| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A challenge: to integrate and isolate
|
|
|
1967
|
6 |
4 |
p. 332-
1 p.
|
artikel
|
| 2 |
Advances in monolithic integrated circuits
|
|
|
1967
|
6 |
4 |
p. 328-
1 p.
|
artikel
|
| 3 |
Advances in the state-of-the-art of MOS device technology
|
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|
1967
|
6 |
4 |
p. 327-
1 p.
|
artikel
|
| 4 |
A highly desensitized, wide-band monolithic amplifier
|
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|
1967
|
6 |
4 |
p. 337-
1 p.
|
artikel
|
| 5 |
A new aspect of large-scale integration
|
|
|
1967
|
6 |
4 |
p. 327-
1 p.
|
artikel
|
| 6 |
A new receiving principle for FM receivers with integrated circuits
|
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|
1967
|
6 |
4 |
p. 336-
1 p.
|
artikel
|
| 7 |
A new type of diffusion pump boiler for ultrahigh vacuum use
|
|
|
1967
|
6 |
4 |
p. 333-
1 p.
|
artikel
|
| 8 |
A process for ceramic dielectric isolation for integrated circuits
|
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|
1967
|
6 |
4 |
p. 329-
1 p.
|
artikel
|
| 9 |
A summary of thin film deposition techniques
|
|
|
1967
|
6 |
4 |
p. 333-334
2 p.
|
artikel
|
| 10 |
Bias sputtering: its techniques and applications
|
|
|
1967
|
6 |
4 |
p. 336-
1 p.
|
artikel
|
| 11 |
Calculation of avalanche breakdown voltages of silicon p-n junctions
|
|
|
1967
|
6 |
4 |
p. 324-
1 p.
|
artikel
|
| 12 |
Compatibility in monolithic integrated circuits
|
|
|
1967
|
6 |
4 |
p. 327-
1 p.
|
artikel
|
| 13 |
Considerations in the utilization of semiconductor devices and integrated circuits
|
|
|
1967
|
6 |
4 |
p. 327-
1 p.
|
artikel
|
| 14 |
Contamination of aluminium bonds in integrated circuits
|
|
|
1967
|
6 |
4 |
p. 337-
1 p.
|
artikel
|
| 15 |
Critical estimate of reliability data of components and systems
|
|
|
1967
|
6 |
4 |
p. 323-
1 p.
|
artikel
|
| 16 |
Designing monolithic integrated circuits
|
|
|
1967
|
6 |
4 |
p. 328-
1 p.
|
artikel
|
| 17 |
Design of integrable desensitized frequency selective amplifiers
|
|
|
1967
|
6 |
4 |
p. 336-337
2 p.
|
artikel
|
| 18 |
Determining thermocompression bonding parameters by a friction technique
|
|
|
1967
|
6 |
4 |
p. 337-
1 p.
|
artikel
|
| 19 |
Diffusion in semiconductor materials with a vapor source
|
|
|
1967
|
6 |
4 |
p. 331-332
2 p.
|
artikel
|
| 20 |
Dislocations in silicon due to localized diffusions
|
|
|
1967
|
6 |
4 |
p. 324-
1 p.
|
artikel
|
| 21 |
Distributed effects in thin-film capacitors
|
Lucas, M.S.P.
|
|
1967
|
6 |
4 |
p. 269-276
8 p.
|
artikel
|
| 22 |
Effect of generation-recombination centers on the stress-dependence of Si p-n junction characteristics
|
|
|
1967
|
6 |
4 |
p. 331-
1 p.
|
artikel
|
| 23 |
Effect of surface fields on the breakdown voltage of planar silicon p-n junctions
|
|
|
1967
|
6 |
4 |
p. 324-325
2 p.
|
artikel
|
| 24 |
Effects of Fabrication parameters on structural and electronic properties of thin CdS and CdSe films
|
|
|
1967
|
6 |
4 |
p. 335-336
2 p.
|
artikel
|
| 25 |
Electron beam gun in an exploratory fabrication system
|
|
|
1967
|
6 |
4 |
p. 338-
1 p.
|
artikel
|
| 26 |
Electron-microscope replica study of epitaxial silocon nucleation on silicon
|
|
|
1967
|
6 |
4 |
p. 338-
1 p.
|
artikel
|
| 27 |
Evaluation of high vacuum pumps
|
|
|
1967
|
6 |
4 |
p. 334-
1 p.
|
artikel
|
| 28 |
Experimental study of the effect of junction curvature on breakdown voltage in Si
|
|
|
1967
|
6 |
4 |
p. 324-
1 p.
|
artikel
|
| 29 |
Fabrication of microstrip interconnections for semiconductor microwave integrated circuits
|
|
|
1967
|
6 |
4 |
p. 337-
1 p.
|
artikel
|
| 30 |
High vacuum systems for thin film applications
|
|
|
1967
|
6 |
4 |
p. 334-
1 p.
|
artikel
|
| 31 |
IC reliability—what does it cost?
|
|
|
1967
|
6 |
4 |
p. 326-
1 p.
|
artikel
|
| 32 |
Impurity interaction and damage in double diffused layers on silicon
|
|
|
1967
|
6 |
4 |
p. 325-
1 p.
|
artikel
|
| 33 |
Influence of mobility and lifetime variations on drift-field effects in silicon-junction devices
|
|
|
1967
|
6 |
4 |
p. 332-
1 p.
|
artikel
|
| 34 |
Infra-red radiometry of semiconductor devices
|
Peterman, David
|
|
1967
|
6 |
4 |
p. 307-312
6 p.
|
artikel
|
| 35 |
Infra-red techniques for the reliability enhancement of microelectronics
|
|
|
1967
|
6 |
4 |
p. 326-327
2 p.
|
artikel
|
| 36 |
Integrated computer circuits—past, present and future
|
|
|
1967
|
6 |
4 |
p. 328-
1 p.
|
artikel
|
| 37 |
Integrated selective amplifiers using frequency translation
|
|
|
1967
|
6 |
4 |
p. 336-
1 p.
|
artikel
|
| 38 |
Interface states and interface disorder in the Si-SiO2 system
|
|
|
1967
|
6 |
4 |
p. 330-
1 p.
|
artikel
|
| 39 |
Junction delineation by anodic oxidation in InSb (As, P)
|
|
|
1967
|
6 |
4 |
p. 329-
1 p.
|
artikel
|
| 40 |
Kinetics of the thermal oxidation of silicon in dry oxygen
|
|
|
1967
|
6 |
4 |
p. 331-
1 p.
|
artikel
|
| 41 |
Limitations in solid-state technology
|
|
|
1967
|
6 |
4 |
p. 328-
1 p.
|
artikel
|
| 42 |
Maintainability specs bothering you?
|
|
|
1967
|
6 |
4 |
p. 326-
1 p.
|
artikel
|
| 43 |
Measurement of high-field carrier drift velocities in silicon by a time-of-flight technique
|
|
|
1967
|
6 |
4 |
p. 330-
1 p.
|
artikel
|
| 44 |
Measurement of the drift velocity of holes in silicon at high-field strengths
|
|
|
1967
|
6 |
4 |
p. 329-330
2 p.
|
artikel
|
| 45 |
New dimensions in ICs through films of glass
|
|
|
1967
|
6 |
4 |
p. 327-
1 p.
|
artikel
|
| 46 |
On the reliability of electric contacts
|
|
|
1967
|
6 |
4 |
p. 323-
1 p.
|
artikel
|
| 47 |
Optical thickness measurement of SiO2–Si3N4 films on silicon
|
|
|
1967
|
6 |
4 |
p. 330-
1 p.
|
artikel
|
| 48 |
Performance and reliability of plated multilayer printed wiring joints
|
|
|
1967
|
6 |
4 |
p. 325-
1 p.
|
artikel
|
| 49 |
Performance assessment of condensation pumping
|
|
|
1967
|
6 |
4 |
p. 335-
1 p.
|
artikel
|
| 50 |
Plain talk about attribute sampling plans
|
|
|
1967
|
6 |
4 |
p. 323-
1 p.
|
artikel
|
| 51 |
P-N-P transistor stability
|
Jones, R.O.
|
|
1967
|
6 |
4 |
p. 277-283
7 p.
|
artikel
|
| 52 |
Polishing silicon wafers
|
|
|
1967
|
6 |
4 |
p. 331-
1 p.
|
artikel
|
| 53 |
Precision thin-film cermet resistors for integrated circuits
|
|
|
1967
|
6 |
4 |
p. 334-
1 p.
|
artikel
|
| 54 |
Properties of amorphous silicon nitride films
|
|
|
1967
|
6 |
4 |
p. 332-
1 p.
|
artikel
|
| 55 |
Properties of diffused resistors
|
|
|
1967
|
6 |
4 |
p. 329-
1 p.
|
artikel
|
| 56 |
Reactively sputtered silicon dioxide films
|
|
|
1967
|
6 |
4 |
p. 332-
1 p.
|
artikel
|
| 57 |
Reading and writing with electron beams
|
|
|
1967
|
6 |
4 |
p. 338-
1 p.
|
artikel
|
| 58 |
Reliability and drift characteristics of resistors
|
|
|
1967
|
6 |
4 |
p. 323-
1 p.
|
artikel
|
| 59 |
Reliability and standardization are compatible
|
|
|
1967
|
6 |
4 |
p. 323-
1 p.
|
artikel
|
| 60 |
Reliability investigations of components by non-linearity measurements
|
|
|
1967
|
6 |
4 |
p. 324-
1 p.
|
artikel
|
| 61 |
Reliability of directional transmission systems
|
|
|
1967
|
6 |
4 |
p. 326-
1 p.
|
artikel
|
| 62 |
Reliability of P.T.T. tubes
|
|
|
1967
|
6 |
4 |
p. 323-
1 p.
|
artikel
|
| 63 |
Removal of thin layers of n-type silicon by anodic oxidation
|
|
|
1967
|
6 |
4 |
p. 335-
1 p.
|
artikel
|
| 64 |
Self diffusion in intrinsic silicon
|
|
|
1967
|
6 |
4 |
p. 329-
1 p.
|
artikel
|
| 65 |
Semiconductor device developments: integrated circuits, Part 1—Construction, properties and applications
|
|
|
1967
|
6 |
4 |
p. 328-
1 p.
|
artikel
|
| 66 |
Si-GaP heterojunctions
|
|
|
1967
|
6 |
4 |
p. 330-
1 p.
|
artikel
|
| 67 |
Some applications of thin film circuits in electronic equipment
|
|
|
1967
|
6 |
4 |
p. 334-
1 p.
|
artikel
|
| 68 |
Some characteristics of triode ion pumps
|
|
|
1967
|
6 |
4 |
p. 334-
1 p.
|
artikel
|
| 69 |
Some results on operational integrated circuit reliability in a prototype data encoder
|
Shepertycki, T.H.
|
|
1967
|
6 |
4 |
p. 317-318
2 p.
|
artikel
|
| 70 |
Space-charge-limited current in silicon
|
|
|
1967
|
6 |
4 |
p. 331-
1 p.
|
artikel
|
| 71 |
Stabilization of MOS devices
|
|
|
1967
|
6 |
4 |
p. 324-
1 p.
|
artikel
|
| 72 |
Stacking faults in steam-oxidizing silicon
|
|
|
1967
|
6 |
4 |
p. 325-
1 p.
|
artikel
|
| 73 |
Statistical methods in reliability analysis
|
|
|
1967
|
6 |
4 |
p. 326-
1 p.
|
artikel
|
| 74 |
Synthesis of complex electronic functions by solid state bulk effects
|
|
|
1967
|
6 |
4 |
p. 327-328
2 p.
|
artikel
|
| 75 |
Temperature dependence of inversion-layer frequency response in silicon
|
|
|
1967
|
6 |
4 |
p. 329-
1 p.
|
artikel
|
| 76 |
The capacitance of p-n heterojunctions including the effects of interface states
|
|
|
1967
|
6 |
4 |
p. 332-
1 p.
|
artikel
|
| 77 |
The compatibility of value engineering and configuration management
|
|
|
1967
|
6 |
4 |
p. 326-
1 p.
|
artikel
|
| 78 |
The effects of the main variables in the percussive arc welding of electrical interconnections
|
|
|
1967
|
6 |
4 |
p. 326-
1 p.
|
artikel
|
| 79 |
The isolation of a failure mode in silicon planar transistors caused by organic residues associated with aluminium wire
|
Scarbrough, R.J.D.
|
|
1967
|
6 |
4 |
p. 319-321
3 p.
|
artikel
|
| 80 |
Theory and practice of RF sputtering
|
|
|
1967
|
6 |
4 |
p. 336-
1 p.
|
artikel
|
| 81 |
The performance assessment of sputter ion pumps
|
|
|
1967
|
6 |
4 |
p. 335-
1 p.
|
artikel
|
| 82 |
The properties of Viton “A” elastomers—IV. The influence of solid-gas interaction at Viton “A” and stainless steel surfaces on gas evolution rates in high vacuum
|
|
|
1967
|
6 |
4 |
p. 332-333
2 p.
|
artikel
|
| 83 |
Thermal conductivity of silicon, germanium, III–V compounds and III–V alloys
|
|
|
1967
|
6 |
4 |
p. 331-
1 p.
|
artikel
|
| 84 |
The trend toward monolithic subsystems
|
Wolf, Helmut
|
|
1967
|
6 |
4 |
p. 285-292
8 p.
|
artikel
|
| 85 |
Thin-film silicon-on-sapphire deep depletion MOS transistors
|
|
|
1967
|
6 |
4 |
p. 333-
1 p.
|
artikel
|
| 86 |
Topology of thin film RC circuits
|
|
|
1967
|
6 |
4 |
p. 333-
1 p.
|
artikel
|
| 87 |
Using silicones in a low cost, high reliability microcircuit package
|
|
|
1967
|
6 |
4 |
p. 336-
1 p.
|
artikel
|
| 88 |
Vacuum-deposited thin-film capacitors of silicon monoxide
|
Van Steensel, K.
|
|
1967
|
6 |
4 |
p. 261-262
2 p.
|
artikel
|
| 89 |
Visual inspection standards for parallel-gap soldered joints
|
|
|
1967
|
6 |
4 |
p. 325-
1 p.
|
artikel
|
| 90 |
X-ray measurement of elastic strain and lattice constant of diffused silicon
|
|
|
1967
|
6 |
4 |
p. 330-
1 p.
|
artikel
|
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