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                             46 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability Kaczer, B.
2018
81 C p. 186-194
artikel
2 A comparative analysis of microstructural features, tensile properties and wettability of hypoperitectic and peritectic Sn-Sb solder alloys Dias, Marcelino
2018
81 C p. 150-158
artikel
3 A fast and flexible HW/SW co-processing framework for Time-of-Flight 3D imaging Druml, Norbert
2018
81 C p. 64-76
artikel
4 Analysis of low isolation problem in HMC using Ishikawa model: A case study Jayaprasad, G.
2018
81 C p. 195-200
artikel
5 A new hermetic sealing method for ceramic package using nanosilver sintering technology Zhang, Hao
2018
81 C p. 143-149
artikel
6 An improved reliability model for Si and GaN power FET Golan, Gady
2018
81 C p. 77-89
artikel
7 An improved unscented particle filter approach for lithium-ion battery remaining useful life prediction Zhang, Heng
2018
81 C p. 288-298
artikel
8 A review of NBTI mechanisms and models Mahapatra, Souvik
2018
81 C p. 127-135
artikel
9 A review on discoloration and high accelerated testing of optical materials in LED based-products Yazdan Mehr, M.
2018
81 C p. 136-142
artikel
10 Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance Lenahan, P.M.
2018
81 C p. 1-6
artikel
11 Bias temperature instability in scaled CMOS technologies: A circuit perspective Kerber, A.
2018
81 C p. 31-40
artikel
12 Considerations in printing conductive traces for high pulsed power applications Aga, Roberto S.
2018
81 C p. 342-351
artikel
13 Controversial issues in negative bias temperature instability Stathis, James H.
2018
81 C p. 244-251
artikel
14 Discovering and reducing defects in MIM capacitors Roesch, William J.
2018
81 C p. 299-305
artikel
15 Dislocation assisted diffusion: A mechanism for growth of intermetallic compounds in copper ball bonds Gholamirad, Maryam
2018
81 C p. 210-217
artikel
16 Editorial Board 2018
81 C p. ii
artikel
17 Effect of solder bump shapes on underfill flow in flip-chip encapsulation using analytical, numerical and PIV experimental approaches Ng, Fei Chong
2018
81 C p. 41-63
artikel
18 Fast identification of true critical paths in sequential circuits Ubar, Raimund
2018
81 C p. 252-261
artikel
19 Fault tolerant encoders for Single Error Correction and Double Adjacent Error Correction codes Liu, Shanshan
2018
81 C p. 167-173
artikel
20 Foreword to the special issue on 20th IEEE international symposium on design and diagnostics of electronic circuits and systems (DDECS2017) Zoran, Stamenkovic
2018
81 C p. 287
artikel
21 Heuristic Kalman optimized particle filter for remaining useful life prediction of lithium-ion battery Duong, Pham Luu Trung
2018
81 C p. 232-243
artikel
22 Influence of rotating magnetic field on solidification microstructure and tensile properties of Sn-Bi lead-free solders El-Daly, A.A.
2018
81 C p. 352-361
artikel
23 Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20nm modern integrated circuits Ahn, W.
2018
81 C p. 262-273
artikel
24 Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices Ma, Teng
2018
81 C p. 112-116
artikel
25 Investigation of BTI characteristics and its behavior on 10nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack Jin, Minjung
2018
81 C p. 201-209
artikel
26 Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits Guo, Shaofeng
2018
81 C p. 101-111
artikel
27 Investigations and detections on a new BEOL dielectric failure mechanism at advanced technologies Chien, Wei-Ting Kary
2018
81 C p. 368-372
artikel
28 Lifetime of electret microphones by thermal degradation analysis via electroacoustic measurements Nogueira, E.
2018
81 C p. 95-100
artikel
29 Measurement considerations for evaluating BTI effects in SiC MOSFETs Habersat, Daniel B.
2018
81 C p. 121-126
artikel
30 Mechanical stress effects on electrical breakdown of freestanding GaN thin films Wang, Tun
2018
81 C p. 181-185
artikel
31 Modeling the impact of well contacts on SEE response with bias-dependent Single-Event compact model Ding, Lili
2018
81 C p. 337-341
artikel
32 On the origin of dynamic Ron in commercial GaN-on-Si HEMTs Karboyan, Serge
2018
81 C p. 306-311
artikel
33 Performance variation of dark current density-voltage characteristics for PID-affected monocrystalline silicon solar modules from the field Wang, He
2018
81 C p. 320-327
artikel
34 Prognostics of aluminum electrolytic capacitors using artificial neural network approach Khera, Neeraj
2018
81 C p. 328-336
artikel
35 Random vibration analysis of 3-Arc-Fan compliant interconnects Chung, Philip Y.
2018
81 C p. 7-21
artikel
36 Recovery behaviors in n-channel LTPS-TFTs under DC stress Yan, Wei
2018
81 C p. 117-120
artikel
37 Reliability study of fiber-coupled photodiode module for operation at 4K Bardalen, Eivind
2018
81 C p. 362-367
artikel
38 Risk of tin whiskers in the nuclear industry Huang, Chien-Ming
2018
81 C p. 22-30
artikel
39 Single-pulse avalanche mode operation of 10-kV/10-A SiC MOSFET Kelley, Mitchell D.
2018
81 C p. 174-180
artikel
40 Susceptibility of flash ADCs to electromagnetic interference Kennedy, Simon
2018
81 C p. 218-225
artikel
41 Temperature-dependent hole transport for pentacene thin-film transistors with a SiO2 gate dielectric modified by (NH4)2S x treatment Lin, Yow-Jon
2018
81 C p. 90-94
artikel
42 Thermal transient measurement and modelling of a power cycled flip-chip LED module Mitterhuber, Lisa
2018
81 C p. 373-380
artikel
43 Time-zero-variability and BTI impact on advanced FinFET device and circuit reliability Mukhopadhyay, Subhadeep
2018
81 C p. 226-231
artikel
44 Towards AND/XOR balanced synthesis: Logic circuits rewriting with XOR Háleček, Ivo
2018
81 C p. 274-286
artikel
45 Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs Sasaki, Hajime
2018
81 C p. 312-319
artikel
46 Using GA-SVM for defect inspection of flip chips based on vibration signals Li, Ke
2018
81 C p. 159-166
artikel
                             46 gevonden resultaten
 
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