nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A comparative study of anodized, evaporated and sputtered aluminium oxide thin films
|
|
|
1970 |
9 |
4 |
p. 327- 1 p. |
artikel |
2 |
A CW keyer using digital ICs
|
|
|
1970 |
9 |
4 |
p. 320- 1 p. |
artikel |
3 |
A generalized limit theorem for reliability
|
|
|
1970 |
9 |
4 |
p. 313- 1 p. |
artikel |
4 |
A multichip package utilizing In-Cu flip-chip bonding
|
|
|
1970 |
9 |
4 |
p. 320- 1 p. |
artikel |
5 |
An all-silicon timing circuit for automatic cameras
|
Hart, C.M. |
|
1970 |
9 |
4 |
p. 335-340 6 p. |
artikel |
6 |
An electron imaging system for the fabrication of integrated circuits
|
|
|
1970 |
9 |
4 |
p. 322- 1 p. |
artikel |
7 |
A new etchant for thin films of tantalum and tantalum compounds
|
|
|
1970 |
9 |
4 |
p. 325- 1 p. |
artikel |
8 |
A new production process for thin metal films: High frequency inductive sputtering
|
|
|
1970 |
9 |
4 |
p. 325- 1 p. |
artikel |
9 |
An up-to-date look at thick films
|
|
|
1970 |
9 |
4 |
p. 327- 1 p. |
artikel |
10 |
A perspective on integrated electronics
|
|
|
1970 |
9 |
4 |
p. 317- 1 p. |
artikel |
11 |
Application of error-correcting codes in computer reliability studies
|
|
|
1970 |
9 |
4 |
p. 316- 1 p. |
artikel |
12 |
Application of integrated circuits to industrial control systems with high-noise environments
|
|
|
1970 |
9 |
4 |
p. 320- 1 p. |
artikel |
13 |
A rational approach to integrated circuit process control
|
|
|
1970 |
9 |
4 |
p. 318-319 2 p. |
artikel |
14 |
A survey of chip joining techniques
|
|
|
1970 |
9 |
4 |
p. 318- 1 p. |
artikel |
15 |
Automatic IC tester ICMA checks printed circuits
|
|
|
1970 |
9 |
4 |
p. 315- 1 p. |
artikel |
16 |
A wideband amplitude modulator as a special silicon integrated circuit
|
|
|
1970 |
9 |
4 |
p. 321- 1 p. |
artikel |
17 |
Beam-lead sealed-junction ICs: handling and bonding
|
|
|
1970 |
9 |
4 |
p. 320- 1 p. |
artikel |
18 |
Calendar of International Conferences, Symposia, Lectures and Meetings of Interest
|
|
|
1970 |
9 |
4 |
p. 301-303 3 p. |
artikel |
19 |
Call for papers
|
|
|
1970 |
9 |
4 |
p. 305- 1 p. |
artikel |
20 |
Carrier mobility in silicon MOSTs
|
|
|
1970 |
9 |
4 |
p. 323- 1 p. |
artikel |
21 |
Chemical vapour deposition of silicon dioxide films
|
|
|
1970 |
9 |
4 |
p. 324- 1 p. |
artikel |
22 |
Collector diffusion isolated integrated circuits
|
|
|
1970 |
9 |
4 |
p. 324- 1 p. |
artikel |
23 |
Complementary-MOS low-power, low-voltage integrated binary counter
|
|
|
1970 |
9 |
4 |
p. 321- 1 p. |
artikel |
24 |
Computer assisted mask production
|
|
|
1970 |
9 |
4 |
p. 319- 1 p. |
artikel |
25 |
Conduction of beam deposited electrons through thin SiO2 films
|
|
|
1970 |
9 |
4 |
p. 329- 1 p. |
artikel |
26 |
Continuous vacuum sublimation of silica
|
|
|
1970 |
9 |
4 |
p. 328- 1 p. |
artikel |
27 |
Courses in microelectronics and reliability
|
|
|
1970 |
9 |
4 |
p. 299- 1 p. |
artikel |
28 |
Deflection signal generator for electron beam machines
|
Lindsay, N.M. |
|
1970 |
9 |
4 |
p. 345-346 2 p. |
artikel |
29 |
Design and development of complementary MOS circuits
|
|
|
1970 |
9 |
4 |
p. 318- 1 p. |
artikel |
30 |
Developments in microwave transistors and integrated circuits
|
|
|
1970 |
9 |
4 |
p. 317- 1 p. |
artikel |
31 |
Dielectric isolated integrated circuit substrate processes
|
|
|
1970 |
9 |
4 |
p. 324- 1 p. |
artikel |
32 |
Driving long lines with ICs
|
|
|
1970 |
9 |
4 |
p. 318- 1 p. |
artikel |
33 |
Effects of elastic instability of thin germanium films
|
|
|
1970 |
9 |
4 |
p. 325- 1 p. |
artikel |
34 |
Electron optical techniques of failure investigation
|
|
|
1970 |
9 |
4 |
p. 313- 1 p. |
artikel |
35 |
Encapsulation of integrated circuits
|
|
|
1970 |
9 |
4 |
p. 319-320 2 p. |
artikel |
36 |
Epitaxial growth of titanium thin films
|
|
|
1970 |
9 |
4 |
p. 326- 1 p. |
artikel |
37 |
Expedient method of obtaining interface state properties from MIS conductance measurements
|
|
|
1970 |
9 |
4 |
p. 323- 1 p. |
artikel |
38 |
Face bonding: what does it take?
|
|
|
1970 |
9 |
4 |
p. 318- 1 p. |
artikel |
39 |
Film formation and structural problems
|
|
|
1970 |
9 |
4 |
p. 327- 1 p. |
artikel |
40 |
Film formation and structure-sensitive properties. An introduction
|
|
|
1970 |
9 |
4 |
p. 326- 1 p. |
artikel |
41 |
Flip-chip assembly
|
|
|
1970 |
9 |
4 |
p. 318- 1 p. |
artikel |
42 |
Fluidics—A new control tool
|
|
|
1970 |
9 |
4 |
p. 314- 1 p. |
artikel |
43 |
Formation of multiply-twinned particles in the nucleation stage of film growth
|
|
|
1970 |
9 |
4 |
p. 326- 1 p. |
artikel |
44 |
GaAs, GaP and GaAs x P 1=x epitaxial films grown by molecular beam deposition
|
|
|
1970 |
9 |
4 |
p. 326- 1 p. |
artikel |
45 |
Hall effect measurements on Sb and Ga implanted silicon: Anneal behavior and comparison with other species
|
|
|
1970 |
9 |
4 |
p. 329- 1 p. |
artikel |
46 |
Hazard versus renewal rate of electronic items
|
|
|
1970 |
9 |
4 |
p. 315-316 2 p. |
artikel |
47 |
High value implanted resistors for microcircuits
|
|
|
1970 |
9 |
4 |
p. 328- 1 p. |
artikel |
48 |
Holographic microscopy for the determination of failure mechanisms in monolithic circuits
|
|
|
1970 |
9 |
4 |
p. 314-315 2 p. |
artikel |
49 |
Improved thin-film conductors for microcircuits
|
|
|
1970 |
9 |
4 |
p. 318- 1 p. |
artikel |
50 |
Influence of epitaxial mounds on the yield of integrated circuits
|
|
|
1970 |
9 |
4 |
p. 315- 1 p. |
artikel |
51 |
Initiation à la maintenabilité
|
G.W.A.D, |
|
1970 |
9 |
4 |
p. 331- 1 p. |
artikel |
52 |
Inspection of integrated circuit photomasks with intensity spatial filters
|
|
|
1970 |
9 |
4 |
p. 319- 1 p. |
artikel |
53 |
Integrated circuit manufacturing—circa 1977
|
|
|
1970 |
9 |
4 |
p. 317- 1 p. |
artikel |
54 |
Integrated circuit photomask inspection by spatial filtering
|
|
|
1970 |
9 |
4 |
p. 319- 1 p. |
artikel |
55 |
Inter Nepcon—Assembly and repair of multi-chip modules
|
|
|
1970 |
9 |
4 |
p. 316-317 2 p. |
artikel |
56 |
Joining semiconductor devices with ductile pads
|
|
|
1970 |
9 |
4 |
p. 318- 1 p. |
artikel |
57 |
Kalman filtering and its application to reliability
|
|
|
1970 |
9 |
4 |
p. 313- 1 p. |
artikel |
58 |
Large-scale integration in systems design—Bipolar technology
|
|
|
1970 |
9 |
4 |
p. 317- 1 p. |
artikel |
59 |
Leakage currents of n+p silicon diodes with different amounts of dislocations
|
|
|
1970 |
9 |
4 |
p. 314- 1 p. |
artikel |
60 |
Letters to the editor-in-chief
|
|
|
1970 |
9 |
4 |
p. 297-298 2 p. |
artikel |
61 |
LSI testing is a large-scale headache!
|
|
|
1970 |
9 |
4 |
p. 316- 1 p. |
artikel |
62 |
Management decision utilizing cost-effectiveness modeling
|
|
|
1970 |
9 |
4 |
p. 316- 1 p. |
artikel |
63 |
Measurement standards for integrated circuit processing
|
|
|
1970 |
9 |
4 |
p. 317- 1 p. |
artikel |
64 |
Mechanisms of stress relief in thin films
|
|
|
1970 |
9 |
4 |
p. 326- 1 p. |
artikel |
65 |
Metal problems in plastic encapsulated integrated circuits
|
|
|
1970 |
9 |
4 |
p. 315- 1 p. |
artikel |
66 |
Methoden zur Untersuchung Inhomogener Dotierstoff-Verteilung in Silicium-einkristallen
|
|
|
1970 |
9 |
4 |
p. 322-323 2 p. |
artikel |
67 |
Microcircuit phased-array electronic countermeasures system
|
|
|
1970 |
9 |
4 |
p. 321-322 2 p. |
artikel |
68 |
Microwave integrated circuits for phased-array applications
|
|
|
1970 |
9 |
4 |
p. 321- 1 p. |
artikel |
69 |
Misfit dislocations in the bicrystal system of silicon-boron-doped silicon
|
|
|
1970 |
9 |
4 |
p. 322- 1 p. |
artikel |
70 |
Most versus bipolar I.C.'s
|
van Santen, J.G. |
|
1970 |
9 |
4 |
p. 295-296 2 p. |
artikel |
71 |
Noise in junction- and MOS-FETs at high temperatures
|
|
|
1970 |
9 |
4 |
p. 323- 1 p. |
artikel |
72 |
Notice of Meeting
|
|
|
1970 |
9 |
4 |
p. 307- 1 p. |
artikel |
73 |
Off-the-shelf hybrid IC building blocks make hi-fi stereo amplifier
|
|
|
1970 |
9 |
4 |
p. 321- 1 p. |
artikel |
74 |
On the “excess white noise” in MOS transistors
|
|
|
1970 |
9 |
4 |
p. 323- 1 p. |
artikel |
75 |
On the transport characteristics of a p-n junction with narrow diffused region
|
|
|
1970 |
9 |
4 |
p. 322- 1 p. |
artikel |
76 |
Optimization by integer programming of constrained reliability problems with several modes of failure
|
|
|
1970 |
9 |
4 |
p. 315- 1 p. |
artikel |
77 |
Optimized miniature thin-film planar inductors, compatible with integrated circuits
|
|
|
1970 |
9 |
4 |
p. 325-326 2 p. |
artikel |
78 |
Papers to be published in future issues
|
|
|
1970 |
9 |
4 |
p. 333- 1 p. |
artikel |
79 |
Phosphosilicate glass stabilization of FET devices
|
|
|
1970 |
9 |
4 |
p. 324- 1 p. |
artikel |
80 |
Polishing of silicon by the cupric ion process
|
|
|
1970 |
9 |
4 |
p. 320- 1 p. |
artikel |
81 |
P.R.B. sequence correlator using integrated circuits
|
|
|
1970 |
9 |
4 |
p. 322- 1 p. |
artikel |
82 |
Problems concerning the spatial distribution of deep impurities in semiconductors
|
|
|
1970 |
9 |
4 |
p. 323- 1 p. |
artikel |
83 |
Programming for evaluation of production reliability of electronic equipment
|
|
|
1970 |
9 |
4 |
p. 316- 1 p. |
artikel |
84 |
Pulse trimming of thin-film resistors
|
|
|
1970 |
9 |
4 |
p. 321- 1 p. |
artikel |
85 |
Radiation-hardened ICs
|
|
|
1970 |
9 |
4 |
p. 317- 1 p. |
artikel |
86 |
Recent United Kingdom patent in microelectronics
|
|
|
1970 |
9 |
4 |
p. 309-311 3 p. |
artikel |
87 |
Reliability handbook for silicon monolithic microcircuits. Vol. 3, Failure analysis of monolithic microcircuits
|
|
|
1970 |
9 |
4 |
p. 314- 1 p. |
artikel |
88 |
Reliability handbook for silicon monolithic microcircuits. Vol. 2, Failure mechanisms of monolithic microcircuits
|
|
|
1970 |
9 |
4 |
p. 314- 1 p. |
artikel |
89 |
Resistors—thick and thin
|
|
|
1970 |
9 |
4 |
p. 327- 1 p. |
artikel |
90 |
Review of laser microwelding and micromachining
|
|
|
1970 |
9 |
4 |
p. 328- 1 p. |
artikel |
91 |
Silicon-oxide interface studies by a photoelectric technique
|
|
|
1970 |
9 |
4 |
p. 324- 1 p. |
artikel |
92 |
Some less well-known structure-property relationships in thin films
|
|
|
1970 |
9 |
4 |
p. 327- 1 p. |
artikel |
93 |
Tantalum film circuitry
|
|
|
1970 |
9 |
4 |
p. 325- 1 p. |
artikel |
94 |
Technique used in Hall effect analysis of ion implanted Si and Ge
|
|
|
1970 |
9 |
4 |
p. 329- 1 p. |
artikel |
95 |
Temperature coefficient calculations for monolithic resistors
|
Bhattacharyya, A.B. |
|
1970 |
9 |
4 |
p. 349-355 7 p. |
artikel |
96 |
The applications of film materials and components
|
|
|
1970 |
9 |
4 |
p. 327- 1 p. |
artikel |
97 |
The art of building LSIs
|
|
|
1970 |
9 |
4 |
p. 319- 1 p. |
artikel |
98 |
The built-in voltage of diffused p-n junctions
|
|
|
1970 |
9 |
4 |
p. 323- 1 p. |
artikel |
99 |
The design of multiple-line redundant networks
|
|
|
1970 |
9 |
4 |
p. 316- 1 p. |
artikel |
100 |
The determination of grain misorientation in a thin epitaxial film in the electron microscope
|
|
|
1970 |
9 |
4 |
p. 322- 1 p. |
artikel |
101 |
The distribution of impurities in silicon epitaxial films
|
|
|
1970 |
9 |
4 |
p. 322- 1 p. |
artikel |
102 |
The effect of ionic contaminants on silicon transistor stability
|
|
|
1970 |
9 |
4 |
p. 314- 1 p. |
artikel |
103 |
The impact of policy on system reliability
|
|
|
1970 |
9 |
4 |
p. 313- 1 p. |
artikel |
104 |
The influence of reaction kinetics between BBr3 and O2 on the uniformity of base diffusion
|
|
|
1970 |
9 |
4 |
p. 324-325 2 p. |
artikel |
105 |
The microelectronics laboratory at the Technion
|
|
|
1970 |
9 |
4 |
p. 317- 1 p. |
artikel |
106 |
Theoretical investigations on availabilities of redundant radio relay links
|
|
|
1970 |
9 |
4 |
p. 317- 1 p. |
artikel |
107 |
The properties of nickel in silicon
|
|
|
1970 |
9 |
4 |
p. 323- 1 p. |
artikel |
108 |
The reliability problem
|
|
|
1970 |
9 |
4 |
p. 313-314 2 p. |
artikel |
109 |
Thermal design and packaging of hybrid integrated circuits
|
|
|
1970 |
9 |
4 |
p. 319- 1 p. |
artikel |
110 |
Thermal impedance of ceramic packages using beam-lead IC chips
|
|
|
1970 |
9 |
4 |
p. 320- 1 p. |
artikel |
111 |
The role of solid state in phased-array radars
|
|
|
1970 |
9 |
4 |
p. 321- 1 p. |
artikel |
112 |
The technology of multilayered thick-film circuit arrays
|
|
|
1970 |
9 |
4 |
p. 325- 1 p. |
artikel |
113 |
Thick-film voltage regulator for cars
|
|
|
1970 |
9 |
4 |
p. 328- 1 p. |
artikel |
114 |
Thin-film dielectric materials for microelectronics
|
|
|
1970 |
9 |
4 |
p. 328- 1 p. |
artikel |
115 |
Thin-film silicon: preparation, properties and device applications
|
|
|
1970 |
9 |
4 |
p. 319- 1 p. |
artikel |
116 |
Transfer function sensitivity for discrete and integrated circuits
|
Newcomb, R.W |
|
1970 |
9 |
4 |
p. 341-344 4 p. |
artikel |
117 |
Trap-controlled bunching of electrons in acoustoelectric domains
|
|
|
1970 |
9 |
4 |
p. 324- 1 p. |
artikel |
118 |
Vacuum deposition of dielectric and semiconductor films by a CO2 laser
|
|
|
1970 |
9 |
4 |
p. 328- 1 p. |
artikel |
119 |
Variables affecting weld quality in ultrasonic aluminum wire bonding
|
|
|
1970 |
9 |
4 |
p. 318- 1 p. |
artikel |