nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
|
Kaczer, B. |
|
2018 |
81 |
C |
p. 186-194 |
artikel |
2 |
A comparative analysis of microstructural features, tensile properties and wettability of hypoperitectic and peritectic Sn-Sb solder alloys
|
Dias, Marcelino |
|
2018 |
81 |
C |
p. 150-158 |
artikel |
3 |
A fast and flexible HW/SW co-processing framework for Time-of-Flight 3D imaging
|
Druml, Norbert |
|
2018 |
81 |
C |
p. 64-76 |
artikel |
4 |
Analysis of low isolation problem in HMC using Ishikawa model: A case study
|
Jayaprasad, G. |
|
2018 |
81 |
C |
p. 195-200 |
artikel |
5 |
A new hermetic sealing method for ceramic package using nanosilver sintering technology
|
Zhang, Hao |
|
2018 |
81 |
C |
p. 143-149 |
artikel |
6 |
An improved reliability model for Si and GaN power FET
|
Golan, Gady |
|
2018 |
81 |
C |
p. 77-89 |
artikel |
7 |
An improved unscented particle filter approach for lithium-ion battery remaining useful life prediction
|
Zhang, Heng |
|
2018 |
81 |
C |
p. 288-298 |
artikel |
8 |
A review of NBTI mechanisms and models
|
Mahapatra, Souvik |
|
2018 |
81 |
C |
p. 127-135 |
artikel |
9 |
A review on discoloration and high accelerated testing of optical materials in LED based-products
|
Yazdan Mehr, M. |
|
2018 |
81 |
C |
p. 136-142 |
artikel |
10 |
Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance
|
Lenahan, P.M. |
|
2018 |
81 |
C |
p. 1-6 |
artikel |
11 |
Bias temperature instability in scaled CMOS technologies: A circuit perspective
|
Kerber, A. |
|
2018 |
81 |
C |
p. 31-40 |
artikel |
12 |
Considerations in printing conductive traces for high pulsed power applications
|
Aga, Roberto S. |
|
2018 |
81 |
C |
p. 342-351 |
artikel |
13 |
Controversial issues in negative bias temperature instability
|
Stathis, James H. |
|
2018 |
81 |
C |
p. 244-251 |
artikel |
14 |
Discovering and reducing defects in MIM capacitors
|
Roesch, William J. |
|
2018 |
81 |
C |
p. 299-305 |
artikel |
15 |
Dislocation assisted diffusion: A mechanism for growth of intermetallic compounds in copper ball bonds
|
Gholamirad, Maryam |
|
2018 |
81 |
C |
p. 210-217 |
artikel |
16 |
Editorial Board
|
|
|
2018 |
81 |
C |
p. ii |
artikel |
17 |
Effect of solder bump shapes on underfill flow in flip-chip encapsulation using analytical, numerical and PIV experimental approaches
|
Ng, Fei Chong |
|
2018 |
81 |
C |
p. 41-63 |
artikel |
18 |
Fast identification of true critical paths in sequential circuits
|
Ubar, Raimund |
|
2018 |
81 |
C |
p. 252-261 |
artikel |
19 |
Fault tolerant encoders for Single Error Correction and Double Adjacent Error Correction codes
|
Liu, Shanshan |
|
2018 |
81 |
C |
p. 167-173 |
artikel |
20 |
Foreword to the special issue on 20th IEEE international symposium on design and diagnostics of electronic circuits and systems (DDECS2017)
|
Zoran, Stamenkovic |
|
2018 |
81 |
C |
p. 287 |
artikel |
21 |
Heuristic Kalman optimized particle filter for remaining useful life prediction of lithium-ion battery
|
Duong, Pham Luu Trung |
|
2018 |
81 |
C |
p. 232-243 |
artikel |
22 |
Influence of rotating magnetic field on solidification microstructure and tensile properties of Sn-Bi lead-free solders
|
El-Daly, A.A. |
|
2018 |
81 |
C |
p. 352-361 |
artikel |
23 |
Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20nm modern integrated circuits
|
Ahn, W. |
|
2018 |
81 |
C |
p. 262-273 |
artikel |
24 |
Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices
|
Ma, Teng |
|
2018 |
81 |
C |
p. 112-116 |
artikel |
25 |
Investigation of BTI characteristics and its behavior on 10nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack
|
Jin, Minjung |
|
2018 |
81 |
C |
p. 201-209 |
artikel |
26 |
Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits
|
Guo, Shaofeng |
|
2018 |
81 |
C |
p. 101-111 |
artikel |
27 |
Investigations and detections on a new BEOL dielectric failure mechanism at advanced technologies
|
Chien, Wei-Ting Kary |
|
2018 |
81 |
C |
p. 368-372 |
artikel |
28 |
Lifetime of electret microphones by thermal degradation analysis via electroacoustic measurements
|
Nogueira, E. |
|
2018 |
81 |
C |
p. 95-100 |
artikel |
29 |
Measurement considerations for evaluating BTI effects in SiC MOSFETs
|
Habersat, Daniel B. |
|
2018 |
81 |
C |
p. 121-126 |
artikel |
30 |
Mechanical stress effects on electrical breakdown of freestanding GaN thin films
|
Wang, Tun |
|
2018 |
81 |
C |
p. 181-185 |
artikel |
31 |
Modeling the impact of well contacts on SEE response with bias-dependent Single-Event compact model
|
Ding, Lili |
|
2018 |
81 |
C |
p. 337-341 |
artikel |
32 |
On the origin of dynamic Ron in commercial GaN-on-Si HEMTs
|
Karboyan, Serge |
|
2018 |
81 |
C |
p. 306-311 |
artikel |
33 |
Performance variation of dark current density-voltage characteristics for PID-affected monocrystalline silicon solar modules from the field
|
Wang, He |
|
2018 |
81 |
C |
p. 320-327 |
artikel |
34 |
Prognostics of aluminum electrolytic capacitors using artificial neural network approach
|
Khera, Neeraj |
|
2018 |
81 |
C |
p. 328-336 |
artikel |
35 |
Random vibration analysis of 3-Arc-Fan compliant interconnects
|
Chung, Philip Y. |
|
2018 |
81 |
C |
p. 7-21 |
artikel |
36 |
Recovery behaviors in n-channel LTPS-TFTs under DC stress
|
Yan, Wei |
|
2018 |
81 |
C |
p. 117-120 |
artikel |
37 |
Reliability study of fiber-coupled photodiode module for operation at 4K
|
Bardalen, Eivind |
|
2018 |
81 |
C |
p. 362-367 |
artikel |
38 |
Risk of tin whiskers in the nuclear industry
|
Huang, Chien-Ming |
|
2018 |
81 |
C |
p. 22-30 |
artikel |
39 |
Single-pulse avalanche mode operation of 10-kV/10-A SiC MOSFET
|
Kelley, Mitchell D. |
|
2018 |
81 |
C |
p. 174-180 |
artikel |
40 |
Susceptibility of flash ADCs to electromagnetic interference
|
Kennedy, Simon |
|
2018 |
81 |
C |
p. 218-225 |
artikel |
41 |
Temperature-dependent hole transport for pentacene thin-film transistors with a SiO2 gate dielectric modified by (NH4)2S x treatment
|
Lin, Yow-Jon |
|
2018 |
81 |
C |
p. 90-94 |
artikel |
42 |
Thermal transient measurement and modelling of a power cycled flip-chip LED module
|
Mitterhuber, Lisa |
|
2018 |
81 |
C |
p. 373-380 |
artikel |
43 |
Time-zero-variability and BTI impact on advanced FinFET device and circuit reliability
|
Mukhopadhyay, Subhadeep |
|
2018 |
81 |
C |
p. 226-231 |
artikel |
44 |
Towards AND/XOR balanced synthesis: Logic circuits rewriting with XOR
|
Háleček, Ivo |
|
2018 |
81 |
C |
p. 274-286 |
artikel |
45 |
Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs
|
Sasaki, Hajime |
|
2018 |
81 |
C |
p. 312-319 |
artikel |
46 |
Using GA-SVM for defect inspection of flip chips based on vibration signals
|
Li, Ke |
|
2018 |
81 |
C |
p. 159-166 |
artikel |