nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Advanced RBSOA analysis for advanced power BJTs
|
Busatto, Giovanni |
|
1996 |
76-77 |
7-8 |
p. 1077-1093 17 p. |
artikel |
2 |
A methodology for microcontroller signal frequency stress prediction
|
Hsieh, Sheng-Jen |
|
2005 |
76-77 |
7-8 |
p. 1243-1251 9 p. |
artikel |
3 |
An analytical threshold voltage model of NMOSFETs with hot-carrier induced interface charge effect
|
Ho, C.S. |
|
2005 |
76-77 |
7-8 |
p. 1144-1149 6 p. |
artikel |
4 |
An investigation of electrical and structural properties of Ni-germanosilicided Schottky diode
|
Saha, A.R. |
|
2005 |
76-77 |
7-8 |
p. 1154-1160 7 p. |
artikel |
5 |
Announcement
|
|
|
1996 |
76-77 |
7-8 |
p. 1139- 1 p. |
artikel |
6 |
A review of hot-carrier degradation mechanisms in MOSFETs
|
Acovic, Alexander |
|
1996 |
76-77 |
7-8 |
p. 845-869 25 p. |
artikel |
7 |
Bipolar mechanisms present in short channel SOI-MOSFET transistors
|
Janczyk, G. |
|
2005 |
76-77 |
7-8 |
p. 1257-1263 7 p. |
artikel |
8 |
Blue shift and mirror degradation in InGaAs GaAs strained quantum well lasers
|
Serra, L. |
|
1996 |
76-77 |
7-8 |
p. 1095-1105 11 p. |
artikel |
9 |
Breakdown of thin gate silicon dioxide films—A review
|
Nafría, M. |
|
1996 |
76-77 |
7-8 |
p. 871-905 35 p. |
artikel |
10 |
Built-in self-test and diagnostic support for safety critical microsystems
|
Olbrich, T. |
|
1996 |
76-77 |
7-8 |
p. 1125-1136 12 p. |
artikel |
11 |
Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics
|
Mizubayashi, Wataru |
|
2005 |
76-77 |
7-8 |
p. 1041-1050 10 p. |
artikel |
12 |
Chip-packaging interaction: a critical concern for Cu/low k packaging
|
Wang, Guotao |
|
2005 |
76-77 |
7-8 |
p. 1079-1093 15 p. |
artikel |
13 |
Conduction mechanisms and an evidence for phonon-assisted conduction process in thin high-k Hf x Ti y Si z O films
|
Paskaleva, A. |
|
2005 |
76-77 |
7-8 |
p. 1124-1133 10 p. |
artikel |
14 |
Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs
|
Kelly, D.Q. |
|
2005 |
76-77 |
7-8 |
p. 1033-1040 8 p. |
artikel |
15 |
Copper interconnect electromigration behaviors in various structures and lifetime improvement by cap/dielectric interface treatment
|
Lin, M.H. |
|
2005 |
76-77 |
7-8 |
p. 1061-1078 18 p. |
artikel |
16 |
Determination of self-heating and thermal resistance in polycrystalline and bulk silicon resistors by DC measurements
|
Sauter, Martin |
|
2005 |
76-77 |
7-8 |
p. 1187-1193 7 p. |
artikel |
17 |
Development of process modeling methodology for flip chip on flex interconnections with non-conductive adhesives
|
Zhang, Xiaowu |
|
2005 |
76-77 |
7-8 |
p. 1215-1221 7 p. |
artikel |
18 |
Diagnosis in submicron integrated circuits by electric force microscopy
|
Böhm, C. |
|
1996 |
76-77 |
7-8 |
p. 1113-1118 6 p. |
artikel |
19 |
Diagnostics of the quality of MOSFETs
|
Vandamme, E.P. |
|
1996 |
76-77 |
7-8 |
p. 1107-1112 6 p. |
artikel |
20 |
Dynamic NBTI lifetime model for inverter-like waveform
|
Tan, Shyue Seng |
|
2005 |
76-77 |
7-8 |
p. 1115-1118 4 p. |
artikel |
21 |
Editorial
|
Stojadinović, Ninoslav |
|
1996 |
76-77 |
7-8 |
p. 843-844 2 p. |
artikel |
22 |
Effect of localized traps on the anomalous behavior of the transconductance in nanocrystalline TFTs
|
Estrada, M. |
|
2005 |
76-77 |
7-8 |
p. 1161-1166 6 p. |
artikel |
23 |
Electrical and radiation tests of thin tunnel oxides
|
Paccagnella, A. |
|
1996 |
76-77 |
7-8 |
p. 1033-1044 12 p. |
artikel |
24 |
Electrical properties of highly reliable 32Mb FRAM with advanced capacitor technology
|
Song, Y.J. |
|
2005 |
76-77 |
7-8 |
p. 1150-1153 4 p. |
artikel |
25 |
Electromigration failure of contacts and vias in sub-micron integrated circuit metallizations
|
Oates, Anthony S. |
|
1996 |
76-77 |
7-8 |
p. 925-953 29 p. |
artikel |
26 |
Electromigration in Al based stripes: Low frequency noise measurements and MTF tests
|
Bagnoli, P.E. |
|
1996 |
76-77 |
7-8 |
p. 1045-1050 6 p. |
artikel |
27 |
Electrostatic discharge directly to the chip surface, caused by automatic post-wafer processing
|
Jacob, Peter |
|
2005 |
76-77 |
7-8 |
p. 1174-1180 7 p. |
artikel |
28 |
Electrostatic micromotor and its reliability
|
Zhang, Wenming |
|
2005 |
76-77 |
7-8 |
p. 1230-1242 13 p. |
artikel |
29 |
ESD issues for advanced CMOS technologies
|
Duvvury, Charvaka |
|
1996 |
76-77 |
7-8 |
p. 907-924 18 p. |
artikel |
30 |
Failure-analysis-based test chip design for quick yield improvement
|
Hashimoto, Chisato |
|
1996 |
76-77 |
7-8 |
p. 1063-1075 13 p. |
artikel |
31 |
Failures induced on analog integrated circuits by conveyed electromagnetic interferences: A review
|
Masetti, G. |
|
1996 |
76-77 |
7-8 |
p. 955-972 18 p. |
artikel |
32 |
High voltage applications and NBTI effects of DT-pMOSFETS with reverse Schottky substrate contacts
|
Lee, Yao-Jen |
|
2005 |
76-77 |
7-8 |
p. 1119-1123 5 p. |
artikel |
33 |
Implementation, analysis and performance evaluation of the IRP replacement policy
|
Jaragh, Mansour |
|
2005 |
76-77 |
7-8 |
p. 1264-1269 6 p. |
artikel |
34 |
Improving reliability of thick film initiators for automotive applications based on FE-analyses
|
Smetana, W. |
|
2005 |
76-77 |
7-8 |
p. 1194-1201 8 p. |
artikel |
35 |
Lateral punch-through TVS devices for on-chip protection in low-voltage applications
|
Urresti, J. |
|
2005 |
76-77 |
7-8 |
p. 1181-1186 6 p. |
artikel |
36 |
List of reviewers
|
|
|
1996 |
76-77 |
7-8 |
p. 1137- 1 p. |
artikel |
37 |
Modeling of NBTI saturation effect and its impact on electric field dependence of the lifetime
|
Aono, H. |
|
2005 |
76-77 |
7-8 |
p. 1109-1114 6 p. |
artikel |
38 |
Modelling considerations and development of upper limits of stress conditions for dielectric breakdown projections
|
Vollertsen, R.-P. |
|
1996 |
76-77 |
7-8 |
p. 1019-1031 13 p. |
artikel |
39 |
Monolithic active pixel sensor realized in SOI technology—concept and verification
|
Niemiec, H. |
|
2005 |
76-77 |
7-8 |
p. 1202-1207 6 p. |
artikel |
40 |
New encapsulation development for fine pitch IC devices
|
Yao, Y.F. |
|
2005 |
76-77 |
7-8 |
p. 1222-1229 8 p. |
artikel |
41 |
[No title]
|
Stojcev, Mile |
|
2005 |
76-77 |
7-8 |
p. 1272- 1 p. |
artikel |
42 |
[No title]
|
Stojcev, Mile |
|
2005 |
76-77 |
7-8 |
p. 1270-1271 2 p. |
artikel |
43 |
[No title]
|
Stojcev, Mile |
|
2005 |
76-77 |
7-8 |
p. 1273-1274 2 p. |
artikel |
44 |
Optimizing the hot carrier reliability of N-LDMOS transistor arrays
|
Brisbin, Douglas |
|
2005 |
76-77 |
7-8 |
p. 1021-1032 12 p. |
artikel |
45 |
Plastic packages survive where hermetic packages fail
|
Sinnadurai, Nihal |
|
1996 |
76-77 |
7-8 |
p. 1001-1018 18 p. |
artikel |
46 |
Process improvement of 0.13μm Cu/Low K (Black DiamondTM) dual damascene interconnection
|
Li, H.Y. |
|
2005 |
76-77 |
7-8 |
p. 1134-1143 10 p. |
artikel |
47 |
Pseudomorphic HEMTs reliability with scattering and noise parameters
|
Conti, P. |
|
1996 |
76-77 |
7-8 |
p. 1119-1124 6 p. |
artikel |
48 |
Reliability of erasing operation in NOR-Flash memories
|
Chimenton, Andrea |
|
2005 |
76-77 |
7-8 |
p. 1094-1108 15 p. |
artikel |
49 |
Reliability of InGaAs InP based separate absorption grading multiplication avalanche photodiodes
|
Montangero, P. |
|
1996 |
76-77 |
7-8 |
p. 973-1000 28 p. |
artikel |
50 |
Reliability study of new SnZnAl lead-free solders used in CSP packages
|
Kitajima, Masayuki |
|
2005 |
76-77 |
7-8 |
p. 1208-1214 7 p. |
artikel |
51 |
Size effects on the DC characteristics and low frequency noise of double polysilicon NPN bipolar transistors
|
Valdaperez, Nicolas |
|
2005 |
76-77 |
7-8 |
p. 1167-1173 7 p. |
artikel |
52 |
Study on the RF Sputtered hydrogenated amorphous silicon–germanium thin films
|
Serényi, M. |
|
2005 |
76-77 |
7-8 |
p. 1252-1256 5 p. |
artikel |
53 |
The evolution of the microscopic damage in electromigration studied by multiple electrical measurements
|
Jone, B.K. |
|
1996 |
76-77 |
7-8 |
p. 1051-1062 12 p. |
artikel |
54 |
Threshold voltage instability characteristics of HfO2 dielectrics n-MOSFETs
|
Rhee, Se Jong |
|
2005 |
76-77 |
7-8 |
p. 1051-1060 10 p. |
artikel |