nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
AC effects in IC reliability
|
Hu, Chenming |
|
1996 |
88-90 |
11-12 |
p. 1611-1617 |
artikel |
2 |
A comparison of focused ion beam and electron beam induced deposition processes
|
Lipp, S. |
|
1996 |
88-90 |
11-12 |
p. 1779-1782 |
artikel |
3 |
A comparison of MOSFETs aging under d.c., a.c. and alternating stress conditions
|
Revil, Nathalie |
|
1993 |
88-90 |
11-12 |
p. 1909-1919 11 p. |
artikel |
4 |
A current self-limited protective device studied by LF-noise measurements
|
Modjtahedi, A. |
|
1996 |
88-90 |
11-12 |
p. 1759-1762 |
artikel |
5 |
A fast mechanical test technique for life time estimation of micro-joints
|
Khatibi, G. |
|
2008 |
88-90 |
11-12 |
p. 1822-1830 9 p. |
artikel |
6 |
A low power MEMS gas sensor based on nanocrystalline ZnO thin films for sensing methane
|
Bhattacharyya, P. |
|
2008 |
88-90 |
11-12 |
p. 1772-1779 8 p. |
artikel |
7 |
Analysis of the surface base current drift in GaAs HBT's
|
Maneux, C. |
|
1996 |
88-90 |
11-12 |
p. 1903-1906 |
artikel |
8 |
An automated approach for locating multiple faulty LUTs in an FPGA
|
Nandha Kumar, T. |
|
2008 |
88-90 |
11-12 |
p. 1900-1906 7 p. |
artikel |
9 |
A new analytic model for the description of the intrinsic oxide breakdown statistics of ultra-thin oxides
|
Degraeve, R. |
|
1996 |
88-90 |
11-12 |
p. 1639-1642 |
artikel |
10 |
A new method to determine the influence of thermomechanical stress on the reliability of metal lines in integrated circuits
|
Glasow, A.v. |
|
1996 |
88-90 |
11-12 |
p. 1755-1758 |
artikel |
11 |
A new physics-based model for time-dependent Dielectric breakdown
|
Schlund, B.J. |
|
1996 |
88-90 |
11-12 |
p. 1655-1658 |
artikel |
12 |
A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions
|
Degraeve, R. |
|
1996 |
88-90 |
11-12 |
p. 1651-1654 |
artikel |
13 |
A new technique to characterize the early stages of electromigration-induced resistance changes at low current densities
|
D'Haeger, V. |
|
1996 |
88-90 |
11-12 |
p. 1695-1698 |
artikel |
14 |
A new wafer level reliability method for evaluation of ionic induced pmosfet drift effects
|
Dreizner, A. |
|
1996 |
88-90 |
11-12 |
p. 1855-1858 |
artikel |
15 |
An investigation of hot carrier effects in submicron CMOS integrated circuits
|
Fang, Peng |
|
1993 |
88-90 |
11-12 |
p. 1713-1727 15 p. |
artikel |
16 |
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks
|
Pagano, R. |
|
2008 |
88-90 |
11-12 |
p. 1759-1764 6 p. |
artikel |
17 |
Application of the atomic force microscope to integrated circuit failure analysis
|
Rodgers, Mark R. |
|
1993 |
88-90 |
11-12 |
p. 1947-1956 10 p. |
artikel |
18 |
A practical system for hot spot detection using fluorescent microthermal imaging
|
Glacet, J.-Y. |
|
1996 |
88-90 |
11-12 |
p. 1811-1814 |
artikel |
19 |
A review of board level solder joints for mobile applications
|
Wong, E.H. |
|
2008 |
88-90 |
11-12 |
p. 1747-1758 12 p. |
artikel |
20 |
Assessment of oxide charge density and centroid from Fowler-Nordheim derivative characteristics in MOS structures after uniform gate stress
|
Kies, R. |
|
1996 |
88-90 |
11-12 |
p. 1619-1622 |
artikel |
21 |
Automotive and aerospace electronic systems. Dependability requirements
|
Rose, P.D. |
|
1996 |
88-90 |
11-12 |
p. 1923-1929 |
artikel |
22 |
A wafer level reliability method for short-loop processing
|
Duluc, J.B. |
|
1996 |
88-90 |
11-12 |
p. 1859-1862 |
artikel |
23 |
Calendar
|
|
|
2008 |
88-90 |
11-12 |
p. I-II nvt p. |
artikel |
24 |
Characterisation of chip-on-board and flip chip packaging technologies by acoustic microscopy
|
Lawton, W. |
|
1996 |
88-90 |
11-12 |
p. 1803-1806 |
artikel |
25 |
Characterisation of electromigration damage by multiple electrical measurements
|
Jones, B.K. |
|
1993 |
88-90 |
11-12 |
p. 1829-1840 12 p. |
artikel |
26 |
Characterisation of reliability of compound semiconductor devices using electrical pulses
|
Brandt, M. |
|
1996 |
88-90 |
11-12 |
p. 1891-1894 |
artikel |
27 |
Comprehensive gate-oxide reliability evaluation for dram processes
|
Vollertsen, R.-P. |
|
1996 |
88-90 |
11-12 |
p. 1631-1638 |
artikel |
28 |
Comprehensive physical modeling of nmosfet hot-carrier-induced degradation
|
Lunenborg, M.M. |
|
1996 |
88-90 |
11-12 |
p. 1667-1670 |
artikel |
29 |
Consideration of temperature and current stress testing on flip chip solder interconnects
|
Yeo, Alfred |
|
2008 |
88-90 |
11-12 |
p. 1847-1856 10 p. |
artikel |
30 |
Copper interconnection lines: SARF characterization and lifetime test
|
Ciofi, C. |
|
1996 |
88-90 |
11-12 |
p. 1747-1750 |
artikel |
31 |
DC, LF dispersion and hf characterisation of short time stressed inp based LM-HEMTS
|
Schreurs, D. |
|
1996 |
88-90 |
11-12 |
p. 1911-1914 |
artikel |
32 |
Designing circuits and processes to optimize performance and reliability: Metallurgy meets tcad
|
Thompson, C.V. |
|
1996 |
88-90 |
11-12 |
p. 1683-1690 |
artikel |
33 |
Design of a test structure to evaluate electro-thermomigration in power ICs
|
De Munari, I. |
|
1996 |
88-90 |
11-12 |
p. 1875-1878 |
artikel |
34 |
Dielectric integrity of thin thermal oxides on silicon
|
Brożek, Tomasz |
|
1993 |
88-90 |
11-12 |
p. 1637-1656 20 p. |
artikel |
35 |
Diffusion barrier performance of Zr–N/Zr bilayered film in Cu/Si contact system
|
Wang, Ying |
|
2008 |
88-90 |
11-12 |
p. 1800-1803 4 p. |
artikel |
36 |
Drain current dlts analysis of recoverable and permanent degradation effects in AlGaAs/GaAs AND AlGaAs/InGaAs HEMT'S
|
Meneghesso, G. |
|
1996 |
88-90 |
11-12 |
p. 1895-1898 |
artikel |
37 |
Dynamic effects in hot-carrier degradation relevant for CMOS operation
|
Weber, W. |
|
1993 |
88-90 |
11-12 |
p. 1729-1736 8 p. |
artikel |
38 |
Editorial
|
Stojadinović, N.D. |
|
1993 |
88-90 |
11-12 |
p. 1635-1636 2 p. |
artikel |
39 |
Effect of high-speed loading conditions on the fracture mode of the BGA solder joint
|
Kim, Jong-Woong |
|
2008 |
88-90 |
11-12 |
p. 1882-1889 8 p. |
artikel |
40 |
Effect of the pre-gate oxide cleaning temperature on the reliability of GOI and devices performances in deep submicron CMOS technology
|
Chiang, Y.T. |
|
2008 |
88-90 |
11-12 |
p. 1786-1790 5 p. |
artikel |
41 |
Effects of aluminum incorporation on hafnium oxide film using plasma immersion ion implantation
|
Sen, Banani |
|
2008 |
88-90 |
11-12 |
p. 1765-1768 4 p. |
artikel |
42 |
Effects of isothermal aging and temperature–humidity treatment of substrate on joint reliability of Sn–3.0Ag–0.5Cu/OSP-finished Cu CSP solder joint
|
Yoon, Jeong-Won |
|
2008 |
88-90 |
11-12 |
p. 1864-1874 11 p. |
artikel |
43 |
Effects of metallization lay-out on turn-off failure of modern power bipolar transistors
|
Busatto, G. |
|
1996 |
88-90 |
11-12 |
p. 1867-1870 |
artikel |
44 |
Efficient output ESD protection for 0.5-μm high-speed CMOS SRAM IC with well-coupled technique
|
Ker, Ming-Dou |
|
1996 |
88-90 |
11-12 |
p. 1731-1734 |
artikel |
45 |
Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack
|
Ahmet, Parhat |
|
2008 |
88-90 |
11-12 |
p. 1769-1771 3 p. |
artikel |
46 |
Electric field dependence of TDDB activation energy in ultrathin oxides
|
Vincent, E. |
|
1996 |
88-90 |
11-12 |
p. 1643-1646 |
artikel |
47 |
Electromigration in thin-films for microelectronics
|
Baldini, G.L. |
|
1993 |
88-90 |
11-12 |
p. 1779-1805 27 p. |
artikel |
48 |
Enhancement of t bd of mos gate oxides with a single-step pre-stress prior to a CVS in the Fowler-Nordheim regime
|
Martini, A. |
|
1996 |
88-90 |
11-12 |
p. 1647-1650 |
artikel |
49 |
ESD protection to overcome internal gate-oxide damage on digital-analog interface of mixed-mode CMOS IC's
|
Ker, Ming-Dou |
|
1996 |
88-90 |
11-12 |
p. 1727-1730 |
artikel |
50 |
Evaluation of structural degradation in packaged semiconductor components using a transient thermal characterisation technique
|
Christiaens, F. |
|
1996 |
88-90 |
11-12 |
p. 1807-1810 |
artikel |
51 |
Examination of reflow resistance for copper frame smd products
|
Setoya, T. |
|
1996 |
88-90 |
11-12 |
p. 1799-1802 |
artikel |
52 |
Experimental validation of mechanical stress models by micro-Raman spectroscopy
|
De Wolf, I. |
|
1996 |
88-90 |
11-12 |
p. 1751-1754 |
artikel |
53 |
Finite element investigations of mechanical stress in metallization structures
|
Weide, K. |
|
1996 |
88-90 |
11-12 |
p. 1703-1706 |
artikel |
54 |
Finite element model verification for packaged printed circuit board by experimental modal analysis
|
Lee, Ying-Chih |
|
2008 |
88-90 |
11-12 |
p. 1837-1846 10 p. |
artikel |
55 |
Hot-carrier effects in scaled MOS devices
|
Takeda, Eiji |
|
1993 |
88-90 |
11-12 |
p. 1687-1711 25 p. |
artikel |
56 |
Hot-carrier effects on leakage currents in MOSFETs—Modelling and experiment
|
Oualid, J. |
|
1993 |
88-90 |
11-12 |
p. 1759-1777 19 p. |
artikel |
57 |
Hot-carrier reliability of N- and P-channel mosfets with polysilicon and CVD tungsten-polycide gate
|
Lou, C.L. |
|
1996 |
88-90 |
11-12 |
p. 1663-1666 |
artikel |
58 |
Implications of a localised defect model for wafer level reliability measurements of thin dielectrics
|
O'Sullivan, Paula |
|
1993 |
88-90 |
11-12 |
p. 1679-1685 7 p. |
artikel |
59 |
Improved critical area prediction by application of pattern recognition techniques
|
Mattick, J.H.N. |
|
1996 |
88-90 |
11-12 |
p. 1815-1818 |
artikel |
60 |
Improved sensing characteristics of MISiC Schottky-diode hydrogen sensor by using HfO2 as gate insulator
|
Tang, W.M. |
|
2008 |
88-90 |
11-12 |
p. 1780-1785 6 p. |
artikel |
61 |
Improved upper contacts PMMA on P3HT PTFTS using photolithographic processes
|
Mejia, I. |
|
2008 |
88-90 |
11-12 |
p. 1795-1799 5 p. |
artikel |
62 |
Influence of parasitic structures on the ESD performance of a pure bipolar process
|
Nikolaïdis, T. |
|
1996 |
88-90 |
11-12 |
p. 1723-1726 |
artikel |
63 |
Influence of series resistance in oxide parameter extraction data from accelerated tests
|
Pio, F. |
|
1993 |
88-90 |
11-12 |
p. 1657-1663 7 p. |
artikel |
64 |
Influence of the ferroelectric domain structure and switching properties on the endurance of PZT ferroelectric capacitors
|
Wouters, D.J. |
|
1996 |
88-90 |
11-12 |
p. 1763-1766 |
artikel |
65 |
Influence of underfill materials on the reliability of coreless flip chip package
|
Chuang, Chun-Chih |
|
2008 |
88-90 |
11-12 |
p. 1875-1881 7 p. |
artikel |
66 |
Inside front cover - Editorial board
|
|
|
2008 |
88-90 |
11-12 |
p. IFC- 1 p. |
artikel |
67 |
In-situ monitoring of dry corrosion degradation of au ball bonds to al bond pads in plastic packages during HTSL
|
Ragay, F.W. |
|
1996 |
88-90 |
11-12 |
p. 1931-1934 |
artikel |
68 |
Introduction of plastic encapsulated devices in systems operating under severe temperature conditions
|
Hernandez, R |
|
1996 |
88-90 |
11-12 |
p. 1943-1946 |
artikel |
69 |
Investigation of charge trapping/de-trapping induced operation lifetime degradation in triple SuperFlash® memory cell
|
Cao, Zigui |
|
2008 |
88-90 |
11-12 |
p. 1809-1814 6 p. |
artikel |
70 |
Investigation of trapped charge in oxides under Fowler-Nordheim stress using low bias conditions
|
Duane, R. |
|
1996 |
88-90 |
11-12 |
p. 1623-1626 |
artikel |
71 |
Justifications for reducing HBM and MM ESD qualification test time
|
Verhaege, K. |
|
1996 |
88-90 |
11-12 |
p. 1715-1718 |
artikel |
72 |
Measurement and modeling of a new width dependence of nmosfet degradation
|
Schuler, F. |
|
1996 |
88-90 |
11-12 |
p. 1675-1678 |
artikel |
73 |
Mechanical reliability of Sn-rich Au–Sn/Ni flip chip solder joints fabricated by sequential electroplating method
|
Yoon, Jeong-Won |
|
2008 |
88-90 |
11-12 |
p. 1857-1863 7 p. |
artikel |
74 |
Method for precise determination of the statistical distribution of the input offset voltage of differential stages
|
Thewes, R. |
|
1996 |
88-90 |
11-12 |
p. 1823-1826 |
artikel |
75 |
Microdac — A novel approach to measure in situ deformation fields of microscopic scale
|
Vogel, D. |
|
1996 |
88-90 |
11-12 |
p. 1939-1942 |
artikel |
76 |
Model for life prediction of fatigue–creep interaction
|
Valentín, R. |
|
2008 |
88-90 |
11-12 |
p. 1831-1836 6 p. |
artikel |
77 |
Nanoscopic evaluation of semiconductor properties by scanning probe microscopies
|
Balk, L.J. |
|
1996 |
88-90 |
11-12 |
p. 1767-1774 |
artikel |
78 |
New experimental findings on hot carrier effects in deep submicrometer surface channel PMOS
|
Park, Jong Tae |
|
1996 |
88-90 |
11-12 |
p. 1659-1662 |
artikel |
79 |
On the applicability of MIL-Spec-based helium fine leak test to packages with sub-micro liter cavity volumes
|
Goswami, Arindam |
|
2008 |
88-90 |
11-12 |
p. 1815-1821 7 p. |
artikel |
80 |
On the status of wafer-level metal integrity testing
|
Dion, Michael J. |
|
1993 |
88-90 |
11-12 |
p. 1807-1827 21 p. |
artikel |
81 |
Oxide breakdown decrease by oxide growth projection of implantation-caused stacking faults — A characterization case study using atomic force microscopy
|
Jacob, P. |
|
1996 |
88-90 |
11-12 |
p. 1783-1786 |
artikel |
82 |
Preface
|
Groeseneken, G. |
|
1996 |
88-90 |
11-12 |
p. vii-ix |
artikel |
83 |
Pulsed stress reliability investigations of schottky diodes and HBTS
|
Schüβler, M. |
|
1996 |
88-90 |
11-12 |
p. 1907-1910 |
artikel |
84 |
Pulsed thermal characterization of a reverse biased pn-junction for ESD HBM simulation
|
Wolf, H. |
|
1996 |
88-90 |
11-12 |
p. 1711-1714 |
artikel |
85 |
Quality and reliability improvement through defect oriented failure analysis
|
de Pauw, P. |
|
1996 |
88-90 |
11-12 |
p. 1835-1838 |
artikel |
86 |
Question marks to the extrapolation to lower temperatures in high temperature storage life (HTSL) testing in plastic encapsulated IC'S
|
Schuddeboom, W. |
|
1996 |
88-90 |
11-12 |
p. 1935-1938 |
artikel |
87 |
Relation between yield and reliability of integrated circuits and application to failure rate assessment and reduction in the one digit FIT and PPM reliability ERA
|
Van Der Pol, Jacob A. |
|
1996 |
88-90 |
11-12 |
p. 1603-1610 |
artikel |
88 |
Relationship between profile of stressgenerated interface traps and degradation of submicron LDD mosfet's
|
Okhonin, S. |
|
1996 |
88-90 |
11-12 |
p. 1671-1674 |
artikel |
89 |
Reliability and degradation behaviors of semi-insulating Fe-doped InP buried heterostructure lasers fabricated by movpe and dry etching technique
|
Mawatari, Hiroyasu |
|
1996 |
88-90 |
11-12 |
p. 1915-1918 |
artikel |
90 |
Reliability improvement of single-poly quasi self-aligned bicmos bjts using base surface arsenic compensation
|
Vendrame, L. |
|
1996 |
88-90 |
11-12 |
p. 1827-1830 |
artikel |
91 |
Reliability indicators for lift-off of bond wires in IGBT power-modules
|
Farokhzad, B. |
|
1996 |
88-90 |
11-12 |
p. 1863-1866 |
artikel |
92 |
Reliability issues in submicron MOSFETs with oxynitride gate dielectrics
|
Joshi, Aniruddha B. |
|
1993 |
88-90 |
11-12 |
p. 1845-1866 22 p. |
artikel |
93 |
Reliability issues of offset drain transistors after different modes of static electrical stress
|
Papadas, C. |
|
1993 |
88-90 |
11-12 |
p. 1921-1933 13 p. |
artikel |
94 |
Reliability issues of silicon-dioxide structures—Application to FLOTOX EEPROM cells
|
Papadas, C. |
|
1993 |
88-90 |
11-12 |
p. 1867-1908 42 p. |
artikel |
95 |
Reliability of a focused ion beam repair on digital cmos circuits
|
Van Camp, R |
|
1996 |
88-90 |
11-12 |
p. 1787-1790 |
artikel |
96 |
Reproducibility of field failures by ESD models — Comparison of HBM, socketed CDM and non-socketed CDM
|
Brodbeck, T. |
|
1996 |
88-90 |
11-12 |
p. 1719-1722 |
artikel |
97 |
Resistance changes due to Cu transport and precipitation during electromigration in submicrometric Al-0.5% Cu lines
|
Scorzoni, A. |
|
1996 |
88-90 |
11-12 |
p. 1691-1694 |
artikel |
98 |
Resistance decay after electromigration as the effect of mechanical stress relaxation
|
Baldini, G.L. |
|
1993 |
88-90 |
11-12 |
p. 1841-1844 4 p. |
artikel |
99 |
Risetime effects of HBM and square pulses on the failure thresholds of GGNMOS-transistors
|
Musshoff, C. |
|
1996 |
88-90 |
11-12 |
p. 1743-1746 |
artikel |
100 |
SEGR: A unique failure mode for power MOSFETs in spacecraft
|
Allenspach, M. |
|
1996 |
88-90 |
11-12 |
p. 1871-1874 |
artikel |
101 |
Self-testing of fully differential multistage circuits using common-mode excitation
|
Toczek, Wojciech |
|
2008 |
88-90 |
11-12 |
p. 1890-1899 10 p. |
artikel |
102 |
Significantly improving sub-90nm CMOSFET performances with notch-gate enhanced high tensile-stress contact etch stop layer
|
Hsu, Chia-Wei |
|
2008 |
88-90 |
11-12 |
p. 1791-1794 4 p. |
artikel |
103 |
Simulation of the gate burnout of GaAs mesfet
|
Vashchenko, V.A. |
|
1996 |
88-90 |
11-12 |
p. 1887-1890 |
artikel |
104 |
Simulation study for the CDM ESD behaviour of the grounded-gate nmos
|
Russ, C. |
|
1996 |
88-90 |
11-12 |
p. 1739-1742 |
artikel |
105 |
Soldered joints on leaded components: Development of a design tool to predict failure during temperature cycle tests
|
Wolbert, P.M.M. |
|
1996 |
88-90 |
11-12 |
p. 1791-1797 |
artikel |
106 |
Statistical modelling of time dependent oxide breakdown distributions
|
Vollertsen, R.-P. |
|
1993 |
88-90 |
11-12 |
p. 1665-1677 13 p. |
artikel |
107 |
Study of the microstructure of IC interconnect metallisations using analytical transmission electron microscopy and secondary ion mass spectrometry
|
Cosemans, P. |
|
1996 |
88-90 |
11-12 |
p. 1699-1702 |
artikel |
108 |
Study of the soft leakage current induced ESD on LDD transistor
|
Wada, Tetsuaki |
|
1996 |
88-90 |
11-12 |
p. 1707-1710 |
artikel |
109 |
Study on the reliability of an InP/InGaAsP integrated laser modulator
|
Hornung, V. |
|
1996 |
88-90 |
11-12 |
p. 1919-1922 |
artikel |
110 |
The application of advanced techniques for complex focused-ion-beam device modification
|
Abramo, M.T. |
|
1996 |
88-90 |
11-12 |
p. 1775-1778 |
artikel |
111 |
The degradation mechanisms in high voltage pLEDMOS transistor with thick gate oxide
|
Wu, Hong |
|
2008 |
88-90 |
11-12 |
p. 1804-1808 5 p. |
artikel |
112 |
The effect of hot electron stress on the dc and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTs
|
Menozzi, R. |
|
1996 |
88-90 |
11-12 |
p. 1899-1902 |
artikel |
113 |
The GaAs heterojunction bipolar transistor: an electron device with optical device reliability
|
Henderson, T.S. |
|
1996 |
88-90 |
11-12 |
p. 1879-1886 |
artikel |
114 |
The impact of oxide degradation on the low frequency ( 1 f ) noise behaviour of P channel mosfets
|
Hurley, Paul K. |
|
1996 |
88-90 |
11-12 |
p. 1679-1682 |
artikel |
115 |
The influence of process variations on the robustness of an audio power IC
|
Krabbenborg, Benno |
|
1996 |
88-90 |
11-12 |
p. 1819-1822 |
artikel |
116 |
The in-process bond shear test: Its relationship to ball bond reliability and its application to the reduction of wirebond process variation
|
Guzman, Melissa Shell-De |
|
1993 |
88-90 |
11-12 |
p. 1935-1946 12 p. |
artikel |
117 |
The isocurrent test: A promising tool for wafer-level evaluation of the interconnect reliability
|
Witvrouw, A. |
|
1996 |
88-90 |
11-12 |
p. 1847-1850 |
artikel |
118 |
Threshold voltage degradation in plasma-damaged CMOS transistors — Role of electron and hole traps related to charging damage
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Brożek, Tomasz |
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1996 |
88-90 |
11-12 |
p. 1627-1630 |
artikel |
119 |
Transient hot-electron effect and its impact on circuit reliability
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Wang, Hai |
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1993 |
88-90 |
11-12 |
p. 1737-1758 22 p. |
artikel |
120 |
Turn-on speed of grounded gate nMOS ESD protection transistors
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Meneghesso, G. |
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1996 |
88-90 |
11-12 |
p. 1735-1738 |
artikel |
121 |
Validation of yield models with CMOS/SOS test structures
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Riviere, V. |
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1996 |
88-90 |
11-12 |
p. 1831-1834 |
artikel |
122 |
Wafer level measurement system for sarf characterization of metal lines
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Ciofi, C. |
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1996 |
88-90 |
11-12 |
p. 1851-1854 |
artikel |
123 |
Wafer level reliability: Process control for reliability
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Turner, Timothy E. |
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1996 |
88-90 |
11-12 |
p. 1839-1846 |
artikel |