nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Accuracy and doping uniformity of ion implantation anent
|
|
|
1983 |
14 |
1 |
p. 80- 1 p. |
artikel |
2 |
A: contacts to Si-implanted InP
|
|
|
1983 |
14 |
1 |
p. 80- 1 p. |
artikel |
3 |
A: HAS seeks title of global CAD system
|
|
|
1983 |
14 |
1 |
p. 81- 1 p. |
artikel |
4 |
A model for the breakdown characteristics of p-channel 4OS transistor protection devices
|
|
|
1983 |
14 |
1 |
p. 79- 1 p. |
artikel |
5 |
A modular method for LSI circuits testing
|
|
|
1983 |
14 |
1 |
p. 80- 1 p. |
artikel |
6 |
An active-C resonator and its applications in realising monolithic filter and oscillator
|
Khan, I.A. |
|
1983 |
14 |
1 |
p. 61-66 6 p. |
artikel |
7 |
Analysis of the effect of mechanical stress on the effective mobility of charge carriers in inversion layers of P/MOS structures
|
|
|
1983 |
14 |
1 |
p. 79- 1 p. |
artikel |
8 |
An and carbon in Czochralski-grown silicon
|
|
|
1983 |
14 |
1 |
p. 80- 1 p. |
artikel |
9 |
An integrate FM receivet
|
|
|
1983 |
14 |
1 |
p. 81- 1 p. |
artikel |
10 |
A review of two dimensional long channel MOSFET modelling
|
|
|
1983 |
14 |
1 |
p. 77- 1 p. |
artikel |
11 |
Average conductivity of complementary-error and Gaussian doped layers in Gallium arsenide
|
|
|
1983 |
14 |
1 |
p. 77- 1 p. |
artikel |
12 |
Bipolar circuit design for a 5000-circuit VLSI gate array
|
|
|
1983 |
14 |
1 |
p. 81- 1 p. |
artikel |
13 |
Britain takes the lead on hybrid components
|
|
|
1983 |
14 |
1 |
p. 79- 1 p. |
artikel |
14 |
CAD station aims at VLSI design
|
|
|
1983 |
14 |
1 |
p. 81- 1 p. |
artikel |
15 |
Carrier mobility in laser-annealed silicon-on-sapphire films
|
|
|
1983 |
14 |
1 |
p. 77- 1 p. |
artikel |
16 |
Center for Solid-State Electronics research at Arizona State University
|
Akers, Lex A. |
|
1983 |
14 |
1 |
p. 67-68 2 p. |
artikel |
17 |
Chip set bestows virtual memory on 16-bit minis
|
|
|
1983 |
14 |
1 |
p. 81- 1 p. |
artikel |
18 |
CMOS comes of age
|
|
|
1983 |
14 |
1 |
p. 81- 1 p. |
artikel |
19 |
CMOS uncommitted logic arrays are part-digital, part-analog
|
|
|
1983 |
14 |
1 |
p. 81- 1 p. |
artikel |
20 |
Contribution to ion implantation through a narrow slit at higher energies
|
Lutsch, A.G.K. |
|
1983 |
14 |
1 |
p. 15-20 6 p. |
artikel |
21 |
Contribution to range statistics of Boron implanted into Silicon at high energies
|
|
|
1983 |
14 |
1 |
p. 80- 1 p. |
artikel |
22 |
Diffusion characteristics of antimony and phosphorus spin-on sources
|
Prasad, P.M. |
|
1983 |
14 |
1 |
p. 49-60 12 p. |
artikel |
23 |
Digital signal processing hits stride with 64-bit correlator C
|
|
|
1983 |
14 |
1 |
p. 81- 1 p. |
artikel |
24 |
Editorial
|
Butcher, John |
|
1983 |
14 |
1 |
p. 3- 1 p. |
artikel |
25 |
Editorial Board
|
|
|
1983 |
14 |
1 |
p. CO2- 1 p. |
artikel |
26 |
Electromigration and ohmic contact properties of the magnetron-sputtered Al-2%Si alloy films
|
|
|
1983 |
14 |
1 |
p. 78- 1 p. |
artikel |
27 |
Field-effect transistor automatic microwave characterisation
|
|
|
1983 |
14 |
1 |
p. 77-78 2 p. |
artikel |
28 |
Field-effect transistor microwave characterisation: noise figure, gain, power measurements on microwave bench
|
|
|
1983 |
14 |
1 |
p. 77- 1 p. |
artikel |
29 |
GaAs epitaxial growth for field effect transistors
|
|
|
1983 |
14 |
1 |
p. 79-80 2 p. |
artikel |
30 |
Germanium selenide as a negative inorganic resist for ion beam microfabrication
|
Balasubramanyam, K. |
|
1983 |
14 |
1 |
p. 35-42 8 p. |
artikel |
31 |
Implantation through a window with medium to high energy ions
|
Lutsch, A.G. |
|
1983 |
14 |
1 |
p. 21-34 14 p. |
artikel |
32 |
Interpretation of non-equilibium measurements on MOS devices using the linear voltage ramp technique
|
|
|
1983 |
14 |
1 |
p. 78- 1 p. |
artikel |
33 |
Ion range statistics by a fourier series
|
Lutsch, A.G.K. |
|
1983 |
14 |
1 |
p. 5-13 9 p. |
artikel |
34 |
Localised anodic thinning of GaAs structures
|
|
|
1983 |
14 |
1 |
p. 77- 1 p. |
artikel |
35 |
Membrane touch switches: thick-film material systems and processing options
|
|
|
1983 |
14 |
1 |
p. 79- 1 p. |
artikel |
36 |
Metal thick-film conductors
|
|
|
1983 |
14 |
1 |
p. 80- 1 p. |
artikel |
37 |
Microelectronics in China 1979–82 — A review
|
McClelland, S. |
|
1983 |
14 |
1 |
p. 69-71 3 p. |
artikel |
38 |
Microelectronic test structures for characterising fine-line lithography
|
|
|
1983 |
14 |
1 |
p. 78- 1 p. |
artikel |
39 |
Microprocessors and the M. D. A new breed of smart medical equipment can diagnose, analyse, and rehabilitate
|
|
|
1983 |
14 |
1 |
p. 81- 1 p. |
artikel |
40 |
Minimising the parts count of multichannel data systems
|
|
|
1983 |
14 |
1 |
p. 81- 1 p. |
artikel |
41 |
MOS devices - Design and manufacture
|
Butcher, John |
|
1983 |
14 |
1 |
p. 73- 1 p. |
artikel |
42 |
Multifiunction chip plays many parts in analog design
|
|
|
1983 |
14 |
1 |
p. 81- 1 p. |
artikel |
43 |
Multi-scan electron beam sintering of Al−Si OHMIC contacts
|
|
|
1983 |
14 |
1 |
p. 80- 1 p. |
artikel |
44 |
New process boosts current levels of monolithic voltage regulator
|
|
|
1983 |
14 |
1 |
p. 81- 1 p. |
artikel |
45 |
[No title]
|
Randhawa, G. |
|
1983 |
14 |
1 |
p. 73-74 2 p. |
artikel |
46 |
On the correlation of “hot” and “cold” electron-hole drop densities in uniaxially stressed silicon
|
|
|
1983 |
14 |
1 |
p. 79- 1 p. |
artikel |
47 |
Passivation of gallium arsenide by reactively sputtered gallium nitride thin films
|
Bhattacharyya, A.B. |
|
1983 |
14 |
1 |
p. 43-48 6 p. |
artikel |
48 |
Performance of digital integrated circuit technologies at very high temperatures
|
|
|
1983 |
14 |
1 |
p. 78- 1 p. |
artikel |
49 |
Planar double-heterostructure GaAlAs LED's packaged for fiber optics
|
|
|
1983 |
14 |
1 |
p. 78- 1 p. |
artikel |
50 |
Silicon temperature sensors require little compensation
|
|
|
1983 |
14 |
1 |
p. 81- 1 p. |
artikel |
51 |
Stress-sensitive properties of silicon-gate MOS devices
|
|
|
1983 |
14 |
1 |
p. 79- 1 p. |
artikel |
52 |
System performs complete SLIC tests
|
|
|
1983 |
14 |
1 |
p. 80- 1 p. |
artikel |
53 |
The impact of microelectronics technology
|
Butcher, John |
|
1983 |
14 |
1 |
p. 74- 1 p. |
artikel |
54 |
Tracking performance of film resistors: definitions and theory
|
|
|
1983 |
14 |
1 |
p. 78- 1 p. |
artikel |
55 |
V-channel process increases speed and density of MNOS EE-PROMs
|
|
|
1983 |
14 |
1 |
p. 81- 1 p. |
artikel |
56 |
Your fortune in the microcomputer business
|
Krejcik, Milos |
|
1983 |
14 |
1 |
p. 75- 1 p. |
artikel |