| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advantage of further scaling in gate dielectrics below 0.5nm of equivalent oxide thickness with La2O3 gate dielectrics
|
Kakushima, K.
|
|
2010
|
50 |
6 |
p. 790-793
4 p.
|
artikel
|
| 2 |
A model for the critical voltage for electrical degradation of GaN high electron mobility transistors
|
Joh, Jungwoo
|
|
2010
|
50 |
6 |
p. 767-773
7 p.
|
artikel
|
| 3 |
Calendar
|
|
|
2010
|
50 |
6 |
p. I-III
nvt p.
|
artikel
|
| 4 |
Constant current stress-induced leakage current in mixed HfO2–Ta2O5 stacks
|
Atanassova, E.
|
|
2010
|
50 |
6 |
p. 794-800
7 p.
|
artikel
|
| 5 |
Design of differential low-noise amplifier with cross-coupled-SCR ESD protection scheme
|
Lin, Chun-Yu
|
|
2010
|
50 |
6 |
p. 831-838
8 p.
|
artikel
|
| 6 |
Determination of GaN HEMT reliability by monitoring I DSS
|
Pazirandeh, R.
|
|
2010
|
50 |
6 |
p. 763-766
4 p.
|
artikel
|
| 7 |
Development of embedded piezoelectric acoustic sensor array architecture
|
Ghoshal, Anindya
|
|
2010
|
50 |
6 |
p. 857-863
7 p.
|
artikel
|
| 8 |
Editorial
|
Ersland, Peter
|
|
2010
|
50 |
6 |
p. 757-
1 p.
|
artikel
|
| 9 |
Effect of annealing treatment and nanomechanical properties for multilayer Si0.8Ge0.2–Si films
|
He, Bo-Ching
|
|
2010
|
50 |
6 |
p. 851-856
6 p.
|
artikel
|
| 10 |
Functional fluid jetting performance optimization
|
Pekkanen, Ville
|
|
2010
|
50 |
6 |
p. 864-871
8 p.
|
artikel
|
| 11 |
High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT using palladium-gate technology
|
Chiu, Hsien-Chin
|
|
2010
|
50 |
6 |
p. 847-850
4 p.
|
artikel
|
| 12 |
High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate
|
Demirtas, Sefa
|
|
2010
|
50 |
6 |
p. 758-762
5 p.
|
artikel
|
| 13 |
Impact of strain on hot electron reliability of dual-band power amplifier and integrated LNA-mixer RF performances
|
Yuan, J.S.
|
|
2010
|
50 |
6 |
p. 807-812
6 p.
|
artikel
|
| 14 |
Impedance and barrier capacitance of silicon diodes implanted with high-energy Xe ions
|
Poklonski, N.A.
|
|
2010
|
50 |
6 |
p. 813-820
8 p.
|
artikel
|
| 15 |
Inside front cover - Editorial board
|
|
|
2010
|
50 |
6 |
p. IFC-
1 p.
|
artikel
|
| 16 |
Intrinsic and extrinsic reliability of a serial connection of capacitors
|
Allers, K.-H.
|
|
2010
|
50 |
6 |
p. 881-886
6 p.
|
artikel
|
| 17 |
Investigation on NMOS-based power-rail ESD clamp circuits with gate-driven mechanism in a 0.13-μm CMOS technology
|
Chen, Shih-Hung
|
|
2010
|
50 |
6 |
p. 821-830
10 p.
|
artikel
|
| 18 |
Moisture effect on the dielectric and structure of BaTiO3-based devices
|
Wang, H.Y.
|
|
2010
|
50 |
6 |
p. 887-890
4 p.
|
artikel
|
| 19 |
Novel analysis model for investigation of contact force and scrub length for design of probe card
|
Liu, De-Shin
|
|
2010
|
50 |
6 |
p. 872-880
9 p.
|
artikel
|
| 20 |
Physically based models of electromigration: From Black’s equation to modern TCAD models
|
de Orio, R.L.
|
|
2010
|
50 |
6 |
p. 775-789
15 p.
|
artikel
|
| 21 |
Promoting of charged-device model/electrostatic discharge immunity in the dicing saw process
|
Wang, Mu-Chun
|
|
2010
|
50 |
6 |
p. 839-846
8 p.
|
artikel
|
| 22 |
Voltage stress effect on class AB power amplifier and mixed-signal sample-hold circuit
|
Yuan, J.S.
|
|
2010
|
50 |
6 |
p. 801-806
6 p.
|
artikel
|
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