| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A gas micropreconcentrator for low level acetone measurements
|
Rydosz, A.
|
|
2012
|
52 |
11 |
p. 2640-2646
7 p.
|
artikel
|
| 2 |
A gold-free fully copper metalized AlGaN/GaN power HEMTs on Si substrate
|
Chiu, Hsien-Chin
|
|
2012
|
52 |
11 |
p. 2556-2560
5 p.
|
artikel
|
| 3 |
An adaptive Cu trace fatigue model based on average cross-section strain
|
Farley, D.
|
|
2012
|
52 |
11 |
p. 2763-2772
10 p.
|
artikel
|
| 4 |
An efficient adaptive software-implemented technique to detect control-flow errors in multi-core architectures
|
Maghsoudloo, Mohammad
|
|
2012
|
52 |
11 |
p. 2812-2828
17 p.
|
artikel
|
| 5 |
An infrastructure for debug using clusters of assertion-checkers
|
Neishaburi, M.H.
|
|
2012
|
52 |
11 |
p. 2781-2798
18 p.
|
artikel
|
| 6 |
A novel co-design and evaluation methodology for ESD protection in RFIC
|
Li, Li
|
|
2012
|
52 |
11 |
p. 2632-2639
8 p.
|
artikel
|
| 7 |
Benzocyclobutene polymer filling of high aspect-ratio annular trenches for fabrication of Through-Silicon-Vias (TSVs)
|
Chen, Qianwen
|
|
2012
|
52 |
11 |
p. 2670-2676
7 p.
|
artikel
|
| 8 |
Cell array reconfigurable architecture for high-efficiency AES system
|
Li, Hongge
|
|
2012
|
52 |
11 |
p. 2829-2836
8 p.
|
artikel
|
| 9 |
Circuit design and experimental test of a high power IGBT non-destructive tester
|
Ahmed, Ashraf
|
|
2012
|
52 |
11 |
p. 2609-2616
8 p.
|
artikel
|
| 10 |
Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life
|
Fonder, J.-B.
|
|
2012
|
52 |
11 |
p. 2561-2567
7 p.
|
artikel
|
| 11 |
Comparison of experimental methods for the extraction of the elastic modulus of molding compounds used in IC packaging
|
Ivankovic, Andrej
|
|
2012
|
52 |
11 |
p. 2677-2684
8 p.
|
artikel
|
| 12 |
Deep-amorphization and solid-phase epitaxial regrowth processes for hybrid orientation technologies in SOI MOSFETs with thin body
|
Ohata, A.
|
|
2012
|
52 |
11 |
p. 2602-2608
7 p.
|
artikel
|
| 13 |
Determination of the orthotropic material properties of individual layers of printed circuit boards
|
Fuchs, P.F.
|
|
2012
|
52 |
11 |
p. 2723-2730
8 p.
|
artikel
|
| 14 |
Effect of EFO parameters and superimposed ultrasound on work hardening behavior of palladium coated copper wire in thermosonic ball bonding
|
Song, W.H.
|
|
2012
|
52 |
11 |
p. 2744-2748
5 p.
|
artikel
|
| 15 |
Effects of Cu contents in flux on microstructure and joint strength of Sn–3.5Ag soldering with electroless Ni–P/Au surface finish
|
Sakurai, Hitoshi
|
|
2012
|
52 |
11 |
p. 2716-2722
7 p.
|
artikel
|
| 16 |
Effects of TSVs (through-silicon vias) on thermal performances of 3D IC integration system-in-package (SiP)
|
Lau, John H.
|
|
2012
|
52 |
11 |
p. 2660-2669
10 p.
|
artikel
|
| 17 |
Electronic properties of a dual-gated GNR-FET under uniaxial tensile strain
|
Moslemi, Mohammad Reza
|
|
2012
|
52 |
11 |
p. 2579-2584
6 p.
|
artikel
|
| 18 |
Enhanced anisotropic conductive film (ACF) void-free bonding for Chip-On-Glass (COG) packages by means of low temperature plasmas
|
Lin, Yung-Sen
|
|
2012
|
52 |
11 |
p. 2756-2762
7 p.
|
artikel
|
| 19 |
Evaluation of IGBT thermo-sensitive electrical parameters under different dissipation conditions – Comparison with infrared measurements
|
Avenas, Y.
|
|
2012
|
52 |
11 |
p. 2617-2626
10 p.
|
artikel
|
| 20 |
Finite element analysis of thermal stress for different Cu interconnects structure
|
Ying, Wang
|
|
2012
|
52 |
11 |
p. 2856-2860
5 p.
|
artikel
|
| 21 |
High thermal stability and low hysteresis dispersion AlGaN/GaN MOS-HEMTs with zirconia film design
|
Chen, Chao-Hung
|
|
2012
|
52 |
11 |
p. 2551-2555
5 p.
|
artikel
|
| 22 |
Improved performance of GeON as charge storage layer in flash memory by optimal annealing
|
Tao, Q.B.
|
|
2012
|
52 |
11 |
p. 2597-2601
5 p.
|
artikel
|
| 23 |
Improved step stress accelerated life testing method for electronic product
|
Qingchuan, He
|
|
2012
|
52 |
11 |
p. 2773-2780
8 p.
|
artikel
|
| 24 |
Inside front cover - Editorial board
|
|
|
2012
|
52 |
11 |
p. IFC-
1 p.
|
artikel
|
| 25 |
Investigation of surface pretreatments on GaAs and memory characteristics of MOS capacitors embedded with Au nano-particles
|
Chiu, Hsien-Chin
|
|
2012
|
52 |
11 |
p. 2592-2596
5 p.
|
artikel
|
| 26 |
Investigation on CDM ESD events at core circuits in a 65-nm CMOS process
|
Lin, Chun-Yu
|
|
2012
|
52 |
11 |
p. 2627-2631
5 p.
|
artikel
|
| 27 |
Microscopic scale characterization and modeling of transistor degradation under HC stress
|
Mamy Randriamihaja, Yoann
|
|
2012
|
52 |
11 |
p. 2513-2520
8 p.
|
artikel
|
| 28 |
Modeling of organic thin film field-effect transistors based on pentacene in saturation regime: Effect of light illumination
|
Mansouri, S.
|
|
2012
|
52 |
11 |
p. 2585-2591
7 p.
|
artikel
|
| 29 |
Modeling study of thermosonic flip chip bonding process
|
Wang, Fuliang
|
|
2012
|
52 |
11 |
p. 2749-2755
7 p.
|
artikel
|
| 30 |
Modeling the behavior of amorphous oxide thin film transistors before and after bias stress
|
Cerdeira, A.
|
|
2012
|
52 |
11 |
p. 2532-2536
5 p.
|
artikel
|
| 31 |
[No title]
|
Hower, Philip
|
|
2012
|
52 |
11 |
p. 2861-
1 p.
|
artikel
|
| 32 |
Novel Fe-containing Sn–1Ag–0.5Cu lead-free solder alloy with further enhanced elastic compliance and plastic energy dissipation ability for mobile products
|
Shnawah, Dhafer Abdul-Ameer
|
|
2012
|
52 |
11 |
p. 2701-2708
8 p.
|
artikel
|
| 33 |
Numerical simulations of N-type CdSe poly-TFT electrical characteristics with trap density models of Atlas/Silvaco
|
Jankovic, Nebojsa
|
|
2012
|
52 |
11 |
p. 2537-2541
5 p.
|
artikel
|
| 34 |
Optimal combination of soldering conditions of BGA for halogen-free and lead-free SMT-green processes
|
Shu, Ming-Hung
|
|
2012
|
52 |
11 |
p. 2690-2700
11 p.
|
artikel
|
| 35 |
Performance of nonvolatile memory by using band-engineered SrTiO3/HfON stack as charge-trapping layer
|
Huang, X.D.
|
|
2012
|
52 |
11 |
p. 2527-2531
5 p.
|
artikel
|
| 36 |
Prediction of damage and fatigue life of high-temperature flip chip assembly interconnections at operations
|
Amalu, Emeka H.
|
|
2012
|
52 |
11 |
p. 2731-2743
13 p.
|
artikel
|
| 37 |
Probability calculation of read failures in nano-scaled SRAM cells under process variations
|
Aghababa, Hossein
|
|
2012
|
52 |
11 |
p. 2805-2811
7 p.
|
artikel
|
| 38 |
Reliability of ICA attachment of SMDs on inkjet-printed substrates
|
Niittynen, Juha
|
|
2012
|
52 |
11 |
p. 2709-2715
7 p.
|
artikel
|
| 39 |
Reliable study of time- and frequency-domain EMI-induced noise in Wien bridge oscillator
|
Tsai, Han-Chang
|
|
2012
|
52 |
11 |
p. 2647-2654
8 p.
|
artikel
|
| 40 |
Resistive bridge defect detection enhancement under parameter variations combining Low V DD and body bias in a delay based test
|
Villacorta, Hector
|
|
2012
|
52 |
11 |
p. 2799-2804
6 p.
|
artikel
|
| 41 |
Reverse current thermal activation of AlGaN/GaN HEMTs on Si(111)
|
Fontserè, A.
|
|
2012
|
52 |
11 |
p. 2547-2550
4 p.
|
artikel
|
| 42 |
RF characteristics of proton radiated large-area SiGe HBTs at extreme temperatures
|
Qin, Guoxuan
|
|
2012
|
52 |
11 |
p. 2568-2571
4 p.
|
artikel
|
| 43 |
RF stress effects on CMOS LC-loaded VCO reliability evaluated by experiments
|
Yen, H.D.
|
|
2012
|
52 |
11 |
p. 2655-2659
5 p.
|
artikel
|
| 44 |
Structural design guideline to minimize extreme low-k delamination potential in 40nm flip-chip packages
|
Lai, Yi-Shao
|
|
2012
|
52 |
11 |
p. 2851-2855
5 p.
|
artikel
|
| 45 |
Studying the effects of intermittent faults on a microcontroller
|
Gil-Tomás, Daniel
|
|
2012
|
52 |
11 |
p. 2837-2846
10 p.
|
artikel
|
| 46 |
Subthreshold analog/RF performance of underlap DG FETs with asymmetric source/drain extensions
|
Koley, Kalyan
|
|
2012
|
52 |
11 |
p. 2572-2578
7 p.
|
artikel
|
| 47 |
Synthesis of Au–Sn alloy nanoparticles for lead-free electronics with unique combination of low and high melting temperatures
|
Tabatabaei, Salomeh
|
|
2012
|
52 |
11 |
p. 2685-2689
5 p.
|
artikel
|
| 48 |
The impact of device width on the variability of post-irradiation leakage currents in 90 and 65nm CMOS technologies
|
Rezzak, Nadia
|
|
2012
|
52 |
11 |
p. 2521-2526
6 p.
|
artikel
|
| 49 |
The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current
|
Lau, W.S.
|
|
2012
|
52 |
11 |
p. 2847-2850
4 p.
|
artikel
|
| 50 |
Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors
|
Whiting, P.G.
|
|
2012
|
52 |
11 |
p. 2542-2546
5 p.
|
artikel
|
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