| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Adsorption-desorption kinetics of NO on a Pd surface with thermal desorption spectroscopy and molecular beam relaxation spectrometry
|
Xi, Guangkang
|
|
1993
|
44 |
2 |
p. 79-82
4 p.
|
artikel
|
| 2 |
An analysis of the structure of the 13X molecular sieve in ion exchange
|
Da-Ming, Sun
|
|
1993
|
44 |
2 |
p. 75-78
4 p.
|
artikel
|
| 3 |
Announcement
|
|
|
1993
|
44 |
2 |
p. 163-
1 p.
|
artikel
|
| 4 |
A precision gas flowmeter for vacuum metrology
|
Jousten, K
|
|
1993
|
44 |
2 |
p. 135-141
7 p.
|
artikel
|
| 5 |
A study of HCD ion plated titanium nitride films
|
Ai, CF
|
|
1993
|
44 |
2 |
p. 99-104
6 p.
|
artikel
|
| 6 |
Conferences on related topics
|
|
|
1993
|
44 |
2 |
p. 159-160
2 p.
|
artikel
|
| 7 |
Development of a QMS with a ceramic single-piece quadrupole
|
Hiroki, Seiji
|
|
1993
|
44 |
2 |
p. 71-74
4 p.
|
artikel
|
| 8 |
Direct current diode sputtering: a study of the thermal power dissipated in the substrate
|
Mahéo, D
|
|
1993
|
44 |
2 |
p. 117-121
5 p.
|
artikel
|
| 9 |
Editorial: Software Survey Section
|
|
|
1993
|
44 |
2 |
p. i-iv
nvt p.
|
artikel
|
| 10 |
Electrical resistivity of crystalline Sb2Se3
|
Abd El-Salam, F
|
|
1993
|
44 |
2 |
p. 111-116
6 p.
|
artikel
|
| 11 |
Electron microscopy of structurally different titanium disilicide films, obtained in one technological process
|
Kiselev, NA
|
|
1993
|
44 |
2 |
p. 143-150
8 p.
|
artikel
|
| 12 |
Estimation of the coating/substrate interface temperature during deposition by impulse plasma excitation
|
Zdunek, Krzystof
|
|
1993
|
44 |
2 |
p. 93-97
5 p.
|
artikel
|
| 13 |
Fusion division of IUVSTA. Report presented to the Triennial Scientific Highlights Seminar (September 1991)
|
Coad, JP
|
|
1993
|
44 |
2 |
p. 155-157
3 p.
|
artikel
|
| 14 |
Matching of TiN coating structures by plasma nitriding of substrates
|
Zlatanovi'c, M
|
|
1993
|
44 |
2 |
p. 83-88
6 p.
|
artikel
|
| 15 |
Optical properties of ZnO thin films deposited by dc reactive magnetron sputtering
|
Meng, Li-jian
|
|
1993
|
44 |
2 |
p. 105-109
5 p.
|
artikel
|
| 16 |
Structure of a-Si: H/a-Si1−x C x: H multilayers deposited in a reactor with automated substrate holder
|
Bertomeu, J
|
|
1993
|
44 |
2 |
p. 129-134
6 p.
|
artikel
|
| 17 |
Test of a model solar bakeout system for laser interferometer gravitational wave detectors
|
Berinson, D
|
|
1993
|
44 |
2 |
p. 151-154
4 p.
|
artikel
|
| 18 |
The effect of scaling on contact and interconnect properties with sputtered TiSi2 metallization
|
Nahar, RK
|
|
1993
|
44 |
2 |
p. 89-92
4 p.
|
artikel
|
| 19 |
Use of a CCl2F2/H2 plasma for the reactive ion etching of GaAs
|
Horniaková, A
|
|
1993
|
44 |
2 |
p. 123-127
5 p.
|
artikel
|
| 20 |
Vacuum technology and applications
|
Steckelmacher, W
|
|
1993
|
44 |
2 |
p. 161-
1 p.
|
artikel
|
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