| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
998. Absorption of light in pyrargirite and its amorphous films
|
|
|
1974
|
24 |
7 |
p. 324-
1 p.
|
artikel
|
| 2 |
1026. Acceleration of ions by relativistic electron beam
|
|
|
1974
|
24 |
7 |
p. 326-
1 p.
|
artikel
|
| 3 |
1038. A device for cleaving single crystals in vacuum
|
|
|
1974
|
24 |
7 |
p. 327-
1 p.
|
artikel
|
| 4 |
947. A high-vacuum sorption pump
|
|
|
1974
|
24 |
7 |
p. 320-
1 p.
|
artikel
|
| 5 |
1094. Alloy for cathodes
|
|
|
1974
|
24 |
7 |
p. 330-
1 p.
|
artikel
|
| 6 |
1093. Alloy for cathode units
|
|
|
1974
|
24 |
7 |
p. 330-
1 p.
|
artikel
|
| 7 |
948. A magnetic discharge evacuation system
|
|
|
1974
|
24 |
7 |
p. 320-
1 p.
|
artikel
|
| 8 |
964. A method for measurement of thickness of thin dielectric films during the process of their evaporation in vacuum
|
|
|
1974
|
24 |
7 |
p. 322-
1 p.
|
artikel
|
| 9 |
999. An analysis of electron-ion methods of preparation of clean films of metals
|
|
|
1974
|
24 |
7 |
p. 324-
1 p.
|
artikel
|
| 10 |
993. An apparatus for determination of the deposition rate of vacuum coatings
|
|
|
1974
|
24 |
7 |
p. 324-
1 p.
|
artikel
|
| 11 |
997. An ellipsometric methd for measurement of dispersion and thickness of transparent films on metallic substrates
|
|
|
1974
|
24 |
7 |
p. 324-
1 p.
|
artikel
|
| 12 |
909. A new method for the determination of the penetration depth of electron in insulators
|
|
|
1974
|
24 |
7 |
p. 317-
1 p.
|
artikel
|
| 13 |
922. Angular and energy distribution of electrons scattered by poly- and single crystal molybdenum
|
|
|
1974
|
24 |
7 |
p. 318-
1 p.
|
artikel
|
| 14 |
950. An inversion magnetron manometer
|
|
|
1974
|
24 |
7 |
p. 321-
1 p.
|
artikel
|
| 15 |
1092. Anisotropy of dislocation internal friction in copper whiskers
|
|
|
1974
|
24 |
7 |
p. 330-
1 p.
|
artikel
|
| 16 |
951. A semiconducting vacuum gauge
|
|
|
1974
|
24 |
7 |
p. 321-
1 p.
|
artikel
|
| 17 |
939. A semi-empirical approach to CO2 laser kinetics
|
|
|
1974
|
24 |
7 |
p. 319-320
2 p.
|
artikel
|
| 18 |
968. Autoepitaxial growth of GaAs in the system Ga(CH3)3-AsH3-H2
|
|
|
1974
|
24 |
7 |
p. 322-
1 p.
|
artikel
|
| 19 |
905. Barium adsorption on single films of copper, silver and iron
|
|
|
1974
|
24 |
7 |
p. 317-
1 p.
|
artikel
|
| 20 |
918. Basic achievements and problems of investigation of interaction of atomic particles with solid surfaces
|
|
|
1974
|
24 |
7 |
p. 318-
1 p.
|
artikel
|
| 21 |
901. Calculation of the coefficients of diffusion of atoms and ions of mercury, cadmium and zinc in argon
|
|
|
1974
|
24 |
7 |
p. 317-
1 p.
|
artikel
|
| 22 |
1033. Cathode-ray excited luminescence and thermoluminescence of a synthetic calcite monocrystal
|
|
|
1974
|
24 |
7 |
p. 326-
1 p.
|
artikel
|
| 23 |
1033. Cathode-ray excited luminescence and thermoluminescence of a synthetic calcite monocrystal
|
|
|
1974
|
24 |
7 |
p. 326-
1 p.
|
artikel
|
| 24 |
917. Changes in properties of Si-SiO2 interface at medium energy ion bombardment
|
|
|
1974
|
24 |
7 |
p. 318-
1 p.
|
artikel
|
| 25 |
912. Changes in structure of germanium and silicon at ion bombardment and subsequent annealing
|
|
|
1974
|
24 |
7 |
p. 318-
1 p.
|
artikel
|
| 26 |
977. Character of spontaneous deformation in barium titanate vacuum condensates
|
|
|
1974
|
24 |
7 |
p. 323-
1 p.
|
artikel
|
| 27 |
1029. Combined hopping and tunnelling mechanism of electro transport and doping effects in chloranil-trimethylamine charge-transfer complex
|
|
|
1974
|
24 |
7 |
p. 326-
1 p.
|
artikel
|
| 28 |
Complete new range of quality flow-meters
|
|
|
1974
|
24 |
7 |
p. 310-316
7 p.
|
artikel
|
| 29 |
1041. Composition and irradiation-temperature dependence of the uniaxial anisotropy energy of large-grain iron-nickel alloy thin films
|
|
|
1974
|
24 |
7 |
p. 327-
1 p.
|
artikel
|
| 30 |
936. Conductivity and stimulated emission in CdS under intense electron beam excitation
|
|
|
1974
|
24 |
7 |
p. 319-
1 p.
|
artikel
|
| 31 |
1022. Controlled discharger with magnetic field
|
|
|
1974
|
24 |
7 |
p. 326-
1 p.
|
artikel
|
| 32 |
927. Correlation between absorption hands and implanted alkali ions in Lif
|
|
|
1974
|
24 |
7 |
p. 319-
1 p.
|
artikel
|
| 33 |
1046. Correlation between scattering of light and density of CdS single cyrstals at thermal treatment
|
|
|
1974
|
24 |
7 |
p. 327-328
2 p.
|
artikel
|
| 34 |
958. Crystalline phases in Si3N4 films on silicon
|
|
|
1974
|
24 |
7 |
p. 321-
1 p.
|
artikel
|
| 35 |
983. Crystallization of amorphous films of silicon nitride at ion bombardment with subsequent annealing
|
|
|
1974
|
24 |
7 |
p. 323-
1 p.
|
artikel
|
| 36 |
1011. Determination of density of electron current to anode of a vacuum diode with point cathode operated in the regime of burst emission
|
|
|
1974
|
24 |
7 |
p. 325-
1 p.
|
artikel
|
| 37 |
938. Determination of He-Ne laser parameter using an intra-cavity rotatable reflector
|
|
|
1974
|
24 |
7 |
p. 319-
1 p.
|
artikel
|
| 38 |
976. Determination of wettability of substrates by island vacuum condensates
|
|
|
1974
|
24 |
7 |
p. 322-
1 p.
|
artikel
|
| 39 |
950. Development of relief structures on Si surfaces by ion bombardment
|
|
|
1974
|
24 |
7 |
p. 319-
1 p.
|
artikel
|
| 40 |
903. Diffusion of impurities implanted into silicon by ion bombardment
|
|
|
1974
|
24 |
7 |
p. 317-
1 p.
|
artikel
|
| 41 |
1077. Dislocations in molybdenum single crystals preprared by zonal melting
|
|
|
1974
|
24 |
7 |
p. 329-
1 p.
|
artikel
|
| 42 |
1087. Dislocation structures in dehydrogenated niobium
|
|
|
1974
|
24 |
7 |
p. 330-
1 p.
|
artikel
|
| 43 |
955. Dispersion and piezoelectri coupling of Rayleigh acoustic surface waves in a layered CdSe on Y-Z-LiNbO3 structure
|
|
|
1974
|
24 |
7 |
p. 321-
1 p.
|
artikel
|
| 44 |
940. Dissociation mechanism in pulsed and continuous CO2 lasers
|
|
|
1974
|
24 |
7 |
p. 320-
1 p.
|
artikel
|
| 45 |
974. Doping of epitaxial silicon films by phosphorus and arsenic in vacuum
|
|
|
1974
|
24 |
7 |
p. 322-
1 p.
|
artikel
|
| 46 |
1032. Effect of heat treatment on the 0.93, 1.0 and 1.25 eV luminescence bands in n-GaAs
|
|
|
1974
|
24 |
7 |
p. 326-
1 p.
|
artikel
|
| 47 |
996. Effect of narrow stripe cutting of a thin ferromagnetic film on its easy axis orientation
|
|
|
1974
|
24 |
7 |
p. 324-
1 p.
|
artikel
|
| 48 |
1065. Elastic properties and tensile strength of germanium whiskers
|
|
|
1974
|
24 |
7 |
p. 329-
1 p.
|
artikel
|
| 49 |
907. Electrical conductivity of zinc oxide in atomic nitrogen
|
|
|
1974
|
24 |
7 |
p. 317-
1 p.
|
artikel
|
| 50 |
1063. Electric properties of Pb1−x Sn xSe crystals grown from vapour phase
|
|
|
1974
|
24 |
7 |
p. 329-
1 p.
|
artikel
|
| 51 |
Electro-ion pump: new models
|
Granville-Phillips Co,
|
|
1974
|
24 |
7 |
p. 310-
1 p.
|
artikel
|
| 52 |
985. Electron diffraction investigation of In2S3 films prepared by vacuum deposition
|
|
|
1974
|
24 |
7 |
p. 323-
1 p.
|
artikel
|
| 53 |
990. Electron diffraction investigation of structure of amorphous films of germanium telluride and selenide
|
|
|
1974
|
24 |
7 |
p. 323-
1 p.
|
artikel
|
| 54 |
1003. Electron diffraction study of the local atomic arrangement in amorphous iron and nickel films
|
|
|
1974
|
24 |
7 |
p. 324-
1 p.
|
artikel
|
| 55 |
906. Electronic spectra of absorption and radiation of naphtalene and naphtylamine molecules absorped by zeolites and some amorphous adsorbents
|
|
|
1974
|
24 |
7 |
p. 317-
1 p.
|
artikel
|
| 56 |
1035. Electron microscopical technique for investigation of structure of carbon, filaments
|
|
|
1974
|
24 |
7 |
p. 326-327
2 p.
|
artikel
|
| 57 |
1023. Energy characteristic of various modes of operation of pulsed coaxial plasma accelator
|
|
|
1974
|
24 |
7 |
p. 326-
1 p.
|
artikel
|
| 58 |
923. Energy spectrum of electrons of kinetic emission at high energy of bombarding ions
|
|
|
1974
|
24 |
7 |
p. 318-
1 p.
|
artikel
|
| 59 |
967. Epitaxy of Cd on muscovite
|
|
|
1974
|
24 |
7 |
p. 322-
1 p.
|
artikel
|
| 60 |
932. Evaluation of the nature of the radiative emission processes from lattice defect centres in cadmium telluride together with their associated quenching mechanisms
|
|
|
1974
|
24 |
7 |
p. 319-
1 p.
|
artikel
|
| 61 |
Field emission studied of clean and contaminated silver tips
|
|
|
1974
|
24 |
7 |
p. 326-
1 p.
|
artikel
|
| 62 |
937. Formation and annealing of isolation regions in silicon through Si
|
|
|
1974
|
24 |
7 |
p. 319-
1 p.
|
artikel
|
| 63 |
914.Formation and removal of SiO2 films on silicon surface in glow discharge
|
|
|
1974
|
24 |
7 |
p. 318-
1 p.
|
artikel
|
| 64 |
1064. Formation of high-angle grain boundaries under the action of mechanical stresses
|
|
|
1974
|
24 |
7 |
p. 329-
1 p.
|
artikel
|
| 65 |
1072. Formation of zirconium dioxide in molybdenum alloy
|
|
|
1974
|
24 |
7 |
p. 329-
1 p.
|
artikel
|
| 66 |
1016. Frequency stabilizationof CO2 laser
|
|
|
1974
|
24 |
7 |
p. 325-
1 p.
|
artikel
|
| 67 |
933. Gold adsorption on clean germaniun field emitters
|
|
|
1974
|
24 |
7 |
p. 319-
1 p.
|
artikel
|
| 68 |
960. Growth of autoepitaxial germanium films on substrates of rectangular shape
|
|
|
1974
|
24 |
7 |
p. 321-322
2 p.
|
artikel
|
| 69 |
987. Heat-sensitive thin films prepared by evaporation of TiO2 in vacuum
|
|
|
1974
|
24 |
7 |
p. 323-
1 p.
|
artikel
|
| 70 |
1036. Helium field ion microscope wityh ultrapure imaging gas
|
|
|
1974
|
24 |
7 |
p. 327-
1 p.
|
artikel
|
| 71 |
1010. He-Ne laser with a delay line with nonlinearly gas
|
|
|
1974
|
24 |
7 |
p. 325-
1 p.
|
artikel
|
| 72 |
1071. High-temperature investigation of stationary and nonequilibrium electric conductivity of cadnium sulphide crystals
|
|
|
1974
|
24 |
7 |
p. 329-
1 p.
|
artikel
|
| 73 |
High-vacuum feedthrus in mini-sizes
|
Ceramaseal Inc,
|
|
1974
|
24 |
7 |
p. 309-
1 p.
|
artikel
|
| 74 |
941. Increased efficiencyt and new CW transitions in the helium-iodine laser system
|
|
|
1974
|
24 |
7 |
p. 320-
1 p.
|
artikel
|
| 75 |
916. Induced polarization of adsorbed molecules in intensive light field
|
|
|
1974
|
24 |
7 |
p. 318-
1 p.
|
artikel
|
| 76 |
1021. Infrared-optical transducer
|
|
|
1974
|
24 |
7 |
p. 325-326
2 p.
|
artikel
|
| 77 |
1070. Internal friction and tensile strength of germanium whiskers
|
|
|
1974
|
24 |
7 |
p. 329-
1 p.
|
artikel
|
| 78 |
1057. Internal friction of alkali haloide whiskers
|
|
|
1974
|
24 |
7 |
p. 328-
1 p.
|
artikel
|
| 79 |
1066. Internal friction of pure of tellurium single crystals
|
|
|
1974
|
24 |
7 |
p. 329-
1 p.
|
artikel
|
| 80 |
1054. Interstitial superstructures of vanadium deuterides
|
|
|
1974
|
24 |
7 |
p. 328-
1 p.
|
artikel
|
| 81 |
1037. Investigation of cathode luminescence of epitaxial p-n junctions in gallium phosphide with the aid of a scanning electron microscope
|
|
|
1974
|
24 |
7 |
p. 327-
1 p.
|
artikel
|
| 82 |
1089. Investigation of defects in titanium dioxide by the method of depolarization thermostimulated currents
|
|
|
1974
|
24 |
7 |
p. 330-
1 p.
|
artikel
|
| 83 |
1083. Investigation of directed crystallization of Pb-Sn and Al-Cu alloys
|
|
|
1974
|
24 |
7 |
p. 330-
1 p.
|
artikel
|
| 84 |
1076. Investigation of growth conditions and physical properties of single crystals of tungsten-rhenium alloys
|
|
|
1974
|
24 |
7 |
p. 329-
1 p.
|
artikel
|
| 85 |
1048. Investigation of interaction in the PbTe-Inte system
|
|
|
1974
|
24 |
7 |
p. 328-
1 p.
|
artikel
|
| 86 |
1018. Investigation of materials for electrode walls of canal of open-cycle magnetohydrodynamic generator with temperature of surface of 1400 to 1850°C
|
|
|
1974
|
24 |
7 |
p. 325-
1 p.
|
artikel
|
| 87 |
1001. Investigation of micromorphology of autoepitaxial gallium arsenide, the dependence on substrate orientation
|
|
|
1974
|
24 |
7 |
p. 324-
1 p.
|
artikel
|
| 88 |
957. Investigation of migration of silicon in the process of growth of epitaxial gallium arsenide films from vapour phase
|
|
|
1974
|
24 |
7 |
p. 321-
1 p.
|
artikel
|
| 89 |
986. Investigation of molecular composition of vapours and structure of condensate at evaporation of some arsenic chalcogenides by laser radiation
|
|
|
1974
|
24 |
7 |
p. 323-
1 p.
|
artikel
|
| 90 |
925. Investigation of negative ion sputtering of some metals at their bombardment with cesium ions
|
|
|
1974
|
24 |
7 |
p. 318-
1 p.
|
artikel
|
| 91 |
1084. Investigation of oversaturation of solid solutions and temperature regime at quenching from liquid state
|
|
|
1974
|
24 |
7 |
p. 330-
1 p.
|
artikel
|
| 92 |
1034. Investigation of p-n junctions with and without oxide layer with the aid of electron mirror microscopy at shadow imaging
|
|
|
1974
|
24 |
7 |
p. 326-
1 p.
|
artikel
|
| 93 |
1017. Investigation of polarization of radiation from a continuous wave argon laser immerse in transversal magnetic field
|
|
|
1974
|
24 |
7 |
p. 325-
1 p.
|
artikel
|
| 94 |
915. Investigation of real structure of GaAs by electron microscopy methods
|
|
|
1974
|
24 |
7 |
p. 318-
1 p.
|
artikel
|
| 95 |
1056. Investigation of regularities of formation of dislocation structure in alkali haloide crystals of predetermined shape grown in solid cruclible by the Bridgman method
|
|
|
1974
|
24 |
7 |
p. 328-
1 p.
|
artikel
|
| 96 |
1097. Investigation of some problem of interaction of alumina ceramics with metals at combination of metallization and sealing process
|
|
|
1974
|
24 |
7 |
p. 331-
1 p.
|
artikel
|
| 97 |
1078. Investigation of structure and defects of molydbenum single crystals grown by electron-beam zonal melting
|
|
|
1974
|
24 |
7 |
p. 329-
1 p.
|
artikel
|
| 98 |
1075. Investigation of structure and properties of oriented tungsten single crystals
|
|
|
1974
|
24 |
7 |
p. 329-
1 p.
|
artikel
|
| 99 |
913. Investigation of surface layer of silicon after etching in high-frequency gas-discharge plasma
|
|
|
1974
|
24 |
7 |
p. 318-
1 p.
|
artikel
|
| 100 |
1028. Investigation of the anisotropy of surface conductance in n-type germanium
|
|
|
1974
|
24 |
7 |
p. 326-
1 p.
|
artikel
|
| 101 |
1024. Investigation of the ionization zone in two-lens accelerator with closed drift of electrons
|
|
|
1974
|
24 |
7 |
p. 326-
1 p.
|
artikel
|
| 102 |
959. Investigation of the perfectness degree of autoepitaxial germanium films
|
|
|
1974
|
24 |
7 |
p. 321-
1 p.
|
artikel
|
| 103 |
1058. Investigation of the process of group growth of germanium single crystals by the Stepanov method in rectangular thermal zone
|
|
|
1974
|
24 |
7 |
p. 328-
1 p.
|
artikel
|
| 104 |
1099. Investigation of the zone titanium-to-high alumina ceramics seals
|
|
|
1974
|
24 |
7 |
p. 331-
1 p.
|
artikel
|
| 105 |
1030. Ion implantation doping of compound semiconductors
|
|
|
1974
|
24 |
7 |
p. 326-
1 p.
|
artikel
|
| 106 |
1040. Ion kinetic energy spectometry
|
|
|
1974
|
24 |
7 |
p. 327-
1 p.
|
artikel
|
| 107 |
1025. Ions bombarding cathode of pulsed plasma accelerator and their participation in generation of heat-flows
|
|
|
1974
|
24 |
7 |
p. 326-
1 p.
|
artikel
|
| 108 |
1068. Kinetic properties of gadolinium at high temperatures
|
|
|
1974
|
24 |
7 |
p. 329-
1 p.
|
artikel
|
| 109 |
1067. Kinetic properties of scandium at high temperatures
|
|
|
1974
|
24 |
7 |
p. 329-
1 p.
|
artikel
|
| 110 |
949. Magnetic-discharge evacuation system
|
|
|
1974
|
24 |
7 |
p. 320-321
2 p.
|
artikel
|
| 111 |
988. Measurement of Hall voltage in thin-film Ti + SiO cermets
|
|
|
1974
|
24 |
7 |
p. 323-
1 p.
|
artikel
|
| 112 |
992. Measurement of thickness of thin films used in electron microscopy
|
|
|
1974
|
24 |
7 |
p. 324-
1 p.
|
artikel
|
| 113 |
943. Measurement of wall hang-up time for the linear pinched discharge
|
|
|
1974
|
24 |
7 |
p. 320-
1 p.
|
artikel
|
| 114 |
1085. Measurements of dislocation pinning and dislocation damping in cold-worked copper at 1 Hz
|
|
|
1974
|
24 |
7 |
p. 330-
1 p.
|
artikel
|
| 115 |
1100. Mechanical characteristics of compressed non-matched glassto-metal seals and their dependence on contact pressure
|
|
|
1974
|
24 |
7 |
p. 331-
1 p.
|
artikel
|
| 116 |
965. Mechanical instabilities in thim films caused by substrate surface microrelief changes induced by illumination
|
|
|
1974
|
24 |
7 |
p. 322-
1 p.
|
artikel
|
| 117 |
970. Microscopical pores in film structures metal-dielectric
|
|
|
1974
|
24 |
7 |
p. 322-
1 p.
|
artikel
|
| 118 |
945. Microwave multiple-pulse breakdown in nitric oxide
|
|
|
1974
|
24 |
7 |
p. 320-
1 p.
|
artikel
|
| 119 |
944. Microwave radiometric investigation of the positive column instability is pulsed nitrogen discharges
|
|
|
1974
|
24 |
7 |
p. 320-
1 p.
|
artikel
|
| 120 |
1053. Morphology of teragonal boron filaments
|
|
|
1974
|
24 |
7 |
p. 328-
1 p.
|
artikel
|
| 121 |
910. Mossbauer spectroscopy of 57Fe implanted into metals
|
|
|
1974
|
24 |
7 |
p. 317-
1 p.
|
artikel
|
| 122 |
1060. Nature of phases and kinetics of reaction diffusion in mixture of nickel and aluminium powders
|
|
|
1974
|
24 |
7 |
p. 328-
1 p.
|
artikel
|
| 123 |
1043. New method for the determination of the composition and structure of an adsorbed film on any surface by high energy molecular beam
|
|
|
1974
|
24 |
7 |
p. 327-
1 p.
|
artikel
|
| 124 |
New resistivity unit improves freeze-drying
|
Edwards High Vacuum,
|
|
1974
|
24 |
7 |
p. 309-
1 p.
|
artikel
|
| 125 |
New vacuum gauges with process control facility
|
Edwards High Vacuum,
|
|
1974
|
24 |
7 |
p. 309-
1 p.
|
artikel
|
| 126 |
961. Observation of transitions 5D3-7Fj in cathodoluminescence of thin films of TbF3, ZnS-TbF3 and ZnS:Tb3+
|
|
|
1974
|
24 |
7 |
p. 322-
1 p.
|
artikel
|
| 127 |
1080. On crystal growth at electron cruciblesless zonal melting
|
|
|
1974
|
24 |
7 |
p. 330-
1 p.
|
artikel
|
| 128 |
1006. On disturbance by a current of superconductivity in thin narrow films
|
|
|
1974
|
24 |
7 |
p. 325-
1 p.
|
artikel
|
| 129 |
1007. On hall mobility of electrons in the space charge region of CdSe films
|
|
|
1974
|
24 |
7 |
p. 325-
1 p.
|
artikel
|
| 130 |
969. On microrelief on partial superposition of tellurium and bismuth thin films
|
|
|
1974
|
24 |
7 |
p. 322-
1 p.
|
artikel
|
| 131 |
981. On temperature and velocity of metallic particles emitted from an evaporation into vacuum
|
|
|
1974
|
24 |
7 |
p. 323-
1 p.
|
artikel
|
| 132 |
1013. On the mechanism of formation of whiskers on electrodes of electron devices
|
|
|
1974
|
24 |
7 |
p. 325-
1 p.
|
artikel
|
| 133 |
935. On the point defect production in electron-irradiated molybdenumn
|
|
|
1974
|
24 |
7 |
p. 319-
1 p.
|
artikel
|
| 134 |
1014. On the problem of nonlinear characterisation of channel electron multipliers
|
|
|
1974
|
24 |
7 |
p. 325-
1 p.
|
artikel
|
| 135 |
942. Orifice probe for plasma diagnostics: II, Multi-parameter analysis
|
|
|
1974
|
24 |
7 |
p. 320-
1 p.
|
artikel
|
| 136 |
1039. Outgassing at electrical ageing of barium and strontium titanates
|
|
|
1974
|
24 |
7 |
p. 327-
1 p.
|
artikel
|
| 137 |
1047. Oxygen partial pressures of Mn-Zn ferrites
|
|
|
1974
|
24 |
7 |
p. 328-
1 p.
|
artikel
|
| 138 |
1008. Peculiarities of design investigation of He-Cd-Se laser
|
|
|
1974
|
24 |
7 |
p. 325-
1 p.
|
artikel
|
| 139 |
1062. Photoconductivity and processes of trapping and recombination in CdGa2Se4 single crystals
|
|
|
1974
|
24 |
7 |
p. 329-
1 p.
|
artikel
|
| 140 |
931. Photoconductivity from electronic surface states in prism surfaces of zinc oxide crystals
|
|
|
1974
|
24 |
7 |
p. 319-
1 p.
|
artikel
|
| 141 |
971. Photoresistor for point exposure measurement
|
|
|
1974
|
24 |
7 |
p. 322-
1 p.
|
artikel
|
| 142 |
1090. Photoresponse measurements on ZuS polytypes
|
|
|
1974
|
24 |
7 |
p. 330-
1 p.
|
artikel
|
| 143 |
1027. Piezoresistance in n-type silicon inversion layers at low temperatures
|
|
|
1974
|
24 |
7 |
p. 326-
1 p.
|
artikel
|
| 144 |
1059. Preparation and investigation of profiled germanium single crystals with large area of cross section
|
|
|
1974
|
24 |
7 |
p. 328-
1 p.
|
artikel
|
| 145 |
1061. Progress in single crystal growth of V3Si
|
|
|
1974
|
24 |
7 |
p. 328-
1 p.
|
artikel
|
| 146 |
1020. Pulsed CO2 laser with enhanced pressure and pre-ionization on
|
|
|
1974
|
24 |
7 |
p. 325-
1 p.
|
artikel
|
| 147 |
1009. Radiation of electromagnetic waves from plasma waveguides
|
|
|
1974
|
24 |
7 |
p. 325-
1 p.
|
artikel
|
| 148 |
1000. Recovery of quartz resonators used for measurement of thickness and deposition rate of thin films
|
|
|
1974
|
24 |
7 |
p. 324-
1 p.
|
artikel
|
| 149 |
919. Reflection of slow ion of alkali metals from solid surfaces,
|
|
|
1974
|
24 |
7 |
p. 318-
1 p.
|
artikel
|
| 150 |
980. Regularities of formation of structure and properties of films prepared by vacuum evaporation of alloys based on copper
|
|
|
1974
|
24 |
7 |
p. 323-
1 p.
|
artikel
|
| 151 |
1002. Regularities of structure formation of films at vacuum evaporation of some pure metals and fractionating copper alloys
|
|
|
1974
|
24 |
7 |
p. 324-
1 p.
|
artikel
|
| 152 |
975. Relation between electro-physical properties and structure of size-quantized Insb films
|
|
|
1974
|
24 |
7 |
p. 322-
1 p.
|
artikel
|
| 153 |
Rotational and translational accommodation coefficients of nitrogen on nickel, silver and gold
|
Ramesh, V
|
|
1974
|
24 |
7 |
p. 291-294
4 p.
|
artikel
|
| 154 |
920. Scattering of alkali ions by surface of metallic and semiconducting poly- and single crystals
|
|
|
1974
|
24 |
7 |
p. 318-
1 p.
|
artikel
|
| 155 |
1004. Selfdetection of ac Josephson currents in thin-film superconducting bridges
|
|
|
1974
|
24 |
7 |
p. 324-
1 p.
|
artikel
|
| 156 |
1019. Shock tubes for investigation of nonstationary plasma flow at high magnetic Reynolds numbers
|
|
|
1974
|
24 |
7 |
p. 325-
1 p.
|
artikel
|
| 157 |
1049. Silicide formation at low temperatures by metal-SiO2 interaction
|
|
|
1974
|
24 |
7 |
p. 328-
1 p.
|
artikel
|
| 158 |
973. Silicon nitride films in manufacture of metallized photomasks
|
|
|
1974
|
24 |
7 |
p. 322-
1 p.
|
artikel
|
| 159 |
1082. Simultaneous growth of several single crystals of given shape and orientation
|
|
|
1974
|
24 |
7 |
p. 330-
1 p.
|
artikel
|
| 160 |
Small mass spectrometers applied to large power plants
|
Smalley, J
|
|
1974
|
24 |
7 |
p. 295-299
5 p.
|
artikel
|
| 161 |
921. Some peculiarities of angular, space and energy distribution of ions scattered by single crystal
|
|
|
1974
|
24 |
7 |
p. 318-
1 p.
|
artikel
|
| 162 |
1012. Some possibilities of gas-discharge switching devices with liquid metal electrodes
|
|
|
1974
|
24 |
7 |
p. 325-
1 p.
|
artikel
|
| 163 |
962. Space distribution of charged particles in a vacuum chamber at electron beam evaporation of substances
|
|
|
1974
|
24 |
7 |
p. 322-
1 p.
|
artikel
|
| 164 |
926. Spectral investigation of aggregates of phtalocyanine molecules in absorbed state
|
|
|
1974
|
24 |
7 |
p. 318-319
2 p.
|
artikel
|
| 165 |
995. Structural changes of amorphous germanium in the annealing process
|
|
|
1974
|
24 |
7 |
p. 324-
1 p.
|
artikel
|
| 166 |
994. Structure and electric properties of copper selenide thin films
|
|
|
1974
|
24 |
7 |
p. 324-
1 p.
|
artikel
|
| 167 |
979. Structure and some electro-physical properties of TISbS2 films.
|
|
|
1974
|
24 |
7 |
p. 323-
1 p.
|
artikel
|
| 168 |
956. Structure change and resistivity step of evaporated Ge films in dependence on the substrate temperature
|
|
|
1974
|
24 |
7 |
p. 321-
1 p.
|
artikel
|
| 169 |
1052. Studies of some point defects in YA103 and GdA105 single crystals
|
|
|
1974
|
24 |
7 |
p. 328-
1 p.
|
artikel
|
| 170 |
1079. Substructure of iron-nickel single crystals
|
|
|
1974
|
24 |
7 |
p. 329-
1 p.
|
artikel
|
| 171 |
1044. Surface phenomena at the time of the growth of canonical metallic points at high temperature
|
|
|
1974
|
24 |
7 |
p. 327-
1 p.
|
artikel
|
| 172 |
1005. Switching phenomenon and memory effect in thin-film hetero-junction of polycrystalline selenium-silver selenide
|
|
|
1974
|
24 |
7 |
p. 325-
1 p.
|
artikel
|
| 173 |
953. Temperature coefficient of resistance of annealed and agglomerated silver films
|
|
|
1974
|
24 |
7 |
p. 321-
1 p.
|
artikel
|
| 174 |
934. The catalytic effect on the surface of a p-n junction
|
|
|
1974
|
24 |
7 |
p. 319-
1 p.
|
artikel
|
| 175 |
1050. The conduction band of cadmium arsenide
|
|
|
1974
|
24 |
7 |
p. 328-
1 p.
|
artikel
|
| 176 |
The design and operation of a new extractor gauge for UHV pressure measurements
|
Pittaway, LG
|
|
1974
|
24 |
7 |
p. 301-305
5 p.
|
artikel
|
| 177 |
991. The dosing device for explosion evaporation of thin films
|
|
|
1974
|
24 |
7 |
p. 323-324
2 p.
|
artikel
|
| 178 |
924. The effect of ion bombardment on emissivity of surface
|
|
|
1974
|
24 |
7 |
p. 318-
1 p.
|
artikel
|
| 179 |
1086. The heat capacity of Ni3Fe experimental data from 300 to 1670°K
|
|
|
1974
|
24 |
7 |
p. 330-
1 p.
|
artikel
|
| 180 |
1055. The influence of boundaries on dislocation structure of profiled germanium single crystals
|
|
|
1974
|
24 |
7 |
p. 328-
1 p.
|
artikel
|
| 181 |
928. The influence of chemisorption of oxygen on the luminescence of CdS single crystals
|
|
|
1974
|
24 |
7 |
p. 319-
1 p.
|
artikel
|
| 182 |
1074. The influence of cleanliness degree of dislocation structure of tungsten single crystals
|
|
|
1974
|
24 |
7 |
p. 329-
1 p.
|
artikel
|
| 183 |
1096. The influence of coating type on molybdenum on kinetics of wetting by melted glasses type ZS-5 and S48-3
|
|
|
1974
|
24 |
7 |
p. 331-
1 p.
|
artikel
|
| 184 |
902. The influence of electron-beam treatment on penetration of additives of film contacts into silicon substrate
|
|
|
1974
|
24 |
7 |
p. 317-
1 p.
|
artikel
|
| 185 |
1081. The influence of high-temperature annealing on perfectness of structure of single crystals
|
|
|
1974
|
24 |
7 |
p. 330-
1 p.
|
artikel
|
| 186 |
1045. The influence of inert gas pressure on phase stability of condensed zinc and cadmium sulphides
|
|
|
1974
|
24 |
7 |
p. 327-
1 p.
|
artikel
|
| 187 |
1042. The influence of reactive gases on the ion bombardment-induced light emission from surfaces
|
|
|
1974
|
24 |
7 |
p. 327-
1 p.
|
artikel
|
| 188 |
1051. The influence of small amounts of nitrogen and carbon on the magnetic after-effect in neutron-irradiated iron. I. Low temperature relaxation
|
|
|
1974
|
24 |
7 |
p. 328-
1 p.
|
artikel
|
| 189 |
978. The influence of space charge on electrical conductivity of Al-Si3N4-Al structures
|
|
|
1974
|
24 |
7 |
p. 323-
1 p.
|
artikel
|
| 190 |
966. The influence of structure on mechanical properties of copper vacuum condensates
|
|
|
1974
|
24 |
7 |
p. 322-
1 p.
|
artikel
|
| 191 |
The influence of substrate temperature on scintillation characteristics of thin film detectors based on CsI(Na) single crystals
|
|
|
1974
|
24 |
7 |
p. 322-
1 p.
|
artikel
|
| 192 |
946. The limiting condition for sparkover in gases forming unstable negative ions
|
|
|
1974
|
24 |
7 |
p. 320-
1 p.
|
artikel
|
| 193 |
1073. Thermal conditions and refining of metals at electron crucibleless zonal melting
|
|
|
1974
|
24 |
7 |
p. 329-
1 p.
|
artikel
|
| 194 |
984. Thermal emf in thin films of the BiSb system
|
|
|
1974
|
24 |
7 |
p. 323-
1 p.
|
artikel
|
| 195 |
982. Thermodynamic approach to diffusion-controlled epitaxial silicon deposition in flow system of SiCl4 + H2 mixtures
|
|
|
1974
|
24 |
7 |
p. 323-
1 p.
|
artikel
|
| 196 |
989. The role of electronic processes in the mechanisms of evaporation and formation of composition of binary semiconductor compounds with ionic bond
|
|
|
1974
|
24 |
7 |
p. 323-
1 p.
|
artikel
|
| 197 |
1098. The role of surface phenomena in the process of sealing ceramics to metals by sealing under pressure
|
|
|
1974
|
24 |
7 |
p. 331-
1 p.
|
artikel
|
| 198 |
952. The structure of vacuum evaporated selenium layers
|
|
|
1974
|
24 |
7 |
p. 321-
1 p.
|
artikel
|
| 199 |
Thin film studies by X-ray fluorescence
|
|
|
1974
|
24 |
7 |
p. 321-
1 p.
|
artikel
|
| 200 |
1015. To the problem of dependence of dark currents of vacuum insulation on residual pressure
|
|
|
1974
|
24 |
7 |
p. 325-
1 p.
|
artikel
|
| 201 |
908. To the problem of difference in composition of charged and neutral particles sputtered by argon ion beam from gallium arsenide
|
|
|
1974
|
24 |
7 |
p. 317-
1 p.
|
artikel
|
| 202 |
963. Utilization of a beam of inert gas ions for local formation of metallic films
|
|
|
1974
|
24 |
7 |
p. 322-
1 p.
|
artikel
|
| 203 |
1095. Utilization of the adhesive VT-200 for low-temperature vacuum-tight seals
|
|
|
1974
|
24 |
7 |
p. 330-
1 p.
|
artikel
|
| 204 |
1088. Utilization of the method of reduction melting in vacuum for determination of oxygen in rare earth elements
|
|
|
1974
|
24 |
7 |
p. 330-
1 p.
|
artikel
|
| 205 |
Vacuum deposition rate measurements on thin polymer films
|
de Wilde, W
|
|
1974
|
24 |
7 |
p. 307-308
2 p.
|
artikel
|
| 206 |
904. Variations in life time of charge carriers in high-resistivity silicon at bombardment by boron and phosphorus ions
|
|
|
1974
|
24 |
7 |
p. 317-
1 p.
|
artikel
|
| 207 |
929. Xenon-133 diffusion and tapping in single-crystal uranium dioxide
|
|
|
1974
|
24 |
7 |
p. 319-
1 p.
|
artikel
|
| 208 |
911. Xenon ion ranges in polycrystalline gold
|
|
|
1974
|
24 |
7 |
p. 317-
1 p.
|
artikel
|
| 209 |
1069. X-ray diffraction investigations of structure of glassy As2Se3 and As2S3
|
|
|
1974
|
24 |
7 |
p. 329-
1 p.
|
artikel
|
| 210 |
1091. X-ray photoelectrons spectra of solid copper compounds. Relation between presence of satellite peaks and state of copper oxidation.
|
|
|
1974
|
24 |
7 |
p. 330-
1 p.
|
artikel
|
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