nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A compact model for NBTI degradation and recovery under use-profile variations and its application to aging analysis of digital integrated circuits
|
Kleeberger, Veit B. |
|
2014 |
88-90 |
6-7 |
p. 1083-1089 7 p. |
artikel |
2 |
Advanced failure detection techniques in deep submicron CMOS integrated circuits
|
Rubio, Antonio |
|
1999 |
88-90 |
6-7 |
p. 909-918 10 p. |
artikel |
3 |
Ageing of laser crystallized and unhydrogenated polysilicon thin film transistors
|
Rahala, A. |
|
1999 |
88-90 |
6-7 |
p. 851-855 5 p. |
artikel |
4 |
A graph based approach for reliability analysis of nano-scale VLSI logic circuits
|
Vaghef, Vahid Hamiyati |
|
2014 |
88-90 |
6-7 |
p. 1299-1306 8 p. |
artikel |
5 |
Analysis of Harmonic distortion in asymmetric underlap DG-MOSFET with high-k spacer
|
Dutta, Arka |
|
2014 |
88-90 |
6-7 |
p. 1125-1132 8 p. |
artikel |
6 |
Analytical compact modeling and statistical variability study of LDMOS
|
Zhou, Hongtao |
|
2014 |
88-90 |
6-7 |
p. 1096-1102 7 p. |
artikel |
7 |
Analytical solution on interfacial reliability of 3-D through-silicon-via (TSV) containing dielectric liner
|
Ding, Yingtao |
|
2014 |
88-90 |
6-7 |
p. 1384-1391 8 p. |
artikel |
8 |
An area-efficient LDMOS-SCR ESD protection device for the I/O of power IC application
|
Zeng, Jie |
|
2014 |
88-90 |
6-7 |
p. 1173-1178 6 p. |
artikel |
9 |
A new AFM-based tool for testing dielectric quality and reliability on a nanometer scale
|
Olbrich, Alexander |
|
1999 |
88-90 |
6-7 |
p. 941-946 6 p. |
artikel |
10 |
A new bifunctional topography and current probe for scanning force microscope testing of integrated circuits
|
Bae, S. |
|
1999 |
88-90 |
6-7 |
p. 975-980 6 p. |
artikel |
11 |
An investigation on capacitance-trigger ESD protection devices for high voltage integrated circuits
|
Liang, Hailian |
|
2014 |
88-90 |
6-7 |
p. 1169-1172 4 p. |
artikel |
12 |
A polymer based miniature loop heat pipe with silicon substrate and temperature sensors for high brightness light-emitting diodes
|
Ye, Huaiyu |
|
2014 |
88-90 |
6-7 |
p. 1355-1362 8 p. |
artikel |
13 |
A review: On the development of low melting temperature Pb-free solders
|
Kotadia, Hiren R. |
|
2014 |
88-90 |
6-7 |
p. 1253-1273 21 p. |
artikel |
14 |
A simpler method for life-testing laser diodes
|
Vanzi, M. |
|
1999 |
88-90 |
6-7 |
p. 1067-1071 5 p. |
artikel |
15 |
Assessment of worst case dielectric failure rate based on statistical samples with pure intrinsic failure distributions
|
Kerber, Martin |
|
1999 |
88-90 |
6-7 |
p. 755-758 4 p. |
artikel |
16 |
A stochastic approach to failure analysis in electromigration phenomena
|
Pennetta, C. |
|
1999 |
88-90 |
6-7 |
p. 857-862 6 p. |
artikel |
17 |
A universal reliability prediction model for SMD integrated circuits based on field failures
|
Kervarrec, G. |
|
1999 |
88-90 |
6-7 |
p. 765-771 7 p. |
artikel |
18 |
Author index
|
|
|
1999 |
88-90 |
6-7 |
p. I-II nvt p. |
artikel |
19 |
Case studies of defect localization based on software-based fault diagnosis in comparison with PEMS/OBIRCH analysis
|
Naoe, Takuya |
|
2014 |
88-90 |
6-7 |
p. 1433-1442 10 p. |
artikel |
20 |
Cathodoluminescence from hot electron stressed InP HEMTs
|
Cova, Paolo |
|
1999 |
88-90 |
6-7 |
p. 1073-1078 6 p. |
artikel |
21 |
Chip-Package Interaction in 3D stacked IC packages using Finite Element Modelling
|
Vandevelde, Bart |
|
2014 |
88-90 |
6-7 |
p. 1200-1205 6 p. |
artikel |
22 |
Computational modeling of creep-based fatigue as a means of selecting lead-free solder alloys
|
Eckermann, J. |
|
2014 |
88-90 |
6-7 |
p. 1235-1242 8 p. |
artikel |
23 |
Contact resistance anomalies of vias before breakdown in accelerated current life tests
|
Gölz, W.L.F. |
|
1999 |
88-90 |
6-7 |
p. 1109-1112 4 p. |
artikel |
24 |
Cross-section analysis of electric devices by scanning capacitance microscope
|
Takasaki, Yoichi |
|
1999 |
88-90 |
6-7 |
p. 987-990 4 p. |
artikel |
25 |
Damage analysis in smart-power technology electrostatic discharge (ESD) protection devices
|
Pogany, D. |
|
1999 |
88-90 |
6-7 |
p. 1143-1148 6 p. |
artikel |
26 |
Defect localization using voltage contrast IDDQ testing
|
Perdu, Philippe |
|
1999 |
88-90 |
6-7 |
p. 1021-1026 6 p. |
artikel |
27 |
Degradation of AlGaAs GaAs power HFET's under on-state and off-state breakdown conditions
|
Dieci, D. |
|
1999 |
88-90 |
6-7 |
p. 1055-1060 6 p. |
artikel |
28 |
Depassivation of latent plasma damage in pMOS devices
|
Pantisano, L. |
|
1999 |
88-90 |
6-7 |
p. 827-832 6 p. |
artikel |
29 |
Design-in-reliability: From library modeling and optimization to gate-level verification
|
Jain, Palkesh |
|
2014 |
88-90 |
6-7 |
p. 1421-1432 12 p. |
artikel |
30 |
Device characteristics of AlGaN/GaN MIS–HEMTs with high-k Hf x Zr1 − x O2 (x =0.66,0.47,0.15) insulator layer
|
Chiu, Hsien-Chin |
|
2014 |
88-90 |
6-7 |
p. 1282-1287 6 p. |
artikel |
31 |
Device reliability and robust power converter development
|
Keskar, N. |
|
1999 |
88-90 |
6-7 |
p. 1121-1130 10 p. |
artikel |
32 |
2D physical simulation of degradation on transistors induced by FIB exposure of dielectric passivation
|
Benbrik, J. |
|
1999 |
88-90 |
6-7 |
p. 1027-1031 5 p. |
artikel |
33 |
Editorial
|
Labat, Nathalie |
|
1999 |
88-90 |
6-7 |
p. ix-x nvt p. |
artikel |
34 |
Effects of RF life-test on LF electrical parameters of GaAs power MESFETs
|
Saysset-Malbert, N. |
|
1999 |
88-90 |
6-7 |
p. 1061-1066 6 p. |
artikel |
35 |
Electron Beam Testing of FPGA Circuits
|
Desplats, R. |
|
1999 |
88-90 |
6-7 |
p. 963-968 6 p. |
artikel |
36 |
Enhancing IC repairs by combining laser direct-writing of Cu and FIB techniques
|
Remes, J. |
|
1999 |
88-90 |
6-7 |
p. 997-1001 5 p. |
artikel |
37 |
ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements
|
Meneghini, Matteo |
|
2014 |
88-90 |
6-7 |
p. 1143-1149 7 p. |
artikel |
38 |
Evaluation of P-HEMT MMIC technology PH25 for space applications
|
Huguet, P. |
|
1999 |
88-90 |
6-7 |
p. 1049-1054 6 p. |
artikel |
39 |
Extended SPICE-like model accounting for layout effects on snapback phenomenon during ESD events
|
Salome, P. |
|
1999 |
88-90 |
6-7 |
p. 833-838 6 p. |
artikel |
40 |
Extraction and evolution of Fowler-Nordheim tunneling parameters of thin gate oxides under EEPROM-like dynamic degradation
|
Croci, S. |
|
1999 |
88-90 |
6-7 |
p. 879-884 6 p. |
artikel |
41 |
Fabrication and application of temperature triggered MEMS switch for active cooling control in Solid State Lighting system
|
Ye, Huaiyu |
|
2014 |
88-90 |
6-7 |
p. 1338-1343 6 p. |
artikel |
42 |
Failure analysis method by using different wavelengths lasers and its application
|
Ito, Seigo |
|
1999 |
88-90 |
6-7 |
p. 1015-1020 6 p. |
artikel |
43 |
Fault localisation in ICs by goniometric laser probing of thermal induced surface waves
|
Dilhaire, S. |
|
1999 |
88-90 |
6-7 |
p. 919-923 5 p. |
artikel |
44 |
FIB voltage contrast measurement for enhanced circuit repairs
|
Desplats, Romain |
|
1999 |
88-90 |
6-7 |
p. 1003-1008 6 p. |
artikel |
45 |
Flexible stop and double-cascaded stop to improve shock reliability of MEMS accelerometer
|
Tao, Yong-Kang |
|
2014 |
88-90 |
6-7 |
p. 1328-1337 10 p. |
artikel |
46 |
FLIP-chip and “backside” techniques
|
Barton, D.L. |
|
1999 |
88-90 |
6-7 |
p. 721-730 10 p. |
artikel |
47 |
1 f Noise in conductive adhesive bonds under mechanical stress as a sensitive and fast diagnostic tool for reliability assessment
|
Vandamme, L.K.J. |
|
1999 |
88-90 |
6-7 |
p. 1089-1094 6 p. |
artikel |
48 |
Front- and backside investigations of thermal and electronic properties of semiconducting devices
|
Fiege, G.B.M. |
|
1999 |
88-90 |
6-7 |
p. 937-940 4 p. |
artikel |
49 |
Geometry optimization of a Lorentz force, resonating MEMS magnetometer
|
Bagherinia, M. |
|
2014 |
88-90 |
6-7 |
p. 1192-1199 8 p. |
artikel |
50 |
Gold removal in failure analysis of GaAs-based laser diodes
|
Vanzi, M. |
|
1999 |
88-90 |
6-7 |
p. 1043-1047 5 p. |
artikel |
51 |
Guest Editorial: 2013 EuroSimE International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems
|
Wymysłowski, Artur |
|
2014 |
88-90 |
6-7 |
p. 1179-1181 3 p. |
artikel |
52 |
HBM and TLP ESD robustness in smart-power protection structures
|
Santirosia, S. |
|
1999 |
88-90 |
6-7 |
p. 839-844 6 p. |
artikel |
53 |
Hot-hole-induced interface states build-up on deep-submicrometer LDD nMOSFETs
|
Rafí, J.M. |
|
1999 |
88-90 |
6-7 |
p. 869-874 6 p. |
artikel |
54 |
Impact of FEM simulation on reliability improvement of packaging
|
Weide, Kirsten |
|
1999 |
88-90 |
6-7 |
p. 1079-1088 10 p. |
artikel |
55 |
Improved device variability in scaled MOSFETs with deeply retrograde channel profile
|
Woo, Jason |
|
2014 |
88-90 |
6-7 |
p. 1090-1095 6 p. |
artikel |
56 |
Improved SRAM failure diagnosis for process monitoring via current signature analysis
|
Schienle, M. |
|
1999 |
88-90 |
6-7 |
p. 1009-1014 6 p. |
artikel |
57 |
Improving the reliability of electronic paper display using FMEA and Taguchi methods: A case study
|
Su, Chao-Ton |
|
2014 |
88-90 |
6-7 |
p. 1369-1377 9 p. |
artikel |
58 |
Influence of bias humidity testing and application on time-dependent, Arrhenius-law-based stability predictions for thin film resistors
|
Kuehl, Reiner W. |
|
2014 |
88-90 |
6-7 |
p. 1316-1327 12 p. |
artikel |
59 |
Influence of pulsed DC current stress on electromigration results in AlCu interconnections; analysis of thermal and healing effects
|
Arnaud, L. |
|
1999 |
88-90 |
6-7 |
p. 773-784 12 p. |
artikel |
60 |
Inside front cover - Editorial board
|
|
|
2014 |
88-90 |
6-7 |
p. IFC- 1 p. |
artikel |
61 |
Junction parameters for silicon devices characterization
|
de la Bardonnie, M. |
|
1999 |
88-90 |
6-7 |
p. 751-753 3 p. |
artikel |
62 |
Laser beam backside probing of CMOS integrated circuits
|
Kasapi, Steven |
|
1999 |
88-90 |
6-7 |
p. 957-961 5 p. |
artikel |
63 |
Laser interferometric method for ns-time scale thermal mapping of Smart Power ESD protection devices during ESD stress
|
Fürböck, C. |
|
1999 |
88-90 |
6-7 |
p. 925-930 6 p. |
artikel |
64 |
Leakage current variation during two different modes of electrical stressing in undoped hydrogenated n-channel polysilicon thin film transistors (TFTs)
|
Farmakis, F.V. |
|
1999 |
88-90 |
6-7 |
p. 885-889 5 p. |
artikel |
65 |
Lifetime extrapolation for IGBT modules under realistic operation conditions
|
Ciappa, M. |
|
1999 |
88-90 |
6-7 |
p. 1131-1136 6 p. |
artikel |
66 |
Localization of defects in die-attach assembly by continuous wavelet transform using scanning acoustic microscopy
|
Bechou, L. |
|
1999 |
88-90 |
6-7 |
p. 1095-1101 7 p. |
artikel |
67 |
Long term reliability testing of HV-IGBT modules in worst case traction operation
|
Fratelli, L. |
|
1999 |
88-90 |
6-7 |
p. 1137-1142 6 p. |
artikel |
68 |
Mechanical and corrosion resistances of a Sn–0.7wt.%Cu lead-free solder alloy
|
Freitas, Emmanuelle S. |
|
2014 |
88-90 |
6-7 |
p. 1392-1400 9 p. |
artikel |
69 |
Mercury-probe characterisation of soft breakdown: effect of oxide thickness and measurement set-up
|
Cacciato, A. |
|
1999 |
88-90 |
6-7 |
p. 903-907 5 p. |
artikel |
70 |
Methodology of reliability enhancement for high power LED driver
|
Lan, Song |
|
2014 |
88-90 |
6-7 |
p. 1150-1159 10 p. |
artikel |
71 |
Model for the oxide thickness dependence of SILC generation based on anode hole injection process
|
Jahan, C. |
|
1999 |
88-90 |
6-7 |
p. 791-795 5 p. |
artikel |
72 |
Model-independent determination of the degradation dynamics of thin SiO2 films
|
Rodríguez, R. |
|
1999 |
88-90 |
6-7 |
p. 891-895 5 p. |
artikel |
73 |
Modeling and analysis of gate-all-around silicon nanowire FET
|
Chen, Xiangchen |
|
2014 |
88-90 |
6-7 |
p. 1103-1108 6 p. |
artikel |
74 |
Modelling hot-carrier degradation of LDD NMOSFETs by using a high-resolution measurement technique
|
Dreesen, R. |
|
1999 |
88-90 |
6-7 |
p. 785-790 6 p. |
artikel |
75 |
Modelling of the temperature and electric field dependence of substrate/gate current SILC with an elastic resonant trap assisted tunnelling mechanism
|
iess, P. |
|
1999 |
88-90 |
6-7 |
p. 803-807 5 p. |
artikel |
76 |
Monitoring of aging in integrated circuits by identifying possible critical paths
|
Lorenz, Dominik |
|
2014 |
88-90 |
6-7 |
p. 1075-1082 8 p. |
artikel |
77 |
Multi-physics reliability simulation for solid state lighting drivers
|
Tarashioon, S. |
|
2014 |
88-90 |
6-7 |
p. 1212-1222 11 p. |
artikel |
78 |
Multi-physics simulations for combined temperature/humidity loading of potted electronic assemblies
|
Parsa, Ehsan |
|
2014 |
88-90 |
6-7 |
p. 1182-1191 10 p. |
artikel |
79 |
New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100nm scale unpassivated regions around the gate periphery
|
Ivo, Ponky |
|
2014 |
88-90 |
6-7 |
p. 1288-1292 5 p. |
artikel |
80 |
New latchup mechanism in complementary bipolar power ICs triggered by backside die attach Glue
|
van der Pol, J.A. |
|
1999 |
88-90 |
6-7 |
p. 863-868 6 p. |
artikel |
81 |
New rapid method for lifetime determination of gate oxide validated with bipolar/CMOS/DMOS technology
|
Gagnard, X. |
|
1999 |
88-90 |
6-7 |
p. 759-763 5 p. |
artikel |
82 |
New tools for yield improvement in integrated circuit manufacturing: can they be applied to reliability?
|
McDonald, Chris J |
|
1999 |
88-90 |
6-7 |
p. 731-739 9 p. |
artikel |
83 |
On the crack and delamination risk optimization of a Si-interposer for LED packaging
|
Auersperg, J. |
|
2014 |
88-90 |
6-7 |
p. 1223-1227 5 p. |
artikel |
84 |
On the current conduction mechanisms of CeO2/La2O3 stacked gate dielectric
|
Feng, Xuan |
|
2014 |
88-90 |
6-7 |
p. 1133-1136 4 p. |
artikel |
85 |
Optical method for the measurement of the thermomechanical behaviour of electronic devices
|
Dilhaire, S. |
|
1999 |
88-90 |
6-7 |
p. 981-985 5 p. |
artikel |
86 |
Oxygen vacancy formation and the induced defect states in HfO2 and Hf-silicates – A first principles hybrid functional study
|
Chen, Tsung-Ju |
|
2014 |
88-90 |
6-7 |
p. 1119-1124 6 p. |
artikel |
87 |
Physical limits and lifetime limitations of semiconductor devices at high temperatures
|
Wondrak, W. |
|
1999 |
88-90 |
6-7 |
p. 1113-1120 8 p. |
artikel |
88 |
Physics of degradation in GaAs-based heterojunction bipolar transistors
|
Henderson, T. |
|
1999 |
88-90 |
6-7 |
p. 1033-1042 10 p. |
artikel |
89 |
Planar copper-tin inter-metallic film formation on strained substrates
|
Hsu, Feng-Chih |
|
2014 |
88-90 |
6-7 |
p. 1378-1383 6 p. |
artikel |
90 |
Power cycling on press-pack IGBTs: measurements and thermomechanical simulation
|
Cova, Paolo |
|
1999 |
88-90 |
6-7 |
p. 1165-1170 6 p. |
artikel |
91 |
Predicting bond failure after 1.5ms of bonding, an initial study
|
Tietäväinen, Aino |
|
2014 |
88-90 |
6-7 |
p. 1452-1454 3 p. |
artikel |
92 |
Prediction of processing maps for transient liquid phase diffusion bonding of Cu/Sn/Cu joints in microelectronics packaging
|
Park, M.S. |
|
2014 |
88-90 |
6-7 |
p. 1401-1411 11 p. |
artikel |
93 |
Quality and mechanical reliability assessment of wafer-bonded micromechanical components
|
Petzold, M. |
|
1999 |
88-90 |
6-7 |
p. 1103-1108 6 p. |
artikel |
94 |
Quantitative high frequency-electric force microscope testing of monolithic microwave integrated circuits at 20 GHz
|
Wittpahl, V. |
|
1999 |
88-90 |
6-7 |
p. 951-956 6 p. |
artikel |
95 |
Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT modules
|
Hamidi, A. |
|
1999 |
88-90 |
6-7 |
p. 1153-1158 6 p. |
artikel |
96 |
Reliability assessment of a MEMS microphone under mixed flowing gas environment and shock impact loading
|
Li, Jue |
|
2014 |
88-90 |
6-7 |
p. 1228-1234 7 p. |
artikel |
97 |
Reliability improvement of EEPROM by using WSi2 polycide gate
|
Ogier-Monnier, K. |
|
1999 |
88-90 |
6-7 |
p. 897-901 5 p. |
artikel |
98 |
Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress
|
Chen, Wei-Wei |
|
2014 |
88-90 |
6-7 |
p. 1293-1298 6 p. |
artikel |
99 |
Reliability of AlN substrates and their solder joints in IGBT power modules
|
Mitic, G. |
|
1999 |
88-90 |
6-7 |
p. 1159-1164 6 p. |
artikel |
100 |
Reliability versus yield and die location in advanced VLSI
|
Riordan, W.C. |
|
1999 |
88-90 |
6-7 |
p. 741-749 9 p. |
artikel |
101 |
Resilience Articulation Point (RAP): Cross-layer dependability modeling for nanometer system-on-chip resilience
|
Herkersdorf, Andreas |
|
2014 |
88-90 |
6-7 |
p. 1066-1074 9 p. |
artikel |
102 |
Robustness measurement of integrated circuits and its adaptation to aging effects
|
Barke, Martin |
|
2014 |
88-90 |
6-7 |
p. 1058-1065 8 p. |
artikel |
103 |
Self-repairing adder using fault localization
|
Akbar, Muhammad Ali |
|
2014 |
88-90 |
6-7 |
p. 1443-1451 9 p. |
artikel |
104 |
Simulation and measurement of the flip chip solder bumps with a Cu-plated plastic core
|
Weide-Zaage, K. |
|
2014 |
88-90 |
6-7 |
p. 1206-1211 6 p. |
artikel |
105 |
Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology
|
Tam, Wing-Shan |
|
2014 |
88-90 |
6-7 |
p. 1163-1168 6 p. |
artikel |
106 |
Soft error estimation and mitigation of digital circuits by characterizing input patterns of logic gates
|
Rezaei, Siavash |
|
2014 |
88-90 |
6-7 |
p. 1412-1420 9 p. |
artikel |
107 |
Special section reliability and variability of devices for circuits and systems
|
Asenov, Asen |
|
2014 |
88-90 |
6-7 |
p. 1057- 1 p. |
artikel |
108 |
Stacked zener trigger SCR for HV IC ESD protection
|
Dong, Shurong |
|
2014 |
88-90 |
6-7 |
p. 1160-1162 3 p. |
artikel |
109 |
Stress impact of moisture diffusion measured with the stress chip
|
Schindler-Saefkow, F. |
|
2014 |
88-90 |
6-7 |
p. 1243-1252 10 p. |
artikel |
110 |
Study of body and oxide thickness variation on analog and RF performance of underlap DG-MOSFETs
|
Pati, Sudhansu Kumar |
|
2014 |
88-90 |
6-7 |
p. 1137-1142 6 p. |
artikel |
111 |
Study of stress induced leakage current by using high resolution measurements
|
De Salvo, B. |
|
1999 |
88-90 |
6-7 |
p. 797-802 6 p. |
artikel |
112 |
Sub-surface analyses of defects in integrated devices by scanning probe acoustic microscopy
|
Cramer, R.M. |
|
1999 |
88-90 |
6-7 |
p. 947-950 4 p. |
artikel |
113 |
Subthreshold behavior models for short-channel junctionless tri-material cylindrical surrounding-gate MOSFET
|
Li, Cong |
|
2014 |
88-90 |
6-7 |
p. 1274-1281 8 p. |
artikel |
114 |
Temperature acceleration of breakdown and quasi-breakdown phenomena in ultra-thin oxides
|
Bruyère, S. |
|
1999 |
88-90 |
6-7 |
p. 815-820 6 p. |
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