no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode
|
Xu, J.P. |
|
2010 |
50 |
8 |
p. 1081-1086 6 p. |
article |
2 |
A novel impact test system for more efficient reliability testing
|
Hokka, Jussi |
|
2010 |
50 |
8 |
p. 1125-1133 9 p. |
article |
3 |
A proposed DG-FinFET based SRAM cell design with RadHard capabilities
|
Rathod, S.S. |
|
2010 |
50 |
8 |
p. 1181-1188 8 p. |
article |
4 |
Characteristics analysis and optimization design of a new ESD power clamp circuit
|
Liu, Hongxia |
|
2010 |
50 |
8 |
p. 1087-1093 7 p. |
article |
5 |
Charge-based model for symmetric double-gate MOSFETs with inclusion of channel doping effect
|
Zhang, Lining |
|
2010 |
50 |
8 |
p. 1062-1070 9 p. |
article |
6 |
Corrosion protection of anisotropically conductive adhesive joined flip chips
|
Kokko, Kati |
|
2010 |
50 |
8 |
p. 1152-1158 7 p. |
article |
7 |
Deteriorated radiation effects impact on the characteristics of MOS transistors with multi-finger configuration
|
Wang, Jian |
|
2010 |
50 |
8 |
p. 1094-1097 4 p. |
article |
8 |
Development of a novel stack package to fabricate high density memory modules for high-end application
|
Kuo, Chinguo |
|
2010 |
50 |
8 |
p. 1116-1120 5 p. |
article |
9 |
Devices’ optimization against hot-carrier degradation in high voltage pLEDMOS transistor
|
Wu, Hong |
|
2010 |
50 |
8 |
p. 1071-1076 6 p. |
article |
10 |
Effects of Al on the failure mechanism of the Sn–Ag–Zn eutectic solder
|
Wei, C. |
|
2010 |
50 |
8 |
p. 1142-1145 4 p. |
article |
11 |
Electromigration-induced failures at Cu/Sn/Cu flip-chip joint interfaces
|
Tseng, H.W. |
|
2010 |
50 |
8 |
p. 1159-1162 4 p. |
article |
12 |
Evaluating the abrasive wear of Zn1− x Mn x O heteroepitaxial layers using a nanoscratch technique
|
Chang, Yu-Ming |
|
2010 |
50 |
8 |
p. 1111-1115 5 p. |
article |
13 |
Exciton wavefunction coupled surface plasmon resonance for In-rich InGaN film with perforated aluminum cylindrical micropillar arrays
|
Hu, Yeu-Jent |
|
2010 |
50 |
8 |
p. 1107-1110 4 p. |
article |
14 |
Failure investigation on copper-plated blind vias in PCB
|
Ji, Li-Na |
|
2010 |
50 |
8 |
p. 1163-1170 8 p. |
article |
15 |
Generating sub-1V reference voltages from a resistorless CMOS bandgap reference circuit by using a piecewise curvature temperature compensation technique
|
Tam, Wing-Shan |
|
2010 |
50 |
8 |
p. 1054-1061 8 p. |
article |
16 |
Influence of Ag micro-particle additions on the microstructure, hardness and tensile properties of Sn–9Zn binary eutectic solder alloy
|
Ahmed, Mansur |
|
2010 |
50 |
8 |
p. 1134-1141 8 p. |
article |
17 |
Inside front cover - Editorial board
|
|
|
2010 |
50 |
8 |
p. IFC- 1 p. |
article |
18 |
[No title]
|
Jankovic, Nebojsa |
|
2010 |
50 |
8 |
p. 1189- 1 p. |
article |
19 |
On-chip reliability monitors for measuring circuit degradation
|
Keane, John |
|
2010 |
50 |
8 |
p. 1039-1053 15 p. |
article |
20 |
Optimization of SiN X :H films deposited by PECVD for reliability of electronic, microsystems and optical applications
|
Herth, E. |
|
2010 |
50 |
8 |
p. 1103-1106 4 p. |
article |
21 |
Plasma-enhanced flexible metal–insulator–metal capacitor using high-k ZrO2 film as gate dielectric with improved reliability
|
Chu, Min-Ching |
|
2010 |
50 |
8 |
p. 1098-1102 5 p. |
article |
22 |
Temperature dependence of the interface state distribution due to hot carrier effect in FinFET device
|
Ma, Chenyue |
|
2010 |
50 |
8 |
p. 1077-1080 4 p. |
article |
23 |
Testing the effects of temperature cycling on tantalum capacitors
|
Virkki, J. |
|
2010 |
50 |
8 |
p. 1121-1124 4 p. |
article |
24 |
The effect of tin grain structure on whisker growth
|
Yu, Cheng-Fu |
|
2010 |
50 |
8 |
p. 1146-1151 6 p. |
article |
25 |
Two effective methods to mitigate soft error effects in SRAM-based FPGAs
|
Rohani, Alireza |
|
2010 |
50 |
8 |
p. 1171-1180 10 p. |
article |