nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Adaptive accelerated aging for 28nm HKMG technology
|
Patra, Devyani |
|
2018 |
80 |
C |
p. 149-154 |
artikel |
2 |
An exploration for the degradation behavior of 2-D electrostatic microscanners by accelerated lifetime test
|
Qiao, Dayong |
|
2018 |
80 |
C |
p. 284-293 |
artikel |
3 |
Applications of fracture mechanics to quantitative accelerated life testing of plastic encapsulated microelectronics
|
Evans, John W. |
|
2018 |
80 |
C |
p. 317-327 |
artikel |
4 |
As-grown-generation (AG) model of NBTI: A shift from fitting test data to prediction
|
Zhang, J.F. |
|
2018 |
80 |
C |
p. 109-123 |
artikel |
5 |
Border traps and bias-temperature instabilities in MOS devices
|
Fleetwood, D.M. |
|
2018 |
80 |
C |
p. 266-277 |
artikel |
6 |
Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors
|
Garros, Xavier |
|
2018 |
80 |
C |
p. 100-108 |
artikel |
7 |
Compact modeling of dynamic trap density evolution for predicting circuit-performance aging
|
Miura-Mattausch, M. |
|
2018 |
80 |
C |
p. 164-175 |
artikel |
8 |
Constitutive modelling on the whole-life uniaxial ratcheting behavior of sintered nano-scale silver paste at room and high temperatures
|
Chen, Gang |
|
2018 |
80 |
C |
p. 47-54 |
artikel |
9 |
Degradation mechanisms of AlGaN/GaN HEMTs under 800MeV Bi ions irradiation
|
Lei, Z.F. |
|
2018 |
80 |
C |
p. 312-316 |
artikel |
10 |
Design for reliability of generic sensor interface circuits
|
Heinssen, Sascha |
|
2018 |
80 |
C |
p. 184-197 |
artikel |
11 |
Design for Small Delay Test - A Simulation Study
|
Kampmann, Matthias |
|
2018 |
80 |
C |
p. 124-133 |
artikel |
12 |
Editorial Board
|
|
|
2018 |
80 |
C |
p. ii |
artikel |
13 |
Effect of microwave annealing on SOI MOSFETs: Post-metal annealing with low thermal budget
|
Hong, Eun-Ki |
|
2018 |
80 |
C |
p. 306-311 |
artikel |
14 |
Embedding a feedforward controller into the IGBT gate driver for turn-on transient improvement
|
Ghorbani, Hamidreza |
|
2018 |
80 |
C |
p. 230-240 |
artikel |
15 |
Empirical derivation of upper and lower bounds of NBTI aging for embedded cores
|
Chen, Yukai |
|
2018 |
80 |
C |
p. 294-305 |
artikel |
16 |
Estimating dynamic power consumption for memristor-based CiM architecture
|
Traiola, Marcello |
|
2018 |
80 |
C |
p. 241-248 |
artikel |
17 |
Experimental analysis of Sn-3.0Ag-0.5Cu solder joint board-level drop/vibration impact failure models after thermal/isothermal cycling
|
Gu, Jian |
|
2018 |
80 |
C |
p. 29-36 |
artikel |
18 |
Experimental and modeling study on viscosity of encapsulant for electronic packaging
|
Shan, Xiuyang |
|
2018 |
80 |
C |
p. 42-46 |
artikel |
19 |
Experimental study on the influence of junction temperature on the relationship between IGBT switching energy loss and device current
|
Das, Subhas Chandra |
|
2018 |
80 |
C |
p. 134-143 |
artikel |
20 |
Handling of transient and permanent faults in dynamically scheduled super-scalar processors
|
Mühlbauer, Felix |
|
2018 |
80 |
C |
p. 176-183 |
artikel |
21 |
Heat and mass transfer effects of laser soldering on growth behavior of interfacial intermetallic compounds in Sn/Cu and Sn-3.5Ag0.5/Cu joints
|
Kunwar, Anil |
|
2018 |
80 |
C |
p. 55-67 |
artikel |
22 |
High temperature storage reliability of palladium coated copper wire in different EFO current settings
|
Cheng, Pi-Ying |
|
2018 |
80 |
C |
p. 1-6 |
artikel |
23 |
Investigating the impact of the defect dynamic characteristics on the PBTI in the high-κ gate device
|
Liu, Xianqiang |
|
2018 |
80 |
C |
p. 24-28 |
artikel |
24 |
Microstructure evolution and mechanical strength evaluation in Ag/Sn/Cu TLP bonding interconnection during aging test
|
Guo, Qiang |
|
2018 |
80 |
C |
p. 144-148 |
artikel |
25 |
Microstructures and properties of Bi10Ag high temperature solder doped with Cu element
|
Yin, Limeng |
|
2018 |
80 |
C |
p. 79-84 |
artikel |
26 |
Modeling and simulation of the charge trapping component of BTI and RTS
|
Both, Thiago Hanna |
|
2018 |
80 |
C |
p. 278-283 |
artikel |
27 |
Modulation method for measuring thermal impedance components of semiconductor devices
|
Smirnov, V.I. |
|
2018 |
80 |
C |
p. 205-212 |
artikel |
28 |
Non-linear thermal simulation at system level: Compact modelling and experimental validation
|
Bernardoni, Mirko |
|
2018 |
80 |
C |
p. 223-229 |
artikel |
29 |
Positive and negative threshold voltage instabilities in GaN-based transistors
|
Meneghesso, G. |
|
2018 |
80 |
C |
p. 257-265 |
artikel |
30 |
Refined metastability characterization using a time-to-digital converter
|
Polzer, Thomas |
|
2018 |
80 |
C |
p. 91-99 |
artikel |
31 |
Reliability and failure analysis of SAC 105 and SAC 1205N lead-free solder alloys during drop test events
|
Wu, Mei-Ling |
|
2018 |
80 |
C |
p. 213-222 |
artikel |
32 |
Solderless bonding with nanoporous copper as interlayer for high-temperature applications
|
Sun, Siyu |
|
2018 |
80 |
C |
p. 198-204 |
artikel |
33 |
Study of proton radiation effect to row hammer fault in DDR4 SDRAMs
|
Lim, Chulseung |
|
2018 |
80 |
C |
p. 85-90 |
artikel |
34 |
Test response compaction method with improved detection and diagnostic abilities
|
Novák, Ondřej |
|
2018 |
80 |
C |
p. 249-256 |
artikel |
35 |
The dominant effect of c-axis orientation in tin on the electromigration behaviors in tricrystal Sn-3.0Ag-0.5Cu solder joints
|
Tian, Yu |
|
2018 |
80 |
C |
p. 7-13 |
artikel |
36 |
Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs
|
Aichinger, Thomas |
|
2018 |
80 |
C |
p. 68-78 |
artikel |
37 |
Ultra-low-voltage boosted driver for self-powered systems
|
Šovčík, Michal |
|
2018 |
80 |
C |
p. 155-163 |
artikel |
38 |
VDMOSFET HEF degradation modelling considering turn-around phenomenon
|
Ye, X.R. |
|
2018 |
80 |
C |
p. 37-41 |
artikel |
39 |
Warpage simulation for the reconstituted wafer used in fan-out wafer level packaging
|
Chiu, Tz-Cheng |
|
2018 |
80 |
C |
p. 14-23 |
artikel |