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                             21 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A practical investigation on nickel plated copper heat spreader with different catalytic activation processes for flip-chip ball grid array packages Amin, Nowshad
2009
49 5 p. 537-543
7 p.
artikel
2 Calendar 2009
49 5 p. I-III
nvt p.
artikel
3 Chip-on board technology for low temperature environment. Part II: Thermomechanical stresses in encapsulated ball–wedge bond wires Jinka, K.K.
2009
49 5 p. 523-529
7 p.
artikel
4 Determining DC/RF survivability limits of GaAs semiconductor circuits Gil, C.
2009
49 5 p. 484-487
4 p.
artikel
5 Editorial Ersland, Peter
2009
49 5 p. 467-
1 p.
artikel
6 Effect of bump size on current density and temperature distributions in flip-chip solder joints Kuan, Wei-Chih
2009
49 5 p. 544-550
7 p.
artikel
7 Effects of periphery encapsulation material on the characteristics of micro vacuum dielectric capacitor Wong, Oi Ying
2009
49 5 p. 506-509
4 p.
artikel
8 Effects of soft segment mixtures with different molecular weight on the properties and reliability of UV curable adhesives for electrodes protection of plasma display panel (PDP) Hwang, Jin-Sang
2009
49 5 p. 517-522
6 p.
artikel
9 Formation of Ohmic contacts in AlGaN/GaN HEMT structures at 500°C by Ohmic contact recess etching Lau, W.S.
2009
49 5 p. 558-561
4 p.
artikel
10 High-accurate computation of wave propagation in complex waveguides for microchip optical interconnections Zhu, Jianxin
2009
49 5 p. 562-565
4 p.
artikel
11 Inside front cover - Editorial board 2009
49 5 p. IFC-
1 p.
artikel
12 Investigation and simulation on the dynamic shock response performance of packaged high-g MEMS accelerometer versus the impurity concentration of the piezoresistor Yang, Zunxian
2009
49 5 p. 510-516
7 p.
artikel
13 Obtaining FPGA soft error rate in high performance information systems Tahoori, M.B.
2009
49 5 p. 551-557
7 p.
artikel
14 On the accurate determination of the thermomechanical properties of micro-scale material: Application to AlSi1% chip metallization of a power semiconductor device Sauveplane, J.B.
2009
49 5 p. 499-505
7 p.
artikel
15 Physical degradation of GaN HEMT devices under high drain bias reliability testing Park, S.Y.
2009
49 5 p. 478-483
6 p.
artikel
16 Prediction of transmission line lifetimes over temperature and current density Whitman, Charles S.
2009
49 5 p. 488-494
7 p.
artikel
17 Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems Dammann, M.
2009
49 5 p. 474-477
4 p.
artikel
18 Reliability study of board-level lead-free interconnections under sequential thermal cycling and drop impact Zhang, Bo
2009
49 5 p. 530-536
7 p.
artikel
19 ROCS 2009 Call for Papers 2009
49 5 p. IV-
1 p.
artikel
20 Temperature dependent time-to-breakdown (T BD) of TiN/HfO2 n-channel MOS devices in inversion Chowdhury, N.A.
2009
49 5 p. 495-498
4 p.
artikel
21 Three-dimensional finite-element thermal simulation of GaN-based HEMTs Bertoluzza, F.
2009
49 5 p. 468-473
6 p.
artikel
                             21 gevonden resultaten
 
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