| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A methodological approach for predictive reliability: Practical case studies
|
Frémont, H.
|
|
2012
|
52 |
12 |
p. 3035-3042
8 p.
|
artikel
|
| 2 |
An automated ultrasonic inspection approach for flip chip solder joint assessment
|
Yang, Ryan S.H.
|
|
2012
|
52 |
12 |
p. 2995-3001
7 p.
|
artikel
|
| 3 |
A reliability study of adhesion mechanism between liquid crystal polymer and silicone adhesive
|
Li, Jue
|
|
2012
|
52 |
12 |
p. 2962-2969
8 p.
|
artikel
|
| 4 |
Compact modeling and simulation of Random Telegraph Noise under non-stationary conditions in the presence of random dopants
|
Wirth, G.
|
|
2012
|
52 |
12 |
p. 2955-2961
7 p.
|
artikel
|
| 5 |
Cooperative Hybrid ARQ in Solar Powered Wireless Sensor Networks
|
Jalali, Fatemeh
|
|
2012
|
52 |
12 |
p. 3043-3052
10 p.
|
artikel
|
| 6 |
Decapsulation technique using electrochemical etching for failure analysis of WLCSP n-type Si assembled module devices
|
Naoe, Takuya
|
|
2012
|
52 |
12 |
p. 3017-3021
5 p.
|
artikel
|
| 7 |
Defect detection of flip-chip solder joints using modal analysis
|
Liu, Junchao
|
|
2012
|
52 |
12 |
p. 3002-3010
9 p.
|
artikel
|
| 8 |
Development of an RF IV waveform based stress test procedure for use on GaN HFETs
|
McGenn, William
|
|
2012
|
52 |
12 |
p. 2880-2883
4 p.
|
artikel
|
| 9 |
Editorial
|
Ersland, Peter
|
|
2012
|
52 |
12 |
p. 2863-
1 p.
|
artikel
|
| 10 |
Electro- and thermo-migration induced failure mechanisms in Package on Package
|
Meinshausen, L.
|
|
2012
|
52 |
12 |
p. 2889-2906
18 p.
|
artikel
|
| 11 |
Examination of hot carrier effects of the AlGaAs/InGaAs pHEMT through device simulation
|
Steighner, Jason B.
|
|
2012
|
52 |
12 |
p. 2932-2940
9 p.
|
artikel
|
| 12 |
High-temperature fatigue life of flip chip lead-free solder joints at varying component stand-off height
|
Amalu, Emeka H.
|
|
2012
|
52 |
12 |
p. 2982-2994
13 p.
|
artikel
|
| 13 |
Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs
|
Jin, Donghyun
|
|
2012
|
52 |
12 |
p. 2875-2879
5 p.
|
artikel
|
| 14 |
Improved thermal management for GaN power electronics: Silver diamond composite packages
|
Faqir, M.
|
|
2012
|
52 |
12 |
p. 3022-3025
4 p.
|
artikel
|
| 15 |
Inside front cover - Editorial board
|
|
|
2012
|
52 |
12 |
p. IFC-
1 p.
|
artikel
|
| 16 |
Measuring seam/crack formation in interconnect metallization
|
Zampardi, Peter J.
|
|
2012
|
52 |
12 |
p. 2870-2874
5 p.
|
artikel
|
| 17 |
Modeling read SNM considering both soft oxide breakdown and negative bias temperature instability
|
Afzal, Behrouz
|
|
2012
|
52 |
12 |
p. 2948-2954
7 p.
|
artikel
|
| 18 |
Silicon nitride etch characteristics in SF6/O2 and C3F6O/O2 plasmas and evaluation of their global warming effects
|
Kim, I.J.
|
|
2012
|
52 |
12 |
p. 2970-2974
5 p.
|
artikel
|
| 19 |
Simulation model and parameter extraction of Field-Stop (FS) IGBT
|
Tang, Yong
|
|
2012
|
52 |
12 |
p. 2920-2931
12 p.
|
artikel
|
| 20 |
Stability analysis in multiwall carbon nanotube bundle interconnects
|
Haji-Nasiri, Saeed
|
|
2012
|
52 |
12 |
p. 3026-3034
9 p.
|
artikel
|
| 21 |
Structural health monitoring of solder joints in QFN package
|
Gershman, I.
|
|
2012
|
52 |
12 |
p. 3011-3016
6 p.
|
artikel
|
| 22 |
The model parameter extraction and simulation for the effects of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors
|
Zhang, Jincan
|
|
2012
|
52 |
12 |
p. 2941-2947
7 p.
|
artikel
|
| 23 |
Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs
|
Kim, Jiseok
|
|
2012
|
52 |
12 |
p. 2907-2913
7 p.
|
artikel
|
| 24 |
Trap detection in electrically stressed AlGaN/GaN HEMTs using optical pumping
|
Cheney, D.J.
|
|
2012
|
52 |
12 |
p. 2884-2888
5 p.
|
artikel
|
| 25 |
Trench DMOS interface trap characterization by three-terminal charge pumping measurement
|
Izuddin, I.
|
|
2012
|
52 |
12 |
p. 2914-2919
6 p.
|
artikel
|
| 26 |
Using a new bathtub curve to correlate quality and reliability
|
Roesch, William J.
|
|
2012
|
52 |
12 |
p. 2864-2869
6 p.
|
artikel
|
| 27 |
Via high resistance failure analysis of LSI devices induced by multiple factors related to process and design
|
Naoe, Takuya
|
|
2012
|
52 |
12 |
p. 2975-2981
7 p.
|
artikel
|
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