| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accelerated degradation data of SiC MOSFETs for lifetime and Remaining Useful Life assessment
|
Santini, T.
|
|
2014
|
54 |
9-10 |
p. 1718-1723
6 p.
|
artikel
|
| 2 |
A comprehensive study of the application of the EOP techniques on bipolar devices
|
Rebaï, M.M.
|
|
2014
|
54 |
9-10 |
p. 2088-2092
5 p.
|
artikel
|
| 3 |
Acoustic detection of micro-cracks in small electronic devices
|
Reuther, G.M.
|
|
2014
|
54 |
9-10 |
p. 2118-2122
5 p.
|
artikel
|
| 4 |
A design tool to study the impact of mission-profile on the reliability of SiC-based PV-inverter devices
|
Sintamarean, N.C.
|
|
2014
|
54 |
9-10 |
p. 1655-1660
6 p.
|
artikel
|
| 5 |
Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures
|
Simon-Najasek, Michél
|
|
2014
|
54 |
9-10 |
p. 1785-1789
5 p.
|
artikel
|
| 6 |
Advanced methods for mechanical and structural characterization of nanoscale materials for 3D IC integration
|
Sander, C.
|
|
2014
|
54 |
9-10 |
p. 1959-1962
4 p.
|
artikel
|
| 7 |
A fast reliability assessment method for Si MEMS based microcantilever beams
|
Rafiee, P.
|
|
2014
|
54 |
9-10 |
p. 2180-2184
5 p.
|
artikel
|
| 8 |
Air-stable, high current density, solution-processable, amorphous organic rectifying diodes (ORDs) for low-cost fabrication of flexible passive low frequency RFID tags
|
Bose, I.
|
|
2014
|
54 |
9-10 |
p. 1643-1647
5 p.
|
artikel
|
| 9 |
Analysis of an ESD failure mechanism on a SiC MESFET
|
Phulpin, T.
|
|
2014
|
54 |
9-10 |
p. 2217-2221
5 p.
|
artikel
|
| 10 |
Analytical stress characterization after different chip separation methods
|
Fuegl, M.
|
|
2014
|
54 |
9-10 |
p. 1735-1740
6 p.
|
artikel
|
| 11 |
A quantitative study of Phosphorous implantation damage on the thick gate oxide of the 28nm node
|
Wan, Xinggong
|
|
2014
|
54 |
9-10 |
p. 2306-2309
4 p.
|
artikel
|
| 12 |
As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability
|
Tang, B.J.
|
|
2014
|
54 |
9-10 |
p. 1675-1679
5 p.
|
artikel
|
| 13 |
Assessment methodology of the lateral migration component in data retention of 3D SONOS memories
|
Liu, Lifang
|
|
2014
|
54 |
9-10 |
p. 1697-1701
5 p.
|
artikel
|
| 14 |
Assessment of mechanical reliability of surface mounted capacitor by an accelerated shear fatigue test technique
|
Magnien, J.
|
|
2014
|
54 |
9-10 |
p. 1764-1769
6 p.
|
artikel
|
| 15 |
Assessment of read disturb immunity in conducting bridge memory devices – A thermodynamic perspective
|
Raghavan, Nagarajan
|
|
2014
|
54 |
9-10 |
p. 2295-2299
5 p.
|
artikel
|
| 16 |
A study of deposition conditions on charging properties of PECVD silicon nitride films for MEMS capacitive switches
|
Koutsoureli, M.
|
|
2014
|
54 |
9-10 |
p. 2159-2163
5 p.
|
artikel
|
| 17 |
A study of through package vias in a glass interposer for multifunctional and miniaturized systems
|
El Amrani, A.
|
|
2014
|
54 |
9-10 |
p. 1972-1976
5 p.
|
artikel
|
| 18 |
A study on electrochemical effects in external capacitor packages
|
Preu, H.
|
|
2014
|
54 |
9-10 |
p. 2023-2027
5 p.
|
artikel
|
| 19 |
A three-scale approach to the numerical simulation of metallic bonding for MEMS packaging
|
Ghisi, Aldo
|
|
2014
|
54 |
9-10 |
p. 2039-2043
5 p.
|
artikel
|
| 20 |
Backside spectroscopic photon emission microscopy using intensified silicon CCD
|
Glowacki, A.
|
|
2014
|
54 |
9-10 |
p. 2105-2108
4 p.
|
artikel
|
| 21 |
Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses
|
Wang, Y.
|
|
2014
|
54 |
9-10 |
p. 1774-1778
5 p.
|
artikel
|
| 22 |
Comparative soft error evaluation of layout cells in FinFET technology
|
Artola, L.
|
|
2014
|
54 |
9-10 |
p. 2300-2305
6 p.
|
artikel
|
| 23 |
Comparison of in-situ measurement techniques of solder joint reliability under thermo-mechanical stresses
|
Duan, N.
|
|
2014
|
54 |
9-10 |
p. 1753-1757
5 p.
|
artikel
|
| 24 |
Comparison of temperature limits for Trench silicon IGBT technologies for medium power applications
|
Perpiñà, X.
|
|
2014
|
54 |
9-10 |
p. 1839-1844
6 p.
|
artikel
|
| 25 |
Conduction instability of amorphous InGaZnO thin-film transistors under constant drain current stress
|
Kang, Jung Han
|
|
2014
|
54 |
9-10 |
p. 2164-2166
3 p.
|
artikel
|
| 26 |
Copper wire interconnect reliability evaluation using in-situ High Temperature Storage Life (HTSL) tests
|
Mavinkurve, A.
|
|
2014
|
54 |
9-10 |
p. 1661-1665
5 p.
|
artikel
|
| 27 |
Crosstalk in monolithic GaN-on-Silicon power electronic devices
|
Unni, V.
|
|
2014
|
54 |
9-10 |
p. 2242-2247
6 p.
|
artikel
|
| 28 |
Crystallographic-orientation-dependent GIDL current in Tri-gate MOSFETs under hot carrier stress
|
Lee, Jae Hoon
|
|
2014
|
54 |
9-10 |
p. 2315-2318
4 p.
|
artikel
|
| 29 |
Defects evolution involving interface dispersion approaches in high-k/metal-gate deep-submicron CMOS
|
Abdul Wahab, Y.
|
|
2014
|
54 |
9-10 |
p. 2334-2338
5 p.
|
artikel
|
| 30 |
Degradation analysis and current collapse imaging of AlGaN/GaN HEMTs by measurement of electric field-induced optical second-harmonic generation
|
Katsuno, T.
|
|
2014
|
54 |
9-10 |
p. 2227-2231
5 p.
|
artikel
|
| 31 |
Degradation behavior in upstream/downstream via test structures
|
Kludt, J.
|
|
2014
|
54 |
9-10 |
p. 1724-1728
5 p.
|
artikel
|
| 32 |
3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions
|
Riccio, Michele
|
|
2014
|
54 |
9-10 |
p. 1845-1850
6 p.
|
artikel
|
| 33 |
Description of supercapacitor performance degradation rate during thermal cycling under constant voltage ageing test
|
Ayadi, M.
|
|
2014
|
54 |
9-10 |
p. 1944-1948
5 p.
|
artikel
|
| 34 |
Dielectric strength and thermal performance of PCB-embedded power electronics
|
Randoll, R.
|
|
2014
|
54 |
9-10 |
p. 1872-1876
5 p.
|
artikel
|
| 35 |
Dispersion study of DC and Low Frequency Noise in SiGe:C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications
|
Seif, M.
|
|
2014
|
54 |
9-10 |
p. 2171-2175
5 p.
|
artikel
|
| 36 |
Editorial
|
Boit, Christian
|
|
2014
|
54 |
9-10 |
p. 1637-
1 p.
|
artikel
|
| 37 |
Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors
|
Chevtchenko, S.A.
|
|
2014
|
54 |
9-10 |
p. 2191-2195
5 p.
|
artikel
|
| 38 |
Efficient and flexible Focused Ion Beam micromachining of Solid Immersion Lenses in various bulk semiconductor materials – An adaptive calibration algorithm
|
Scholz, P.
|
|
2014
|
54 |
9-10 |
p. 1794-1797
4 p.
|
artikel
|
| 39 |
Electromigration reliability of open TSV structures
|
Zisser, W.H.
|
|
2014
|
54 |
9-10 |
p. 2133-2137
5 p.
|
artikel
|
| 40 |
Electro Optical Terahertz Pulse Reflectometry, a non destructive technique to localize defects on various type of package
|
Reverdy, A.
|
|
2014
|
54 |
9-10 |
p. 2075-2080
6 p.
|
artikel
|
| 41 |
Eliminating infant mortality in metallized film capacitors by defect detection
|
McCluskey, F.P.
|
|
2014
|
54 |
9-10 |
p. 1818-1822
5 p.
|
artikel
|
| 42 |
Empirical BEOL-TDDB evaluation based on I(t)-trace analysis
|
Aubel, O.
|
|
2014
|
54 |
9-10 |
p. 1671-1674
4 p.
|
artikel
|
| 43 |
Energy distribution of positive charges in high-k dielectric
|
Hatta, S.W.M.
|
|
2014
|
54 |
9-10 |
p. 2329-2333
5 p.
|
artikel
|
| 44 |
ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms
|
Dal Lago, M.
|
|
2014
|
54 |
9-10 |
p. 2138-2141
4 p.
|
artikel
|
| 45 |
Evaluating board level solder interconnects reliability using vibration test methods
|
Liu, Y.
|
|
2014
|
54 |
9-10 |
p. 2053-2057
5 p.
|
artikel
|
| 46 |
Evaluation new corner stress relief structure layout for high robust metallization
|
Hein, V.
|
|
2014
|
54 |
9-10 |
p. 1977-1981
5 p.
|
artikel
|
| 47 |
Exact 3D simulation of Scanning Electron Microscopy images of semiconductor devices in the presence of electric and magnetic fields
|
Ciappa, Mauro
|
|
2014
|
54 |
9-10 |
p. 2081-2087
7 p.
|
artikel
|
| 48 |
Exploring the limits of scanning electron microscopy for the metrology of critical dimensions of photoresist structures in the nanometer range
|
Ciappa, Mauro
|
|
2014
|
54 |
9-10 |
p. 2123-2127
5 p.
|
artikel
|
| 49 |
Failure signatures on 0.25μm GaN HEMTs for high-power RF applications
|
Stocco, A.
|
|
2014
|
54 |
9-10 |
p. 2237-2241
5 p.
|
artikel
|
| 50 |
FIB-induced electro-optical alterations in a DFB InP laser diode
|
Mura, G.
|
|
2014
|
54 |
9-10 |
p. 2151-2153
3 p.
|
artikel
|
| 51 |
Focused ion beam contact to non-volatile memory cells
|
Helfmeier, Clemens
|
|
2014
|
54 |
9-10 |
p. 1798-1801
4 p.
|
artikel
|
| 52 |
Fretting corrosion: Analysis of the failure mechanism for low voltage drives applications
|
Mengotti, E.
|
|
2014
|
54 |
9-10 |
p. 2109-2114
6 p.
|
artikel
|
| 53 |
HCS degradation of 5nm oxide high-voltage PLDMOS
|
Olk, C.
|
|
2014
|
54 |
9-10 |
p. 1883-1886
4 p.
|
artikel
|
| 54 |
High temperature degradation of palladium coated copper bond wires
|
Krinke, J.C.
|
|
2014
|
54 |
9-10 |
p. 1995-1999
5 p.
|
artikel
|
| 55 |
High temperature reliability of electrically conductive adhesive attached temperature sensors on flexible polyimide substrates
|
Lahokallio, S.
|
|
2014
|
54 |
9-10 |
p. 2017-2022
6 p.
|
artikel
|
| 56 |
Hot carrier and PBTI induced degradation in silicon nanowire gate-all-around SONOS MOSFETs
|
Choi, Jin Hyung
|
|
2014
|
54 |
9-10 |
p. 2325-2328
4 p.
|
artikel
|
| 57 |
Impact of active thermal management on power electronics design
|
Andresen, M.
|
|
2014
|
54 |
9-10 |
p. 1935-1939
5 p.
|
artikel
|
| 58 |
Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories
|
Della Marca, V.
|
|
2014
|
54 |
9-10 |
p. 2262-2265
4 p.
|
artikel
|
| 59 |
Impact of gate drive voltage on avalanche robustness of trench IGBTs
|
Riccio, M.
|
|
2014
|
54 |
9-10 |
p. 1828-1832
5 p.
|
artikel
|
| 60 |
Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO2 on reliability of SiO x interfacial layer
|
Shubhakar, K.
|
|
2014
|
54 |
9-10 |
p. 1712-1717
6 p.
|
artikel
|
| 61 |
Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS
|
Dutertre, J.M.
|
|
2014
|
54 |
9-10 |
p. 2289-2294
6 p.
|
artikel
|
| 62 |
Improving the FE simulation of molded packages using warpage measurements
|
Huber, S.
|
|
2014
|
54 |
9-10 |
p. 1862-1866
5 p.
|
artikel
|
| 63 |
Influence of dicing damages on the thermo-mechanical reliability of bare-chip assemblies
|
Steiert, M.
|
|
2014
|
54 |
9-10 |
p. 1686-1691
6 p.
|
artikel
|
| 64 |
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs
|
Rossetto, I.
|
|
2014
|
54 |
9-10 |
p. 2248-2252
5 p.
|
artikel
|
| 65 |
Influence of mobile ion in organic material used in semiconductor devices
|
Tan, Y.Y.
|
|
2014
|
54 |
9-10 |
p. 2034-2038
5 p.
|
artikel
|
| 66 |
Influence of temperature and dose rate on the degradation of BiCMOS operational amplifiers during total ionizing dose testing
|
Petrov, A.S.
|
|
2014
|
54 |
9-10 |
p. 1745-1748
4 p.
|
artikel
|
| 67 |
Inside front cover - Editorial board
|
|
|
2014
|
54 |
9-10 |
p. IFC-
1 p.
|
artikel
|
| 68 |
Interface microstructure effects in Au thermosonic ball bonding contacts by high reliability wire materials
|
März, B.
|
|
2014
|
54 |
9-10 |
p. 2000-2005
6 p.
|
artikel
|
| 69 |
Joining and package technology for 175°C Tj increasing reliability in automotive applications
|
Dietrich, Peter
|
|
2014
|
54 |
9-10 |
p. 1901-1905
5 p.
|
artikel
|
| 70 |
Lifetime modeling and simulation of power modules for hybrid electrical/electrical vehicles
|
Thoben, M.
|
|
2014
|
54 |
9-10 |
p. 1806-1812
7 p.
|
artikel
|
| 71 |
Local thickness and composition analysis of TEM lamellae in the FIB
|
Lang, C.
|
|
2014
|
54 |
9-10 |
p. 1790-1793
4 p.
|
artikel
|
| 72 |
Low temperature FIB cross section: Application to indium micro bumps
|
Dantas de Morais, L.
|
|
2014
|
54 |
9-10 |
p. 1802-1805
4 p.
|
artikel
|
| 73 |
Magnetic Field Imaging for non destructive 3D IC testing
|
Gaudestad, J.
|
|
2014
|
54 |
9-10 |
p. 2093-2098
6 p.
|
artikel
|
| 74 |
Metallized polymer film capacitors ageing law based on capacitance degradation
|
Makdessi, M.
|
|
2014
|
54 |
9-10 |
p. 1823-1827
5 p.
|
artikel
|
| 75 |
Microstructure of Sn–1Ag–0.5Cu solder alloy bearing Fe under salt spray test
|
Nordin, N.I.M.
|
|
2014
|
54 |
9-10 |
p. 2044-2047
4 p.
|
artikel
|
| 76 |
Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130nm technology p-channel transistors
|
Rott, Gunnar Andreas
|
|
2014
|
54 |
9-10 |
p. 2310-2314
5 p.
|
artikel
|
| 77 |
Monolithic integrable capacitive humidity sensing method for material characterization of dielectric thin films
|
Rückerl, A.
|
|
2014
|
54 |
9-10 |
p. 1741-1744
4 p.
|
artikel
|
| 78 |
NBTI degradation in STI-based LDMOSFETs
|
He, Yandong
|
|
2014
|
54 |
9-10 |
p. 1940-1943
4 p.
|
artikel
|
| 79 |
Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations
|
Tang, B.J.
|
|
2014
|
54 |
9-10 |
p. 2258-2261
4 p.
|
artikel
|
| 80 |
Overload robust IGBT design for SSCB application
|
Supono, I.
|
|
2014
|
54 |
9-10 |
p. 1906-1910
5 p.
|
artikel
|
| 81 |
Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits
|
Autran, J.L.
|
|
2014
|
54 |
9-10 |
p. 2278-2283
6 p.
|
artikel
|
| 82 |
Pattern image enhancement by extended depth of field
|
Chef, S.
|
|
2014
|
54 |
9-10 |
p. 2099-2104
6 p.
|
artikel
|
| 83 |
Performance and reliability trade-offs for high-κ RRAM
|
Raghavan, Nagarajan
|
|
2014
|
54 |
9-10 |
p. 2253-2257
5 p.
|
artikel
|
| 84 |
Performance drifts of N-MOSFETs under pulsed RF life test
|
Belaïd, M.A.
|
|
2014
|
54 |
9-10 |
p. 1851-1855
5 p.
|
artikel
|
| 85 |
Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes
|
Hu, J.
|
|
2014
|
54 |
9-10 |
p. 2196-2199
4 p.
|
artikel
|
| 86 |
Physics-of-failure assessment methodology for power electronic systems
|
Squiller, D.
|
|
2014
|
54 |
9-10 |
p. 1680-1685
6 p.
|
artikel
|
| 87 |
Power grid redundant path contribution in system on chip (SoC) robustness against electromigration
|
Ouattara, Boukary
|
|
2014
|
54 |
9-10 |
p. 1702-1706
5 p.
|
artikel
|
| 88 |
Precise nanofabrication with multiple ion beams for advanced circuit edit
|
Wu, Huimeng
|
|
2014
|
54 |
9-10 |
p. 1779-1784
6 p.
|
artikel
|
| 89 |
Prediction of supercapacitors floating ageing with surface electrode interface based ageing law
|
German, R.
|
|
2014
|
54 |
9-10 |
p. 1813-1817
5 p.
|
artikel
|
| 90 |
Predictive evaluation of electrical characteristics of sub-22nm FinFET technologies under device geometry variations
|
Meinhardt, C.
|
|
2014
|
54 |
9-10 |
p. 2319-2324
6 p.
|
artikel
|
| 91 |
Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memory
|
Raghavan, Nagarajan
|
|
2014
|
54 |
9-10 |
p. 1729-1734
6 p.
|
artikel
|
| 92 |
Protective coatings of electronics under harsh thermal shock
|
Pippola, J.
|
|
2014
|
54 |
9-10 |
p. 2048-2052
5 p.
|
artikel
|
| 93 |
Proton induced trapping effect on space compatible GaN HEMTs
|
Stocco, A.
|
|
2014
|
54 |
9-10 |
p. 2213-2216
4 p.
|
artikel
|
| 94 |
Qualification procedure for moisture in embedded capacitors
|
Frémont, Hélène
|
|
2014
|
54 |
9-10 |
p. 2013-2016
4 p.
|
artikel
|
| 95 |
Quantitative Scanning Microwave Microscopy: A calibration flow
|
Schweinböck, T.
|
|
2014
|
54 |
9-10 |
p. 2070-2074
5 p.
|
artikel
|
| 96 |
Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation
|
Munteanu, D.
|
|
2014
|
54 |
9-10 |
p. 2284-2288
5 p.
|
artikel
|
| 97 |
μ-Raman spectroscopy for stress analysis in high power silicon devices
|
Kociniewski, T.
|
|
2014
|
54 |
9-10 |
p. 1770-1773
4 p.
|
artikel
|
| 98 |
Reliability challenges for barrier/liner system in high aspect ratio through silicon vias
|
Li, Yunlong
|
|
2014
|
54 |
9-10 |
p. 1949-1952
4 p.
|
artikel
|
| 99 |
Reliability enhancement by integrated liquid cooling in power IGBT modules for hybrid and electric vehicles
|
Wang, Y.
|
|
2014
|
54 |
9-10 |
p. 1911-1915
5 p.
|
artikel
|
| 100 |
Reliability of adhesive joined thinned chips on flexible substrates under humid conditions
|
Frisk, Laura
|
|
2014
|
54 |
9-10 |
p. 2058-2063
6 p.
|
artikel
|
| 101 |
Reliability of Cu nanoparticle joint for high temperature power electronics
|
Ishizaki, T.
|
|
2014
|
54 |
9-10 |
p. 1867-1871
5 p.
|
artikel
|
| 102 |
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Reliability of thick Al wire: A study of the effects of wire bonding parameters on thermal cycling degradation rate using non-destructive methods
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Reliability of Wafer Level Chip Scale Packages
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Risk and reliability assessment about a manufacturing issue in a power MOSFET for automotive applications
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Robust Electromigration reliability through engineering optimization
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Robustness Validation – A physics of failure based approach to qualification
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Robust snubberless soft-switching power converter using SiC power MOSFETs and bespoke thermal design
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RTN distribution comparison for bulk, FDSOI and FinFETs devices
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Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage
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SEM-based nanoprobing on 32 and 28nm CMOS devices challenges for semiconductor failure analysis
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Short-circuit protection for an IGBT with detecting the gate voltage and gate charge
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Signal noise perturbation on automotive mixed-mode semiconductor device generated by graded substrate defect
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Single-parameter model for the post-breakdown conduction characteristics of HoTiO x -based MIM capacitors
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Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs
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Sn whisker evaluations in 3D microbumped structures
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Solder void position and size effects on electro thermal behaviour of MOSFET transistors in forward bias conditions
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Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress
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Stress analyses of high spatial resolution on TSV and BEoL structures
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Stress-induced degradation of p- and n-type organic thin-film-transistors in the ON and OFF states
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Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part II
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Study of EM void nucleation and mechanic relaxation effects
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Study of thermal cycling and temperature aging on PbSnAg die attach solder joints for high power modules
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Study of the UBM to copper interface robustness of solder bumps in flip chip packages
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Temperature dependent optoelectronic properties of a non-intentionally created cleaved-coupled-cavity laser
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Temperature effects on the ruggedness of SiC Schottky diodes under surge current
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The degradation of multi-crystalline silicon solar cells after damp heat tests
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The effect of gate overlap on the device degradation in IGZO thin film transistors
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The effects of etching and deposition on the performance and stress evolution of open through silicon vias
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The influence of liners with Ti, Ta or Ru finish on thin Cu films
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Thermal and mechanical effects of voids within flip chip soldering in LED packages
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Thermal-aware design and fault analysis of a DC/DC parallel resonant converter
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Thermal damage in SiC Schottky diodes induced by SE heavy ions
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Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage
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Total ionizing dose response of fluorine implanted Silicon-On-Insulator buried oxide
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Traps localization and analysis in GaN HEMTs
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Turn-off instabilities in large area IGBTs
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UV LEDs reliability tests for fluoro-sensing sensor application
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Vacuum quality evaluation for uncooled micro bolometer thermal imager sensors
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6 p.
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Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices
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Raghavan, Nagarajan
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2014
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p. 2266-2271
6 p.
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Voltage scaling and aging effects on soft error rate in SRAM-based FPGAs
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Kastensmidt, F.L.
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5 p.
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