nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Acceleration of the growth of Cu3Sn voids in solder joints
|
Borgesen, Peter |
|
2012 |
52 |
6 |
p. 1121-1127 7 p. |
artikel |
2 |
Adaptive fault-tolerant DVFS with dynamic online AVF prediction
|
Firouzi, Farshad |
|
2012 |
52 |
6 |
p. 1197-1208 12 p. |
artikel |
3 |
Adhesion improvement of Cu-based substrate and epoxy molding compound interface by hierarchical structure preparation
|
Zhang, Wenjing |
|
2012 |
52 |
6 |
p. 1157-1164 8 p. |
artikel |
4 |
Analysis of reliability and optimization of ESD protection devices supported by modeling and simulation
|
Chvala, A. |
|
2012 |
52 |
6 |
p. 1031-1038 8 p. |
artikel |
5 |
A novel method to improve cell endurance window in source-side injection split gate flash memory
|
Tsair, Yong-Shiuan |
|
2012 |
52 |
6 |
p. 1055-1059 5 p. |
artikel |
6 |
A study on thermal cycling (T/C) reliability of anisotropic conductive film (ACF) flip chip assembly for thin chip-on-board (COB) packages
|
Jang, Kyung-Woon |
|
2012 |
52 |
6 |
p. 1174-1181 8 p. |
artikel |
7 |
Challenges and developments of copper wire bonding technology
|
Liu, Peisheng |
|
2012 |
52 |
6 |
p. 1092-1098 7 p. |
artikel |
8 |
Characteristics of solderable electrically conductive adhesives (ECAs) for electronic packaging
|
Yim, Byung-Seung |
|
2012 |
52 |
6 |
p. 1165-1173 9 p. |
artikel |
9 |
Characterization and reliability of nMOSFETs on flexible substrates under mechanical strain
|
Kao, Hsuan-ling |
|
2012 |
52 |
6 |
p. 999-1004 6 p. |
artikel |
10 |
Determination of contact parameters of Ni/n-GaP Schottky contacts
|
Duman, S. |
|
2012 |
52 |
6 |
p. 1005-1011 7 p. |
artikel |
11 |
Economic design of the mean prognostic distance for canary-equipped electronic systems
|
Wang, Wenbin |
|
2012 |
52 |
6 |
p. 1086-1091 6 p. |
artikel |
12 |
Effect of localised charges on nanoscale cylindrical surrounding gate MOSFET: Analog performance and linearity analysis
|
Gautam, Rajni |
|
2012 |
52 |
6 |
p. 989-994 6 p. |
artikel |
13 |
Efficient algorithms to accurately compute derating factors of digital circuits
|
Asadi, Hossein |
|
2012 |
52 |
6 |
p. 1215-1226 12 p. |
artikel |
14 |
Electrical failure analysis of peristaltic micropumps fabricated with PZT actuators
|
Chen, Bing-Liang |
|
2012 |
52 |
6 |
p. 1080-1085 6 p. |
artikel |
15 |
Experimental study of microrectangular groove structure covered with multi mesh layers on performance of flat plate heat pipe for LED lighting module
|
Hsieh, J.C. |
|
2012 |
52 |
6 |
p. 1071-1079 9 p. |
artikel |
16 |
Experiment study of dynamic looping process for thermosonic wire bonding
|
Wang, Fuliang |
|
2012 |
52 |
6 |
p. 1105-1111 7 p. |
artikel |
17 |
Fault model for on-chip communication and joint equalization and special spacing rules for on-chip bus design
|
Li, Lei |
|
2012 |
52 |
6 |
p. 1241-1246 6 p. |
artikel |
18 |
HMM–TLP correlation for system-efficient ESD design
|
Notermans, Guido |
|
2012 |
52 |
6 |
p. 1012-1019 8 p. |
artikel |
19 |
Inhomogeneous deformation and microstructure evolution of Sn–Ag-based solder interconnects during thermal cycling and shear testing
|
Chen, Hongtao |
|
2012 |
52 |
6 |
p. 1112-1120 9 p. |
artikel |
20 |
Inside front cover - Editorial board
|
|
|
2012 |
52 |
6 |
p. IFC- 1 p. |
artikel |
21 |
Investigation of intermetallic compounds (IMCs) in electrochemically stripped solder joints with SEM
|
Hurtony, Tamás |
|
2012 |
52 |
6 |
p. 1138-1142 5 p. |
artikel |
22 |
Investigation on the thermal behavior of 0.15μm gate-length In0.4Al0.6As/In0.4Ga0.6As MHEMT
|
Lin, Che-Kai |
|
2012 |
52 |
6 |
p. 969-973 5 p. |
artikel |
23 |
Low cost and highly reliable hardened latch design for nanoscale CMOS technology
|
Nan, Haiqing |
|
2012 |
52 |
6 |
p. 1209-1214 6 p. |
artikel |
24 |
Modeling of noise for p-channel DG-FinFETs
|
Pandit, Srabanti |
|
2012 |
52 |
6 |
p. 984-988 5 p. |
artikel |
25 |
Modeling of SET seasoning effects in Phase Change Memory arrays
|
Zambelli, C. |
|
2012 |
52 |
6 |
p. 1060-1064 5 p. |
artikel |
26 |
New optimized Dual-Material (DM) gate design to improve the submicron GaN-MESFETs reliability in subthreshold regime
|
Lakhdar, N. |
|
2012 |
52 |
6 |
p. 958-963 6 p. |
artikel |
27 |
Nvidia’s GPU failures: A case for prognostics and health management
|
Pecht, Michael |
|
2012 |
52 |
6 |
p. 953-957 5 p. |
artikel |
28 |
On thermo-mechanical reliability of plated-through-hole (PTH)
|
Su, Fei |
|
2012 |
52 |
6 |
p. 1189-1196 8 p. |
artikel |
29 |
Optimization modeling of the cooling stage of reflow soldering process for ball grid array package using the gray-based Taguchi method
|
Lau, Chun-Sean |
|
2012 |
52 |
6 |
p. 1143-1152 10 p. |
artikel |
30 |
Oxide and interface trap densities estimation in ultrathin W/La2O3/Si MOS capacitors
|
Mamatrishat, M. |
|
2012 |
52 |
6 |
p. 1039-1042 4 p. |
artikel |
31 |
Physical properties and electrical characteristics of H2O-based and O3-based HfO2 films deposited by ALD
|
Fan, Jibin |
|
2012 |
52 |
6 |
p. 1043-1049 7 p. |
artikel |
32 |
Radiation hardened by design techniques to reduce single event transient pulse width based on the physical mechanism
|
Chen, Jianjun |
|
2012 |
52 |
6 |
p. 1227-1232 6 p. |
artikel |
33 |
Reflow discoloration formation on pure tin (Sn) surface finish
|
Zeng, Xu |
|
2012 |
52 |
6 |
p. 1153-1156 4 p. |
artikel |
34 |
Single event upset mitigation by means of a sequential circuit state freeze
|
Smith, Farouk |
|
2012 |
52 |
6 |
p. 1233-1240 8 p. |
artikel |
35 |
Stress immunity enhancement of the SiN uniaxial strained n-channel metal–oxide–semiconductor field-effect-transistor by channel fluorine implantation
|
Chen, Yung-Yu |
|
2012 |
52 |
6 |
p. 995-998 4 p. |
artikel |
36 |
Studies on various chip-on-film (COF) packages using ultra fine pitch two-metal layer flexible printed circuits (two-metal layer FPCs)
|
Suk, Kyoung-Lim |
|
2012 |
52 |
6 |
p. 1182-1188 7 p. |
artikel |
37 |
Study of intrinsic characteristics of ESD protection diodes for high-speed I/O applications
|
Yeh, Chih-Ting |
|
2012 |
52 |
6 |
p. 1020-1030 11 p. |
artikel |
38 |
Study of the breakdown failure mechanisms for power AlGaN/GaN HEMTs implemented using a RF compatible process
|
Xie, Gang |
|
2012 |
52 |
6 |
p. 964-968 5 p. |
artikel |
39 |
Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range
|
Kumari, Vandana |
|
2012 |
52 |
6 |
p. 974-983 10 p. |
artikel |
40 |
Thermo-mechanical stress of bonded wires used in high power modules with alternating and direct current modes
|
Medjahed, Hassen |
|
2012 |
52 |
6 |
p. 1099-1104 6 p. |
artikel |
41 |
Uncertainty analysis of solder alloy material parameters estimation based on model calibration method
|
Gang, Jin Hyuk |
|
2012 |
52 |
6 |
p. 1128-1137 10 p. |
artikel |
42 |
Variability aware low leakage reliable SRAM cell design technique
|
Islam, A. |
|
2012 |
52 |
6 |
p. 1247-1252 6 p. |
artikel |
43 |
W doping effect on the dielectric properties of amorphous Ga2O3 films grown on Si substrate for low-k applications
|
Dakhel, A.A. |
|
2012 |
52 |
6 |
p. 1050-1054 5 p. |
artikel |
44 |
Yield enhancement techniques for 3-dimensional random access memories
|
Lu, Shyue-Kung |
|
2012 |
52 |
6 |
p. 1065-1070 6 p. |
artikel |