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                             36 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A new statistical methodology predicting chip failure probability considering electromigration Sun, Ted
2013
53 12 p. 1979-1986
8 p.
artikel
2 Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC Ouennoughi, Z.
2013
53 12 p. 1841-1847
7 p.
artikel
3 Controlling of conduction mechanism and electronic parameters of silicon–metal junction by mixed Methylene Blue/2′-7′-dichlorofluorescein Soylu, M.
2013
53 12 p. 1901-1906
6 p.
artikel
4 Degradation mechanism of concentrator solar receivers without protection layer Hong, Hwen-Fen
2013
53 12 p. 1927-1932
6 p.
artikel
5 Degradation of thermal interface materials for high-temperature power electronics applications Skuriat, R.
2013
53 12 p. 1933-1942
10 p.
artikel
6 Delay fault testing using partial multiple scan chains Bareisa, Eduardas
2013
53 12 p. 2070-2077
8 p.
artikel
7 Effect of moisture condensation on long-term reliability of crystalline silicon photovoltaic modules Park, Nochang
2013
53 12 p. 1922-1926
5 p.
artikel
8 Effect of solder pads on the fatigue life of FBGA memory modules under harmonic excitation by using a global–local modeling technique Cinar, Yusuf
2013
53 12 p. 2043-2051
9 p.
artikel
9 Effects of zirconium doping on the characteristics of tin oxide thin film transistors Han, Dong-Suk
2013
53 12 p. 1875-1878
4 p.
artikel
10 Experimental investigation on the performance of CPU coolers: Effect of heat pipe inclination angle and the use of nanofluids Yousefi, T.
2013
53 12 p. 1954-1961
8 p.
artikel
11 Explanation of impact load curve in ball impact test in relation to thermal aging Daito, Tomoya
2013
53 12 p. 2005-2011
7 p.
artikel
12 High temperature physical modeling and verification of a novel 4H-SiC lateral JFET structure Zhong, Xueqian
2013
53 12 p. 1848-1856
9 p.
artikel
13 Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy Foissac, R.
2013
53 12 p. 1857-1862
6 p.
artikel
14 Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors Zhan, Runze
2013
53 12 p. 1879-1885
7 p.
artikel
15 Inside front cover - Editorial board 2013
53 12 p. IFC-
1 p.
artikel
16 Interfacial reaction and mechanical reliability of PTH solder joints with different solder/surface finish combinations Kuo, Chin-Hung
2013
53 12 p. 2012-2017
6 p.
artikel
17 Joint reliability evaluation of thermo-compression bonded FPCB/RPCB joints under high temperature storage test Yoon, Jeong-Won
2013
53 12 p. 2036-2042
7 p.
artikel
18 Large area flexible lighting foils using distributed bare LED dies on polyester substrates van den Ende, D.A.
2013
53 12 p. 1907-1915
9 p.
artikel
19 Lifetime investigation and prediction of metallized polypropylene film capacitors Li, Zhiwei
2013
53 12 p. 1962-1967
6 p.
artikel
20 Local damage free Si substrate ultra thinning for backside emission spectral analysis using OBPF for LSI failure mode detection Noae, Takuya
2013
53 12 p. 1829-1840
12 p.
artikel
21 Long term storage reliability of antifuse field programmable gate arrays Patil, Nishad
2013
53 12 p. 2052-2056
5 p.
artikel
22 [No title] Naikan, Vallayil N.A.
2013
53 12 p. 2078-
1 p.
artikel
23 [No title] Davidović, Vojkan
2013
53 12 p. 2079-
1 p.
artikel
24 On the assessment of voids in the thermal interface material on the thermal performance of a silicon chip package Ramos-Alvarado, Bladimir
2013
53 12 p. 1987-1995
9 p.
artikel
25 Optimization of flexible printed circuit board electronics in the flow environment using response surface methodology Leong, W.C.
2013
53 12 p. 1996-2004
9 p.
artikel
26 Quantum size impacts on the threshold voltage in nanocrystalline silicon thin film transistors Mao, Ling-Feng
2013
53 12 p. 1886-1890
5 p.
artikel
27 Recent advances of nanolead-free solder material for low processing temperature interconnect applications Jiang, Hongjin
2013
53 12 p. 1968-1978
11 p.
artikel
28 Reliable ultra-low-voltage low-power probabilistic-based noise-tolerant latch design Wey, I-Chyn
2013
53 12 p. 2057-2069
13 p.
artikel
29 Sidewall defects of AlGaN/GaN HEMTs evaluated by low frequency noise analysis Chiu, Hsien-Chin
2013
53 12 p. 1897-1900
4 p.
artikel
30 Study on low-Ag content Sn–Ag–Zn/Cu solder joints Luo, Tingbi
2013
53 12 p. 2018-2029
12 p.
artikel
31 Study on the shear strength degradation of ACA joints induced by different hygrothermal aging conditions Wu, Guanghua
2013
53 12 p. 2030-2035
6 p.
artikel
32 The evaluation for the chromatic characteristics of LED module under electrical and thermal coupling analysis Fu, Han Kuei
2013
53 12 p. 1916-1921
6 p.
artikel
33 Thermal and voltage instabilities of hafnium oxide films prepared by sputtering technique Wong, Hei
2013
53 12 p. 1863-1867
5 p.
artikel
34 Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing Hirano, Izumi
2013
53 12 p. 1868-1874
7 p.
artikel
35 Understanding and modeling of internal transient latch-up susceptibility in CMOS inverters due to microwave pulses Chen, Jie
2013
53 12 p. 1891-1896
6 p.
artikel
36 Void formation over limiting current density and impurity analysis of TSV fabricated by constant-current pulse-reverse modulation Lin, Nay
2013
53 12 p. 1943-1953
11 p.
artikel
                             36 gevonden resultaten
 
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