| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Characterization of time-dependent dielectric breakdown in intrinsic thin SiO2
|
Suehle, John S.
|
|
1996
|
27 |
7 |
p. 657-665
9 p.
|
artikel
|
| 2 |
Correlation of SiO2 lifetimes from constant and ramped voltage measurements
|
Martin, Andreas
|
|
1996
|
27 |
7 |
p. 633-645
13 p.
|
artikel
|
| 3 |
Dielectric breakdown I: A review of oxide breakdown
|
Verweij, J.F.
|
|
1996
|
27 |
7 |
p. 611-622
12 p.
|
artikel
|
| 4 |
Dielectric breakdown II: Related projects at the University of twente
|
Klootwijk, J.H.
|
|
1996
|
27 |
7 |
p. 623-632
10 p.
|
artikel
|
| 5 |
Effects of plasma induced charges on thin oxide of CMOS technologies
|
Reimbold, Gilles
|
|
1996
|
27 |
7 |
p. 599-609
11 p.
|
artikel
|
| 6 |
High quality 4 nm gate dielectrics prepared at low pressure in oxygen and nitrous oxide atmospheres
|
Bauer, A.J.
|
|
1996
|
27 |
7 |
p. 667-673
7 p.
|
artikel
|
| 7 |
News and updates in device application, process and materials being applied in today's microelectronics industry
|
|
|
1996
|
27 |
7 |
p. i-xxiii
nvt p.
|
artikel
|
| 8 |
Nitrogen incorporation during N20- and NO-oxidation of silicon at temperatures down to 600°C
|
Weidner, G.
|
|
1996
|
27 |
7 |
p. 647-656
10 p.
|
artikel
|
| 9 |
Sheet resistance and layout effects in accelerated tests for dielectric reliability evaluation
|
Pio, F.
|
|
1996
|
27 |
7 |
p. 675-685
11 p.
|
artikel
|
| 10 |
SHE injection as studied by three level charge pumping
|
Kivi, M.J.
|
|
1996
|
27 |
7 |
p. 687-691
5 p.
|
artikel
|
| 11 |
The 6th ESPRIT workshop on the characterisation and growth of thin dielectrics in microelectronics
|
O'Sullivan, Paula
|
|
1996
|
27 |
7 |
p. 597-598
2 p.
|
artikel
|
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