| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A 28,000 channel frequency synthesizer in 10 cubic inches
|
|
|
1966
|
5 |
4 |
p. 360-
1 p.
|
artikel
|
| 2 |
A digital I.F. system for use in a thin-film radar receiver
|
|
|
1966
|
5 |
4 |
p. 359-
1 p.
|
artikel
|
| 3 |
A new functional device performing a flip-flop circuit function
|
Ambroziak, A.
|
|
1966
|
5 |
4 |
p. 343-344
2 p.
|
artikel
|
| 4 |
An experimental computer controlled trunk exchange
|
|
|
1966
|
5 |
4 |
p. 359-
1 p.
|
artikel
|
| 5 |
An investigation of instability and charge motion in metal-silicon oxide-silicon structures
|
|
|
1966
|
5 |
4 |
p. 353-354
2 p.
|
artikel
|
| 6 |
Applications of MOS Fet's in microelectronics
|
|
|
1966
|
5 |
4 |
p. 356-
1 p.
|
artikel
|
| 7 |
Applications of photo-etching in the manufacture, interconnection and packaging of microcircuits
|
|
|
1966
|
5 |
4 |
p. 358-
1 p.
|
artikel
|
| 8 |
A revolving multiple electron gun for use in the deposition of thin polymer films
|
|
|
1966
|
5 |
4 |
p. 358-
1 p.
|
artikel
|
| 9 |
A solid state store
|
|
|
1966
|
5 |
4 |
p. 360-
1 p.
|
artikel
|
| 10 |
A 180-stage integrated thin-film scan generator
|
|
|
1966
|
5 |
4 |
p. 360-361
2 p.
|
artikel
|
| 11 |
Automatic control and monitoring system for thin-film deposition
|
|
|
1966
|
5 |
4 |
p. 358-
1 p.
|
artikel
|
| 12 |
A vapour etching technique for the photolithography of silicon dioxide
|
Holmes, P.J.
|
|
1966
|
5 |
4 |
p. 337-341
5 p.
|
artikel
|
| 13 |
Better quality, lower costs, through designer-fabricator communication
|
|
|
1966
|
5 |
4 |
p. 350-351
2 p.
|
artikel
|
| 14 |
Continuous electron beam processing plant for plane thin-film resistors
|
von Ardenne, M.
|
|
1966
|
5 |
4 |
p. 255-256
2 p.
|
artikel
|
| 15 |
Defect interactions and precipitation in semiconductors
|
|
|
1966
|
5 |
4 |
p. 349-
1 p.
|
artikel
|
| 16 |
Dielectric relaxation in thermally grown SiO2 films
|
|
|
1966
|
5 |
4 |
p. 355-
1 p.
|
artikel
|
| 17 |
Diffusion-induced imperfections in silicon
|
|
|
1966
|
5 |
4 |
p. 354-
1 p.
|
artikel
|
| 18 |
Electron microscopic study of precipitates and defects in germanium and silicon
|
|
|
1966
|
5 |
4 |
p. 349-350
2 p.
|
artikel
|
| 19 |
Failure mechanisms in silicon transistors deduced from step stress tests
|
Young, M.R.P.
|
|
1966
|
5 |
4 |
p. 271-274
4 p.
|
artikel
|
| 20 |
Field effect studies of the oxidized silicon surface
|
|
|
1966
|
5 |
4 |
p. 353-
1 p.
|
artikel
|
| 21 |
Fundamental properties of microsystems with distributed resistances and capacities (Part 1)
|
|
|
1966
|
5 |
4 |
p. 349-
1 p.
|
artikel
|
| 22 |
High resistivity tantalum films
|
|
|
1966
|
5 |
4 |
p. 357-
1 p.
|
artikel
|
| 23 |
High-speed, cost-orientated integrated circuits
|
|
|
1966
|
5 |
4 |
p. 356-357
2 p.
|
artikel
|
| 24 |
Influence of heat treatments and ionizing irradiations on the charge distribution and the number of surface states in the Si-SiO2 system
|
|
|
1966
|
5 |
4 |
p. 354-
1 p.
|
artikel
|
| 25 |
Infra-red testing of microcircuits
|
|
|
1966
|
5 |
4 |
p. 351-
1 p.
|
artikel
|
| 26 |
Integrated circuits for high-speed digital systems
|
|
|
1966
|
5 |
4 |
p. 352-
1 p.
|
artikel
|
| 27 |
Introducing m.o.s.t. devices
|
|
|
1966
|
5 |
4 |
p. 356-
1 p.
|
artikel
|
| 28 |
Laser machining of thin films
|
Board, K.
|
|
1966
|
5 |
4 |
p. 251-254
4 p.
|
artikel
|
| 29 |
Liquid cooling of microcircuits, including the use of nucleate boiling
|
|
|
1966
|
5 |
4 |
p. 357-358
2 p.
|
artikel
|
| 30 |
Liquid cooling of semiconductor devices
|
|
|
1966
|
5 |
4 |
p. 357-
1 p.
|
artikel
|
| 31 |
Localized breakdown in Ge mesa diodes due to inclusions
|
Sulway, D.V.
|
|
1966
|
5 |
4 |
p. 323-324
2 p.
|
artikel
|
| 32 |
Measurement of minority carrier lifetime with a non-ohmic contact and an electron beam
|
Munakata, C.
|
|
1966
|
5 |
4 |
p. 267-268
2 p.
|
artikel
|
| 33 |
Measurement of resistivity and mobility in silicon epitaxial layers on a control wafer
|
|
|
1966
|
5 |
4 |
p. 352-
1 p.
|
artikel
|
| 34 |
Metal oxide silicon integrated circuits
|
|
|
1966
|
5 |
4 |
p. 356-
1 p.
|
artikel
|
| 35 |
Microelectronic integrated system cells (MISC)
|
|
|
1966
|
5 |
4 |
p. 361-
1 p.
|
artikel
|
| 36 |
Micromachining with a pulsed gas laser
|
|
|
1966
|
5 |
4 |
p. 352-
1 p.
|
artikel
|
| 37 |
Microstructural properties of thermally grown silicon dioxide layers
|
|
|
1966
|
5 |
4 |
p. 355-
1 p.
|
artikel
|
| 38 |
Modern basic concepts in component part reliability
|
Ryerson, C.M.
|
|
1966
|
5 |
4 |
p. 239-250
12 p.
|
artikel
|
| 39 |
Multiple faults and confidence levels resolution of a paradox
|
Briggs, N.H.
|
|
1966
|
5 |
4 |
p. 265-266
2 p.
|
artikel
|
| 40 |
Observation of double injection in long p+pn+ diffused silicon junctions and some related effects
|
|
|
1966
|
5 |
4 |
p. 352-
1 p.
|
artikel
|
| 41 |
Observations on phosphorus stabilized SiO2 films
|
|
|
1966
|
5 |
4 |
p. 354-355
2 p.
|
artikel
|
| 42 |
On the reliability of polymorphic systems
|
|
|
1966
|
5 |
4 |
p. 351-
1 p.
|
artikel
|
| 43 |
Open-base breakdown in diffused n-p-n junction transistors
|
|
|
1966
|
5 |
4 |
p. 350-
1 p.
|
artikel
|
| 44 |
Optical alignment equipment for interconnecting semiconductor integrated circuits at slice level
|
Price, T.E.
|
|
1966
|
5 |
4 |
p. 347-348
2 p.
|
artikel
|
| 45 |
Optimizing the location of faults of electronic equipment using the theory of information
|
|
|
1966
|
5 |
4 |
p. 350-
1 p.
|
artikel
|
| 46 |
Physics of failure and accelerated testing
|
|
|
1966
|
5 |
4 |
p. 349-
1 p.
|
artikel
|
| 47 |
Possibilities and limits of increasing reliability in communication engineering by redundancy (Part 1)
|
|
|
1966
|
5 |
4 |
p. 351-
1 p.
|
artikel
|
| 48 |
Principles of majority logic passive redundancy
|
|
|
1966
|
5 |
4 |
p. 351-
1 p.
|
artikel
|
| 49 |
Programmed testing of integrated circuits
|
|
|
1966
|
5 |
4 |
p. 351-
1 p.
|
artikel
|
| 50 |
Properties of gold in silicon
|
|
|
1966
|
5 |
4 |
p. 355-
1 p.
|
artikel
|
| 51 |
Quantitative measurements by scanning electron microscopy-II. The use of emissive micrographs
|
Thornton, P.R.
|
|
1966
|
5 |
4 |
p. 299-300
2 p.
|
artikel
|
| 52 |
Quantitative measurements by scanning electron microscopy—I. The use of conductivity maps
|
Thornton, P.R.
|
|
1966
|
5 |
4 |
p. 291-292
2 p.
|
artikel
|
| 53 |
Reducing analog IC cost with multipurpose chips
|
|
|
1966
|
5 |
4 |
p. 359-
1 p.
|
artikel
|
| 54 |
Reliability of communication equipment as seen from an economic point of view
|
|
|
1966
|
5 |
4 |
p. 349-
1 p.
|
artikel
|
| 55 |
Resistances and capacitors for semiconductor block circuits
|
|
|
1966
|
5 |
4 |
p. 352-
1 p.
|
artikel
|
| 56 |
Solid circuit design considerations
|
|
|
1966
|
5 |
4 |
p. 360-
1 p.
|
artikel
|
| 57 |
Some of the papers to be published in future issues
|
|
|
1966
|
5 |
4 |
p. 363-
1 p.
|
artikel
|
| 58 |
Surface photovoltage measurements in vapour-deposited CdS
|
|
|
1966
|
5 |
4 |
p. 358-
1 p.
|
artikel
|
| 59 |
Test-system design
|
|
|
1966
|
5 |
4 |
p. 350-
1 p.
|
artikel
|
| 60 |
The chemistry of failure of aluminium electrolytic capacitors
|
|
|
1966
|
5 |
4 |
p. 349-
1 p.
|
artikel
|
| 61 |
The design of a 100 Mc/s thin-film integrated amplifier
|
|
|
1966
|
5 |
4 |
p. 359-
1 p.
|
artikel
|
| 62 |
The direct observation of electrical leakage paths due to crystal defects by use of the scanning electron microscope
|
|
|
1966
|
5 |
4 |
p. 350-
1 p.
|
artikel
|
| 63 |
The effect of composition on the temperature coefficient of resistance of NiCr films
|
|
|
1966
|
5 |
4 |
p. 357-
1 p.
|
artikel
|
| 64 |
The effect of heavy doping on the diffusion of impurities in silicon
|
|
|
1966
|
5 |
4 |
p. 353-
1 p.
|
artikel
|
| 65 |
The electrical properties of vacuum and chemically deposited thin and thick resistive films
|
Jones, D.E.H.
|
|
1966
|
5 |
4 |
p. 305-321
17 p.
|
artikel
|
| 66 |
The fly's-eye camera
|
|
|
1966
|
5 |
4 |
p. 351-
1 p.
|
artikel
|
| 67 |
The influence of oxidation rate and heat treatment on the Si surface potential in the Si-SiO2 system
|
|
|
1966
|
5 |
4 |
p. 354-
1 p.
|
artikel
|
| 68 |
The manufacture of thin-film circuits for use in airborne equipment
|
|
|
1966
|
5 |
4 |
p. 361-
1 p.
|
artikel
|
| 69 |
The origin of channel currents associated with p+ regions in silicon
|
|
|
1966
|
5 |
4 |
p. 353-
1 p.
|
artikel
|
| 70 |
The problem of silicon evaporation in producing epitaxial films
|
|
|
1966
|
5 |
4 |
p. 356-
1 p.
|
artikel
|
| 71 |
Thermal growth and chemical etching of silicon dioxide films
|
|
|
1966
|
5 |
4 |
p. 353-
1 p.
|
artikel
|
| 72 |
The role of the ionization of defects in causing systematic differences in the semiconductor properties of undoped compounds
|
|
|
1966
|
5 |
4 |
p. 350-
1 p.
|
artikel
|
| 73 |
The transient response of insulated-gate field-effect transistors
|
|
|
1966
|
5 |
4 |
p. 356-
1 p.
|
artikel
|
| 74 |
The use of amplifier blocks as standard components
|
|
|
1966
|
5 |
4 |
p. 361-
1 p.
|
artikel
|
| 75 |
The use of equivalent networks to minimize the tolerance of passive thin film circuits
|
Neuman, M.R.
|
|
1966
|
5 |
4 |
p. 329-335
7 p.
|
artikel
|
| 76 |
Transients in thin-film RC networks
|
|
|
1966
|
5 |
4 |
p. 357-
1 p.
|
artikel
|
| 77 |
Å university clean room
|
|
|
1966
|
5 |
4 |
p. 352-
1 p.
|
artikel
|
| 78 |
Worst-case circuit design
|
|
|
1966
|
5 |
4 |
p. 351-
1 p.
|
artikel
|
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