| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A device analysis system based on laser scanning techniques
|
|
|
1983
|
14 |
3 |
p. 92-
1 p.
|
artikel
|
| 2 |
Analyser tests bare and loaded boards
|
|
|
1983
|
14 |
3 |
p. 92-
1 p.
|
artikel
|
| 3 |
A new dielectric isolation method using porous silicon
|
|
|
1983
|
14 |
3 |
p. 91-
1 p.
|
artikel
|
| 4 |
Architectural considerations for an uncommitted circuit intended for combined digital and analogue functions
|
Kemp, A.J.
|
|
1983
|
14 |
3 |
p. 21-30
10 p.
|
artikel
|
| 5 |
Change of the electron effective mass in extremely heavily doped n-type Si obtained by ion implantation and laser annealing
|
|
|
1983
|
14 |
3 |
p. 91-
1 p.
|
artikel
|
| 6 |
Developments in products, technology and design tools
|
Chan, S.
|
|
1983
|
14 |
3 |
p. 53-59
7 p.
|
artikel
|
| 7 |
Editorial
|
Butcher, John
|
|
1983
|
14 |
3 |
p. 3-
1 p.
|
artikel
|
| 8 |
Epitaxial layer blocks unwanted charge in MOS RAMs
|
|
|
1983
|
14 |
3 |
p. 91-
1 p.
|
artikel
|
| 9 |
GaAs semi-insulating materials: key parameters and characterisation methods
|
|
|
1983
|
14 |
3 |
p. 90-
1 p.
|
artikel
|
| 10 |
High speed CMOS gate arrays
|
Dantec, A.
|
|
1983
|
14 |
3 |
p. 41-52
12 p.
|
artikel
|
| 11 |
Hot-wall CVD Tungsten for VLSI
|
|
|
1983
|
14 |
3 |
p. 89-
1 p.
|
artikel
|
| 12 |
Individual wafer metallisation utilising load-locked, close-coupled conical magnetron sputtering
|
|
|
1983
|
14 |
3 |
p. 91-
1 p.
|
artikel
|
| 13 |
Innovations which reduce costs and turn-around time of integrated circuit production for small electronic engineering companies
|
|
|
1983
|
14 |
3 |
p. 91-
1 p.
|
artikel
|
| 14 |
Lasers automate pc-board inspection
|
|
|
1983
|
14 |
3 |
p. 92-
1 p.
|
artikel
|
| 15 |
Low frequency excess noise in SOS MOS FETs
|
|
|
1983
|
14 |
3 |
p. 89-
1 p.
|
artikel
|
| 16 |
Monolithic microwave circuits
|
|
|
1983
|
14 |
3 |
p. 89-
1 p.
|
artikel
|
| 17 |
Ni-P as a new material for thick-film technology
|
|
|
1983
|
14 |
3 |
p. 90-
1 p.
|
artikel
|
| 18 |
[No title]
|
McClelland, S.
|
|
1983
|
14 |
3 |
p. 87-
1 p.
|
artikel
|
| 19 |
[No title]
|
Rathkey, P.W.K.
|
|
1983
|
14 |
3 |
p. 88-
1 p.
|
artikel
|
| 20 |
[No title]
|
Walker, P.A.
|
|
1983
|
14 |
3 |
p. 87-88
2 p.
|
artikel
|
| 21 |
On anomalous drift mobility results in a-silicon alloys
|
|
|
1983
|
14 |
3 |
p. 90-
1 p.
|
artikel
|
| 22 |
Oxidised porous silicon isolates better than sapphire
|
|
|
1983
|
14 |
3 |
p. 90-
1 p.
|
artikel
|
| 23 |
Personality modules' firmware controls VLSI circuit tester
|
|
|
1983
|
14 |
3 |
p. 92-
1 p.
|
artikel
|
| 24 |
Polymer-monomer conversion in anthracene thin-films as a switching and memory device
|
|
|
1983
|
14 |
3 |
p. 90-
1 p.
|
artikel
|
| 25 |
Post-characterisation of GaAs field-effect transistors and integrated circuits on test patterns
|
|
|
1983
|
14 |
3 |
p. 92-
1 p.
|
artikel
|
| 26 |
Progress in and technology of low-cost silver containing thick-film conductors
|
|
|
1983
|
14 |
3 |
p. 89-
1 p.
|
artikel
|
| 27 |
Raman spectra of Si-implanted silicon on sapphire
|
|
|
1983
|
14 |
3 |
p. 91-
1 p.
|
artikel
|
| 28 |
Safety in chemical vapour deposition
|
|
|
1983
|
14 |
3 |
p. 91-
1 p.
|
artikel
|
| 29 |
Scanning electron beam probes VLSI chips
|
|
|
1983
|
14 |
3 |
p. 92-
1 p.
|
artikel
|
| 30 |
Semiconductor industry silicon: physical and thermodynamic properties
|
|
|
1983
|
14 |
3 |
p. 89-
1 p.
|
artikel
|
| 31 |
Stress dependence of electron-hole liquied parameters in silicon
|
|
|
1983
|
14 |
3 |
p. 90-
1 p.
|
artikel
|
| 32 |
Test and reliability evaluation of microprocessors
|
|
|
1983
|
14 |
3 |
p. 92-
1 p.
|
artikel
|
| 33 |
Testing logic arrays
|
Walker, R.
|
|
1983
|
14 |
3 |
p. 31-39
9 p.
|
artikel
|
| 34 |
Test optimisation for static RAM memories
|
|
|
1983
|
14 |
3 |
p. 92-
1 p.
|
artikel
|
| 35 |
The diffusion of silicon in germanium
|
|
|
1983
|
14 |
3 |
p. 89-
1 p.
|
artikel
|
| 36 |
The future of custom MOS
|
Shenton, G.
|
|
1983
|
14 |
3 |
p. 13-19
7 p.
|
artikel
|
| 37 |
The use of bipolar semiconductor junctions in linear circuit design
|
Bray, Derek
|
|
1983
|
14 |
3 |
p. 61-86
26 p.
|
artikel
|
| 38 |
Transport equations for the analysis of heavily doped semiconductor devices
|
|
|
1983
|
14 |
3 |
p. 90-
1 p.
|
artikel
|
| 39 |
Trends in semi-custom integrated circuits — An overview
|
Pyne, A.
|
|
1983
|
14 |
3 |
p. 5-11
7 p.
|
artikel
|
| 40 |
Uniform aluminum deposits on large non-planar and planar polyimide substrates by physical vapour deposition
|
|
|
1983
|
14 |
3 |
p. 91-
1 p.
|
artikel
|
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