| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Activation energy of drain-current degradation in GaN HEMTs under high-power DC stress
|
Wu, Yufei
|
|
2014
|
54 |
12 |
p. 2668-2674
7 p.
|
artikel
|
| 2 |
Aging characteristics of ZnO–V2O5-based varistors for surge protection reliability
|
Nahm, Choon-W.
|
|
2014
|
54 |
12 |
p. 2836-2842
7 p.
|
artikel
|
| 3 |
Analysis and resolution of a thermally accelerated early life failure mechanism in a 40V GaN FET
|
Gajewski, Donald A.
|
|
2014
|
54 |
12 |
p. 2675-2681
7 p.
|
artikel
|
| 4 |
An investigation into warpages, stresses and keep-out zone in 3D through-silicon-via DRAM packages
|
Tsai, M.Y.
|
|
2014
|
54 |
12 |
p. 2898-2904
7 p.
|
artikel
|
| 5 |
An investigation of the reliability of solderable ICA with low-melting-point alloy (LMPA) filler
|
Yim, Byung-Seung
|
|
2014
|
54 |
12 |
p. 2944-2950
7 p.
|
artikel
|
| 6 |
A review of HVI technology
|
Qiao, Ming
|
|
2014
|
54 |
12 |
p. 2704-2716
13 p.
|
artikel
|
| 7 |
A yield improvement technique in severe process, voltage, and temperature variations and extreme voltage scaling
|
Radfar, Mohsen
|
|
2014
|
54 |
12 |
p. 2813-2823
11 p.
|
artikel
|
| 8 |
Customized glass sealant for ceramic substrates for high temperature electronic application
|
Sharif, Ahmed
|
|
2014
|
54 |
12 |
p. 2905-2910
6 p.
|
artikel
|
| 9 |
Decrease in on-state gate current of AlGaN/GaN HEMTs by recombination-enhanced defect reaction of generated hot carriers investigated by TCAD simulation
|
Sasaki, Hajime
|
|
2014
|
54 |
12 |
p. 2662-2667
6 p.
|
artikel
|
| 10 |
Degradation transformation in spinel-type functional thick-film ceramic materials
|
Klym, H.
|
|
2014
|
54 |
12 |
p. 2843-2848
6 p.
|
artikel
|
| 11 |
Design and analysis of noise margin, write ability and read stability of organic and hybrid 6-T SRAM cell
|
Kumar, Brijesh
|
|
2014
|
54 |
12 |
p. 2801-2812
12 p.
|
artikel
|
| 12 |
Direct correlation between reliability and pH changes of phosphors for white light-emitting diodes
|
Choi, Minho
|
|
2014
|
54 |
12 |
p. 2849-2852
4 p.
|
artikel
|
| 13 |
Editorial
|
Ersland, Peter
|
|
2014
|
54 |
12 |
p. 2649-
1 p.
|
artikel
|
| 14 |
Effect of electron irradiation on morphological, compositional and electrical properties of nanocluster carbon thin films grown using room temperature based cathodic arc process for large area microelectronics
|
De, Shounak
|
|
2014
|
54 |
12 |
p. 2740-2746
7 p.
|
artikel
|
| 15 |
Effects of PCBM concentration on the electrical properties of the Au/P3HT:PCBM/n-Si (MPS) Schottky barrier diodes
|
Tüzün Özmen, Özge
|
|
2014
|
54 |
12 |
p. 2766-2774
9 p.
|
artikel
|
| 16 |
Failure analysis and improvement of 60V power UMOSFET
|
Wang, Debo
|
|
2014
|
54 |
12 |
p. 2782-2787
6 p.
|
artikel
|
| 17 |
Fatigue life evaluation of wire bonds in LED packages using numerical analysis
|
Zhang, Sung-Uk
|
|
2014
|
54 |
12 |
p. 2853-2859
7 p.
|
artikel
|
| 18 |
High-speed video analysis for kink formation in a bond wire looping
|
Han, Lei
|
|
2014
|
54 |
12 |
p. 2935-2943
9 p.
|
artikel
|
| 19 |
Impact of bias conditions on performance degradation in SiGe HBTs irradiated by 10MeV Br ion
|
Sun, Yabin
|
|
2014
|
54 |
12 |
p. 2728-2734
7 p.
|
artikel
|
| 20 |
Impact of gate metal work-function engineering for enhancement of subthreshold analog/RF performance of underlap dual material gate DG-FET
|
Kundu, Atanu
|
|
2014
|
54 |
12 |
p. 2717-2722
6 p.
|
artikel
|
| 21 |
Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation
|
Sun, H.
|
|
2014
|
54 |
12 |
p. 2650-2655
6 p.
|
artikel
|
| 22 |
Implications of thermal instability on HBT power amplifier reliability
|
Chivukula, Venkata
|
|
2014
|
54 |
12 |
p. 2688-2696
9 p.
|
artikel
|
| 23 |
Improving the power cycling performance of the emitter contact of IGBT modules: Implementation and evaluation of stitch bond layouts
|
Özkol, Emre
|
|
2014
|
54 |
12 |
p. 2796-2800
5 p.
|
artikel
|
| 24 |
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
|
Wespel, M.
|
|
2014
|
54 |
12 |
p. 2656-2661
6 p.
|
artikel
|
| 25 |
Influence of the surface roughness of the bottom electrode on the resistive-switching characteristics of Al/Al2O3/Al and Al/Al2O3/W structures fabricated on glass at 300°C
|
Molina, Joel
|
|
2014
|
54 |
12 |
p. 2747-2753
7 p.
|
artikel
|
| 26 |
Inside front cover - Editorial board
|
|
|
2014
|
54 |
12 |
p. IFC-
1 p.
|
artikel
|
| 27 |
Interval optimal design of 3-D TSV stacked chips package reliability by using the genetic algorithm method
|
Cheng, Hsin-En
|
|
2014
|
54 |
12 |
p. 2881-2897
17 p.
|
artikel
|
| 28 |
Investigation of high performance Edge Lifted Capacitors reliability for GaAs and GaN MMIC technology
|
Weng, Ming-Hung
|
|
2014
|
54 |
12 |
p. 2697-2703
7 p.
|
artikel
|
| 29 |
Junction temperature management of IGBT module in power electronic converters
|
Zhou, Luowei
|
|
2014
|
54 |
12 |
p. 2788-2795
8 p.
|
artikel
|
| 30 |
Low-cycle fatigue failure behavior and life evaluation of lead-free solder joint under high temperature
|
Zhu, Yongxin
|
|
2014
|
54 |
12 |
p. 2922-2928
7 p.
|
artikel
|
| 31 |
Low cycle fatigue performance of ball grid array structure Cu/Sn–3.0Ag–0.5Cu/Cu solder joints
|
Qin, H.B.
|
|
2014
|
54 |
12 |
p. 2911-2921
11 p.
|
artikel
|
| 32 |
Low temperature fabrication of a ZnO nanoparticle thin-film transistor suitable for flexible electronics
|
Vidor, F.F.
|
|
2014
|
54 |
12 |
p. 2760-2765
6 p.
|
artikel
|
| 33 |
Markov process based reliability model for laser diodes in space radiation environment
|
Liu, Yun
|
|
2014
|
54 |
12 |
p. 2735-2739
5 p.
|
artikel
|
| 34 |
Mechanical and electrical properties of ultra-thin chips and flexible electronics assemblies during bending
|
van den Ende, D.A.
|
|
2014
|
54 |
12 |
p. 2860-2870
11 p.
|
artikel
|
| 35 |
Mechanical and environmental durability of roll-to-roll printed silver nanoparticle film using a rapid laser annealing process for flexible electronics
|
Yang, Min
|
|
2014
|
54 |
12 |
p. 2871-2880
10 p.
|
artikel
|
| 36 |
Methodology for accurate extrapolation of InGaP/GaAs HBT safe operating area (SOA) for variations in emitter area and ballast resistor size
|
Howell, Robert S.
|
|
2014
|
54 |
12 |
p. 2682-2687
6 p.
|
artikel
|
| 37 |
Modeling and simulation of power electronic modules with microchannel coolers for thermo-mechanical performance
|
Xu, Ling
|
|
2014
|
54 |
12 |
p. 2824-2835
12 p.
|
artikel
|
| 38 |
Nanotribological properties of ALD-processed bilayer TiO2/ZnO films
|
Wang, Wun-Kai
|
|
2014
|
54 |
12 |
p. 2754-2759
6 p.
|
artikel
|
| 39 |
Predicting conducting yarn failure in woven electronic textiles
|
de Vries, Hans
|
|
2014
|
54 |
12 |
p. 2956-2960
5 p.
|
artikel
|
| 40 |
Reliability matrix solution to multiple mechanism prediction
|
Bernstein, Joseph B.
|
|
2014
|
54 |
12 |
p. 2951-2955
5 p.
|
artikel
|
| 41 |
Simulation of flicker noise in gate-all-around Silicon Nanowire MOSFETs including interface traps
|
Anandan, P.
|
|
2014
|
54 |
12 |
p. 2723-2727
5 p.
|
artikel
|
| 42 |
The roles of dendritic spacings and Ag3Sn intermetallics on hardness of the SAC307 solder alloy
|
Silva, Bismarck Luiz
|
|
2014
|
54 |
12 |
p. 2929-2934
6 p.
|
artikel
|
| 43 |
The transient analysis of latch-up in CMOS transmission gate induced by laser
|
Qiu, Weicheng
|
|
2014
|
54 |
12 |
p. 2775-2781
7 p.
|
artikel
|
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