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                             37 results found
no title author magazine year volume issue page(s) type
1 Accurate single section model of charge coupled devices for computer aided design Kumar, U.
1983
14 4 p. 51-56
6 p.
article
2 A ‘low-risk’ design approach to silicon integrated circuits Prazic, B.D.
1983
14 4 p. 11-19
9 p.
article
3 A moisture protection screening test for hybrid circuit encapsulants 1983
14 4 p. 62-63
2 p.
article
4 Anomalous thermoelastic effect in silicon 1983
14 4 p. 64-
1 p.
article
5 A simple NMOS constant voltage and current source Haskard, M.R.
1983
14 4 p. 31-37
7 p.
article
6 Breakdown voltage of discrete capacitors under single-pulse conditions 1983
14 4 p. 63-
1 p.
article
7 CF4/O2 plasma accelerated aluminium metallisation corrosion in plastic encapsulated ICs in the presence of contaminated die attach epoxies 1983
14 4 p. 64-
1 p.
article
8 C-MOS inspires the best chips yet for computer, consumer and communication applications 1983
14 4 p. 61-
1 p.
article
9 C-MOS PROM density hits 16-K 1983
14 4 p. 62-
1 p.
article
10 Combination of thick film dielectric/thin film conductor for fine pattern formation of multi-layer substrate 1983
14 4 p. 63-
1 p.
article
11 Considerations in formulation and manufacturing of thick film inks 1983
14 4 p. 64-
1 p.
article
12 Devices and circuits for bipolar (V) LSI 1983
14 4 p. 61-
1 p.
article
13 Editorial Butcher, John
1983
14 4 p. 3-
1 p.
article
14 Electroless nickel resistors formed on IMST substrate 1983
14 4 p. 62-
1 p.
article
15 Experimental study of two-terminal distributed parameter impedance networks Ahmad, S.
1983
14 4 p. 45-49
5 p.
article
16 Failure mechanisms that cause high electrical leakage in multilayer ceramic capacitors 1983
14 4 p. 63-
1 p.
article
17 Gallium arsenide integrated circuits technologies 1983
14 4 p. 61-
1 p.
article
18 Gate-voltage limitations for thin channel MIS and Schottky buried-channel charge-coupled devices 1983
14 4 p. 63-64
2 p.
article
19 Gold conductor pastes for high density circuit 1983
14 4 p. 64-
1 p.
article
20 High frequency magnetic bubble devices 1983
14 4 p. 62-
1 p.
article
21 Latent B-radiation damage in hermetically sealed NMOS devices 1983
14 4 p. 64-
1 p.
article
22 Magnetic bubble propagation for the dual conductor current-access test circuit 1983
14 4 p. 61-
1 p.
article
23 Modified CMOS inverters Dokić, Branko
1983
14 4 p. 39-44
6 p.
article
24 Multi-MOS structure speeds layout of VLSI chips 1983
14 4 p. 61-
1 p.
article
25 [No title] Krejcik, M.
1983
14 4 p. 59-
1 p.
article
26 [No title] Krejcik, M.
1983
14 4 p. 60-
1 p.
article
27 [No title] Krejcik, M.
1983
14 4 p. 59-
1 p.
article
28 [No title] Stoddart, R.
1983
14 4 p. 60-
1 p.
article
29 Preparation and some magnetic properties of amorphous rare earth-transition metal films with perpendicular anistropy for bubble memories 1983
14 4 p. 62-
1 p.
article
30 Preparation and some magnetic properties of amorphous rare earth-transition metal films with perpendicular anistropy for bubble memory 1983
14 4 p. 62-
1 p.
article
31 Review of ion-implanted bubble devices 1983
14 4 p. 61-
1 p.
article
32 Single-chip 1200 bits/sec modem filters Gregorian, R.
1983
14 4 p. 21-29
9 p.
article
33 The reflow attachment and reliability testing of ceramic chip carriers 1983
14 4 p. 63-
1 p.
article
34 The use of silicone RTV rubber for alpha particle protection on silicon integrated circuits 1983
14 4 p. 64-
1 p.
article
35 Thick film circuits: present state and future development 1983
14 4 p. 62-
1 p.
article
36 Thick-film laser trimming principles, techniques and recommendations 1983
14 4 p. 63-
1 p.
article
37 Trends in gate array technology Hardage, C.
1983
14 4 p. 5-10
6 p.
article
                             37 results found
 
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