| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A high speed and low power CMOS/SOS multiplier-accumulator
|
Iwamura, Jun
|
|
1983
|
14 |
6 |
p. 49-57
9 p.
|
artikel
|
| 2 |
A low-leakage VLSI CMOS/SOS process with thin epi layers
|
Lee, J.Y.
|
|
1983
|
14 |
6 |
p. 5-12
8 p.
|
artikel
|
| 3 |
Analysis of leakage currents in CMOS/SOS devices
|
Vasudev, K.
|
|
1983
|
14 |
6 |
p. 45-48
4 p.
|
artikel
|
| 4 |
A new method of SOS epitaxial growth with amorphous Si buffer layer
|
Ishida, M.
|
|
1983
|
14 |
6 |
p. 114-115
2 p.
|
artikel
|
| 5 |
An experimental and theoretical study of polycrystalline thin film transistor
|
|
|
1983
|
14 |
6 |
p. 123-
1 p.
|
artikel
|
| 6 |
An ion milled coplanar SOS technology
|
Sharp, Alan C.
|
|
1983
|
14 |
6 |
p. 13-21
9 p.
|
artikel
|
| 7 |
Applications of infrared spectroscopy to the annealing of silicon
|
|
|
1983
|
14 |
6 |
p. 122-
1 p.
|
artikel
|
| 8 |
A thick film hybrid IC amplifier for industrial use
|
|
|
1983
|
14 |
6 |
p. 123-
1 p.
|
artikel
|
| 9 |
A two level metal, software compatible, CMOS/SOS gate array family
|
Friedman, Eby
|
|
1983
|
14 |
6 |
p. 117-118
2 p.
|
artikel
|
| 10 |
Beam-recrystallised silicon-on-insulator films: can devices lives with grain boundaries?
|
Colinge, Jean-Pierre
|
|
1983
|
14 |
6 |
p. 58-65
8 p.
|
artikel
|
| 11 |
Building quality analog circuits with C-MOS logic arrays
|
|
|
1983
|
14 |
6 |
p. 124-
1 p.
|
artikel
|
| 12 |
Can ATE be trusted by QC?
|
|
|
1983
|
14 |
6 |
p. 123-
1 p.
|
artikel
|
| 13 |
Characteristics of micro-groove zone-melting recrystallised Si islands
|
Kugimiya, K.
|
|
1983
|
14 |
6 |
p. 111-114
4 p.
|
artikel
|
| 14 |
Characteristics of MOS FETs on double solid-phase epitaxial SOS
|
Yoshida, M.
|
|
1983
|
14 |
6 |
p. 116-117
2 p.
|
artikel
|
| 15 |
Chip resistors gain support
|
|
|
1983
|
14 |
6 |
p. 124-
1 p.
|
artikel
|
| 16 |
Chip trio simplifies precise position control
|
|
|
1983
|
14 |
6 |
p. 124-
1 p.
|
artikel
|
| 17 |
Duplicateur de masques a rayons X pour lithographie submicronique
|
|
|
1983
|
14 |
6 |
p. 122-
1 p.
|
artikel
|
| 18 |
Dynamic measurement of the water vapour content of integrated circuit packages using derivative infrared diode laser spectroscopy
|
|
|
1983
|
14 |
6 |
p. 123-
1 p.
|
artikel
|
| 19 |
Editorial
|
Butcher, John
|
|
1983
|
14 |
6 |
p. 3-
1 p.
|
artikel
|
| 20 |
Electrical characterisation of ion-implanted silicon-on-sapphire
|
Lin, Alice L.
|
|
1983
|
14 |
6 |
p. 22-32
11 p.
|
artikel
|
| 21 |
Electron-beam recrystallised polysilicon on silicon dioxide
|
Inoue, Tomoyasu
|
|
1983
|
14 |
6 |
p. 74-81
8 p.
|
artikel
|
| 22 |
Fabrication of large-area thick film hybrid circuits on RCA porcelain-coated steel substrates
|
|
|
1983
|
14 |
6 |
p. 121-
1 p.
|
artikel
|
| 23 |
Functional laser trimming of automotive electronics
|
|
|
1983
|
14 |
6 |
p. 121-
1 p.
|
artikel
|
| 24 |
Gallium arsenide digital integrated circuits for applications above one gigahertz
|
|
|
1983
|
14 |
6 |
p. 124-
1 p.
|
artikel
|
| 25 |
Gettering processes for defect control
|
|
|
1983
|
14 |
6 |
p. 122-
1 p.
|
artikel
|
| 26 |
Hybrid lithography
|
|
|
1983
|
14 |
6 |
p. 121-
1 p.
|
artikel
|
| 27 |
IEEE SOS/SOI Technology Workshop
|
|
|
1983
|
14 |
6 |
p. 108-110
3 p.
|
artikel
|
| 28 |
Influence of light on NMOS transistors in laser μ-zone crystallised silicon layers
|
Bösch, M.A.
|
|
1983
|
14 |
6 |
p. 82-87
6 p.
|
artikel
|
| 29 |
Large scale integration techniques for telecommunication
|
|
|
1983
|
14 |
6 |
p. 124-
1 p.
|
artikel
|
| 30 |
Lift-off techniques for fine line metal patterning
|
|
|
1983
|
14 |
6 |
p. 122-
1 p.
|
artikel
|
| 31 |
Measurement procedure for evaluating the equivalent circuit elements of bond wires in microwave integrated circuits
|
|
|
1983
|
14 |
6 |
p. 122-
1 p.
|
artikel
|
| 32 |
Methods of synthesising active filters with hybrid integrated circuits of the TESLA WQU011 type
|
|
|
1983
|
14 |
6 |
p. 121-
1 p.
|
artikel
|
| 33 |
New mounting technologies in the manufacture of hybrid circuits
|
|
|
1983
|
14 |
6 |
p. 122-
1 p.
|
artikel
|
| 34 |
Optimisation of RCA porcelain for compatibility with thick films
|
|
|
1983
|
14 |
6 |
p. 122-
1 p.
|
artikel
|
| 35 |
Polymer materials for electronic applications
|
Pitt, Keith
|
|
1983
|
14 |
6 |
p. 119-120
2 p.
|
artikel
|
| 36 |
Process conditions affecting hot electron trapping in DC magnetron sputtered MOS devices
|
|
|
1983
|
14 |
6 |
p. 123-
1 p.
|
artikel
|
| 37 |
Radiation-hard CMOS/SOS: An ideal technology for the space environment
|
Veloric, H.
|
|
1983
|
14 |
6 |
p. 117-
1 p.
|
artikel
|
| 38 |
Reliability considerations of flip chip components for automotive electronic applications
|
|
|
1983
|
14 |
6 |
p. 124-
1 p.
|
artikel
|
| 39 |
Silicon film recrystallisation using e-beam line source
|
Rensch, D.B.
|
|
1983
|
14 |
6 |
p. 66-73
8 p.
|
artikel
|
| 40 |
Silicon-on-insulator structures using high dose oxygen implantation to form buried oxide films
|
Das, K.
|
|
1983
|
14 |
6 |
p. 88-107
20 p.
|
artikel
|
| 41 |
Tester takes on VLSI with 264-K vectors behind its pins
|
|
|
1983
|
14 |
6 |
p. 124-
1 p.
|
artikel
|
| 42 |
The design and performance of near micron SOS MOSFETs
|
Maddox III, R.L.
|
|
1983
|
14 |
6 |
p. 33-44
12 p.
|
artikel
|
| 43 |
The physics and chemistry of liquid crystal devices
|
Pitt, Keith
|
|
1983
|
14 |
6 |
p. 119-
1 p.
|
artikel
|
| 44 |
The use of 16-bit high level languages and microcomputer products to solve industrial control products
|
|
|
1983
|
14 |
6 |
p. 124-
1 p.
|
artikel
|
| 45 |
Thick film circuits for telecommunications equipment
|
|
|
1983
|
14 |
6 |
p. 121-
1 p.
|
artikel
|
| 46 |
Thick film temperature compensating circuit for semiconductor strain gauges
|
|
|
1983
|
14 |
6 |
p. 124-
1 p.
|
artikel
|
| 47 |
Thin film technology used in bell system telecommunication circuits
|
|
|
1983
|
14 |
6 |
p. 122-
1 p.
|
artikel
|
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