no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
A fast and efficient technique to apply Selective TMR through optimization
|
Ruano, Oscar |
|
2011 |
51 |
12 |
p. 2388-2401 14 p. |
article |
2 |
A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology
|
Chiu, Hsien-Chin |
|
2011 |
51 |
12 |
p. 2137-2142 6 p. |
article |
3 |
A 0.18μm CMOS ring VCO for clock and data recovery applications
|
Sánchez-Azqueta, C. |
|
2011 |
51 |
12 |
p. 2351-2356 6 p. |
article |
4 |
A model for length of saturation velocity region in double-gate Graphene nanoribbon transistors
|
Ghadiry, M.H. |
|
2011 |
51 |
12 |
p. 2143-2146 4 p. |
article |
5 |
Analytical threshold voltage model for cylindrical surrounding-gate MOSFET with electrically induced source/drain extensions
|
Li, Cong |
|
2011 |
51 |
12 |
p. 2053-2058 6 p. |
article |
6 |
An explicit multi-exponential model for semiconductor junctions with series and shunt resistances
|
Lugo-Muñoz, Denise |
|
2011 |
51 |
12 |
p. 2044-2048 5 p. |
article |
7 |
A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement
|
Saremi, Mehdi |
|
2011 |
51 |
12 |
p. 2069-2076 8 p. |
article |
8 |
A self-consistent extraction procedure for source/drain resistance in MOSFETs
|
Chang, Yang-Hua |
|
2011 |
51 |
12 |
p. 2049-2052 4 p. |
article |
9 |
Controlling of electrical and interface state density properties of ZnO:Co/p-silicon diode structures by compositional fraction of cobalt dopant
|
Yakuphanoglu, F. |
|
2011 |
51 |
12 |
p. 2195-2199 5 p. |
article |
10 |
Corrosion behavior, whisker growth, and electrochemical migration of Sn–3.0Ag–0.5Cu solder doping with In and Zn in NaCl solution
|
Hua, L. |
|
2011 |
51 |
12 |
p. 2274-2283 10 p. |
article |
11 |
Crack propagation in multilayer thin-film structures of electronic packages using the peridynamic theory
|
Agwai, A. |
|
2011 |
51 |
12 |
p. 2298-2305 8 p. |
article |
12 |
DSP based overcurrent relay using fuzzy bang–bang controller
|
Goh, Yin Lee |
|
2011 |
51 |
12 |
p. 2366-2373 8 p. |
article |
13 |
Editorial board
|
|
|
2011 |
51 |
12 |
p. IFC- 1 p. |
article |
14 |
Effect of additions of ZrO2 nano-particles on the microstructure and shear strength of Sn–Ag–Cu solder on Au/Ni metallized Cu pads
|
Gain, Asit Kumar |
|
2011 |
51 |
12 |
p. 2306-2313 8 p. |
article |
15 |
Effects of alloying elements on microstructure and thermal aging properties of Au bonding wire
|
Kim, Hyung-Giun |
|
2011 |
51 |
12 |
p. 2250-2256 7 p. |
article |
16 |
Effects of Bi segregation on the tensile properties of Cu/Cu3Sn(100) interface
|
Pang, X.Y. |
|
2011 |
51 |
12 |
p. 2330-2335 6 p. |
article |
17 |
Erratum to “On the reliability of electrostatic NEMS/MEMS devices: Review of present knowledge on the dielectric charging and stiction failure mechanisms and novel characterization methodologies” [MR 51/9–11 (2011) 1810–1818]
|
Zaghloul, Usama |
|
2011 |
51 |
12 |
p. 2416- 1 p. |
article |
18 |
Evaluating nanotribological behavior of annealing Si0.8Ge0.2/Si films
|
Wu, Ming-Jhang |
|
2011 |
51 |
12 |
p. 2223-2227 5 p. |
article |
19 |
Fast and accurate statistical characterization of standard cell libraries
|
Brusamarello, Lucas |
|
2011 |
51 |
12 |
p. 2341-2350 10 p. |
article |
20 |
Finite element based fatigue life estimation of the solder joints with effect of intermetallic compound growth
|
Chiou, Yung-Chuan |
|
2011 |
51 |
12 |
p. 2319-2329 11 p. |
article |
21 |
Functional fault models for non-scan sequential circuits
|
Bareisa, Eduardas |
|
2011 |
51 |
12 |
p. 2402-2411 10 p. |
article |
22 |
High fluence 1.8MeV proton irradiation effects on n-type MOS capacitors
|
Arinero, R. |
|
2011 |
51 |
12 |
p. 2093-2096 4 p. |
article |
23 |
Hole tunneling from valence band and hot-carrier induced hysteresis effect in 0.13μm partially depleted silicon-on-insulator n-MOSFETs
|
Zhou, Jianhua |
|
2011 |
51 |
12 |
p. 2077-2080 4 p. |
article |
24 |
Improving an LDMOST by variation of lateral doping on epitaxial-layer drift region
|
Chang, Yang-Hua |
|
2011 |
51 |
12 |
p. 2059-2063 5 p. |
article |
25 |
Influence of crystallographic orientation of Sn–Ag–Cu on electromigration in flip-chip joint
|
Lee, Kiju |
|
2011 |
51 |
12 |
p. 2290-2297 8 p. |
article |
26 |
Influence of the surrounding ambient on the reliability of the electrical characterization of thin oxide layers using an atomic force microscope
|
Hourani, W. |
|
2011 |
51 |
12 |
p. 2097-2101 5 p. |
article |
27 |
Investigation of the characteristics of overhang bonding for 3-D stacked dies in microelectronics packaging
|
Li, Junhui |
|
2011 |
51 |
12 |
p. 2236-2242 7 p. |
article |
28 |
Investigation of the electrical transport mechanism in VO x thin films
|
Axelevitch, A. |
|
2011 |
51 |
12 |
p. 2119-2123 5 p. |
article |
29 |
Laterally inhomogeneous barrier analysis of identically prepared Cd/CdS/n-Si/Au–Sb structures by SILAR method
|
Güzeldir, B. |
|
2011 |
51 |
12 |
p. 2179-2184 6 p. |
article |
30 |
Leakage current and defect characterization of p+n-source/drain diodes
|
Roll, Guntrade |
|
2011 |
51 |
12 |
p. 2081-2085 5 p. |
article |
31 |
Lightly Al-doped Ta2O5: Electrical properties and mechanisms of conductivity
|
Spassov, D. |
|
2011 |
51 |
12 |
p. 2102-2109 8 p. |
article |
32 |
Microstructure, electric flame-off characteristics and tensile properties of silver bonding wires
|
Hsueh, Hao-Wen |
|
2011 |
51 |
12 |
p. 2243-2249 7 p. |
article |
33 |
Novel radiation hardened latch design considering process, voltage and temperature variations for nanoscale CMOS technology
|
Nan, Haiqing |
|
2011 |
51 |
12 |
p. 2086-2092 7 p. |
article |
34 |
Off-state drain breakdown mechanisms of VDMOS with anti-JFET implantation
|
Tam, Wing-Shan |
|
2011 |
51 |
12 |
p. 2064-2068 5 p. |
article |
35 |
On-chip system level protection of FM antenna pin with improved linearity
|
Notermans, Guido |
|
2011 |
51 |
12 |
p. 2129-2136 8 p. |
article |
36 |
On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current–voltage (I–V) and admittance spectroscopy methods
|
Demirezen, S. |
|
2011 |
51 |
12 |
p. 2153-2162 10 p. |
article |
37 |
Operand Width Aware Hardware Reuse: A low cost fault-tolerant approach to ALU design in embedded processors
|
Fazeli, Mahdi |
|
2011 |
51 |
12 |
p. 2374-2387 14 p. |
article |
38 |
Organic inverter: Theoretical analysis using load matching technique
|
Omar, S. |
|
2011 |
51 |
12 |
p. 2173-2178 6 p. |
article |
39 |
Photosensitivity n-channel ZnO phototransistor for optoelectronic applications: Modeling of ZnO TFT
|
Yakuphanoglu, F. |
|
2011 |
51 |
12 |
p. 2200-2204 5 p. |
article |
40 |
Poisson shock models leading to new classes of non-monotonic aging life distributions
|
Pandey, Aniruddha |
|
2011 |
51 |
12 |
p. 2412-2415 4 p. |
article |
41 |
Process variation aware dual-Vth assignment technique for low power nanoscale CMOS design
|
Mande, Sudhakar S. |
|
2011 |
51 |
12 |
p. 2357-2365 9 p. |
article |
42 |
Quantitative reliability analysis of flip–chip packages under thermal–cyclic loading and in consideration of parameter uncertainties
|
Hsu, Yao |
|
2011 |
51 |
12 |
p. 2284-2289 6 p. |
article |
43 |
Reduction of defects in TSV filled with Cu by high-speed 3-step PPR for 3D Si chip stacking
|
Hong, Sung Chul |
|
2011 |
51 |
12 |
p. 2228-2235 8 p. |
article |
44 |
Self-protection capability of integrated NLDMOS power arrays in ESD pulse regimes
|
Aliaj, Blerina |
|
2011 |
51 |
12 |
p. 2015-2030 16 p. |
article |
45 |
Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors
|
Lv, Ling |
|
2011 |
51 |
12 |
p. 2168-2172 5 p. |
article |
46 |
Study on a cooling system based on thermoelectric cooler for thermal management of high-power LEDs
|
Li, Junhui |
|
2011 |
51 |
12 |
p. 2210-2215 6 p. |
article |
47 |
Substrate-engineered GGNMOS for low trigger voltage ESD in 65nm CMOS process
|
Ma, Fei |
|
2011 |
51 |
12 |
p. 2124-2128 5 p. |
article |
48 |
Synthesis creep behavior of Sn63Pb37 under the applied stress and electric current
|
Xuan, Fu-Zhen |
|
2011 |
51 |
12 |
p. 2336-2340 5 p. |
article |
49 |
Temperature dependent electrical and dielectric properties of Sn/p-Si metal–semiconductor (MS) structures
|
Karataş, Şükrü |
|
2011 |
51 |
12 |
p. 2205-2209 5 p. |
article |
50 |
The effect of surface modification and catalytic metal contact on methane sensing performance of nano-ZnO–Si heterojunction sensor
|
Bhattacharyya, P. |
|
2011 |
51 |
12 |
p. 2185-2194 10 p. |
article |
51 |
The effects of 12MeV electron irradiation on the electrical characteristics of the Au/Aniline blue/p-Si/Al device
|
Aydoğan, Şakir |
|
2011 |
51 |
12 |
p. 2216-2222 7 p. |
article |
52 |
The influence of assisted ion beam bombardment on structure and electrical characteristics of HfSiO dielectric synthesized by DIBSD
|
Yang, X.M. |
|
2011 |
51 |
12 |
p. 2115-2118 4 p. |
article |
53 |
Thermal interface materials for automotive electronic control unit: Trends, technology and R&D challenges
|
Otiaba, K.C. |
|
2011 |
51 |
12 |
p. 2031-2043 13 p. |
article |
54 |
Thermal reliability of VCO using InGaP/GaAs HBTs
|
Liu, Xiang |
|
2011 |
51 |
12 |
p. 2147-2152 6 p. |
article |
55 |
Thermal stability investigations of AlGaN/GaN HEMTs with various high work function gate metal designs
|
Chiu, Hsien-Chin |
|
2011 |
51 |
12 |
p. 2163-2167 5 p. |
article |
56 |
Tunneling component suppression in charge pumping measurement and reliability study for high-k gated MOSFETs
|
Lu, Chun-Chang |
|
2011 |
51 |
12 |
p. 2110-2114 5 p. |
article |
57 |
Void formation at the interface in Sn/Cu solder joints
|
Yang, Yang |
|
2011 |
51 |
12 |
p. 2314-2318 5 p. |
article |
58 |
Wafer-level packaging of silicon to glass with a BCB intermediate layer using localised laser heating
|
Lorenz, N. |
|
2011 |
51 |
12 |
p. 2257-2262 6 p. |
article |
59 |
Warpage evolution of overmolded ball grid array package during post-mold curing thermal process
|
Chiu, Tz-Cheng |
|
2011 |
51 |
12 |
p. 2263-2273 11 p. |
article |