| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A high level synthesis design flow with a novel approach for efficient design space exploration in case of multi-parametric optimization objective
|
Sengupta, Anirban
|
|
2010
|
50 |
3 |
p. 424-437
14 p.
|
article
|
| 2 |
Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness
|
Kobayashi, Yusuke
|
|
2010
|
50 |
3 |
p. 332-337
6 p.
|
article
|
| 3 |
A prognostics and health management roadmap for information and electronics-rich systems
|
Pecht, Michael
|
|
2010
|
50 |
3 |
p. 317-323
7 p.
|
article
|
| 4 |
Calendar
|
|
|
2010
|
50 |
3 |
p. I-III
nvt p.
|
article
|
| 5 |
Circuit level interconnect reliability study using 3D circuit model
|
He, Feifei
|
|
2010
|
50 |
3 |
p. 376-390
15 p.
|
article
|
| 6 |
Electromigration-induced stress in a confined bamboo interconnect with randomly distributed grain sizes
|
Dong, X.
|
|
2010
|
50 |
3 |
p. 391-397
7 p.
|
article
|
| 7 |
Electro-thermal stress effect on InGaP/GaAs heterojunction bipolar low-noise amplifier performance
|
Liu, Xiang
|
|
2010
|
50 |
3 |
p. 365-369
5 p.
|
article
|
| 8 |
Extraction of VBIC model parameters for InGaAsSb DHBTs
|
Chang, Yang-Hua
|
|
2010
|
50 |
3 |
p. 370-375
6 p.
|
article
|
| 9 |
Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures
|
Benbakhti, B.
|
|
2010
|
50 |
3 |
p. 360-364
5 p.
|
article
|
| 10 |
Improved resolution method to study at 3D the conduction phenomena inside GaAs PIN photodiode
|
Bouabdallah, B.
|
|
2010
|
50 |
3 |
p. 447-453
7 p.
|
article
|
| 11 |
Inside front cover - Editorial board
|
|
|
2010
|
50 |
3 |
p. IFC-
1 p.
|
article
|
| 12 |
Modeling of drain current, capacitance and transconductance in thin film undoped symmetric DG MOSFETs including quantum effects
|
Mohammadi, Saeed
|
|
2010
|
50 |
3 |
p. 338-345
8 p.
|
article
|
| 13 |
Observation of halo implant from the drain side reaching the source side and vice versa in extremely short p-channel transistors
|
Lau, W.S.
|
|
2010
|
50 |
3 |
p. 346-350
5 p.
|
article
|
| 14 |
Reliability enhancement of digital combinational circuits based on evolutionary approach
|
Seyyed Mahdavi, S.J.
|
|
2010
|
50 |
3 |
p. 415-423
9 p.
|
article
|
| 15 |
Reliability growth modeling for in-service electronic systems considering latent failure modes
|
Jin, Tongdan
|
|
2010
|
50 |
3 |
p. 324-331
8 p.
|
article
|
| 16 |
Reliability Object Model Tree (ROM-Tree): A system design-for-reliability method
|
Kim, Injoong
|
|
2010
|
50 |
3 |
p. 438-446
9 p.
|
article
|
| 17 |
SrO capping effect for La2O3/Ce-silicate gate dielectrics
|
Kakushima, K.
|
|
2010
|
50 |
3 |
p. 356-359
4 p.
|
article
|
| 18 |
The frequency-dependent electrical characteristics of interfaces in the Sn/p-Si metal semiconductor structures
|
Karataş, Ş.
|
|
2010
|
50 |
3 |
p. 351-355
5 p.
|
article
|
| 19 |
The use of Mahalanobis–Taguchi System to improve flip-chip bumping height inspection efficiency
|
Yang, Taho
|
|
2010
|
50 |
3 |
p. 407-414
8 p.
|
article
|
| 20 |
Warpage mechanism analyses of strip panel type PBGA chip packaging
|
Kim, Yeong K.
|
|
2010
|
50 |
3 |
p. 398-406
9 p.
|
article
|
Journal description