| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A correlation interface circuit for microprocessor systems
|
Jordan, J.R.
|
|
1979
|
10 |
1 |
p. 54-56
3 p.
|
artikel
|
| 2 |
Analytical approximations for diffused junctions under high-level conditions
|
|
|
1979
|
10 |
1 |
p. 65-
1 p.
|
artikel
|
| 3 |
Analytical solutions for the breakdown voltage of abrupt cylindrical and spherical junctions
|
|
|
1979
|
10 |
1 |
p. 66-
1 p.
|
artikel
|
| 4 |
An input-weighted CCD transversal filter
|
|
|
1979
|
10 |
1 |
p. 66-
1 p.
|
artikel
|
| 5 |
An observation by photoconductivity of strain splitting of shallow bulk donors located near to the surface in silicon MOS devices
|
|
|
1979
|
10 |
1 |
p. 65-
1 p.
|
artikel
|
| 6 |
An optical pattern generator for large area devices and direct wafer stepping
|
Milne, A.D.
|
|
1979
|
10 |
1 |
p. 5-14
10 p.
|
artikel
|
| 7 |
Application of the direct observation of nuclear reaction to the study of ion implantation
|
|
|
1979
|
10 |
1 |
p. 66-
1 p.
|
artikel
|
| 8 |
A simple two-port model of the metal oxide semiconductor transistor
|
Kumar, Umesh
|
|
1979
|
10 |
1 |
p. 50-53
4 p.
|
artikel
|
| 9 |
A study of Pd2Si films on silicon using Auger electron spectroscopy
|
|
|
1979
|
10 |
1 |
p. 66-
1 p.
|
artikel
|
| 10 |
A study of the gold acceptor in a silicon p + n junction and an n-type MOS capacitor by thermally stimulated current and capacitance measurements
|
|
|
1979
|
10 |
1 |
p. 65-
1 p.
|
artikel
|
| 11 |
A study of the layer and junction properties of boron implantation in silicon
|
|
|
1979
|
10 |
1 |
p. 68-
1 p.
|
artikel
|
| 12 |
Automated test methods to cneck fast anlogue-to-digital converters
|
|
|
1979
|
10 |
1 |
p. 69-
1 p.
|
artikel
|
| 13 |
Bias field margin degradation due to long-term memory operation in 16kbit bubble memory chips
|
|
|
1979
|
10 |
1 |
p. 64-
1 p.
|
artikel
|
| 14 |
Comparative studies of photoresist processing of microelectronics regarding chemical pollution, shortage and cost
|
|
|
1979
|
10 |
1 |
p. 67-
1 p.
|
artikel
|
| 15 |
Dendritic growth of silicon thin films on alumina ceramic and their application to solar cells
|
|
|
1979
|
10 |
1 |
p. 69-
1 p.
|
artikel
|
| 16 |
Density of states determination of mixed semiconductors by neutron diffraction
|
|
|
1979
|
10 |
1 |
p. 67-
1 p.
|
artikel
|
| 17 |
Detection of molecular films by harmonic generation of surface acoustic waves
|
|
|
1979
|
10 |
1 |
p. 67-
1 p.
|
artikel
|
| 18 |
Discharge of MNOS structures at elevated temperatures
|
|
|
1979
|
10 |
1 |
p. 66-
1 p.
|
artikel
|
| 19 |
Editorial
|
Butcher, John B.
|
|
1979
|
10 |
1 |
p. 3-
1 p.
|
artikel
|
| 20 |
Editorial Board
|
|
|
1979
|
10 |
1 |
p. 1-
1 p.
|
artikel
|
| 21 |
Evaluation of Si ribbon crystals for solar cells
|
|
|
1979
|
10 |
1 |
p. 67-
1 p.
|
artikel
|
| 22 |
Fabrication and characteristics of MOS-FETs incorporating anodic aluminium oxide in the gate structure
|
|
|
1979
|
10 |
1 |
p. 66-
1 p.
|
artikel
|
| 23 |
Fabrication of 3μm bubble 80kbit chips
|
|
|
1979
|
10 |
1 |
p. 68-
1 p.
|
artikel
|
| 24 |
Far-infrared absorption of large electron-hole drops in stressed Ge
|
|
|
1979
|
10 |
1 |
p. 67-
1 p.
|
artikel
|
| 25 |
Flat TV panels with polycrystalline layers
|
|
|
1979
|
10 |
1 |
p. 64-
1 p.
|
artikel
|
| 26 |
Frozen-in native defects in semiconductor compounds
|
|
|
1979
|
10 |
1 |
p. 66-
1 p.
|
artikel
|
| 27 |
High-field transport in NiO and Ni1−xLixO thin films
|
|
|
1979
|
10 |
1 |
p. 67-
1 p.
|
artikel
|
| 28 |
High-performance microprocessor architectures
|
|
|
1979
|
10 |
1 |
p. 64-
1 p.
|
artikel
|
| 29 |
High-voltage damage and low-frequency noise in thick-film resistors
|
|
|
1979
|
10 |
1 |
p. 65-
1 p.
|
artikel
|
| 30 |
Impurity bands in moderately doped semiconductors and their effect on the MOS C-V freeze-out characteristics
|
|
|
1979
|
10 |
1 |
p. 66-
1 p.
|
artikel
|
| 31 |
Injection of electrons from the surface breakdown region of a p-n junction into thermal SiO2
|
|
|
1979
|
10 |
1 |
p. 65-
1 p.
|
artikel
|
| 32 |
Integrated circuits with leads on flexible tape
|
|
|
1979
|
10 |
1 |
p. 68-
1 p.
|
artikel
|
| 33 |
Invited: I2L — Efficient bipolar LSI extension
|
|
|
1979
|
10 |
1 |
p. 63-
1 p.
|
artikel
|
| 34 |
Invited: molecular beam epitaxy with ionised beam doping
|
|
|
1979
|
10 |
1 |
p. 68-
1 p.
|
artikel
|
| 35 |
Invited: vertical injection logic — An improved structure of integrated injection logic
|
|
|
1979
|
10 |
1 |
p. 63-
1 p.
|
artikel
|
| 36 |
Memory testing: Characterisation, timing and patterns
|
Rosenfeld, Paul
|
|
1979
|
10 |
1 |
p. 27-34
8 p.
|
artikel
|
| 37 |
Metal bumps aid semiconductors and hybrid circuit producers
|
|
|
1979
|
10 |
1 |
p. 68-
1 p.
|
artikel
|
| 38 |
58MHz surface-acoustic-wave TV-intermediate-frequency filter using ZnO-sputtered film
|
|
|
1979
|
10 |
1 |
p. 69-
1 p.
|
artikel
|
| 39 |
Monolithic elastic surface wave amplifiers of continuous operation
|
|
|
1979
|
10 |
1 |
p. 69-
1 p.
|
artikel
|
| 40 |
Noise immunity of CMOS integrated circuits
|
Chesney, T.
|
|
1979
|
10 |
1 |
p. 15-26
12 p.
|
artikel
|
| 41 |
[No title]
|
Baker, Peter D.W.
|
|
1979
|
10 |
1 |
p. 70-
1 p.
|
artikel
|
| 42 |
[No title]
|
Matthews, R.B.
|
|
1979
|
10 |
1 |
p. 70-
1 p.
|
artikel
|
| 43 |
[No title]
|
Matthews, R.B.
|
|
1979
|
10 |
1 |
p. 71-
1 p.
|
artikel
|
| 44 |
[No title]
|
Bloyce, M.R.E.
|
|
1979
|
10 |
1 |
p. 70-71
2 p.
|
artikel
|
| 45 |
On the new procedure for the determination of surface conditions in thin films with internal layer inhomogeneity
|
|
|
1979
|
10 |
1 |
p. 66-
1 p.
|
artikel
|
| 46 |
Optical image memory in slow surface states in germanium read out by acoustic surface wave
|
|
|
1979
|
10 |
1 |
p. 64-
1 p.
|
artikel
|
| 47 |
Phase tuning in optical directional coupler
|
|
|
1979
|
10 |
1 |
p. 64-
1 p.
|
artikel
|
| 48 |
Phosphorous buried emitter I2L for high-voltage operating circuits
|
|
|
1979
|
10 |
1 |
p. 63-
1 p.
|
artikel
|
| 49 |
Phosphorus diffusion in gallium arsenide
|
|
|
1979
|
10 |
1 |
p. 68-
1 p.
|
artikel
|
| 50 |
Photodiode arrays — Characteristics and applications
|
Tassell, C.
|
|
1979
|
10 |
1 |
p. 35-44
10 p.
|
artikel
|
| 51 |
Polycrystalline silicon solar cells on metallurgical silicon substrates
|
|
|
1979
|
10 |
1 |
p. 68-69
2 p.
|
artikel
|
| 52 |
Polyimide supported micro-ramps for high density circuit interconnection
|
|
|
1979
|
10 |
1 |
p. 69-
1 p.
|
artikel
|
| 53 |
Reflection of Gulyaev-Bleustein and Rayleigh waves from rectangular and curved ends of crystals
|
|
|
1979
|
10 |
1 |
p. 64-
1 p.
|
artikel
|
| 54 |
Resonant interaction of acceptor states and optical phonons in silicon
|
|
|
1979
|
10 |
1 |
p. 68-
1 p.
|
artikel
|
| 55 |
Static induction logic-A simple structure with very low switching energy and very high packing density
|
|
|
1979
|
10 |
1 |
p. 69-
1 p.
|
artikel
|
| 56 |
Supply lines for rapid integrated circuits on multilayer boards
|
|
|
1979
|
10 |
1 |
p. 68-
1 p.
|
artikel
|
| 57 |
Surface acoustic wave memory using semiconductor laser
|
|
|
1979
|
10 |
1 |
p. 63-64
2 p.
|
artikel
|
| 58 |
Surface states and barrier height at metal-GaAs interface
|
|
|
1979
|
10 |
1 |
p. 65-
1 p.
|
artikel
|
| 59 |
Tantalum thin-film RC circuit technology for a universal active filter
|
|
|
1979
|
10 |
1 |
p. 64-65
2 p.
|
artikel
|
| 60 |
The case for multichip LSI packaging of high-reliability military electronics
|
|
|
1979
|
10 |
1 |
p. 69-
1 p.
|
artikel
|
| 61 |
The challenges of the microelectronics era
|
Hogan, C. Lester
|
|
1979
|
10 |
1 |
p. 57-62
6 p.
|
artikel
|
| 62 |
The effect of electron irradiation on CdS-PbTe and CdS-Te thin-film diodes
|
|
|
1979
|
10 |
1 |
p. 66-
1 p.
|
artikel
|
| 63 |
The electronic properties of epitaxial layers
|
|
|
1979
|
10 |
1 |
p. 67-68
2 p.
|
artikel
|
| 64 |
The electronic properties of epitaxial layers. Part 1
|
|
|
1979
|
10 |
1 |
p. 67-
1 p.
|
artikel
|
| 65 |
The f T of bipolar transistors with thin lightly doped bases
|
|
|
1979
|
10 |
1 |
p. 65-
1 p.
|
artikel
|
| 66 |
Theory of iron-group impurities in II-VI compounds
|
|
|
1979
|
10 |
1 |
p. 67-
1 p.
|
artikel
|
| 67 |
Thermal comparison of flip-flop relative to chip-and-wire semiconductor attachment in hybrid circuits: an experimental approach
|
|
|
1979
|
10 |
1 |
p. 68-
1 p.
|
artikel
|
| 68 |
The shape of the input characteristics of BJTs in the common base avalanche mode
|
Aharoni, H.
|
|
1979
|
10 |
1 |
p. 45-49
5 p.
|
artikel
|
| 69 |
The structure of cleaned and polished (100) GaAs surfaces
|
|
|
1979
|
10 |
1 |
p. 67-
1 p.
|
artikel
|
| 70 |
Thick-film advances simplify complex hybrid module design
|
|
|
1979
|
10 |
1 |
p. 65-
1 p.
|
artikel
|
| 71 |
Thin-film multilayer capacitors using pyrolytically deposited silicon dioxide
|
|
|
1979
|
10 |
1 |
p. 65-
1 p.
|
artikel
|
| 72 |
Turning up system faults with gated-noise testing
|
|
|
1979
|
10 |
1 |
p. 69-
1 p.
|
artikel
|
| 73 |
Two new approaches simplify testing of microprocessors
|
|
|
1979
|
10 |
1 |
p. 69-
1 p.
|
artikel
|
| 74 |
Valley degeneracy of electrons in accumulation and inversion layers on Si(111) surface
|
|
|
1979
|
10 |
1 |
p. 67-
1 p.
|
artikel
|
| 75 |
Xerographic development of images stored in PLZT FE/PC devices
|
|
|
1979
|
10 |
1 |
p. 64-
1 p.
|
artikel
|
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