| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A symbolic approach to design centering of analog circuits
|
Grasso, Francesco
|
|
2007
|
47 |
8 |
p. 1288-1295
8 p.
|
artikel
|
| 2 |
Characterisation and passivation of interface defects in (100)-Si/SiO2/HfO2/TiN gate stacks
|
Hurley, P.K.
|
|
2007
|
47 |
8 |
p. 1195-1201
7 p.
|
artikel
|
| 3 |
Chip-on-Board (CoB) technology for low temperature environments. Part I: Wire profile modeling in unencapsulated chips
|
Jinka, K.K.
|
|
2007
|
47 |
8 |
p. 1246-1250
5 p.
|
artikel
|
| 4 |
Cohesive zone modeling for structural integrity analysis of IC interconnects
|
van Hal, B.A.E.
|
|
2007
|
47 |
8 |
p. 1251-1261
11 p.
|
artikel
|
| 5 |
Comparison between BSIM4.X and HSPICE flicker noise models in NMOS and PMOS transistors in all operating regions
|
Noulis, T.
|
|
2007
|
47 |
8 |
p. 1222-1227
6 p.
|
artikel
|
| 6 |
Correlating gate sinking and electrical performance of pseudomorphic high electron mobility transistors
|
Berechman, Ronen A.
|
|
2007
|
47 |
8 |
p. 1202-1207
6 p.
|
artikel
|
| 7 |
Correlation between localized strain and damage in shear-loaded Pb-free solders
|
Matin, M.A.
|
|
2007
|
47 |
8 |
p. 1262-1272
11 p.
|
artikel
|
| 8 |
Defining the safe operating area for HBTs with an InGaP emitter across temperature and current density
|
Whitman, Charles S.
|
|
2007
|
47 |
8 |
p. 1166-1174
9 p.
|
artikel
|
| 9 |
Determination of transistor infant failure probability in InGaP/GaAs heterojunction bipolar technology
|
Alt, K.W.
|
|
2007
|
47 |
8 |
p. 1175-1179
5 p.
|
artikel
|
| 10 |
Effect of oval defects in GaAs on the reliability of SiN x metal–insulator–metal capacitors
|
van der Wel, P.J.
|
|
2007
|
47 |
8 |
p. 1188-1193
6 p.
|
artikel
|
| 11 |
Electromigration of Sn–37Pb and Sn–3Ag–1.5Cu/Sn–3Ag–0.5Cu composite flip–chip solder bumps with Ti/Ni(V)/Cu under bump metallurgy
|
Lai, Yi-Shao
|
|
2007
|
47 |
8 |
p. 1273-1279
7 p.
|
artikel
|
| 12 |
Field returns, a source of natural failure mechanisms
|
Roesch, William J.
|
|
2007
|
47 |
8 |
p. 1156-1165
10 p.
|
artikel
|
| 13 |
First-principles study of the effects of oxygen vacancy on hole tunneling current
|
Mao, L.F.
|
|
2007
|
47 |
8 |
p. 1213-1217
5 p.
|
artikel
|
| 14 |
Improved low frequency noise characteristics of sub-micron MOSFETs with TaSiN/TiN gate on ALD HfO2 dielectric
|
Devireddy, Siva Prasad
|
|
2007
|
47 |
8 |
p. 1228-1232
5 p.
|
artikel
|
| 15 |
Influence of thermal contact resistance on thermal impedance of microelectronic structures
|
Vermeersch, B.
|
|
2007
|
47 |
8 |
p. 1233-1238
6 p.
|
artikel
|
| 16 |
Low frequency noise and technology induced mechanical stress in MOSFETs
|
Fantini, Paolo
|
|
2007
|
47 |
8 |
p. 1218-1221
4 p.
|
artikel
|
| 17 |
[No title]
|
Ersland, Peter
|
|
2007
|
47 |
8 |
p. 1155-
1 p.
|
artikel
|
| 18 |
[No title]
|
Stojcev, Mile
|
|
2007
|
47 |
8 |
p. 1308-1309
2 p.
|
artikel
|
| 19 |
[No title]
|
Stojcev, Mile
|
|
2007
|
47 |
8 |
p. 1306-1307
2 p.
|
artikel
|
| 20 |
On the failure path in shear-tested solder joints
|
Moy, W.H.
|
|
2007
|
47 |
8 |
p. 1300-1305
6 p.
|
artikel
|
| 21 |
Reliability and performance of a true enhancement mode HIGFET for wireless applications
|
Gaw, Craig
|
|
2007
|
47 |
8 |
p. 1180-1187
8 p.
|
artikel
|
| 22 |
Response spectra analysis for undamped structural systems subjected to half-sine impact acceleration pulses
|
Tsai, Tsung-Yueh
|
|
2007
|
47 |
8 |
p. 1239-1245
7 p.
|
artikel
|
| 23 |
Studies on solder bump electromigration in Cu/Sn–3Ag–0.5Cu/Cu system
|
Yamanaka, Kimihiro
|
|
2007
|
47 |
8 |
p. 1280-1287
8 p.
|
artikel
|
| 24 |
Switching times variation of power MOSFET devices after electrical stress
|
Habchi, R.
|
|
2007
|
47 |
8 |
p. 1296-1299
4 p.
|
artikel
|
| 25 |
Very wide current-regime operation of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)
|
Cheng, Shiou-Ying
|
|
2007
|
47 |
8 |
p. 1208-1212
5 p.
|
artikel
|
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