| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis and optimization of lateral thin-film Silicon-on-insulator (SOI) MOSFET transistors
|
Cortés, I.
|
|
2012
|
52 |
3 |
p. 503-508
6 p.
|
artikel
|
| 2 |
An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices
|
Trevisoli, Renan Doria
|
|
2012
|
52 |
3 |
p. 519-524
6 p.
|
artikel
|
| 3 |
Announcement and call for papers
|
|
|
2012
|
52 |
3 |
p. iii-
1 p.
|
artikel
|
| 4 |
A prognostic approach for non-punch through and field stop IGBTs
|
Patil, Nishad
|
|
2012
|
52 |
3 |
p. 482-488
7 p.
|
artikel
|
| 5 |
A review of three-dimensional viscoelastic models with an application to viscoelasticity characterization using nanoindentation
|
Chen, Dao-Long
|
|
2012
|
52 |
3 |
p. 541-558
18 p.
|
artikel
|
| 6 |
Development of reliable low temperature wafer level hermetic bonding using composite seal joint
|
Yu, Daquan
|
|
2012
|
52 |
3 |
p. 589-594
6 p.
|
artikel
|
| 7 |
Development of SnAg-based lead free solders in electronics packaging
|
Zhang, Liang
|
|
2012
|
52 |
3 |
p. 559-578
20 p.
|
artikel
|
| 8 |
Dynamic avalanche in bipolar power devices
|
Lutz, Josef
|
|
2012
|
52 |
3 |
p. 475-481
7 p.
|
artikel
|
| 9 |
Electro-thermal analysis and optimization of edge termination of power diode supported by 2D numerical modeling and simulation
|
Pribytny, P.
|
|
2012
|
52 |
3 |
p. 463-468
6 p.
|
artikel
|
| 10 |
Inside front cover - Editorial board
|
|
|
2012
|
52 |
3 |
p. IFC-
1 p.
|
artikel
|
| 11 |
Investigation of flicker noise in silicon diodes under reverse bias
|
Hájek, J.
|
|
2012
|
52 |
3 |
p. 469-474
6 p.
|
artikel
|
| 12 |
Measurement of stresses in Cu and Si around through-silicon via by synchrotron X-ray microdiffraction for 3-dimensional integrated circuits
|
Budiman, A.S.
|
|
2012
|
52 |
3 |
p. 530-533
4 p.
|
artikel
|
| 13 |
Microstructure and mechanical properties of Sn–Zn–Bi–Cr lead-free solder
|
Luo, Tingbi
|
|
2012
|
52 |
3 |
p. 585-588
4 p.
|
artikel
|
| 14 |
Modelling of current sharing in paralleled current limiting superjunction MOSFETs with common gate drives
|
Donnellan, B.T.
|
|
2012
|
52 |
3 |
p. 497-502
6 p.
|
artikel
|
| 15 |
Progress in power semiconductor devices
|
Benda, Vitezslav
|
|
2012
|
52 |
3 |
p. 461-462
2 p.
|
artikel
|
| 16 |
Quality testing methods of foil-based capacitors
|
Smulko, Janusz
|
|
2012
|
52 |
3 |
p. 603-609
7 p.
|
artikel
|
| 17 |
Sn addition on the tensile properties of high temperature Zn–4Al–3Mg solder alloys
|
Cheng, Fangjie
|
|
2012
|
52 |
3 |
p. 579-584
6 p.
|
artikel
|
| 18 |
Stability and performance analysis of a SiC-based cascode switch and an alternative solution
|
Siemieniec, Ralf
|
|
2012
|
52 |
3 |
p. 509-518
10 p.
|
artikel
|
| 19 |
Study of mechanical stress impact on the I–V characteristics of a power VDMOS device using 2D FEM simulations
|
Marcault, E.
|
|
2012
|
52 |
3 |
p. 489-496
8 p.
|
artikel
|
| 20 |
The effects of functionalized graphene nanosheets on the thermal and mechanical properties of epoxy composites for anisotropic conductive adhesives (ACAs)
|
Kim, Jiwon
|
|
2012
|
52 |
3 |
p. 595-602
8 p.
|
artikel
|
| 21 |
Thermal expansion behavior of through-silicon-via structures in three-dimensional microelectronic packaging
|
Cheng, E.J.
|
|
2012
|
52 |
3 |
p. 534-540
7 p.
|
artikel
|
| 22 |
Trades-off between lithography line edge roughness and error-correcting codes requirements for NAND Flash memories
|
Poliakov, Pavel
|
|
2012
|
52 |
3 |
p. 525-529
5 p.
|
artikel
|
Tijdschrift beschrijving