nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A bibliography on silicon nitride films
|
|
|
1982 |
13 |
6 |
p. 41- 1 p. |
artikel |
2 |
A 2400-bit/s microprocessor-based modem
|
|
|
1982 |
13 |
6 |
p. 40- 1 p. |
artikel |
3 |
A CMOS process for VLSI instrumentation
|
Yi, Tong Qin |
|
1982 |
13 |
6 |
p. 29-32 4 p. |
artikel |
4 |
A computer-aided design system for hybrid circuits
|
|
|
1982 |
13 |
6 |
p. 40- 1 p. |
artikel |
5 |
A low-leakage-current CdSe thin-film transistor
|
|
|
1982 |
13 |
6 |
p. 41- 1 p. |
artikel |
6 |
A new EPR centre due to dislocations in phosphorous doped silicon
|
|
|
1982 |
13 |
6 |
p. 42- 1 p. |
artikel |
7 |
A notation for designing restoring logic circuitry in CMOS
|
Rem, Martin |
|
1982 |
13 |
6 |
p. 5-10 6 p. |
artikel |
8 |
A novel approach for higher yield in thick-film resistors
|
|
|
1982 |
13 |
6 |
p. 42- 1 p. |
artikel |
9 |
A physical interpretation of dispersive transport in disordered semiconductors
|
|
|
1982 |
13 |
6 |
p. 42- 1 p. |
artikel |
10 |
Calculation of the self-induced field profile produced by steady-state distribution of signal carriers in charge-coupled device
|
|
|
1982 |
13 |
6 |
p. 41- 1 p. |
artikel |
11 |
Can velocity overshoot or ballistic transport be efficient in submicron devices?
|
Institut d'Electronique Fondamentale, |
|
1982 |
13 |
6 |
p. 18-22 5 p. |
artikel |
12 |
Classified index to articles — Vols. 12 & 13 inclusive
|
|
|
1982 |
13 |
6 |
p. 43-44 2 p. |
artikel |
13 |
CMOS a-d converter interfaces easily with many microprocessors
|
|
|
1982 |
13 |
6 |
p. 39- 1 p. |
artikel |
14 |
Control chip and driver program unlock magnetic-bubble potential
|
|
|
1982 |
13 |
6 |
p. 39-40 2 p. |
artikel |
15 |
Creating the integrated engineering design office
|
Jones, Harvey |
|
1982 |
13 |
6 |
p. 15-17 3 p. |
artikel |
16 |
3-d MOSFETs shrink statie RAM cells and analog circuit blocks
|
|
|
1982 |
13 |
6 |
p. 39- 1 p. |
artikel |
17 |
E-beam machines paired with optics pare wafer costs
|
|
|
1982 |
13 |
6 |
p. 42- 1 p. |
artikel |
18 |
Editorial
|
Butcher, John |
|
1982 |
13 |
6 |
p. 3-4 2 p. |
artikel |
19 |
Effect of device reliability on memory reliability
|
|
|
1982 |
13 |
6 |
p. 40- 1 p. |
artikel |
20 |
Electron beam finds memory faults, reconfigures chips
|
|
|
1982 |
13 |
6 |
p. 42- 1 p. |
artikel |
21 |
ESR studies of thermally oxidised silicon wafers
|
|
|
1982 |
13 |
6 |
p. 42- 1 p. |
artikel |
22 |
Evaluation of CMOS transistor related design rules
|
|
|
1982 |
13 |
6 |
p. 39- 1 p. |
artikel |
23 |
Evaluation of inhomogeneous resistive layers by a four point method
|
|
|
1982 |
13 |
6 |
p. 42- 1 p. |
artikel |
24 |
Face-down TAB for hybrids
|
|
|
1982 |
13 |
6 |
p. 40- 1 p. |
artikel |
25 |
Fast on-chip memory extends 16-bit family's reach
|
|
|
1982 |
13 |
6 |
p. 39- 1 p. |
artikel |
26 |
Field enhanced carrier generation in MOS-capacitors containing defects
|
|
|
1982 |
13 |
6 |
p. 41- 1 p. |
artikel |
27 |
Functional and in-circuit testing team up to tackle VLSI in the '80s
|
|
|
1982 |
13 |
6 |
p. 42- 1 p. |
artikel |
28 |
Growth and characterisation of large diameter undoped semi-insulating GaAs for direct ion implanted FET technology
|
|
|
1982 |
13 |
6 |
p. 42- 1 p. |
artikel |
29 |
Implant gettering and ion beam detection of generation impurities in silicon
|
Golja, B. |
|
1982 |
13 |
6 |
p. 23-28 6 p. |
artikel |
30 |
Ion implantation for GaAs field-effect transistors and integrated circuits
|
|
|
1982 |
13 |
6 |
p. 41- 1 p. |
artikel |
31 |
Is epitaxy right for MOS?
|
|
|
1982 |
13 |
6 |
p. 39- 1 p. |
artikel |
32 |
Maximising a 64-K RAMs operating margins
|
|
|
1982 |
13 |
6 |
p. 40- 1 p. |
artikel |
33 |
Minority carrier injection and storage into a heavily doped emitter. Approximate solution for auger recombination
|
|
|
1982 |
13 |
6 |
p. 41- 1 p. |
artikel |
34 |
Modified SEM depicts operation of dense chips
|
|
|
1982 |
13 |
6 |
p. 42- 1 p. |
artikel |
35 |
Monolithically integrated circuits on gallium-arsenide basis, part 2
|
|
|
1982 |
13 |
6 |
p. 41- 1 p. |
artikel |
36 |
Monolithic integrated filter — an overview
|
|
|
1982 |
13 |
6 |
p. 41- 1 p. |
artikel |
37 |
MOS threshold voltage monitoring
|
|
|
1982 |
13 |
6 |
p. 41- 1 p. |
artikel |
38 |
New approach to thick-film resistor design
|
|
|
1982 |
13 |
6 |
p. 41- 1 p. |
artikel |
39 |
[No title]
|
Daruvala, D.J. |
|
1982 |
13 |
6 |
p. 38- 1 p. |
artikel |
40 |
[No title]
|
Krejcik, Milos |
|
1982 |
13 |
6 |
p. 38- 1 p. |
artikel |
41 |
Optimal performance of HMOS VLSI circuits
|
Kadir, H. Al Abdul |
|
1982 |
13 |
6 |
p. 11-14 4 p. |
artikel |
42 |
Origins and mimimisation of defects in sputtered thin-films
|
|
|
1982 |
13 |
6 |
p. 42- 1 p. |
artikel |
43 |
Plasma planarisation
|
|
|
1982 |
13 |
6 |
p. 42- 1 p. |
artikel |
44 |
Rapid determination of concentration and mobility profiles on thin GaAs layers
|
|
|
1982 |
13 |
6 |
p. 39- 1 p. |
artikel |
45 |
Strain sensitivity of thick-film resistors
|
|
|
1982 |
13 |
6 |
p. 40- 1 p. |
artikel |
46 |
Strip architecture fits microcomputer into less silicon
|
|
|
1982 |
13 |
6 |
p. 40- 1 p. |
artikel |
47 |
Surface enhanced and disorder induced Raman scattering from silver films
|
|
|
1982 |
13 |
6 |
p. 41- 1 p. |
artikel |
48 |
Survey of the international state of special LSI circuits for the PCM technique
|
|
|
1982 |
13 |
6 |
p. 39- 1 p. |
artikel |
49 |
The effect of boron redistribution on the theshold voltage of n-channel MOS transistors in CMOS structures
|
|
|
1982 |
13 |
6 |
p. 41-42 2 p. |
artikel |
50 |
The performance of DSW machines for VLSI research
|
Stevenson, J.T.M. |
|
1982 |
13 |
6 |
p. 33-37 5 p. |
artikel |
51 |
Thermal transients in electronic packages
|
|
|
1982 |
13 |
6 |
p. 40-41 2 p. |
artikel |