nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Accelerated degradation data of SiC MOSFETs for lifetime and Remaining Useful Life assessment
|
Santini, T. |
|
2014 |
54 |
9-10 |
p. 1718-1723 6 p. |
artikel |
2 |
A comprehensive study of the application of the EOP techniques on bipolar devices
|
Rebaï, M.M. |
|
2014 |
54 |
9-10 |
p. 2088-2092 5 p. |
artikel |
3 |
Acoustic detection of micro-cracks in small electronic devices
|
Reuther, G.M. |
|
2014 |
54 |
9-10 |
p. 2118-2122 5 p. |
artikel |
4 |
A design tool to study the impact of mission-profile on the reliability of SiC-based PV-inverter devices
|
Sintamarean, N.C. |
|
2014 |
54 |
9-10 |
p. 1655-1660 6 p. |
artikel |
5 |
Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures
|
Simon-Najasek, Michél |
|
2014 |
54 |
9-10 |
p. 1785-1789 5 p. |
artikel |
6 |
Advanced methods for mechanical and structural characterization of nanoscale materials for 3D IC integration
|
Sander, C. |
|
2014 |
54 |
9-10 |
p. 1959-1962 4 p. |
artikel |
7 |
A fast reliability assessment method for Si MEMS based microcantilever beams
|
Rafiee, P. |
|
2014 |
54 |
9-10 |
p. 2180-2184 5 p. |
artikel |
8 |
Air-stable, high current density, solution-processable, amorphous organic rectifying diodes (ORDs) for low-cost fabrication of flexible passive low frequency RFID tags
|
Bose, I. |
|
2014 |
54 |
9-10 |
p. 1643-1647 5 p. |
artikel |
9 |
Analysis of an ESD failure mechanism on a SiC MESFET
|
Phulpin, T. |
|
2014 |
54 |
9-10 |
p. 2217-2221 5 p. |
artikel |
10 |
Analytical stress characterization after different chip separation methods
|
Fuegl, M. |
|
2014 |
54 |
9-10 |
p. 1735-1740 6 p. |
artikel |
11 |
A quantitative study of Phosphorous implantation damage on the thick gate oxide of the 28nm node
|
Wan, Xinggong |
|
2014 |
54 |
9-10 |
p. 2306-2309 4 p. |
artikel |
12 |
As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability
|
Tang, B.J. |
|
2014 |
54 |
9-10 |
p. 1675-1679 5 p. |
artikel |
13 |
Assessment methodology of the lateral migration component in data retention of 3D SONOS memories
|
Liu, Lifang |
|
2014 |
54 |
9-10 |
p. 1697-1701 5 p. |
artikel |
14 |
Assessment of mechanical reliability of surface mounted capacitor by an accelerated shear fatigue test technique
|
Magnien, J. |
|
2014 |
54 |
9-10 |
p. 1764-1769 6 p. |
artikel |
15 |
Assessment of read disturb immunity in conducting bridge memory devices – A thermodynamic perspective
|
Raghavan, Nagarajan |
|
2014 |
54 |
9-10 |
p. 2295-2299 5 p. |
artikel |
16 |
A study of deposition conditions on charging properties of PECVD silicon nitride films for MEMS capacitive switches
|
Koutsoureli, M. |
|
2014 |
54 |
9-10 |
p. 2159-2163 5 p. |
artikel |
17 |
A study of through package vias in a glass interposer for multifunctional and miniaturized systems
|
El Amrani, A. |
|
2014 |
54 |
9-10 |
p. 1972-1976 5 p. |
artikel |
18 |
A study on electrochemical effects in external capacitor packages
|
Preu, H. |
|
2014 |
54 |
9-10 |
p. 2023-2027 5 p. |
artikel |
19 |
A three-scale approach to the numerical simulation of metallic bonding for MEMS packaging
|
Ghisi, Aldo |
|
2014 |
54 |
9-10 |
p. 2039-2043 5 p. |
artikel |
20 |
Backside spectroscopic photon emission microscopy using intensified silicon CCD
|
Glowacki, A. |
|
2014 |
54 |
9-10 |
p. 2105-2108 4 p. |
artikel |
21 |
Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses
|
Wang, Y. |
|
2014 |
54 |
9-10 |
p. 1774-1778 5 p. |
artikel |
22 |
Comparative soft error evaluation of layout cells in FinFET technology
|
Artola, L. |
|
2014 |
54 |
9-10 |
p. 2300-2305 6 p. |
artikel |
23 |
Comparison of in-situ measurement techniques of solder joint reliability under thermo-mechanical stresses
|
Duan, N. |
|
2014 |
54 |
9-10 |
p. 1753-1757 5 p. |
artikel |
24 |
Comparison of temperature limits for Trench silicon IGBT technologies for medium power applications
|
Perpiñà, X. |
|
2014 |
54 |
9-10 |
p. 1839-1844 6 p. |
artikel |
25 |
Conduction instability of amorphous InGaZnO thin-film transistors under constant drain current stress
|
Kang, Jung Han |
|
2014 |
54 |
9-10 |
p. 2164-2166 3 p. |
artikel |
26 |
Copper wire interconnect reliability evaluation using in-situ High Temperature Storage Life (HTSL) tests
|
Mavinkurve, A. |
|
2014 |
54 |
9-10 |
p. 1661-1665 5 p. |
artikel |
27 |
Crosstalk in monolithic GaN-on-Silicon power electronic devices
|
Unni, V. |
|
2014 |
54 |
9-10 |
p. 2242-2247 6 p. |
artikel |
28 |
Crystallographic-orientation-dependent GIDL current in Tri-gate MOSFETs under hot carrier stress
|
Lee, Jae Hoon |
|
2014 |
54 |
9-10 |
p. 2315-2318 4 p. |
artikel |
29 |
Defects evolution involving interface dispersion approaches in high-k/metal-gate deep-submicron CMOS
|
Abdul Wahab, Y. |
|
2014 |
54 |
9-10 |
p. 2334-2338 5 p. |
artikel |
30 |
Degradation analysis and current collapse imaging of AlGaN/GaN HEMTs by measurement of electric field-induced optical second-harmonic generation
|
Katsuno, T. |
|
2014 |
54 |
9-10 |
p. 2227-2231 5 p. |
artikel |
31 |
Degradation behavior in upstream/downstream via test structures
|
Kludt, J. |
|
2014 |
54 |
9-10 |
p. 1724-1728 5 p. |
artikel |
32 |
3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions
|
Riccio, Michele |
|
2014 |
54 |
9-10 |
p. 1845-1850 6 p. |
artikel |
33 |
Description of supercapacitor performance degradation rate during thermal cycling under constant voltage ageing test
|
Ayadi, M. |
|
2014 |
54 |
9-10 |
p. 1944-1948 5 p. |
artikel |
34 |
Dielectric strength and thermal performance of PCB-embedded power electronics
|
Randoll, R. |
|
2014 |
54 |
9-10 |
p. 1872-1876 5 p. |
artikel |
35 |
Dispersion study of DC and Low Frequency Noise in SiGe:C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications
|
Seif, M. |
|
2014 |
54 |
9-10 |
p. 2171-2175 5 p. |
artikel |
36 |
Editorial
|
Boit, Christian |
|
2014 |
54 |
9-10 |
p. 1637- 1 p. |
artikel |
37 |
Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors
|
Chevtchenko, S.A. |
|
2014 |
54 |
9-10 |
p. 2191-2195 5 p. |
artikel |
38 |
Efficient and flexible Focused Ion Beam micromachining of Solid Immersion Lenses in various bulk semiconductor materials – An adaptive calibration algorithm
|
Scholz, P. |
|
2014 |
54 |
9-10 |
p. 1794-1797 4 p. |
artikel |
39 |
Electromigration reliability of open TSV structures
|
Zisser, W.H. |
|
2014 |
54 |
9-10 |
p. 2133-2137 5 p. |
artikel |
40 |
Electro Optical Terahertz Pulse Reflectometry, a non destructive technique to localize defects on various type of package
|
Reverdy, A. |
|
2014 |
54 |
9-10 |
p. 2075-2080 6 p. |
artikel |
41 |
Eliminating infant mortality in metallized film capacitors by defect detection
|
McCluskey, F.P. |
|
2014 |
54 |
9-10 |
p. 1818-1822 5 p. |
artikel |
42 |
Empirical BEOL-TDDB evaluation based on I(t)-trace analysis
|
Aubel, O. |
|
2014 |
54 |
9-10 |
p. 1671-1674 4 p. |
artikel |
43 |
Energy distribution of positive charges in high-k dielectric
|
Hatta, S.W.M. |
|
2014 |
54 |
9-10 |
p. 2329-2333 5 p. |
artikel |
44 |
ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms
|
Dal Lago, M. |
|
2014 |
54 |
9-10 |
p. 2138-2141 4 p. |
artikel |
45 |
Evaluating board level solder interconnects reliability using vibration test methods
|
Liu, Y. |
|
2014 |
54 |
9-10 |
p. 2053-2057 5 p. |
artikel |
46 |
Evaluation new corner stress relief structure layout for high robust metallization
|
Hein, V. |
|
2014 |
54 |
9-10 |
p. 1977-1981 5 p. |
artikel |
47 |
Exact 3D simulation of Scanning Electron Microscopy images of semiconductor devices in the presence of electric and magnetic fields
|
Ciappa, Mauro |
|
2014 |
54 |
9-10 |
p. 2081-2087 7 p. |
artikel |
48 |
Exploring the limits of scanning electron microscopy for the metrology of critical dimensions of photoresist structures in the nanometer range
|
Ciappa, Mauro |
|
2014 |
54 |
9-10 |
p. 2123-2127 5 p. |
artikel |
49 |
Failure signatures on 0.25μm GaN HEMTs for high-power RF applications
|
Stocco, A. |
|
2014 |
54 |
9-10 |
p. 2237-2241 5 p. |
artikel |
50 |
FIB-induced electro-optical alterations in a DFB InP laser diode
|
Mura, G. |
|
2014 |
54 |
9-10 |
p. 2151-2153 3 p. |
artikel |
51 |
Focused ion beam contact to non-volatile memory cells
|
Helfmeier, Clemens |
|
2014 |
54 |
9-10 |
p. 1798-1801 4 p. |
artikel |
52 |
Fretting corrosion: Analysis of the failure mechanism for low voltage drives applications
|
Mengotti, E. |
|
2014 |
54 |
9-10 |
p. 2109-2114 6 p. |
artikel |
53 |
HCS degradation of 5nm oxide high-voltage PLDMOS
|
Olk, C. |
|
2014 |
54 |
9-10 |
p. 1883-1886 4 p. |
artikel |
54 |
High temperature degradation of palladium coated copper bond wires
|
Krinke, J.C. |
|
2014 |
54 |
9-10 |
p. 1995-1999 5 p. |
artikel |
55 |
High temperature reliability of electrically conductive adhesive attached temperature sensors on flexible polyimide substrates
|
Lahokallio, S. |
|
2014 |
54 |
9-10 |
p. 2017-2022 6 p. |
artikel |
56 |
Hot carrier and PBTI induced degradation in silicon nanowire gate-all-around SONOS MOSFETs
|
Choi, Jin Hyung |
|
2014 |
54 |
9-10 |
p. 2325-2328 4 p. |
artikel |
57 |
Impact of active thermal management on power electronics design
|
Andresen, M. |
|
2014 |
54 |
9-10 |
p. 1935-1939 5 p. |
artikel |
58 |
Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories
|
Della Marca, V. |
|
2014 |
54 |
9-10 |
p. 2262-2265 4 p. |
artikel |
59 |
Impact of gate drive voltage on avalanche robustness of trench IGBTs
|
Riccio, M. |
|
2014 |
54 |
9-10 |
p. 1828-1832 5 p. |
artikel |
60 |
Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO2 on reliability of SiO x interfacial layer
|
Shubhakar, K. |
|
2014 |
54 |
9-10 |
p. 1712-1717 6 p. |
artikel |
61 |
Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS
|
Dutertre, J.M. |
|
2014 |
54 |
9-10 |
p. 2289-2294 6 p. |
artikel |
62 |
Improving the FE simulation of molded packages using warpage measurements
|
Huber, S. |
|
2014 |
54 |
9-10 |
p. 1862-1866 5 p. |
artikel |
63 |
Influence of dicing damages on the thermo-mechanical reliability of bare-chip assemblies
|
Steiert, M. |
|
2014 |
54 |
9-10 |
p. 1686-1691 6 p. |
artikel |
64 |
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs
|
Rossetto, I. |
|
2014 |
54 |
9-10 |
p. 2248-2252 5 p. |
artikel |
65 |
Influence of mobile ion in organic material used in semiconductor devices
|
Tan, Y.Y. |
|
2014 |
54 |
9-10 |
p. 2034-2038 5 p. |
artikel |
66 |
Influence of temperature and dose rate on the degradation of BiCMOS operational amplifiers during total ionizing dose testing
|
Petrov, A.S. |
|
2014 |
54 |
9-10 |
p. 1745-1748 4 p. |
artikel |
67 |
Inside front cover - Editorial board
|
|
|
2014 |
54 |
9-10 |
p. IFC- 1 p. |
artikel |
68 |
Interface microstructure effects in Au thermosonic ball bonding contacts by high reliability wire materials
|
März, B. |
|
2014 |
54 |
9-10 |
p. 2000-2005 6 p. |
artikel |
69 |
Joining and package technology for 175°C Tj increasing reliability in automotive applications
|
Dietrich, Peter |
|
2014 |
54 |
9-10 |
p. 1901-1905 5 p. |
artikel |
70 |
Lifetime modeling and simulation of power modules for hybrid electrical/electrical vehicles
|
Thoben, M. |
|
2014 |
54 |
9-10 |
p. 1806-1812 7 p. |
artikel |
71 |
Local thickness and composition analysis of TEM lamellae in the FIB
|
Lang, C. |
|
2014 |
54 |
9-10 |
p. 1790-1793 4 p. |
artikel |
72 |
Low temperature FIB cross section: Application to indium micro bumps
|
Dantas de Morais, L. |
|
2014 |
54 |
9-10 |
p. 1802-1805 4 p. |
artikel |
73 |
Magnetic Field Imaging for non destructive 3D IC testing
|
Gaudestad, J. |
|
2014 |
54 |
9-10 |
p. 2093-2098 6 p. |
artikel |
74 |
Metallized polymer film capacitors ageing law based on capacitance degradation
|
Makdessi, M. |
|
2014 |
54 |
9-10 |
p. 1823-1827 5 p. |
artikel |
75 |
Microstructure of Sn–1Ag–0.5Cu solder alloy bearing Fe under salt spray test
|
Nordin, N.I.M. |
|
2014 |
54 |
9-10 |
p. 2044-2047 4 p. |
artikel |
76 |
Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130nm technology p-channel transistors
|
Rott, Gunnar Andreas |
|
2014 |
54 |
9-10 |
p. 2310-2314 5 p. |
artikel |
77 |
Monolithic integrable capacitive humidity sensing method for material characterization of dielectric thin films
|
Rückerl, A. |
|
2014 |
54 |
9-10 |
p. 1741-1744 4 p. |
artikel |
78 |
NBTI degradation in STI-based LDMOSFETs
|
He, Yandong |
|
2014 |
54 |
9-10 |
p. 1940-1943 4 p. |
artikel |
79 |
Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations
|
Tang, B.J. |
|
2014 |
54 |
9-10 |
p. 2258-2261 4 p. |
artikel |
80 |
Overload robust IGBT design for SSCB application
|
Supono, I. |
|
2014 |
54 |
9-10 |
p. 1906-1910 5 p. |
artikel |
81 |
Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits
|
Autran, J.L. |
|
2014 |
54 |
9-10 |
p. 2278-2283 6 p. |
artikel |
82 |
Pattern image enhancement by extended depth of field
|
Chef, S. |
|
2014 |
54 |
9-10 |
p. 2099-2104 6 p. |
artikel |
83 |
Performance and reliability trade-offs for high-κ RRAM
|
Raghavan, Nagarajan |
|
2014 |
54 |
9-10 |
p. 2253-2257 5 p. |
artikel |
84 |
Performance drifts of N-MOSFETs under pulsed RF life test
|
Belaïd, M.A. |
|
2014 |
54 |
9-10 |
p. 1851-1855 5 p. |
artikel |
85 |
Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes
|
Hu, J. |
|
2014 |
54 |
9-10 |
p. 2196-2199 4 p. |
artikel |
86 |
Physics-of-failure assessment methodology for power electronic systems
|
Squiller, D. |
|
2014 |
54 |
9-10 |
p. 1680-1685 6 p. |
artikel |
87 |
Power grid redundant path contribution in system on chip (SoC) robustness against electromigration
|
Ouattara, Boukary |
|
2014 |
54 |
9-10 |
p. 1702-1706 5 p. |
artikel |
88 |
Precise nanofabrication with multiple ion beams for advanced circuit edit
|
Wu, Huimeng |
|
2014 |
54 |
9-10 |
p. 1779-1784 6 p. |
artikel |
89 |
Prediction of supercapacitors floating ageing with surface electrode interface based ageing law
|
German, R. |
|
2014 |
54 |
9-10 |
p. 1813-1817 5 p. |
artikel |
90 |
Predictive evaluation of electrical characteristics of sub-22nm FinFET technologies under device geometry variations
|
Meinhardt, C. |
|
2014 |
54 |
9-10 |
p. 2319-2324 6 p. |
artikel |
91 |
Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memory
|
Raghavan, Nagarajan |
|
2014 |
54 |
9-10 |
p. 1729-1734 6 p. |
artikel |
92 |
Protective coatings of electronics under harsh thermal shock
|
Pippola, J. |
|
2014 |
54 |
9-10 |
p. 2048-2052 5 p. |
artikel |
93 |
Proton induced trapping effect on space compatible GaN HEMTs
|
Stocco, A. |
|
2014 |
54 |
9-10 |
p. 2213-2216 4 p. |
artikel |
94 |
Qualification procedure for moisture in embedded capacitors
|
Frémont, Hélène |
|
2014 |
54 |
9-10 |
p. 2013-2016 4 p. |
artikel |
95 |
Quantitative Scanning Microwave Microscopy: A calibration flow
|
Schweinböck, T. |
|
2014 |
54 |
9-10 |
p. 2070-2074 5 p. |
artikel |
96 |
Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation
|
Munteanu, D. |
|
2014 |
54 |
9-10 |
p. 2284-2288 5 p. |
artikel |
97 |
μ-Raman spectroscopy for stress analysis in high power silicon devices
|
Kociniewski, T. |
|
2014 |
54 |
9-10 |
p. 1770-1773 4 p. |
artikel |
98 |
Reliability challenges for barrier/liner system in high aspect ratio through silicon vias
|
Li, Yunlong |
|
2014 |
54 |
9-10 |
p. 1949-1952 4 p. |
artikel |
99 |
Reliability enhancement by integrated liquid cooling in power IGBT modules for hybrid and electric vehicles
|
Wang, Y. |
|
2014 |
54 |
9-10 |
p. 1911-1915 5 p. |
artikel |
100 |
Reliability of adhesive joined thinned chips on flexible substrates under humid conditions
|
Frisk, Laura |
|
2014 |
54 |
9-10 |
p. 2058-2063 6 p. |
artikel |
101 |
Reliability of Cu nanoparticle joint for high temperature power electronics
|
Ishizaki, T. |
|
2014 |
54 |
9-10 |
p. 1867-1871 5 p. |
artikel |
102 |
Reliability of ESD protection devices designed in a 3D technology
|
Courivaud, B. |
|
2014 |
54 |
9-10 |
p. 2272-2277 6 p. |
artikel |
103 |
Reliability of thick Al wire: A study of the effects of wire bonding parameters on thermal cycling degradation rate using non-destructive methods
|
Arjmand, E. |
|
2014 |
54 |
9-10 |
p. 2006-2012 7 p. |
artikel |
104 |
Reliability of Wafer Level Chip Scale Packages
|
Rongen, R. |
|
2014 |
54 |
9-10 |
p. 1988-1994 7 p. |
artikel |
105 |
Risk and reliability assessment about a manufacturing issue in a power MOSFET for automotive applications
|
Bergès, C. |
|
2014 |
54 |
9-10 |
p. 1887-1890 4 p. |
artikel |
106 |
Robust Electromigration reliability through engineering optimization
|
Ng, Wee Loon |
|
2014 |
54 |
9-10 |
p. 1666-1670 5 p. |
artikel |
107 |
Robustness Validation – A physics of failure based approach to qualification
|
Kanert, W. |
|
2014 |
54 |
9-10 |
p. 1648-1654 7 p. |
artikel |
108 |
Robust snubberless soft-switching power converter using SiC power MOSFETs and bespoke thermal design
|
Giuliani, F. |
|
2014 |
54 |
9-10 |
p. 1916-1920 5 p. |
artikel |
109 |
RTN distribution comparison for bulk, FDSOI and FinFETs devices
|
Gerrer, L. |
|
2014 |
54 |
9-10 |
p. 1749-1752 4 p. |
artikel |
110 |
Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage
|
Doering, S. |
|
2014 |
54 |
9-10 |
p. 2128-2132 5 p. |
artikel |
111 |
SEM-based nanoprobing on 32 and 28nm CMOS devices challenges for semiconductor failure analysis
|
Paul, Erik |
|
2014 |
54 |
9-10 |
p. 2115-2117 3 p. |
artikel |
112 |
Short-circuit protection for an IGBT with detecting the gate voltage and gate charge
|
Hasegawa, K. |
|
2014 |
54 |
9-10 |
p. 1897-1900 4 p. |
artikel |
113 |
Signal noise perturbation on automotive mixed-mode semiconductor device generated by graded substrate defect
|
Weber, Y. |
|
2014 |
54 |
9-10 |
p. 2064-2069 6 p. |
artikel |
114 |
Single-parameter model for the post-breakdown conduction characteristics of HoTiO x -based MIM capacitors
|
Blasco, J. |
|
2014 |
54 |
9-10 |
p. 1707-1711 5 p. |
artikel |
115 |
Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs
|
Fayyaz, A. |
|
2014 |
54 |
9-10 |
p. 2185-2190 6 p. |
artikel |
116 |
Sn whisker evaluations in 3D microbumped structures
|
Vakanas, G.P. |
|
2014 |
54 |
9-10 |
p. 1982-1987 6 p. |
artikel |
117 |
Solder void position and size effects on electro thermal behaviour of MOSFET transistors in forward bias conditions
|
Tran, S.H. |
|
2014 |
54 |
9-10 |
p. 1921-1926 6 p. |
artikel |
118 |
Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress
|
Wu, Tian-Li |
|
2014 |
54 |
9-10 |
p. 2232-2236 5 p. |
artikel |
119 |
Stress analyses of high spatial resolution on TSV and BEoL structures
|
Vogel, D. |
|
2014 |
54 |
9-10 |
p. 1963-1968 6 p. |
artikel |
120 |
Stress-induced degradation of p- and n-type organic thin-film-transistors in the ON and OFF states
|
Wrachien, N. |
|
2014 |
54 |
9-10 |
p. 1638-1642 5 p. |
artikel |
121 |
Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part II
|
Takaishi, J. |
|
2014 |
54 |
9-10 |
p. 1891-1896 6 p. |
artikel |
122 |
Study of EM void nucleation and mechanic relaxation effects
|
Marti, G. |
|
2014 |
54 |
9-10 |
p. 1692-1696 5 p. |
artikel |
123 |
Study of thermal cycling and temperature aging on PbSnAg die attach solder joints for high power modules
|
Dugal, F. |
|
2014 |
54 |
9-10 |
p. 1856-1861 6 p. |
artikel |
124 |
Study of the UBM to copper interface robustness of solder bumps in flip chip packages
|
Dreybrodt, J. |
|
2014 |
54 |
9-10 |
p. 1969-1971 3 p. |
artikel |
125 |
Temperature dependent optoelectronic properties of a non-intentionally created cleaved-coupled-cavity laser
|
Neitzert, H.C. |
|
2014 |
54 |
9-10 |
p. 2142-2146 5 p. |
artikel |
126 |
Temperature effects on the ruggedness of SiC Schottky diodes under surge current
|
León, J. |
|
2014 |
54 |
9-10 |
p. 2207-2212 6 p. |
artikel |
127 |
The degradation of multi-crystalline silicon solar cells after damp heat tests
|
Oh, Wonwook |
|
2014 |
54 |
9-10 |
p. 2176-2179 4 p. |
artikel |
128 |
The effect of gate overlap on the device degradation in IGZO thin film transistors
|
Kim, Dae Hyun |
|
2014 |
54 |
9-10 |
p. 2167-2170 4 p. |
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129 |
The effects of etching and deposition on the performance and stress evolution of open through silicon vias
|
Filipovic, Lado |
|
2014 |
54 |
9-10 |
p. 1953-1958 6 p. |
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130 |
The influence of liners with Ti, Ta or Ru finish on thin Cu films
|
Gross, David |
|
2014 |
54 |
9-10 |
p. 1877-1882 6 p. |
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131 |
Thermal and mechanical effects of voids within flip chip soldering in LED packages
|
Liu, Yang |
|
2014 |
54 |
9-10 |
p. 2028-2033 6 p. |
artikel |
132 |
Thermal-aware design and fault analysis of a DC/DC parallel resonant converter
|
De Falco, G. |
|
2014 |
54 |
9-10 |
p. 1833-1838 6 p. |
artikel |
133 |
Thermal damage in SiC Schottky diodes induced by SE heavy ions
|
Abbate, C. |
|
2014 |
54 |
9-10 |
p. 2200-2206 7 p. |
artikel |
134 |
Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage
|
De Santi, C. |
|
2014 |
54 |
9-10 |
p. 2147-2150 4 p. |
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135 |
Total ionizing dose response of fluorine implanted Silicon-On-Insulator buried oxide
|
Potter, Kenneth |
|
2014 |
54 |
9-10 |
p. 2339-2343 5 p. |
artikel |
136 |
Traps localization and analysis in GaN HEMTs
|
Chini, A. |
|
2014 |
54 |
9-10 |
p. 2222-2226 5 p. |
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137 |
Turn-off instabilities in large area IGBTs
|
Abbate, C. |
|
2014 |
54 |
9-10 |
p. 1927-1934 8 p. |
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138 |
UV LEDs reliability tests for fluoro-sensing sensor application
|
Arques-Orobon, F.J. |
|
2014 |
54 |
9-10 |
p. 2154-2158 5 p. |
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139 |
Vacuum quality evaluation for uncooled micro bolometer thermal imager sensors
|
Elßner, Michael |
|
2014 |
54 |
9-10 |
p. 1758-1763 6 p. |
artikel |
140 |
Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices
|
Raghavan, Nagarajan |
|
2014 |
54 |
9-10 |
p. 2266-2271 6 p. |
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141 |
Voltage scaling and aging effects on soft error rate in SRAM-based FPGAs
|
Kastensmidt, F.L. |
|
2014 |
54 |
9-10 |
p. 2344-2348 5 p. |
artikel |