| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Barrier layer thickness analysis for reliable copper plug process in CMOS technology
|
Manhas, S.K.
|
|
2011
|
51 |
8 |
p. 1365-1371
7 p.
|
article
|
| 2 |
Bias-temperature stress of Al on porous low-k dielectrics
|
He, Ming
|
|
2011
|
51 |
8 |
p. 1342-1345
4 p.
|
article
|
| 3 |
Characterization and modeling of hot carrier injection in LDMOS for L-band radar application
|
Lachéze, L.
|
|
2011
|
51 |
8 |
p. 1289-1294
6 p.
|
article
|
| 4 |
Characterization of elasto-plastic behavior of actual SAC solder joints for drop test modeling
|
Nguyen, Tung T.
|
|
2011
|
51 |
8 |
p. 1385-1392
8 p.
|
article
|
| 5 |
Design and implementation of configurable ESD protection cell for 60-GHz RF circuits in a 65-nm CMOS process
|
Lin, Chun-Yu
|
|
2011
|
51 |
8 |
p. 1315-1324
10 p.
|
article
|
| 6 |
Diagnosis of fully differential circuits based on a fault dictionary implemented in the microcontroller systems
|
Toczek, Wojciech
|
|
2011
|
51 |
8 |
p. 1413-1421
9 p.
|
article
|
| 7 |
Effect of surface roughness of silicon die and copper heat spreader on thermal performance of HFCBGA
|
Wang, Tong Hong
|
|
2011
|
51 |
8 |
p. 1372-1376
5 p.
|
article
|
| 8 |
Evaluation of gate oxide breakdown effect on cascode class E power amplifier performance
|
Kutty, Karan
|
|
2011
|
51 |
8 |
p. 1302-1308
7 p.
|
article
|
| 9 |
Fatigue life evaluation of anisotropic conductive adhesive film joints under mechanical and hygrothermal loads
|
Gao, Li-Lan
|
|
2011
|
51 |
8 |
p. 1393-1397
5 p.
|
article
|
| 10 |
Generation of reduced dynamic thermal models of electronic systems from time constant spectra of transient temperature responses
|
Janicki, Marcin
|
|
2011
|
51 |
8 |
p. 1351-1355
5 p.
|
article
|
| 11 |
High electrical performance liquid-phase HBr oxidation gate insulator of InAlAs/InGaAs metamorphic MOS-mHEMT
|
Chiu, Hsien-Chin
|
|
2011
|
51 |
8 |
p. 1337-1341
5 p.
|
article
|
| 12 |
Hot-carrier-induced time dependent dielectric breakdown in high voltage pMOSFETs
|
Alagi, F.
|
|
2011
|
51 |
8 |
p. 1283-1288
6 p.
|
article
|
| 13 |
Inside front cover - Editorial board
|
|
|
2011
|
51 |
8 |
p. IFC-
1 p.
|
article
|
| 14 |
Investigation of the reliability of 4H–SiC MOS devices for high temperature applications
|
Le-Huu, Martin
|
|
2011
|
51 |
8 |
p. 1346-1350
5 p.
|
article
|
| 15 |
Investigation on the effect of annealing process parameters on AuGeNi ohmic contact to n-GaAs using microstructural characteristics
|
Tahamtan, S.
|
|
2011
|
51 |
8 |
p. 1330-1336
7 p.
|
article
|
| 16 |
MOS power transistor model for Electromagnetic Susceptibility analysis
|
Bona, C.
|
|
2011
|
51 |
8 |
p. 1356-1364
9 p.
|
article
|
| 17 |
On-wafer measurement of the reverse-recovery time of integrated diodes by Transmission-Line-Pulsing (TLP)
|
Sauter, Martin
|
|
2011
|
51 |
8 |
p. 1309-1314
6 p.
|
article
|
| 18 |
Reliability/energy trade-off in Bluetooth error control schemes
|
Khodadoustan, Safieh
|
|
2011
|
51 |
8 |
p. 1398-1412
15 p.
|
article
|
| 19 |
SEM in situ study on high cyclic fatigue of SnPb-solder joint in the electronic packaging
|
Wang, Xi-Shu
|
|
2011
|
51 |
8 |
p. 1377-1384
8 p.
|
article
|
| 20 |
Temperature behavior and modeling of ohmic contacts to Si+ implanted n-type GaN
|
Pérez-Tomás, A.
|
|
2011
|
51 |
8 |
p. 1325-1329
5 p.
|
article
|
| 21 |
Total ionizing dose effects in elementary devices for 180-nm flash technologies
|
Hu, Zhiyuan
|
|
2011
|
51 |
8 |
p. 1295-1301
7 p.
|
article
|
Journal description