| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A data-base for IC mask making
|
|
|
1987
|
18 |
2 |
p. 61-
1 p.
|
artikel
|
| 2 |
Automated measurement system for the investigation of surface state distribution
|
|
|
1987
|
18 |
2 |
p. 61-
1 p.
|
artikel
|
| 3 |
Design of a high performance DIP-like pin array package for logic devices
|
|
|
1987
|
18 |
2 |
p. 61-
1 p.
|
artikel
|
| 4 |
Editorial
|
Butcher, John
|
|
1987
|
18 |
2 |
p. 3-4
2 p.
|
artikel
|
| 5 |
Electrical design of a high speed computer packaging system
|
|
|
1987
|
18 |
2 |
p. 60-61
2 p.
|
artikel
|
| 6 |
Electrical resistivity and surface profile due to Al/Si/Ti reaction kinetics on an oxidised silicon wafer
|
Singh, A.
|
|
1987
|
18 |
2 |
p. 15-19
5 p.
|
artikel
|
| 7 |
Electron-beam recrystallised polysilicon on silicon dioxide
|
|
|
1987
|
18 |
2 |
p. 61-
1 p.
|
artikel
|
| 8 |
Forthcoming events
|
|
|
1987
|
18 |
2 |
p. 63-
1 p.
|
artikel
|
| 9 |
Hole and electron mobilities in heavily doped silicon: comparison of theory and experiment
|
|
|
1987
|
18 |
2 |
p. 60-
1 p.
|
artikel
|
| 10 |
IC wafer fab economics and lithography equipment selection: the inextricable link
|
|
|
1987
|
18 |
2 |
p. 61-
1 p.
|
artikel
|
| 11 |
LIF investigations of the surface chemistry in the dry processing of semiconductor devices
|
Singh, O.N.
|
|
1987
|
18 |
2 |
p. 39-47
9 p.
|
artikel
|
| 12 |
Manifestations of deep levels point defects in GaAs
|
|
|
1987
|
18 |
2 |
p. 60-
1 p.
|
artikel
|
| 13 |
Modelling the DC characteristics of base-driven differential pairs
|
Abuelma'atti, M.T.
|
|
1987
|
18 |
2 |
p. 5-13
9 p.
|
artikel
|
| 14 |
[No title]
|
Harris, P.
|
|
1987
|
18 |
2 |
p. 62-
1 p.
|
artikel
|
| 15 |
[No title]
|
Chapple, Mike
|
|
1987
|
18 |
2 |
p. 62-
1 p.
|
artikel
|
| 16 |
Novel insensitive functional immittance conversion with voltage/current followers
|
Nandi, R.
|
|
1987
|
18 |
2 |
p. 35-38
4 p.
|
artikel
|
| 17 |
Parliamentary report
|
Roberts, Gwilym
|
|
1987
|
18 |
2 |
p. 57-59
3 p.
|
artikel
|
| 18 |
Real time sputter deposition monitoring using glow discharge mass spectroscopy
|
|
|
1987
|
18 |
2 |
p. 60-
1 p.
|
artikel
|
| 19 |
Research and Development
|
|
|
1987
|
18 |
2 |
p. 52-56
5 p.
|
artikel
|
| 20 |
SEM study of etching of GaAs substrates in the H3PO4:H2O2:H2O system
|
Sinha, M.P.
|
|
1987
|
18 |
2 |
p. 48-51
4 p.
|
artikel
|
| 21 |
Solid state two-wire to four-wire conversion
|
Bozic, S.M.
|
|
1987
|
18 |
2 |
p. 29-33
5 p.
|
artikel
|
| 22 |
UV radiation effects of argon plasma on Si−SiO2 structures
|
Kassabov, J.
|
|
1987
|
18 |
2 |
p. 21-27
7 p.
|
artikel
|
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