nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A practical investigation on nickel plated copper heat spreader with different catalytic activation processes for flip-chip ball grid array packages
|
Amin, Nowshad |
|
2009 |
49 |
5 |
p. 537-543 7 p. |
artikel |
2 |
Calendar
|
|
|
2009 |
49 |
5 |
p. I-III nvt p. |
artikel |
3 |
Chip-on board technology for low temperature environment. Part II: Thermomechanical stresses in encapsulated ball–wedge bond wires
|
Jinka, K.K. |
|
2009 |
49 |
5 |
p. 523-529 7 p. |
artikel |
4 |
Determining DC/RF survivability limits of GaAs semiconductor circuits
|
Gil, C. |
|
2009 |
49 |
5 |
p. 484-487 4 p. |
artikel |
5 |
Editorial
|
Ersland, Peter |
|
2009 |
49 |
5 |
p. 467- 1 p. |
artikel |
6 |
Effect of bump size on current density and temperature distributions in flip-chip solder joints
|
Kuan, Wei-Chih |
|
2009 |
49 |
5 |
p. 544-550 7 p. |
artikel |
7 |
Effects of periphery encapsulation material on the characteristics of micro vacuum dielectric capacitor
|
Wong, Oi Ying |
|
2009 |
49 |
5 |
p. 506-509 4 p. |
artikel |
8 |
Effects of soft segment mixtures with different molecular weight on the properties and reliability of UV curable adhesives for electrodes protection of plasma display panel (PDP)
|
Hwang, Jin-Sang |
|
2009 |
49 |
5 |
p. 517-522 6 p. |
artikel |
9 |
Formation of Ohmic contacts in AlGaN/GaN HEMT structures at 500°C by Ohmic contact recess etching
|
Lau, W.S. |
|
2009 |
49 |
5 |
p. 558-561 4 p. |
artikel |
10 |
High-accurate computation of wave propagation in complex waveguides for microchip optical interconnections
|
Zhu, Jianxin |
|
2009 |
49 |
5 |
p. 562-565 4 p. |
artikel |
11 |
Inside front cover - Editorial board
|
|
|
2009 |
49 |
5 |
p. IFC- 1 p. |
artikel |
12 |
Investigation and simulation on the dynamic shock response performance of packaged high-g MEMS accelerometer versus the impurity concentration of the piezoresistor
|
Yang, Zunxian |
|
2009 |
49 |
5 |
p. 510-516 7 p. |
artikel |
13 |
Obtaining FPGA soft error rate in high performance information systems
|
Tahoori, M.B. |
|
2009 |
49 |
5 |
p. 551-557 7 p. |
artikel |
14 |
On the accurate determination of the thermomechanical properties of micro-scale material: Application to AlSi1% chip metallization of a power semiconductor device
|
Sauveplane, J.B. |
|
2009 |
49 |
5 |
p. 499-505 7 p. |
artikel |
15 |
Physical degradation of GaN HEMT devices under high drain bias reliability testing
|
Park, S.Y. |
|
2009 |
49 |
5 |
p. 478-483 6 p. |
artikel |
16 |
Prediction of transmission line lifetimes over temperature and current density
|
Whitman, Charles S. |
|
2009 |
49 |
5 |
p. 488-494 7 p. |
artikel |
17 |
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
|
Dammann, M. |
|
2009 |
49 |
5 |
p. 474-477 4 p. |
artikel |
18 |
Reliability study of board-level lead-free interconnections under sequential thermal cycling and drop impact
|
Zhang, Bo |
|
2009 |
49 |
5 |
p. 530-536 7 p. |
artikel |
19 |
ROCS 2009 Call for Papers
|
|
|
2009 |
49 |
5 |
p. IV- 1 p. |
artikel |
20 |
Temperature dependent time-to-breakdown (T BD) of TiN/HfO2 n-channel MOS devices in inversion
|
Chowdhury, N.A. |
|
2009 |
49 |
5 |
p. 495-498 4 p. |
artikel |
21 |
Three-dimensional finite-element thermal simulation of GaN-based HEMTs
|
Bertoluzza, F. |
|
2009 |
49 |
5 |
p. 468-473 6 p. |
artikel |