nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Accurate determination of composition and bonding probabilities in plasma enhanced chemical vapour deposition amorphous silicon oxide
|
Moreno, J.A |
|
2000 |
88-90 |
4-5 |
p. 609-612 4 p. |
artikel |
2 |
Accurate determination of flat band voltage in advanced MOS structure
|
Leroux, Charles |
|
2007 |
88-90 |
4-5 |
p. 660-664 5 p. |
artikel |
3 |
Amorphous silicon technology for large area digital X-ray and optical imaging
|
Nathan, Arokia |
|
2002 |
88-90 |
4-5 |
p. 735-746 12 p. |
artikel |
4 |
Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study
|
Kaczer, B. |
|
2002 |
88-90 |
4-5 |
p. 555-564 10 p. |
artikel |
5 |
A new MOD method to prepare Sr0.7Bi2.2Ta2O9 ferroelectric films for non-volatile RAM memories
|
Tejedor, P |
|
2000 |
88-90 |
4-5 |
p. 683-686 4 p. |
artikel |
6 |
An investigation of surface state capture cross-sections for metal–oxide–semiconductor field-effect transistors using HfO2 gate dielectrics
|
Chiu, Fu-Chien |
|
2007 |
88-90 |
4-5 |
p. 548-551 4 p. |
artikel |
7 |
Annealing effects in the PECVD SiO2 thin films deposited using TEOS, Ar and O2 mixture
|
Viana, C.E |
|
2000 |
88-90 |
4-5 |
p. 613-616 4 p. |
artikel |
8 |
Anodic passivation of SiGe
|
Rappich, J |
|
2000 |
88-90 |
4-5 |
p. 825-827 3 p. |
artikel |
9 |
A novel method for the deposition of Si–SiO2 superlattices
|
Gourbilleau, F |
|
2000 |
88-90 |
4-5 |
p. 889-892 4 p. |
artikel |
10 |
Application of adhesive bonding techniques in hard disk drive head assembly
|
Luk, C.F. |
|
2002 |
88-90 |
4-5 |
p. 767-777 11 p. |
artikel |
11 |
Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon
|
Grekhov, I.V. |
|
2007 |
88-90 |
4-5 |
p. 669-672 4 p. |
artikel |
12 |
A recombination model for transient and stationary stress-induced leakage current
|
Ielmini, D |
|
2000 |
88-90 |
4-5 |
p. 703-706 4 p. |
artikel |
13 |
A review of recent MOSFET threshold voltage extraction methods
|
Ortiz-Conde, A. |
|
2002 |
88-90 |
4-5 |
p. 583-596 14 p. |
artikel |
14 |
A software for optical characterization of thin films for microelectronic applications
|
Leinfellner, N |
|
2000 |
88-90 |
4-5 |
p. 873-875 3 p. |
artikel |
15 |
Assessing oxide reliability targets with fast WLR measurements
|
Martin, Andreas |
|
2000 |
88-90 |
4-5 |
p. 731-734 4 p. |
artikel |
16 |
A thermodynamic limit for digital electronics
|
De Mey, Gilbert |
|
2002 |
88-90 |
4-5 |
p. 507-510 4 p. |
artikel |
17 |
Atomically smooth ultrathin oxide on Si(113)
|
Müssig, H.-J |
|
2000 |
88-90 |
4-5 |
p. 577-579 3 p. |
artikel |
18 |
Boron penetration effect on gate oxide reliability of 50 Å PMOS devices
|
Kyono, Carl |
|
2000 |
88-90 |
4-5 |
p. 637-640 4 p. |
artikel |
19 |
Calculation of direct tunneling gate current through ultra-thin oxide and oxide/nitride stacks in MOSFETs and H-MOSFETs
|
Cassan, E |
|
2000 |
88-90 |
4-5 |
p. 585-588 4 p. |
artikel |
20 |
Capacitance–Voltage (C–V) characterization of 20 Å thick gate oxide: parameter extraction and modeling
|
Clerc, R |
|
2000 |
88-90 |
4-5 |
p. 571-575 5 p. |
artikel |
21 |
Carrier trapping in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices
|
Currò, Giuseppe |
|
2007 |
88-90 |
4-5 |
p. 798-801 4 p. |
artikel |
22 |
Cell array structure test in EEPROM reliability assessment at an early process development stage
|
Pio, F |
|
2000 |
88-90 |
4-5 |
p. 719-722 4 p. |
artikel |
23 |
Channel distribution of generated interface states in 0.35 μm LDD nMOSFET
|
Buiu, O. |
|
2000 |
88-90 |
4-5 |
p. 727-730 4 p. |
artikel |
24 |
Channel hot carrier effects in n-MOSFET devices of advanced submicron CMOS technologies
|
La Rosa, Giuseppe |
|
2007 |
88-90 |
4-5 |
p. 552-558 7 p. |
artikel |
25 |
Characteristic photoluminescence band in Si+-implanted SiO2 grown on Si wafer
|
Iwayama, T.S. |
|
2000 |
88-90 |
4-5 |
p. 849-854 6 p. |
artikel |
26 |
Characteristics of MIS capacitors based on multilayer TiO2–Ta2O5 structures
|
Mikhelashvili, V |
|
2000 |
88-90 |
4-5 |
p. 657-658 2 p. |
artikel |
27 |
Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C–V technique
|
Puzzilli, Giuseppina |
|
2007 |
88-90 |
4-5 |
p. 508-512 5 p. |
artikel |
28 |
Characterization of NH3 plasma-treated Ba0.7Sr0.3TiO3 thin films
|
Wuu, D.S |
|
2000 |
88-90 |
4-5 |
p. 663-666 4 p. |
artikel |
29 |
Characterizations of high resistivity TiN x O y thin films for applications in thin film resistors
|
Cuong, Nguyen Duy |
|
2007 |
88-90 |
4-5 |
p. 752-754 3 p. |
artikel |
30 |
Charge accumulation in the dielectric of the nanocluster NVM MOS structures under anti- and unipolar W/E window formation
|
Turchanikov, V. |
|
2007 |
88-90 |
4-5 |
p. 626-630 5 p. |
artikel |
31 |
Charge trapping and interface states in hydrogen annealed HfO2–Si structures
|
Gomeniuk, Y.V. |
|
2007 |
88-90 |
4-5 |
p. 714-717 4 p. |
artikel |
32 |
Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperatures
|
Tyagulskyy, I.P. |
|
2007 |
88-90 |
4-5 |
p. 726-728 3 p. |
artikel |
33 |
Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors
|
Lemberger, M. |
|
2007 |
88-90 |
4-5 |
p. 635-639 5 p. |
artikel |
34 |
Comparison of deposition models for a TEOS LPCVD process
|
Holzer, Stefan |
|
2007 |
88-90 |
4-5 |
p. 623-625 3 p. |
artikel |
35 |
Comparison of oxide leakage currents induced by ion implantation and high field electric stress
|
Goguenheim, D |
|
2000 |
88-90 |
4-5 |
p. 751-754 4 p. |
artikel |
36 |
Conduction properties of breakdown paths in ultrathin gate oxides
|
Miranda, E |
|
2000 |
88-90 |
4-5 |
p. 687-690 4 p. |
artikel |
37 |
Construction of a cost-effective failure analysis service network––microelectronic failure analysis service in Japan
|
Nakajima, S |
|
2002 |
88-90 |
4-5 |
p. 511-521 11 p. |
artikel |
38 |
Correlation between infrared transmission spectra and the interface trap density of SiO2 films
|
Vamvakas, V.Em. |
|
2007 |
88-90 |
4-5 |
p. 834-837 4 p. |
artikel |
39 |
Defects induced anomalous breakdown kinetics in Pr2O3 by micro- and nano-characterization
|
Fiorenza, P. |
|
2007 |
88-90 |
4-5 |
p. 640-644 5 p. |
artikel |
40 |
Defects in silicon oxynitride gate dielectric films
|
Wong, Hei |
|
2002 |
88-90 |
4-5 |
p. 597-605 9 p. |
artikel |
41 |
Degradation kinetics of ultrathin HfO2 layers on Si(100) during vacuum annealing monitored with in situ XPS/LEIS and ex situ AFM
|
Zenkevich, A. |
|
2007 |
88-90 |
4-5 |
p. 657-659 3 p. |
artikel |
42 |
Density functional theory of high-k dielectric gate stacks
|
Demkov, Alexander A. |
|
2007 |
88-90 |
4-5 |
p. 686-693 8 p. |
artikel |
43 |
Determination of the electrical properties of thermally grown ultrathin nitride films
|
Pic, N |
|
2000 |
88-90 |
4-5 |
p. 589-592 4 p. |
artikel |
44 |
Development of a permittivity extraction method for ultra low k dielectrics integrated in advanced interconnects
|
Cueto, O. |
|
2007 |
88-90 |
4-5 |
p. 769-772 4 p. |
artikel |
45 |
Development of embedded capacitor with bismuth-based pyrochlore thin films at low temperatures for printed circuit board applications
|
Park, Jong-Hyun |
|
2007 |
88-90 |
4-5 |
p. 755-758 4 p. |
artikel |
46 |
Dielectric and photoluminescence properties of silicon nanoparticles embedded in a silica matrix
|
Charvet, S |
|
2000 |
88-90 |
4-5 |
p. 855-858 4 p. |
artikel |
47 |
Dielectric thin films for MEMS-based optical sensors
|
Martyniuk, M. |
|
2007 |
88-90 |
4-5 |
p. 733-738 6 p. |
artikel |
48 |
Distribution and generation of traps in SiO2/Al2O3 gate stacks
|
Crupi, Isodiana |
|
2007 |
88-90 |
4-5 |
p. 525-527 3 p. |
artikel |
49 |
DRAM reliability
|
Kim, Kinam |
|
2002 |
88-90 |
4-5 |
p. 543-553 11 p. |
artikel |
50 |
Effective work function of NiSi/HfO2 gate stacks measured with X-ray photoelectron spectroscopy
|
Lebedinskii, Yu.Yu. |
|
2007 |
88-90 |
4-5 |
p. 649-652 4 p. |
artikel |
51 |
Effect of implantation and annealing conditions on the photoluminescence emission of Si nanocrystals ion beam synthesised in SiO2
|
Lopez, M |
|
2000 |
88-90 |
4-5 |
p. 859-862 4 p. |
artikel |
52 |
Effect of macrostructure and composition of the top metal electrode on properties of MIS gas sensors
|
Litovchenko, V.G |
|
2000 |
88-90 |
4-5 |
p. 821-824 4 p. |
artikel |
53 |
Effect of oxide breakdown on RS latches
|
Fernández, R. |
|
2007 |
88-90 |
4-5 |
p. 581-584 4 p. |
artikel |
54 |
Effect of oxide–semiconductor interface traps on low-temperature operation of MOSFETs
|
Lysenko, V.S |
|
2000 |
88-90 |
4-5 |
p. 735-738 4 p. |
artikel |
55 |
Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors
|
Lysenko, V.S |
|
2000 |
88-90 |
4-5 |
p. 799-802 4 p. |
artikel |
56 |
Effects of fluorine-implanted treatment on Ba0.7Sr0.3TiO3 films
|
Horng, R.H |
|
2000 |
88-90 |
4-5 |
p. 667-670 4 p. |
artikel |
57 |
Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs
|
Stojadinovic, N. |
|
2002 |
88-90 |
4-5 |
p. 669-677 9 p. |
artikel |
58 |
Effects of hydrogen transport and reactions on microelectronics radiation response and reliability
|
Fleetwood, D.M. |
|
2002 |
88-90 |
4-5 |
p. 523-541 19 p. |
artikel |
59 |
Effects of O2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 thin films
|
Leu, Ching-Chich |
|
2000 |
88-90 |
4-5 |
p. 679-682 4 p. |
artikel |
60 |
Electrical and structural investigations in reliability characterisation of modern passives and passive integrated components
|
Dziedzic, Andrzej |
|
2002 |
88-90 |
4-5 |
p. 709-719 11 p. |
artikel |
61 |
Electrical and structural properties of hafnium silicate thin films
|
Mitrovic, I.Z. |
|
2007 |
88-90 |
4-5 |
p. 645-648 4 p. |
artikel |
62 |
Electrical characterisation of oxides grown in different RTP ambients
|
Brazzelli, D |
|
2000 |
88-90 |
4-5 |
p. 641-644 4 p. |
artikel |
63 |
Electrical characterisation of Si3N4/SiO2 double layers on p-type 6H–SiC
|
Berberich, S |
|
2000 |
88-90 |
4-5 |
p. 833-836 4 p. |
artikel |
64 |
Electrical characteristics of anodic tantalum pentoxide thin films under thermal stress
|
Dueñas, S |
|
2000 |
88-90 |
4-5 |
p. 659-662 4 p. |
artikel |
65 |
Electrical characterization and analysis techniques for the high-κ era
|
Young, Chadwin D. |
|
2007 |
88-90 |
4-5 |
p. 479-488 10 p. |
artikel |
66 |
Electrical characterization of crystalline Gd2O3 gate dielectric MOSFETs fabricated by damascene metal gate technology
|
Endres, Ralf |
|
2007 |
88-90 |
4-5 |
p. 528-531 4 p. |
artikel |
67 |
Electrical characterization of low permittivity materials for ULSI inter-metal-insulation
|
Cluzel, J |
|
2000 |
88-90 |
4-5 |
p. 675-678 4 p. |
artikel |
68 |
Electrical characterization of metal-oxide-high-k dielectric-oxide-semiconductor (MOHOS) structures for memory applications
|
Hsu, Hsin-hao |
|
2007 |
88-90 |
4-5 |
p. 606-609 4 p. |
artikel |
69 |
Electrical noise and RTS fluctuations in advanced CMOS devices
|
Ghibaudo, G. |
|
2002 |
88-90 |
4-5 |
p. 573-582 10 p. |
artikel |
70 |
Enhancing reliability with thermal transient testing
|
Székely, V. |
|
2002 |
88-90 |
4-5 |
p. 629-640 12 p. |
artikel |
71 |
Epitaxial ferroelectric PbZr x Ti1– x O3 thin films for non-volatile memory applications
|
Guerrero, C |
|
2000 |
88-90 |
4-5 |
p. 671-674 4 p. |
artikel |
72 |
Epitaxial growth of LaAlO3 on Si(001) using interface engineering
|
Merckling, C. |
|
2007 |
88-90 |
4-5 |
p. 540-543 4 p. |
artikel |
73 |
Evaluation of the generation mechanisms at surface and in the bulk of the silicon by current transient technique
|
Barletta, Giacomo |
|
2007 |
88-90 |
4-5 |
p. 810-814 5 p. |
artikel |
74 |
Experimental observations of temperature-dependent flat band voltage transients on high-k dielectrics
|
Dueñas, S. |
|
2007 |
88-90 |
4-5 |
p. 653-656 4 p. |
artikel |
75 |
Experimental study of carrier transport in multi-layered structures
|
Tao, Guoqiao |
|
2007 |
88-90 |
4-5 |
p. 610-614 5 p. |
artikel |
76 |
Extracting the relative dielectric constant for “high-κ layers” from CV measurements – Errors and error propagation
|
Buiu, O. |
|
2007 |
88-90 |
4-5 |
p. 678-681 4 p. |
artikel |
77 |
Eyring acceleration model in thick nitride/oxide dielectrics
|
Evseev, S.B. |
|
2007 |
88-90 |
4-5 |
p. 748-751 4 p. |
artikel |
78 |
Failure modes and mechanisms of InP-based and metamorphic high electron mobility transistors
|
Meneghesso, Gaudenzio |
|
2002 |
88-90 |
4-5 |
p. 685-708 24 p. |
artikel |
79 |
Ferroelectric characteristic of group IV elements added SrBi2Ta2O9 thin films
|
Tamura, Susumu |
|
2007 |
88-90 |
4-5 |
p. 830-833 4 p. |
artikel |
80 |
Flicker noise spectroscopy – a new method of studying non-stationary effects in electrical conductivity of oxides
|
Parkhutik, V. |
|
2000 |
88-90 |
4-5 |
p. 601-604 4 p. |
artikel |
81 |
Full-band tunneling in high-κ dielectric MOS structures
|
Sacconi, F. |
|
2007 |
88-90 |
4-5 |
p. 694-696 3 p. |
artikel |
82 |
Fundamental modification of gate silicon dioxide layer as a result of lateral gettering of electrically active centres
|
Uritsky, V.Ya. |
|
2000 |
88-90 |
4-5 |
p. 767-770 4 p. |
artikel |
83 |
Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability
|
Kaczer, B. |
|
2007 |
88-90 |
4-5 |
p. 559-566 8 p. |
artikel |
84 |
Growth of well-ordered silicon dioxide films on Mo(112)
|
Schroeder, T |
|
2000 |
88-90 |
4-5 |
p. 841-844 4 p. |
artikel |
85 |
Guest Editorial
|
Lombardo, Salvatore |
|
2007 |
88-90 |
4-5 |
p. 477-478 2 p. |
artikel |
86 |
High-K dielectric deposition in 3D architectures: The case of Ta2O5 deposited with metal–organic precursor TBTDET
|
Pinzelli, L. |
|
2007 |
88-90 |
4-5 |
p. 700-703 4 p. |
artikel |
87 |
High-K dielectrics for inter-poly application in non volatile memories
|
Sebastiani, A. |
|
2007 |
88-90 |
4-5 |
p. 598-601 4 p. |
artikel |
88 |
High quality gate insulator film formation on SiC using by microwave-excited high-density plasma
|
Tanaka, Koutarou |
|
2007 |
88-90 |
4-5 |
p. 786-789 4 p. |
artikel |
89 |
Hole traps and charges in ion implanted MOS capacitors: sensitivity to ionizing radiation
|
Sabaté, N. |
|
2000 |
88-90 |
4-5 |
p. 803-806 4 p. |
artikel |
90 |
Hot-carrier reliability in deep-submicrometer LATID NMOSFETs
|
Rafı́, J.M |
|
2000 |
88-90 |
4-5 |
p. 743-746 4 p. |
artikel |
91 |
Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-κ dielectrics
|
Abermann, S. |
|
2007 |
88-90 |
4-5 |
p. 536-539 4 p. |
artikel |
92 |
Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements
|
Néau, G. |
|
2007 |
88-90 |
4-5 |
p. 567-572 6 p. |
artikel |
93 |
Improved electrical properties using SrTiO3/Y2O3 bilayer dielectrics for MIM capacitor applications
|
Kahn, Maurice |
|
2007 |
88-90 |
4-5 |
p. 773-776 4 p. |
artikel |
94 |
Influence of interfaces on electrical characteristics formation in monocrystalline silicon–noncrystalline ultrathin oxide – polycrystalline silicon structures
|
Uritsky, V.Ya. |
|
2000 |
88-90 |
4-5 |
p. 605-608 4 p. |
artikel |
95 |
Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions
|
Amat, E. |
|
2007 |
88-90 |
4-5 |
p. 544-547 4 p. |
artikel |
96 |
Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks
|
Reimbold, G. |
|
2007 |
88-90 |
4-5 |
p. 489-496 8 p. |
artikel |
97 |
Interface properties of the Si(100)–SiO2 system formed by rapid thermal oxidation
|
O’Sullivan, B.J |
|
2000 |
88-90 |
4-5 |
p. 645-648 4 p. |
artikel |
98 |
Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiN x :H/InP and Al/SiN x :H/In0.53Ga0.47As structures by DLTS and conductance transient techniques
|
Castán, H |
|
2000 |
88-90 |
4-5 |
p. 845-848 4 p. |
artikel |
99 |
Interface states and traps in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices
|
Currò, Giuseppe |
|
2007 |
88-90 |
4-5 |
p. 819-821 3 p. |
artikel |
100 |
Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks
|
Srinivasan, P. |
|
2007 |
88-90 |
4-5 |
p. 501-504 4 p. |
artikel |
101 |
Internal photoemission in the MOS system at low electric fields in the dielectric. Model and applications
|
Przewlocki, H.M |
|
2000 |
88-90 |
4-5 |
p. 581-584 4 p. |
artikel |
102 |
Ionising radiation and electrical stress on nanocrystal memory cell array
|
Cester, A. |
|
2007 |
88-90 |
4-5 |
p. 602-605 4 p. |
artikel |
103 |
LOCOS induced stress effects on SOI bipolar devices
|
Privitera, S. |
|
2007 |
88-90 |
4-5 |
p. 802-805 4 p. |
artikel |
104 |
Logarithmic distributions in reliability analysis
|
Jones, B.K. |
|
2002 |
88-90 |
4-5 |
p. 779-786 8 p. |
artikel |
105 |
Low-frequency noise in hot-carrier degraded nMOSFETs
|
Salm, Cora |
|
2007 |
88-90 |
4-5 |
p. 577-580 4 p. |
artikel |
106 |
Low temperature photoformation of tantalum oxide
|
Boyd, Ian W |
|
2000 |
88-90 |
4-5 |
p. 649-655 7 p. |
artikel |
107 |
Macroscopic dielectric response of the metallic particles embedded in host dielectric medium
|
Grechko, L.G. |
|
2000 |
88-90 |
4-5 |
p. 893-895 3 p. |
artikel |
108 |
Measurement of the hot carrier damage profile in LDMOS devices stressed at high drain voltage
|
Corso, D. |
|
2007 |
88-90 |
4-5 |
p. 806-809 4 p. |
artikel |
109 |
Mechanical reliability in electronic packaging
|
Amagai, Masazumi |
|
2002 |
88-90 |
4-5 |
p. 607-627 21 p. |
artikel |
110 |
Mechanism of O2-anneal induced V fb shifts of Ru gated stacks
|
Li, Z. |
|
2007 |
88-90 |
4-5 |
p. 518-520 3 p. |
artikel |
111 |
Microstructure and electrical properties of gate SiO2 containing Ge nanoclusters for memory applications
|
Thees, H.-J |
|
2000 |
88-90 |
4-5 |
p. 867-871 5 p. |
artikel |
112 |
Modification of porous ultra-low K dielectric by electron-beam curing
|
Guedj, C. |
|
2007 |
88-90 |
4-5 |
p. 764-768 5 p. |
artikel |
113 |
NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase
|
Shickova, A. |
|
2007 |
88-90 |
4-5 |
p. 505-507 3 p. |
artikel |
114 |
Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures
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Entner, Robert |
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2007 |
88-90 |
4-5 |
p. 697-699 3 p. |
artikel |
115 |
New experiments on the electrodeposition of iron in porous silicon
|
Renaux, C |
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2000 |
88-90 |
4-5 |
p. 877-879 3 p. |
artikel |
116 |
Nitrogen bonding configurations near the oxynitride/silicon interface after oxynitridation in N2O ambient of a thin SiO2 gate
|
Monforte, F. |
|
2007 |
88-90 |
4-5 |
p. 822-824 3 p. |
artikel |
117 |
[No title]
|
Stojadinovic, Ninoslav |
|
2002 |
88-90 |
4-5 |
p. 463- 1 p. |
artikel |
118 |
[No title]
|
Garrido, Blas |
|
2000 |
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4-5 |
p. 555- 1 p. |
artikel |
119 |
Novel applications of organic based thin film transistors
|
Torsi, Luisa |
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2000 |
88-90 |
4-5 |
p. 779-782 4 p. |
artikel |
120 |
N2 remote plasma cleaning of InP to improve SiN x :H/InP interface performance
|
Redondo, E |
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2000 |
88-90 |
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p. 837-840 4 p. |
artikel |
121 |
On stress induced leakage current in 5 and 3 nm thick oxides
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Meinertzhagen, A |
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2000 |
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4-5 |
p. 711-714 4 p. |
artikel |
122 |
On the initial temporal current characteristics of thin oxide devices depending on constant voltage pulse sequences
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Zahlmann-Nowitzki, J.-W |
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2000 |
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4-5 |
p. 739-742 4 p. |
artikel |
123 |
Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition
|
Taechakumput, P. |
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2007 |
88-90 |
4-5 |
p. 825-829 5 p. |
artikel |
124 |
Optical characterization of dielectric borophosphosilicate glass
|
Gartner, Mariuca |
|
2000 |
88-90 |
4-5 |
p. 617-620 4 p. |
artikel |
125 |
Optical characterization of Si-rich silicon nitride films prepared by low pressure chemical vapor deposition
|
Vamvakas, V.Em. |
|
2007 |
88-90 |
4-5 |
p. 794-797 4 p. |
artikel |
126 |
Optical semiconductor device reliability
|
Fukuda, Mitsuo |
|
2002 |
88-90 |
4-5 |
p. 679-683 5 p. |
artikel |
127 |
Optimization and performance of Al2O3/GaN metal–oxide–semiconductor structures
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Čičo, K. |
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2007 |
88-90 |
4-5 |
p. 790-793 4 p. |
artikel |
128 |
Optimization of HfSiON using a design of experiment (DOE) approach on 0.45V V t Ni-FUSI CMOS transistors
|
Rothschild, A. |
|
2007 |
88-90 |
4-5 |
p. 521-524 4 p. |
artikel |
129 |
Oscillatory kinetics of anodic oxidation of silicon – influence of the crystallographic orientation
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Parkhutik, V |
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2000 |
88-90 |
4-5 |
p. 795-798 4 p. |
artikel |
130 |
Oxidation of Si1− x − y Ge x C y strained layers grown on Si: kinetics and interface properties
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Cuadras, A |
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2000 |
88-90 |
4-5 |
p. 829-832 4 p. |
artikel |
131 |
Parameters extraction of hafnium based gate oxide capacitors
|
Nguyen, T. |
|
2007 |
88-90 |
4-5 |
p. 729-732 4 p. |
artikel |
132 |
Passivation issues in active pixel CMOS image sensors
|
Regolini, J.L. |
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2007 |
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4-5 |
p. 739-742 4 p. |
artikel |
133 |
Peculiarities of electron tunnel injection to the drain of EEPROMs
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Baboux, N. |
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2007 |
88-90 |
4-5 |
p. 631-634 4 p. |
artikel |
134 |
Photoluminescence from pressure-annealed silicon dioxide and nitride films
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Misiuk, A |
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2000 |
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4-5 |
p. 881-884 4 p. |
artikel |
135 |
pH, pK and pNa detection properties of SiO2/Si3N4 ISFET chemical sensors
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Hajji, B |
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2000 |
88-90 |
4-5 |
p. 783-786 4 p. |
artikel |
136 |
Physical analysis of hard and soft breakdown failures in ultrathin gate oxides
|
Radhakrishnan, M.K. |
|
2002 |
88-90 |
4-5 |
p. 565-571 7 p. |
artikel |
137 |
Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films
|
Farrell, R.A. |
|
2007 |
88-90 |
4-5 |
p. 759-763 5 p. |
artikel |
138 |
Plasma damage in thin gate MOS dielectrics and its effect on device characteristics and reliability
|
Brożek, Tomasz |
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2000 |
88-90 |
4-5 |
p. 625-631 7 p. |
artikel |
139 |
Post deposition annealing studies of lanthanum aluminate and ceria high-k dielectrics on germanium
|
Galata, S.F. |
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2007 |
88-90 |
4-5 |
p. 532-535 4 p. |
artikel |
140 |
Quantitative oxide charge determination by photocurrent analysis
|
Rommel, M. |
|
2007 |
88-90 |
4-5 |
p. 673-677 5 p. |
artikel |
141 |
Random telegraph signal: A sensitive and nondestructive tool for gate oxide single trap characterization
|
Leyris, C. |
|
2007 |
88-90 |
4-5 |
p. 573-576 4 p. |
artikel |
142 |
Reduction of the parasitic charge generation during silicon nitride deposition in a LOCOS isolation without field implant
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Fay, J.L |
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2000 |
88-90 |
4-5 |
p. 593-596 4 p. |
artikel |
143 |
Refined electrical analysis of two charge states transition characteristic of “borderless” silicon nitride
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Beylier, G. |
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2007 |
88-90 |
4-5 |
p. 743-747 5 p. |
artikel |
144 |
Relation between defect generation, stress induced leakage current and soft breakdown in thin (<5 nm) oxides
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Rodrı́guez, R |
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2000 |
88-90 |
4-5 |
p. 707-710 4 p. |
artikel |
145 |
Relation between residual stress and electrical properties of polysilicon/oxide/silicon structures
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Jalabert, L |
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2000 |
88-90 |
4-5 |
p. 597-600 4 p. |
artikel |
146 |
Reliability aspects of Hf-based capacitors: Breakdown and trapping effects
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Duschl, R. |
|
2007 |
88-90 |
4-5 |
p. 497-500 4 p. |
artikel |
147 |
Reliability issues of silicon LSIs facing 100-nm technology node
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Takeda, Eiji |
|
2002 |
88-90 |
4-5 |
p. 493-506 14 p. |
artikel |
148 |
Reliability of HTO based high-voltage gate stacks for flash memories
|
Raskin, Yosef |
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2007 |
88-90 |
4-5 |
p. 615-618 4 p. |
artikel |
149 |
Reliability of ultra-thin N2O-nitrided oxides grown by RTP under low pressure and in different gas atmospheres
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Beichele, M |
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2000 |
88-90 |
4-5 |
p. 723-726 4 p. |
artikel |
150 |
Reliability screening of high-k dielectrics based on voltage ramp stress
|
Kerber, A. |
|
2007 |
88-90 |
4-5 |
p. 513-517 5 p. |
artikel |
151 |
Reversible and irreversible interface trap centres generated at high electric fields in MOS structures
|
Jastrzębski, C |
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2000 |
88-90 |
4-5 |
p. 755-758 4 p. |
artikel |
152 |
RF CMOS technology for MMIC
|
Chang, Chun-Yen |
|
2002 |
88-90 |
4-5 |
p. 721-733 13 p. |
artikel |
153 |
RTA effects on the formation process of embedded luminescent Si nanocrystals in SiO2
|
Iwayama, T.S. |
|
2007 |
88-90 |
4-5 |
p. 781-785 5 p. |
artikel |
154 |
Selected failure mechanisms of modern power modules
|
Ciappa, Mauro |
|
2002 |
88-90 |
4-5 |
p. 653-667 15 p. |
artikel |
155 |
Silicon integrated circuit technology from past to future
|
Iwai, Hiroshi |
|
2002 |
88-90 |
4-5 |
p. 465-491 27 p. |
artikel |
156 |
Silicon microsystem passivation for high-voltage applications in DNA chips
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Erill, I |
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2000 |
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4-5 |
p. 787-789 3 p. |
artikel |
157 |
Silicon nanocrystal non-volatile memory for embedded memory scaling
|
Steimle, R.F. |
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2007 |
88-90 |
4-5 |
p. 585-592 8 p. |
artikel |
158 |
Silicon wafer oxygenation from SiO2 layers for radiation hard detectors
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Fonseca, L. |
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2000 |
88-90 |
4-5 |
p. 791-794 4 p. |
artikel |
159 |
Smoothing, passivation and re-passivation of silicon surfaces by anodic oxidation: a low thermal budget process
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Rappich, J |
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2000 |
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4-5 |
p. 815-819 5 p. |
artikel |
160 |
State-of-the-art and future of silicon on insulator technologies, materials, and devices
|
Cristoloveanu, Sorin |
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2000 |
88-90 |
4-5 |
p. 771-777 7 p. |
artikel |
161 |
Statistical modeling of MOS devices for parametric yield prediction
|
Liou, Juin J. |
|
2002 |
88-90 |
4-5 |
p. 787-795 9 p. |
artikel |
162 |
Study of nanocrystal memory integration in a Flash-like NOR device
|
Gerardi, Cosimo |
|
2007 |
88-90 |
4-5 |
p. 593-597 5 p. |
artikel |
163 |
Study of the positive charge buildup into buried oxide of SIMOX SOI structure during bias–temperature stress
|
Barchuk, I |
|
2000 |
88-90 |
4-5 |
p. 811-814 4 p. |
artikel |
164 |
Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode of PMOS devices
|
Herden, M |
|
2000 |
88-90 |
4-5 |
p. 633-636 4 p. |
artikel |
165 |
Synthesis and characterisation of metal suboxides for gas sensors
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Calderer, J |
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2000 |
88-90 |
4-5 |
p. 807-810 4 p. |
artikel |
166 |
Synthesis of luminescent particles in SiO2 films by sequential Si and C ion implantation
|
González-Varona, O |
|
2000 |
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4-5 |
p. 885-888 4 p. |
artikel |
167 |
Templates for LaAlO3 epitaxy on silicon
|
Boulenc, P. |
|
2007 |
88-90 |
4-5 |
p. 709-713 5 p. |
artikel |
168 |
Test structures for dielectric spectroscopy of thin films at microwave frequencies
|
Delmonte, N. |
|
2007 |
88-90 |
4-5 |
p. 682-685 4 p. |
artikel |
169 |
Tetraethylorthosilicate SiO2 films deposited at a low temperature
|
da Silva, A.N.R. |
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2000 |
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4-5 |
p. 621-624 4 p. |
artikel |
170 |
The characterization of retention properties of metal–ferroelectric (PbZr0.53Ti0.47O3)–insulator (Dy2O3, Y2O3)–semiconductor devices
|
Su, Yu-Di |
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2007 |
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4-5 |
p. 619-622 4 p. |
artikel |
171 |
The effect of stress polarity on positive charging in thin gate oxide
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Bellutti, P |
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2000 |
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4-5 |
p. 747-750 4 p. |
artikel |
172 |
The image force effect on the barrier height in MOS structures: correlation of the corrected barrier height with temperature and the oxide thickness
|
Salace, G |
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2000 |
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4-5 |
p. 763-766 4 p. |
artikel |
173 |
The influence of hydrogen and nitrogen on the formation of Si nanoclusters embedded in sub-stoichiometric silicon oxide layers
|
Caristia, Liliana |
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2007 |
88-90 |
4-5 |
p. 777-780 4 p. |
artikel |
174 |
The positive charge neutralisation after bi-directional stress on MOS capacitors
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Ziane, D |
|
2000 |
88-90 |
4-5 |
p. 759-761 3 p. |
artikel |
175 |
The relentless march of the MOSFET gate oxide thickness to zero
|
Timp, G |
|
2000 |
88-90 |
4-5 |
p. 557-562 6 p. |
artikel |
176 |
The roles of charged and neutral oxidising species in silicon oxidation from ab initio calculations
|
Szymanski, M.A |
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2000 |
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4-5 |
p. 567-570 4 p. |
artikel |
177 |
The “trouble not identified” phenomenon in automotive electronics
|
Thomas, Dawn A. |
|
2002 |
88-90 |
4-5 |
p. 641-651 11 p. |
artikel |
178 |
Time decay of stress induced leakage current in thin gate oxides by low-field electron injection
|
Cester, A |
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2000 |
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p. 715-718 4 p. |
artikel |
179 |
Total ionizing dose reliability of thin SiO2 in PowerMOSFET devices
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Cascio, A. |
|
2007 |
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4-5 |
p. 815-818 4 p. |
artikel |
180 |
Transport process in thin SiO2 films with an embedded 2-D array of Si nanocrystals
|
De Salvo, B |
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2000 |
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4-5 |
p. 863-866 4 p. |
artikel |
181 |
Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition
|
Lu, Y. |
|
2007 |
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4-5 |
p. 722-725 4 p. |
artikel |
182 |
Ultra-thin oxide reliability: searching for the thickness scaling limit
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Degraeve, R |
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2000 |
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p. 697-701 5 p. |
artikel |
183 |
Ultra-thin SiO2 film studies: index, thickness, roughness and the initial oxidation regime
|
Irene, Eugene A |
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2000 |
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4-5 |
p. 563-565 3 p. |
artikel |
184 |
Use of preliminary ultraviolet and infrared illumination for diagnostics of MOS and bipolar devices radiation response
|
Pershenkov, V.S. |
|
2002 |
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4-5 |
p. 797-804 8 p. |
artikel |
185 |
Volatility and vapourisation characterisation of new precursors
|
Rushworth, Simon |
|
2007 |
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4-5 |
p. 718-721 4 p. |
artikel |
186 |
VSP – A gate stack analyzer
|
Karner, M. |
|
2007 |
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4-5 |
p. 704-708 5 p. |
artikel |
187 |
Wet or dry ultrathin oxides: impact on gate oxide and device reliability
|
Bruyère, S |
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2000 |
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4-5 |
p. 691-695 5 p. |
artikel |
188 |
WODIM 2008 – First Announcement 15th Workshop on Dielectrics in Microelectronics June 22–26, 2008 in Bad Saarow (Berlin), Germany
|
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2007 |
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p. 838- 1 p. |
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Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror
|
Martín-Martínez, J. |
|
2007 |
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p. 665-668 4 p. |
artikel |
190 |
Zapping thin film transistors
|
Tošić Golo, N. |
|
2002 |
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4-5 |
p. 747-765 19 p. |
artikel |