| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT)
|
Tsai, Tsung-Han
|
|
2010
|
50 |
5 |
p. 734-737
4 p.
|
artikel
|
| 2 |
A 0.35μm CMOS divide-by-2 quadrature injection-locked frequency divider based on voltage–current feedback topology
|
Jang, Sheng-Lyang
|
|
2010
|
50 |
5 |
p. 594-598
5 p.
|
artikel
|
| 3 |
Analysis of ESD discharge current distribution and area optimization of VDMOS gate protection structure
|
Tam, Wing-Shan
|
|
2010
|
50 |
5 |
p. 622-626
5 p.
|
artikel
|
| 4 |
Analysis of optical properties of fundamental-mode in waveguide tapered fibers
|
Lee, Cheng-Ling
|
|
2010
|
50 |
5 |
p. 726-729
4 p.
|
artikel
|
| 5 |
An investigation of drain pulse induced hot carrier degradation in n-type low temperature polycrystalline silicon thin film transistors
|
Zhang, Meng
|
|
2010
|
50 |
5 |
p. 713-716
4 p.
|
artikel
|
| 6 |
A process for high yield and high performance carbon nanotube field effect transistors
|
Lee, Tseng-Chin
|
|
2010
|
50 |
5 |
p. 666-669
4 p.
|
artikel
|
| 7 |
A simple method for sub-100nm pattern generation with I-line double-patterning technique
|
Tsai, Tzu-I
|
|
2010
|
50 |
5 |
p. 584-588
5 p.
|
artikel
|
| 8 |
Calendar
|
|
|
2010
|
50 |
5 |
p. I-III
nvt p.
|
artikel
|
| 9 |
Characteristics of pH sensors fabricated by using protein-mediated CdSe/ZnS quantum dots
|
Maikap, S.
|
|
2010
|
50 |
5 |
p. 747-752
6 p.
|
artikel
|
| 10 |
Characteristics optimization of N2O annealing on tungsten nanocrystal with W/Si dual-sputtered method for nonvolatile memory application
|
Wang, Jer-Chyi
|
|
2010
|
50 |
5 |
p. 639-642
4 p.
|
artikel
|
| 11 |
Device and circuit level suppression techniques for random-dopant-induced static noise margin fluctuation in 16-nm-gate SRAM cell
|
Lee, Kuo-Fu
|
|
2010
|
50 |
5 |
p. 647-651
5 p.
|
artikel
|
| 12 |
Effects of RF power on the structural, optical and electrical properties of Al-doped zinc oxide films
|
Kuo, Shou-Yi
|
|
2010
|
50 |
5 |
p. 730-733
4 p.
|
artikel
|
| 13 |
Electrical and reliability characteristics of GaAs MOSHEMTs utilizing high-k IIIB and IVB oxide layers
|
Chiu, Hsien-Chin
|
|
2010
|
50 |
5 |
p. 631-634
4 p.
|
artikel
|
| 14 |
Electrical characteristics and reliability properties of metal–oxide–semiconductor capacitors with HfZrLaO gate dielectrics
|
Liu, C.H.
|
|
2010
|
50 |
5 |
p. 599-602
4 p.
|
artikel
|
| 15 |
Electrical characteristics of nMOSFETs fabricated on hybrid orientation substrate with amorphization/templated recrystallization method
|
Huang, Po Chin
|
|
2010
|
50 |
5 |
p. 662-665
4 p.
|
artikel
|
| 16 |
Fabrication and thermal analysis of flip-chip light-emitting diodes with different numbers of Au stub bumps
|
Lin, Cheng-Chen
|
|
2010
|
50 |
5 |
p. 683-687
5 p.
|
artikel
|
| 17 |
Fabrication of Au/PEDOT stacked electrodes for organic thin film transistors by imprinting technology
|
Chen, Henry J.H.
|
|
2010
|
50 |
5 |
p. 717-721
5 p.
|
artikel
|
| 18 |
Field enhancement of omega-shaped-gated poly-Si TFT SONOS memory fabricated by a simple sidewall spacer formation
|
Wu, Chun-Yu
|
|
2010
|
50 |
5 |
p. 704-708
5 p.
|
artikel
|
| 19 |
Flexible metal–insulator–metal capacitor using plasma enhanced binary hafnium–zirconium–oxide as gate dielectric layer
|
Meena, Jagan Singh
|
|
2010
|
50 |
5 |
p. 652-656
5 p.
|
artikel
|
| 20 |
Gate tunneling leakage current behavior of 40nm PD SOI NMOS device considering the floating body effect
|
Hung, H.J.
|
|
2010
|
50 |
5 |
p. 607-609
3 p.
|
artikel
|
| 21 |
Ge based nanostructures for electronic and photonic devices
|
Ray, S.K.
|
|
2010
|
50 |
5 |
p. 674-678
5 p.
|
artikel
|
| 22 |
Glucose biosensor of ruthenium-doped TiO2 sensing electrode by co-sputtering system
|
Chou, Jung-Chuan
|
|
2010
|
50 |
5 |
p. 753-756
4 p.
|
artikel
|
| 23 |
High efficiency p–i–n organic light-emitting diodes with a novel n-doping layer
|
Chen, Peng Yu
|
|
2010
|
50 |
5 |
p. 696-698
3 p.
|
artikel
|
| 24 |
High-power broad-area InGaNAs/GaAs quantum-well lasers in the 1200nm range
|
Yang, Hung-Pin D.
|
|
2010
|
50 |
5 |
p. 722-725
4 p.
|
artikel
|
| 25 |
Hysteresis effect on traps of Si3N4 sensing membranes for pH difference sensitivity
|
Lue, Cheng-En
|
|
2010
|
50 |
5 |
p. 738-741
4 p.
|
artikel
|
| 26 |
Impact of Hf content on positive bias temperature instability reliability of HfSiON gate dielectrics
|
Chen, H.W.
|
|
2010
|
50 |
5 |
p. 614-617
4 p.
|
artikel
|
| 27 |
Improvement of TDDB reliability, characteristics of HfO2 high-k/metal gate MOSFET device with oxygen post deposition annealing
|
Hsu, Chia-Wei
|
|
2010
|
50 |
5 |
p. 618-621
4 p.
|
artikel
|
| 28 |
InGaAs submonolayer quantum-dot photonic-crystal LEDs for fiber-optic communications
|
Yang, Hung-Pin D.
|
|
2010
|
50 |
5 |
p. 688-691
4 p.
|
artikel
|
| 29 |
Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs
|
Lin, Ray-Ming
|
|
2010
|
50 |
5 |
p. 679-682
4 p.
|
artikel
|
| 30 |
Inside front cover - Editorial board
|
|
|
2010
|
50 |
5 |
p. IFC-
1 p.
|
artikel
|
| 31 |
Low power resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte
|
Rahaman, S.Z.
|
|
2010
|
50 |
5 |
p. 643-646
4 p.
|
artikel
|
| 32 |
Modeling of high-frequency characteristics for epoxy-sealed micro vacuum capacitors
|
Wong, Oi Ying
|
|
2010
|
50 |
5 |
p. 627-630
4 p.
|
artikel
|
| 33 |
Multi-gate non-volatile memories with nanowires as charge storage material
|
Tsui, Bing-Yue
|
|
2010
|
50 |
5 |
p. 603-606
4 p.
|
artikel
|
| 34 |
Non-ideal effects improvement of SF6 plasma treated hafnium oxide film based on electrolyte–insulator–semiconductor structure for pH-sensor application
|
Lu, Tseng-Fu
|
|
2010
|
50 |
5 |
p. 742-746
5 p.
|
artikel
|
| 35 |
[No title]
|
Liou, Juin J.
|
|
2010
|
50 |
5 |
p. 583-
1 p.
|
artikel
|
| 36 |
On the injection methods in a top-series-injection-locked frequency divider
|
Jang, Sheng-Lyang
|
|
2010
|
50 |
5 |
p. 589-593
5 p.
|
artikel
|
| 37 |
Optimization on configuration of surface conduction electron-emitters
|
Cheng, Hui-Wen
|
|
2010
|
50 |
5 |
p. 699-703
5 p.
|
artikel
|
| 38 |
Physical and electrical characteristics of the high-k Nd2O3 polyoxide deposited on polycrystalline silicon
|
Kao, Chyuan-Haur
|
|
2010
|
50 |
5 |
p. 709-712
4 p.
|
artikel
|
| 39 |
Red polymer light-emitting devices based on dye-dispersed poly (9,9-dioctylfluorene-alt-benzothiadiazole)
|
Chiu, Pin-Hsiang
|
|
2010
|
50 |
5 |
p. 692-695
4 p.
|
artikel
|
| 40 |
Statistical variability in FinFET devices with intrinsic parameter fluctuations
|
Hwang, Chih-Hong
|
|
2010
|
50 |
5 |
p. 635-638
4 p.
|
artikel
|
| 41 |
Tensile CESL-induced strain dependence on impact ionization efficiency in nMOSFETs
|
Wang, Bo-Chin
|
|
2010
|
50 |
5 |
p. 610-613
4 p.
|
artikel
|
| 42 |
The impact of high-frequency characteristics induced by intrinsic parameter fluctuations in nano-MOSFET device and circuit
|
Han, Ming-Hung
|
|
2010
|
50 |
5 |
p. 657-661
5 p.
|
artikel
|
| 43 |
The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device
|
Liu, Kou-Chen
|
|
2010
|
50 |
5 |
p. 670-673
4 p.
|
artikel
|
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