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                             141 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Accelerated degradation data of SiC MOSFETs for lifetime and Remaining Useful Life assessment Santini, T.
2014
54 9-10 p. 1718-1723
6 p.
artikel
2 A comprehensive study of the application of the EOP techniques on bipolar devices Rebaï, M.M.
2014
54 9-10 p. 2088-2092
5 p.
artikel
3 Acoustic detection of micro-cracks in small electronic devices Reuther, G.M.
2014
54 9-10 p. 2118-2122
5 p.
artikel
4 A design tool to study the impact of mission-profile on the reliability of SiC-based PV-inverter devices Sintamarean, N.C.
2014
54 9-10 p. 1655-1660
6 p.
artikel
5 Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures Simon-Najasek, Michél
2014
54 9-10 p. 1785-1789
5 p.
artikel
6 Advanced methods for mechanical and structural characterization of nanoscale materials for 3D IC integration Sander, C.
2014
54 9-10 p. 1959-1962
4 p.
artikel
7 A fast reliability assessment method for Si MEMS based microcantilever beams Rafiee, P.
2014
54 9-10 p. 2180-2184
5 p.
artikel
8 Air-stable, high current density, solution-processable, amorphous organic rectifying diodes (ORDs) for low-cost fabrication of flexible passive low frequency RFID tags Bose, I.
2014
54 9-10 p. 1643-1647
5 p.
artikel
9 Analysis of an ESD failure mechanism on a SiC MESFET Phulpin, T.
2014
54 9-10 p. 2217-2221
5 p.
artikel
10 Analytical stress characterization after different chip separation methods Fuegl, M.
2014
54 9-10 p. 1735-1740
6 p.
artikel
11 A quantitative study of Phosphorous implantation damage on the thick gate oxide of the 28nm node Wan, Xinggong
2014
54 9-10 p. 2306-2309
4 p.
artikel
12 As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability Tang, B.J.
2014
54 9-10 p. 1675-1679
5 p.
artikel
13 Assessment methodology of the lateral migration component in data retention of 3D SONOS memories Liu, Lifang
2014
54 9-10 p. 1697-1701
5 p.
artikel
14 Assessment of mechanical reliability of surface mounted capacitor by an accelerated shear fatigue test technique Magnien, J.
2014
54 9-10 p. 1764-1769
6 p.
artikel
15 Assessment of read disturb immunity in conducting bridge memory devices – A thermodynamic perspective Raghavan, Nagarajan
2014
54 9-10 p. 2295-2299
5 p.
artikel
16 A study of deposition conditions on charging properties of PECVD silicon nitride films for MEMS capacitive switches Koutsoureli, M.
2014
54 9-10 p. 2159-2163
5 p.
artikel
17 A study of through package vias in a glass interposer for multifunctional and miniaturized systems El Amrani, A.
2014
54 9-10 p. 1972-1976
5 p.
artikel
18 A study on electrochemical effects in external capacitor packages Preu, H.
2014
54 9-10 p. 2023-2027
5 p.
artikel
19 A three-scale approach to the numerical simulation of metallic bonding for MEMS packaging Ghisi, Aldo
2014
54 9-10 p. 2039-2043
5 p.
artikel
20 Backside spectroscopic photon emission microscopy using intensified silicon CCD Glowacki, A.
2014
54 9-10 p. 2105-2108
4 p.
artikel
21 Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses Wang, Y.
2014
54 9-10 p. 1774-1778
5 p.
artikel
22 Comparative soft error evaluation of layout cells in FinFET technology Artola, L.
2014
54 9-10 p. 2300-2305
6 p.
artikel
23 Comparison of in-situ measurement techniques of solder joint reliability under thermo-mechanical stresses Duan, N.
2014
54 9-10 p. 1753-1757
5 p.
artikel
24 Comparison of temperature limits for Trench silicon IGBT technologies for medium power applications Perpiñà, X.
2014
54 9-10 p. 1839-1844
6 p.
artikel
25 Conduction instability of amorphous InGaZnO thin-film transistors under constant drain current stress Kang, Jung Han
2014
54 9-10 p. 2164-2166
3 p.
artikel
26 Copper wire interconnect reliability evaluation using in-situ High Temperature Storage Life (HTSL) tests Mavinkurve, A.
2014
54 9-10 p. 1661-1665
5 p.
artikel
27 Crosstalk in monolithic GaN-on-Silicon power electronic devices Unni, V.
2014
54 9-10 p. 2242-2247
6 p.
artikel
28 Crystallographic-orientation-dependent GIDL current in Tri-gate MOSFETs under hot carrier stress Lee, Jae Hoon
2014
54 9-10 p. 2315-2318
4 p.
artikel
29 Defects evolution involving interface dispersion approaches in high-k/metal-gate deep-submicron CMOS Abdul Wahab, Y.
2014
54 9-10 p. 2334-2338
5 p.
artikel
30 Degradation analysis and current collapse imaging of AlGaN/GaN HEMTs by measurement of electric field-induced optical second-harmonic generation Katsuno, T.
2014
54 9-10 p. 2227-2231
5 p.
artikel
31 Degradation behavior in upstream/downstream via test structures Kludt, J.
2014
54 9-10 p. 1724-1728
5 p.
artikel
32 3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions Riccio, Michele
2014
54 9-10 p. 1845-1850
6 p.
artikel
33 Description of supercapacitor performance degradation rate during thermal cycling under constant voltage ageing test Ayadi, M.
2014
54 9-10 p. 1944-1948
5 p.
artikel
34 Dielectric strength and thermal performance of PCB-embedded power electronics Randoll, R.
2014
54 9-10 p. 1872-1876
5 p.
artikel
35 Dispersion study of DC and Low Frequency Noise in SiGe:C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications Seif, M.
2014
54 9-10 p. 2171-2175
5 p.
artikel
36 Editorial Boit, Christian
2014
54 9-10 p. 1637-
1 p.
artikel
37 Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors Chevtchenko, S.A.
2014
54 9-10 p. 2191-2195
5 p.
artikel
38 Efficient and flexible Focused Ion Beam micromachining of Solid Immersion Lenses in various bulk semiconductor materials – An adaptive calibration algorithm Scholz, P.
2014
54 9-10 p. 1794-1797
4 p.
artikel
39 Electromigration reliability of open TSV structures Zisser, W.H.
2014
54 9-10 p. 2133-2137
5 p.
artikel
40 Electro Optical Terahertz Pulse Reflectometry, a non destructive technique to localize defects on various type of package Reverdy, A.
2014
54 9-10 p. 2075-2080
6 p.
artikel
41 Eliminating infant mortality in metallized film capacitors by defect detection McCluskey, F.P.
2014
54 9-10 p. 1818-1822
5 p.
artikel
42 Empirical BEOL-TDDB evaluation based on I(t)-trace analysis Aubel, O.
2014
54 9-10 p. 1671-1674
4 p.
artikel
43 Energy distribution of positive charges in high-k dielectric Hatta, S.W.M.
2014
54 9-10 p. 2329-2333
5 p.
artikel
44 ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms Dal Lago, M.
2014
54 9-10 p. 2138-2141
4 p.
artikel
45 Evaluating board level solder interconnects reliability using vibration test methods Liu, Y.
2014
54 9-10 p. 2053-2057
5 p.
artikel
46 Evaluation new corner stress relief structure layout for high robust metallization Hein, V.
2014
54 9-10 p. 1977-1981
5 p.
artikel
47 Exact 3D simulation of Scanning Electron Microscopy images of semiconductor devices in the presence of electric and magnetic fields Ciappa, Mauro
2014
54 9-10 p. 2081-2087
7 p.
artikel
48 Exploring the limits of scanning electron microscopy for the metrology of critical dimensions of photoresist structures in the nanometer range Ciappa, Mauro
2014
54 9-10 p. 2123-2127
5 p.
artikel
49 Failure signatures on 0.25μm GaN HEMTs for high-power RF applications Stocco, A.
2014
54 9-10 p. 2237-2241
5 p.
artikel
50 FIB-induced electro-optical alterations in a DFB InP laser diode Mura, G.
2014
54 9-10 p. 2151-2153
3 p.
artikel
51 Focused ion beam contact to non-volatile memory cells Helfmeier, Clemens
2014
54 9-10 p. 1798-1801
4 p.
artikel
52 Fretting corrosion: Analysis of the failure mechanism for low voltage drives applications Mengotti, E.
2014
54 9-10 p. 2109-2114
6 p.
artikel
53 HCS degradation of 5nm oxide high-voltage PLDMOS Olk, C.
2014
54 9-10 p. 1883-1886
4 p.
artikel
54 High temperature degradation of palladium coated copper bond wires Krinke, J.C.
2014
54 9-10 p. 1995-1999
5 p.
artikel
55 High temperature reliability of electrically conductive adhesive attached temperature sensors on flexible polyimide substrates Lahokallio, S.
2014
54 9-10 p. 2017-2022
6 p.
artikel
56 Hot carrier and PBTI induced degradation in silicon nanowire gate-all-around SONOS MOSFETs Choi, Jin Hyung
2014
54 9-10 p. 2325-2328
4 p.
artikel
57 Impact of active thermal management on power electronics design Andresen, M.
2014
54 9-10 p. 1935-1939
5 p.
artikel
58 Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories Della Marca, V.
2014
54 9-10 p. 2262-2265
4 p.
artikel
59 Impact of gate drive voltage on avalanche robustness of trench IGBTs Riccio, M.
2014
54 9-10 p. 1828-1832
5 p.
artikel
60 Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO2 on reliability of SiO x interfacial layer Shubhakar, K.
2014
54 9-10 p. 1712-1717
6 p.
artikel
61 Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS Dutertre, J.M.
2014
54 9-10 p. 2289-2294
6 p.
artikel
62 Improving the FE simulation of molded packages using warpage measurements Huber, S.
2014
54 9-10 p. 1862-1866
5 p.
artikel
63 Influence of dicing damages on the thermo-mechanical reliability of bare-chip assemblies Steiert, M.
2014
54 9-10 p. 1686-1691
6 p.
artikel
64 Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs Rossetto, I.
2014
54 9-10 p. 2248-2252
5 p.
artikel
65 Influence of mobile ion in organic material used in semiconductor devices Tan, Y.Y.
2014
54 9-10 p. 2034-2038
5 p.
artikel
66 Influence of temperature and dose rate on the degradation of BiCMOS operational amplifiers during total ionizing dose testing Petrov, A.S.
2014
54 9-10 p. 1745-1748
4 p.
artikel
67 Inside front cover - Editorial board 2014
54 9-10 p. IFC-
1 p.
artikel
68 Interface microstructure effects in Au thermosonic ball bonding contacts by high reliability wire materials März, B.
2014
54 9-10 p. 2000-2005
6 p.
artikel
69 Joining and package technology for 175°C Tj increasing reliability in automotive applications Dietrich, Peter
2014
54 9-10 p. 1901-1905
5 p.
artikel
70 Lifetime modeling and simulation of power modules for hybrid electrical/electrical vehicles Thoben, M.
2014
54 9-10 p. 1806-1812
7 p.
artikel
71 Local thickness and composition analysis of TEM lamellae in the FIB Lang, C.
2014
54 9-10 p. 1790-1793
4 p.
artikel
72 Low temperature FIB cross section: Application to indium micro bumps Dantas de Morais, L.
2014
54 9-10 p. 1802-1805
4 p.
artikel
73 Magnetic Field Imaging for non destructive 3D IC testing Gaudestad, J.
2014
54 9-10 p. 2093-2098
6 p.
artikel
74 Metallized polymer film capacitors ageing law based on capacitance degradation Makdessi, M.
2014
54 9-10 p. 1823-1827
5 p.
artikel
75 Microstructure of Sn–1Ag–0.5Cu solder alloy bearing Fe under salt spray test Nordin, N.I.M.
2014
54 9-10 p. 2044-2047
4 p.
artikel
76 Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130nm technology p-channel transistors Rott, Gunnar Andreas
2014
54 9-10 p. 2310-2314
5 p.
artikel
77 Monolithic integrable capacitive humidity sensing method for material characterization of dielectric thin films Rückerl, A.
2014
54 9-10 p. 1741-1744
4 p.
artikel
78 NBTI degradation in STI-based LDMOSFETs He, Yandong
2014
54 9-10 p. 1940-1943
4 p.
artikel
79 Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations Tang, B.J.
2014
54 9-10 p. 2258-2261
4 p.
artikel
80 Overload robust IGBT design for SSCB application Supono, I.
2014
54 9-10 p. 1906-1910
5 p.
artikel
81 Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits Autran, J.L.
2014
54 9-10 p. 2278-2283
6 p.
artikel
82 Pattern image enhancement by extended depth of field Chef, S.
2014
54 9-10 p. 2099-2104
6 p.
artikel
83 Performance and reliability trade-offs for high-κ RRAM Raghavan, Nagarajan
2014
54 9-10 p. 2253-2257
5 p.
artikel
84 Performance drifts of N-MOSFETs under pulsed RF life test Belaïd, M.A.
2014
54 9-10 p. 1851-1855
5 p.
artikel
85 Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes Hu, J.
2014
54 9-10 p. 2196-2199
4 p.
artikel
86 Physics-of-failure assessment methodology for power electronic systems Squiller, D.
2014
54 9-10 p. 1680-1685
6 p.
artikel
87 Power grid redundant path contribution in system on chip (SoC) robustness against electromigration Ouattara, Boukary
2014
54 9-10 p. 1702-1706
5 p.
artikel
88 Precise nanofabrication with multiple ion beams for advanced circuit edit Wu, Huimeng
2014
54 9-10 p. 1779-1784
6 p.
artikel
89 Prediction of supercapacitors floating ageing with surface electrode interface based ageing law German, R.
2014
54 9-10 p. 1813-1817
5 p.
artikel
90 Predictive evaluation of electrical characteristics of sub-22nm FinFET technologies under device geometry variations Meinhardt, C.
2014
54 9-10 p. 2319-2324
6 p.
artikel
91 Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memory Raghavan, Nagarajan
2014
54 9-10 p. 1729-1734
6 p.
artikel
92 Protective coatings of electronics under harsh thermal shock Pippola, J.
2014
54 9-10 p. 2048-2052
5 p.
artikel
93 Proton induced trapping effect on space compatible GaN HEMTs Stocco, A.
2014
54 9-10 p. 2213-2216
4 p.
artikel
94 Qualification procedure for moisture in embedded capacitors Frémont, Hélène
2014
54 9-10 p. 2013-2016
4 p.
artikel
95 Quantitative Scanning Microwave Microscopy: A calibration flow Schweinböck, T.
2014
54 9-10 p. 2070-2074
5 p.
artikel
96 Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation Munteanu, D.
2014
54 9-10 p. 2284-2288
5 p.
artikel
97 μ-Raman spectroscopy for stress analysis in high power silicon devices Kociniewski, T.
2014
54 9-10 p. 1770-1773
4 p.
artikel
98 Reliability challenges for barrier/liner system in high aspect ratio through silicon vias Li, Yunlong
2014
54 9-10 p. 1949-1952
4 p.
artikel
99 Reliability enhancement by integrated liquid cooling in power IGBT modules for hybrid and electric vehicles Wang, Y.
2014
54 9-10 p. 1911-1915
5 p.
artikel
100 Reliability of adhesive joined thinned chips on flexible substrates under humid conditions Frisk, Laura
2014
54 9-10 p. 2058-2063
6 p.
artikel
101 Reliability of Cu nanoparticle joint for high temperature power electronics Ishizaki, T.
2014
54 9-10 p. 1867-1871
5 p.
artikel
102 Reliability of ESD protection devices designed in a 3D technology Courivaud, B.
2014
54 9-10 p. 2272-2277
6 p.
artikel
103 Reliability of thick Al wire: A study of the effects of wire bonding parameters on thermal cycling degradation rate using non-destructive methods Arjmand, E.
2014
54 9-10 p. 2006-2012
7 p.
artikel
104 Reliability of Wafer Level Chip Scale Packages Rongen, R.
2014
54 9-10 p. 1988-1994
7 p.
artikel
105 Risk and reliability assessment about a manufacturing issue in a power MOSFET for automotive applications Bergès, C.
2014
54 9-10 p. 1887-1890
4 p.
artikel
106 Robust Electromigration reliability through engineering optimization Ng, Wee Loon
2014
54 9-10 p. 1666-1670
5 p.
artikel
107 Robustness Validation – A physics of failure based approach to qualification Kanert, W.
2014
54 9-10 p. 1648-1654
7 p.
artikel
108 Robust snubberless soft-switching power converter using SiC power MOSFETs and bespoke thermal design Giuliani, F.
2014
54 9-10 p. 1916-1920
5 p.
artikel
109 RTN distribution comparison for bulk, FDSOI and FinFETs devices Gerrer, L.
2014
54 9-10 p. 1749-1752
4 p.
artikel
110 Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage Doering, S.
2014
54 9-10 p. 2128-2132
5 p.
artikel
111 SEM-based nanoprobing on 32 and 28nm CMOS devices challenges for semiconductor failure analysis Paul, Erik
2014
54 9-10 p. 2115-2117
3 p.
artikel
112 Short-circuit protection for an IGBT with detecting the gate voltage and gate charge Hasegawa, K.
2014
54 9-10 p. 1897-1900
4 p.
artikel
113 Signal noise perturbation on automotive mixed-mode semiconductor device generated by graded substrate defect Weber, Y.
2014
54 9-10 p. 2064-2069
6 p.
artikel
114 Single-parameter model for the post-breakdown conduction characteristics of HoTiO x -based MIM capacitors Blasco, J.
2014
54 9-10 p. 1707-1711
5 p.
artikel
115 Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs Fayyaz, A.
2014
54 9-10 p. 2185-2190
6 p.
artikel
116 Sn whisker evaluations in 3D microbumped structures Vakanas, G.P.
2014
54 9-10 p. 1982-1987
6 p.
artikel
117 Solder void position and size effects on electro thermal behaviour of MOSFET transistors in forward bias conditions Tran, S.H.
2014
54 9-10 p. 1921-1926
6 p.
artikel
118 Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress Wu, Tian-Li
2014
54 9-10 p. 2232-2236
5 p.
artikel
119 Stress analyses of high spatial resolution on TSV and BEoL structures Vogel, D.
2014
54 9-10 p. 1963-1968
6 p.
artikel
120 Stress-induced degradation of p- and n-type organic thin-film-transistors in the ON and OFF states Wrachien, N.
2014
54 9-10 p. 1638-1642
5 p.
artikel
121 Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part II Takaishi, J.
2014
54 9-10 p. 1891-1896
6 p.
artikel
122 Study of EM void nucleation and mechanic relaxation effects Marti, G.
2014
54 9-10 p. 1692-1696
5 p.
artikel
123 Study of thermal cycling and temperature aging on PbSnAg die attach solder joints for high power modules Dugal, F.
2014
54 9-10 p. 1856-1861
6 p.
artikel
124 Study of the UBM to copper interface robustness of solder bumps in flip chip packages Dreybrodt, J.
2014
54 9-10 p. 1969-1971
3 p.
artikel
125 Temperature dependent optoelectronic properties of a non-intentionally created cleaved-coupled-cavity laser Neitzert, H.C.
2014
54 9-10 p. 2142-2146
5 p.
artikel
126 Temperature effects on the ruggedness of SiC Schottky diodes under surge current León, J.
2014
54 9-10 p. 2207-2212
6 p.
artikel
127 The degradation of multi-crystalline silicon solar cells after damp heat tests Oh, Wonwook
2014
54 9-10 p. 2176-2179
4 p.
artikel
128 The effect of gate overlap on the device degradation in IGZO thin film transistors Kim, Dae Hyun
2014
54 9-10 p. 2167-2170
4 p.
artikel
129 The effects of etching and deposition on the performance and stress evolution of open through silicon vias Filipovic, Lado
2014
54 9-10 p. 1953-1958
6 p.
artikel
130 The influence of liners with Ti, Ta or Ru finish on thin Cu films Gross, David
2014
54 9-10 p. 1877-1882
6 p.
artikel
131 Thermal and mechanical effects of voids within flip chip soldering in LED packages Liu, Yang
2014
54 9-10 p. 2028-2033
6 p.
artikel
132 Thermal-aware design and fault analysis of a DC/DC parallel resonant converter De Falco, G.
2014
54 9-10 p. 1833-1838
6 p.
artikel
133 Thermal damage in SiC Schottky diodes induced by SE heavy ions Abbate, C.
2014
54 9-10 p. 2200-2206
7 p.
artikel
134 Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage De Santi, C.
2014
54 9-10 p. 2147-2150
4 p.
artikel
135 Total ionizing dose response of fluorine implanted Silicon-On-Insulator buried oxide Potter, Kenneth
2014
54 9-10 p. 2339-2343
5 p.
artikel
136 Traps localization and analysis in GaN HEMTs Chini, A.
2014
54 9-10 p. 2222-2226
5 p.
artikel
137 Turn-off instabilities in large area IGBTs Abbate, C.
2014
54 9-10 p. 1927-1934
8 p.
artikel
138 UV LEDs reliability tests for fluoro-sensing sensor application Arques-Orobon, F.J.
2014
54 9-10 p. 2154-2158
5 p.
artikel
139 Vacuum quality evaluation for uncooled micro bolometer thermal imager sensors Elßner, Michael
2014
54 9-10 p. 1758-1763
6 p.
artikel
140 Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices Raghavan, Nagarajan
2014
54 9-10 p. 2266-2271
6 p.
artikel
141 Voltage scaling and aging effects on soft error rate in SRAM-based FPGAs Kastensmidt, F.L.
2014
54 9-10 p. 2344-2348
5 p.
artikel
                             141 gevonden resultaten
 
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