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                             100 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A case study of defects due to process marginalities in deep sub-micron technology Lin, Hung-Sung
 2007
 47 9-11 p. 1604-1608
5 p.
 artikel
2 Accelerated testing for time dependent dielectric breakdown (TDDB) evaluation of embedded DRAM capacitors using tantalum pentoxide Inani, Anand
 2007
 47 9-11 p. 1429-1433
5 p.
 artikel
3 A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories Pic, D.
 2007
 47 9-11 p. 1373-1377
5 p.
 artikel
4 Active ESD protection circuit design against charged-device-model ESD event in CMOS integrated circuits Chen, Shih-Hung
 2007
 47 9-11 p. 1502-1505
4 p.
 artikel
5 Advanced backside failure analysis in 65nm CMOS technology Bianic, Stephane
 2007
 47 9-11 p. 1550-1554
5 p.
 artikel
6 Analysis of ESD protection structure behaviour after ageing as new approach for system level reliability of automotive power devices Goroll, Michael
 2007
 47 9-11 p. 1512-1516
5 p.
 artikel
7 Analysis of hot carrier effects in a 0.35μm high voltage n-channel LDMOS transistor Enichlmair, H.
 2007
 47 9-11 p. 1439-1443
5 p.
 artikel
8 An approach to statistical analysis of gate oxide breakdown mechanisms Tan, Cher Ming
 2007
 47 9-11 p. 1336-1342
7 p.
 artikel
9 A new method to quantify retention-failed cells of an EEPROM CAST Le Roux, C.
 2007
 47 9-11 p. 1609-1613
5 p.
 artikel
10 A novel SIMS based approach to the characterization of the channel doping profile of a trench MOSFET Zelsacher, R.
 2007
 47 9-11 p. 1585-1589
5 p.
 artikel
11 Application of time resolved emission techniques within the failure analysis flow Egger, Peter
 2007
 47 9-11 p. 1545-1549
5 p.
 artikel
12 Applications of DCIV method to NBTI characterization Neugroschel, A.
 2007
 47 9-11 p. 1366-1372
7 p.
 artikel
13 A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D physically based device simulation Benmansour, A.
 2007
 47 9-11 p. 1800-1805
6 p.
 artikel
14 A study of metamorphic HEMT technological improvements: Impact on parasitic effect electrical models Pajona, O.
 2007
 47 9-11 p. 1643-1648
6 p.
 artikel
15 A study of the threshold-voltage suitability as an application-related reliability indicator for planar-gate non-punch-through IGBTs Castellazzi, A.
 2007
 47 9-11 p. 1713-1718
6 p.
 artikel
16 Backend dielectric breakdown dependence on linewidth and pattern density Milor, Linda
 2007
 47 9-11 p. 1473-1477
5 p.
 artikel
17 Backside interferometric methods for localization of ESD-induced leakage current and metal shorts Dubec, V.
 2007
 47 9-11 p. 1539-1544
6 p.
 artikel
18 Black’s law revisited—Nucleation and growth in electromigration failure Lloyd, J.R.
 2007
 47 9-11 p. 1468-1472
5 p.
 artikel
19 Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs Faqir, M.
 2007
 47 9-11 p. 1639-1642
4 p.
 artikel
20 Characterization and modelling of ageing failures on power MOSFET devices Khong, B.
 2007
 47 9-11 p. 1735-1740
6 p.
 artikel
21 Characterization of moisture properties of polymers for IC packaging Ma, Xiaosong
 2007
 47 9-11 p. 1685-1689
5 p.
 artikel
22 Comparative study of NBTI as a function of Si film orientation and thickness in SOI pMOSFETs Jang, Sung Jun
 2007
 47 9-11 p. 1411-1415
5 p.
 artikel
23 Configuration errors analysis in SRAM-based FPGAs: Software tool and practical results Maingot, V.
 2007
 47 9-11 p. 1836-1840
5 p.
 artikel
24 Degradation behavior of 600V–200A IGBT modules under power cycling and high temperature environment conditions Bouarroudj, M.
 2007
 47 9-11 p. 1719-1724
6 p.
 artikel
25 Degradation mechanism understanding of NLDEMOS SOI in RF applications Lachenal, D.
 2007
 47 9-11 p. 1634-1638
5 p.
 artikel
26 Degradation of double-gate polycrystalline silicon TFTs due to hot carrier stress Farmakis, F.V.
 2007
 47 9-11 p. 1434-1438
5 p.
 artikel
27 Device decapsulated (and/or depassivated) – Retest ok – What happened? Jacob, Peter
 2007
 47 9-11 p. 1574-1579
6 p.
 artikel
28 3D failure analysis in depth profiles of sequentially made FIB cuts Mc Auley, C.N.
 2007
 47 9-11 p. 1595-1598
4 p.
 artikel
29 Dynamic laser stimulation techniques for advanced failure analysis and design debug applications Beaudoin, F.
 2007
 47 9-11 p. 1517-1522
6 p.
 artikel
30 Editorial Labat, Nathalie
 2007
 47 9-11 p. 1311-1312
2 p.
 artikel
31 Effects of atmospheric neutrons on devices, at sea level and in avionics embedded systems Leray, J.L.
 2007
 47 9-11 p. 1827-1835
9 p.
 artikel
32 Electrostatic discharge failure analysis of capacitive RF MEMS switches Ruan, J.
 2007
 47 9-11 p. 1818-1822
5 p.
 artikel
33 Enhanced finite element modelling of Cu electromigration using ANSYS and matlab Li, Wei
 2007
 47 9-11 p. 1497-1501
5 p.
 artikel
34 ESD protection strategies in advanced CMOS SOI ICs Khazhinsky, M.G.
 2007
 47 9-11 p. 1313-1321
9 p.
 artikel
35 Exceptional operative gate voltage induces negative bias temperature instability (NBTI) on n-type trench DMOS transistors Aresu, S.
 2007
 47 9-11 p. 1416-1418
3 p.
 artikel
36 Experimental and numerical analysis of current flow homogeneity in low voltage SOI multi-finger gg-NMOS and NPN ESD protection devices Heer, M.
 2007
 47 9-11 p. 1450-1455
6 p.
 artikel
37 Failure modes on low voltage power MOSFETs under high temperature application Dupont, L.
 2007
 47 9-11 p. 1767-1772
6 p.
 artikel
38 Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneities Perpiñà, X.
 2007
 47 9-11 p. 1784-1789
6 p.
 artikel
39 Fault localization at high voltage devices using thermally induced voltage alteration (TIVA) Reissner, M.
 2007
 47 9-11 p. 1561-1564
4 p.
 artikel
40 Field failure mechanism and improvement of EOS failure of integrated IGBT inverter modules Jeong, Jae-Seong
 2007
 47 9-11 p. 1795-1799
5 p.
 artikel
41 Finite element modeling of capacitive coupling voltage contrast Tan, Cher Ming
 2007
 47 9-11 p. 1555-1560
6 p.
 artikel
42 Flexible active cycle stress testing of smart power switches Glavanovics, Michael
 2007
 47 9-11 p. 1790-1794
5 p.
 artikel
43 Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT stresses Alwan, M.
 2007
 47 9-11 p. 1406-1410
5 p.
 artikel
44 High temperature electro-optical degradation of InGaN/GaN HBLEDs Meneghini, M.
 2007
 47 9-11 p. 1625-1629
5 p.
 artikel
45 High voltage transistor degradation in NVM pump application Bottini, R.
 2007
 47 9-11 p. 1384-1388
5 p.
 artikel
46 Holding voltage investigation of advanced SCR-based protection structures for CMOS technology Tazzoli, A.
 2007
 47 9-11 p. 1444-1449
6 p.
 artikel
47 Identification of the physical signatures of CDM induced latent defects into a DC–DC converter using low frequency noise measurements Gao, Y.
 2007
 47 9-11 p. 1456-1461
6 p.
 artikel
48 Importance of multi-temp testing in automotive qualification and zero defects program Wang, Z.
 2007
 47 9-11 p. 1358-1361
4 p.
 artikel
49 Influence of polysilicon film thickness on radiation response of advanced excimer laser annealed polycrystalline silicon thin film transistors Davidović, V.
 2007
 47 9-11 p. 1841-1845
5 p.
 artikel
50 Influence of the manufacturing process on the electrical properties of thin (<4nm) Hafnium based high-k stacks observed with CAFM Lanza, M.
 2007
 47 9-11 p. 1424-1428
5 p.
 artikel
51 Investigation of a new method for dopant characterization Adrian, J.
 2007
 47 9-11 p. 1599-1603
5 p.
 artikel
52 Investigation of low temperature SRAM and ROM failures to enable the replacement of cold test insertion by room temperature test Müller, Stefan
 2007
 47 9-11 p. 1362-1365
4 p.
 artikel
53 Investigation of moisture-induced failures of stacked-die package Kim, Hak Sung
 2007
 47 9-11 p. 1673-1679
7 p.
 artikel
54 Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs Martín-Martínez, J.
 2007
 47 9-11 p. 1349-1352
4 p.
 artikel
55 Lifetime modeling of intrinsic gate oxide breakdown at high temperature Moonen, R.
 2007
 47 9-11 p. 1389-1393
5 p.
 artikel
56 Localization of sensitive areas of power AC switch under thermal laser stimulation Debleds, S.
 2007
 47 9-11 p. 1569-1573
5 p.
 artikel
57 Local thermal cycles determination in thermosyphon-cooled traction IGBT modules reproducing mission profiles Perpiñà, X.
 2007
 47 9-11 p. 1701-1706
6 p.
 artikel
58 Long-term reliability of silicon bipolar transistors subjected to low constraints Crosson, A.
 2007
 47 9-11 p. 1590-1594
5 p.
 artikel
59 Measurement of the transient junction temperature in MOSFET devices under operating conditions Barlini, D.
 2007
 47 9-11 p. 1707-1712
6 p.
 artikel
60 Mechanical reliability challenges for MEMS packages: Capping van Driel, W.D.
 2007
 47 9-11 p. 1823-1826
4 p.
 artikel
61 Modeling of the breakdown mechanisms for porous copper/low-k process flows Hong, Changsoo
 2007
 47 9-11 p. 1478-1482
5 p.
 artikel
62 Molecular simulation on the material/interfacial strength of the low-dielectric materials Yuan, Cadmus A.
 2007
 47 9-11 p. 1483-1491
9 p.
 artikel
63 Monitoring fading rate of ultracapacitors using online characterization during power cycling Lajnef, W.
 2007
 47 9-11 p. 1751-1755
5 p.
 artikel
64 Near-field EMC study to improve electronic component reliability Duchamp, G.
 2007
 47 9-11 p. 1668-1672
5 p.
 artikel
65 Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs Danković, D.
 2007
 47 9-11 p. 1400-1405
6 p.
 artikel
66 New developments of THERMOS3, a tool for 3D electro-thermal simulation of smart power MOSFETs Irace, Andrea
 2007
 47 9-11 p. 1696-1700
5 p.
 artikel
67 Non destructive 3D chip inspection with nano scale potential by use of backside FIB and backscattered electron microscopy Schlangen, R.
 2007
 47 9-11 p. 1523-1528
6 p.
 artikel
68 Numerical analysis and comparative study of short circuit stress in IGBTs devices (IR, IXYS) Benbahouche, Ly.
 2007
 47 9-11 p. 1773-1778
6 p.
 artikel
69 OBIRCH analysis of electrically stressed advanced graphic ICs Liao, J.Y.
 2007
 47 9-11 p. 1565-1568
4 p.
 artikel
70 Oxide reliability below 3nm for advanced CMOS: Issues, characterization, and solutions Goguenheim, D.
 2007
 47 9-11 p. 1322-1329
8 p.
 artikel
71 Performance and reliability of SLS ELA polysilicon TFTs fabricated with novel crystallization techniques Moschou, D.C.
 2007
 47 9-11 p. 1378-1383
6 p.
 artikel
72 Preliminary reliability assessment and failure physical analysis on AlGaN/GaN HEMTs COTS Burgaud, P.
 2007
 47 9-11 p. 1653-1657
5 p.
 artikel
73 Reliability assessment for solders with a stress buffer layer using ball shear strength test and board-level finite element analysis Yew, Ming-Chih
 2007
 47 9-11 p. 1658-1662
5 p.
 artikel
74 Reliability assessment of multi-via Cu-damascene structures by wafer-level isothermal electromigration tests Marras, A.
 2007
 47 9-11 p. 1492-1496
5 p.
 artikel
75 Reliability considerations for recent Infineon SiC diode releases Holz, M.
 2007
 47 9-11 p. 1741-1745
5 p.
 artikel
76 Reliability methods and standards Bisschop, J.
 2007
 47 9-11 p. 1330-1335
6 p.
 artikel
77 Reliability of interfacial adhesion in a multi-level copper/low-k interconnect structure Chiu, C.C.
 2007
 47 9-11 p. 1506-1511
6 p.
 artikel
78 Reliability of semiconductor lasers used in current communication systems and sensing equipment Fukuda, Mitsuo
 2007
 47 9-11 p. 1619-1624
6 p.
 artikel
79 Reliability of spring pressure contacts under environmental stress Lang, F.
 2007
 47 9-11 p. 1761-1766
6 p.
 artikel
80 Revisiting power cycling test for better life-time prediction in traction Mermet-Guyennet, M.
 2007
 47 9-11 p. 1690-1695
6 p.
 artikel
81 Robustness test and failure analysis of IGBT modules during turn-off Urresti-Ibañez, J.
 2007
 47 9-11 p. 1725-1729
5 p.
 artikel
82 Room temperature observation of point defect on gold surface using thermovoltage mapping Roy, Arijit
 2007
 47 9-11 p. 1580-1584
5 p.
 artikel
83 Science-based MEMS reliability methodology Tanner, D.M.
 2007
 47 9-11 p. 1806-1811
6 p.
 artikel
84 Sequential environmental stresses tests qualification for automotive components Bahi, M.A.
 2007
 47 9-11 p. 1680-1684
5 p.
 artikel
85 Statistical analysis during the reliability simulation Bestory, C.
 2007
 47 9-11 p. 1353-1357
5 p.
 artikel
86 Structure dependent charging process in RF MEMS capacitive switches Papandreou, E.
 2007
 47 9-11 p. 1812-1817
6 p.
 artikel
87 Study of a failure mechanism during UIS switching of planar PT-IGBT with current sense cell Breglio, G.
 2007
 47 9-11 p. 1756-1760
5 p.
 artikel
88 Study of hot-carrier effects on power RF LDMOS device reliability Gares, M.
 2007
 47 9-11 p. 1394-1399
6 p.
 artikel
89 Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC Bouya, M.
 2007
 47 9-11 p. 1630-1633
4 p.
 artikel
90 Thermal analysis of InGaN/GaN (GaN substrate) laser diodes using transient interferometric mapping Bychikhin, S.
 2007
 47 9-11 p. 1649-1652
4 p.
 artikel
91 Thermal approach of defects generation on copper/organic dielectric interface due to SEM inspections de Morais, L. Dantas
 2007
 47 9-11 p. 1614-1618
5 p.
 artikel
92 Thermal fatigue effects on the temperature distribution inside IGBT modules for zone engine aeronautical applications Lhommeau, T.
 2007
 47 9-11 p. 1779-1783
5 p.
 artikel
93 The robustness of series-connected high power IGBT modules Abbate, C.
 2007
 47 9-11 p. 1746-1750
5 p.
 artikel
94 Three-dimensional nanometric sub-surface imaging of a silicon flip-chip using the two-photon optical beam induced current method Ramsay, E.
 2007
 47 9-11 p. 1534-1538
5 p.
 artikel
95 Time resolved determination of electrical field distributions within dynamically biased power devices by spectral EBIC investigations Pugatschow, A.
 2007
 47 9-11 p. 1529-1533
5 p.
 artikel
96 TLP Characterization of large gate width devices Coppens, P.
 2007
 47 9-11 p. 1462-1467
6 p.
 artikel
97 Torsion test applied for reballing and solder paste volume evaluation Maia Filho, W.C.
 2007
 47 9-11 p. 1663-1667
5 p.
 artikel
98 Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions Benmansour, A.
 2007
 47 9-11 p. 1730-1734
5 p.
 artikel
99 Two-dimensional numerical simulations of 1/f noise by GR mechanisms in thin film transistors: Effects of induced defect technology Boukhenoufa, A.
 2007
 47 9-11 p. 1419-1423
5 p.
 artikel
100 Virtual reliability assessment of integrated power switches based on multi-domain simulation approach Solomalala, P.
 2007
 47 9-11 p. 1343-1348
6 p.
 artikel
                             100 gevonden resultaten
 
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