent error detection in the Braun array multiplier
|
Jones, C.M. |
|
|
27 |
8 |
p. 745-755 |
article |
3 |
CMOS NAND and NOR Schmitt circuits
|
Dokić, Branko L. |
|
|
27 |
8 |
p. 757-765 |
article |
4 |
Eastern Europe in the global microelectronics world
|
Penn, Malcolm |
|
|
27 |
8 |
p. 767-775 |
article |
5 |
Generating, capturing and processing supply current signatures from analogue macros in mixed-signal ASICs
|
Binns, R.J. |
|
|
27 |
8 |
p. 723-729 |
article |
6 |
Hand book of sensors and actuators 1: Thick film sensors
|
Janković, N. |
|
|
27 |
8 |
p. 804-806 |
article |
7 |
Introduction to high-speed electronics and optoelectronics
|
Hurst, S.L. |
|
|
27 |
8 |
p. 803 |
article |
8 |
List of contents and author index volume 27, 1996
|
|
|
|
27 |
8 |
p. III-VIII |
article |
9 |
Logic synthesis for field-programmable gate arrays
|
Hurst, S.L. |
|
|
27 |
8 |
p. 803-804 |
article |
10 |
Low power design for DSP: methodologies and techniques
|
Arslan, T. |
|
|
27 |
8 |
p. 731-744 |
article |
11 |
New evidence for velocity overshoot in a 200 nm pseudomorphic HEMT
|
Babiker, S. |
|
|
27 |
8 |
p. 785-793 |
article |
12 |
News and updates in device application, process and materials being applied in today's microelectronics industry
|
|
|
|
27 |
8 |
p. i-xxiv |
article |
13 |
Optical characterization of epitaxial semiconductor layers
|
Henini, M. |
|
|
27 |
8 |
p. 806-807 |
article |
14 |
Physical architecture of VLSI systems
|
Stamenković, Zoran |
|
|
27 |
8 |
p. 806 |
article |
15 |
Principles of plasma discharges and material processing
|
Keatch, Robert |
|
|
27 |
8 |
p. 804 |
article |
16 |
Scheduling and allocation in high-level synthesis using stochastic techniques
|
Sait, Sadiq M. |
|
|
27 |
8 |
p. 693-712 |
article |
17 |
Silicon MOSFETs on insulator with lithography-independent 100 nm channel length
|
Dudek, V. |
|
|
27 |
8 |
p. 795-802 |
article |
18 |
The state-of-the-art and future trends in DRAMs
|
Hwang, C.G. |
|
|
27 |
8 |
p. 777-783 |
article |