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                             83 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Accurate determination of flat band voltage in advanced MOS structure Leroux, Charles
 2007
 47 4-5 p. 660-664
5 p.
 artikel
2 An investigation of surface state capture cross-sections for metal–oxide–semiconductor field-effect transistors using HfO2 gate dielectrics Chiu, Fu-Chien
 2007
 47 4-5 p. 548-551
4 p.
 artikel
3 Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon Grekhov, I.V.
 2007
 47 4-5 p. 669-672
4 p.
 artikel
4 Carrier trapping in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices Currò, Giuseppe
 2007
 47 4-5 p. 798-801
4 p.
 artikel
5 Channel hot carrier effects in n-MOSFET devices of advanced submicron CMOS technologies La Rosa, Giuseppe
 2007
 47 4-5 p. 552-558
7 p.
 artikel
6 Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C–V technique Puzzilli, Giuseppina
 2007
 47 4-5 p. 508-512
5 p.
 artikel
7 Characterizations of high resistivity TiN x O y thin films for applications in thin film resistors Cuong, Nguyen Duy
 2007
 47 4-5 p. 752-754
3 p.
 artikel
8 Charge accumulation in the dielectric of the nanocluster NVM MOS structures under anti- and unipolar W/E window formation Turchanikov, V.
 2007
 47 4-5 p. 626-630
5 p.
 artikel
9 Charge trapping and interface states in hydrogen annealed HfO2–Si structures Gomeniuk, Y.V.
 2007
 47 4-5 p. 714-717
4 p.
 artikel
10 Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperatures Tyagulskyy, I.P.
 2007
 47 4-5 p. 726-728
3 p.
 artikel
11 Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors Lemberger, M.
 2007
 47 4-5 p. 635-639
5 p.
 artikel
12 Comparison of deposition models for a TEOS LPCVD process Holzer, Stefan
 2007
 47 4-5 p. 623-625
3 p.
 artikel
13 Correlation between infrared transmission spectra and the interface trap density of SiO2 films Vamvakas, V.Em.
 2007
 47 4-5 p. 834-837
4 p.
 artikel
14 Defects induced anomalous breakdown kinetics in Pr2O3 by micro- and nano-characterization Fiorenza, P.
 2007
 47 4-5 p. 640-644
5 p.
 artikel
15 Degradation kinetics of ultrathin HfO2 layers on Si(100) during vacuum annealing monitored with in situ XPS/LEIS and ex situ AFM Zenkevich, A.
 2007
 47 4-5 p. 657-659
3 p.
 artikel
16 Density functional theory of high-k dielectric gate stacks Demkov, Alexander A.
 2007
 47 4-5 p. 686-693
8 p.
 artikel
17 Development of a permittivity extraction method for ultra low k dielectrics integrated in advanced interconnects Cueto, O.
 2007
 47 4-5 p. 769-772
4 p.
 artikel
18 Development of embedded capacitor with bismuth-based pyrochlore thin films at low temperatures for printed circuit board applications Park, Jong-Hyun
 2007
 47 4-5 p. 755-758
4 p.
 artikel
19 Dielectric thin films for MEMS-based optical sensors Martyniuk, M.
 2007
 47 4-5 p. 733-738
6 p.
 artikel
20 Distribution and generation of traps in SiO2/Al2O3 gate stacks Crupi, Isodiana
 2007
 47 4-5 p. 525-527
3 p.
 artikel
21 Effective work function of NiSi/HfO2 gate stacks measured with X-ray photoelectron spectroscopy Lebedinskii, Yu.Yu.
 2007
 47 4-5 p. 649-652
4 p.
 artikel
22 Effect of oxide breakdown on RS latches Fernández, R.
 2007
 47 4-5 p. 581-584
4 p.
 artikel
23 Electrical and structural properties of hafnium silicate thin films Mitrovic, I.Z.
 2007
 47 4-5 p. 645-648
4 p.
 artikel
24 Electrical characterization and analysis techniques for the high-κ era Young, Chadwin D.
 2007
 47 4-5 p. 479-488
10 p.
 artikel
25 Electrical characterization of crystalline Gd2O3 gate dielectric MOSFETs fabricated by damascene metal gate technology Endres, Ralf
 2007
 47 4-5 p. 528-531
4 p.
 artikel
26 Electrical characterization of metal-oxide-high-k dielectric-oxide-semiconductor (MOHOS) structures for memory applications Hsu, Hsin-hao
 2007
 47 4-5 p. 606-609
4 p.
 artikel
27 Epitaxial growth of LaAlO3 on Si(001) using interface engineering Merckling, C.
 2007
 47 4-5 p. 540-543
4 p.
 artikel
28 Evaluation of the generation mechanisms at surface and in the bulk of the silicon by current transient technique Barletta, Giacomo
 2007
 47 4-5 p. 810-814
5 p.
 artikel
29 Experimental observations of temperature-dependent flat band voltage transients on high-k dielectrics Dueñas, S.
 2007
 47 4-5 p. 653-656
4 p.
 artikel
30 Experimental study of carrier transport in multi-layered structures Tao, Guoqiao
 2007
 47 4-5 p. 610-614
5 p.
 artikel
31 Extracting the relative dielectric constant for “high-κ layers” from CV measurements – Errors and error propagation Buiu, O.
 2007
 47 4-5 p. 678-681
4 p.
 artikel
32 Eyring acceleration model in thick nitride/oxide dielectrics Evseev, S.B.
 2007
 47 4-5 p. 748-751
4 p.
 artikel
33 Ferroelectric characteristic of group IV elements added SrBi2Ta2O9 thin films Tamura, Susumu
 2007
 47 4-5 p. 830-833
4 p.
 artikel
34 Full-band tunneling in high-κ dielectric MOS structures Sacconi, F.
 2007
 47 4-5 p. 694-696
3 p.
 artikel
35 Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability Kaczer, B.
 2007
 47 4-5 p. 559-566
8 p.
 artikel
36 Guest Editorial Lombardo, Salvatore
 2007
 47 4-5 p. 477-478
2 p.
 artikel
37 High-K dielectric deposition in 3D architectures: The case of Ta2O5 deposited with metal–organic precursor TBTDET Pinzelli, L.
 2007
 47 4-5 p. 700-703
4 p.
 artikel
38 High-K dielectrics for inter-poly application in non volatile memories Sebastiani, A.
 2007
 47 4-5 p. 598-601
4 p.
 artikel
39 High quality gate insulator film formation on SiC using by microwave-excited high-density plasma Tanaka, Koutarou
 2007
 47 4-5 p. 786-789
4 p.
 artikel
40 Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-κ dielectrics Abermann, S.
 2007
 47 4-5 p. 536-539
4 p.
 artikel
41 Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements Néau, G.
 2007
 47 4-5 p. 567-572
6 p.
 artikel
42 Improved electrical properties using SrTiO3/Y2O3 bilayer dielectrics for MIM capacitor applications Kahn, Maurice
 2007
 47 4-5 p. 773-776
4 p.
 artikel
43 Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions Amat, E.
 2007
 47 4-5 p. 544-547
4 p.
 artikel
44 Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks Reimbold, G.
 2007
 47 4-5 p. 489-496
8 p.
 artikel
45 Interface states and traps in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices Currò, Giuseppe
 2007
 47 4-5 p. 819-821
3 p.
 artikel
46 Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks Srinivasan, P.
 2007
 47 4-5 p. 501-504
4 p.
 artikel
47 Ionising radiation and electrical stress on nanocrystal memory cell array Cester, A.
 2007
 47 4-5 p. 602-605
4 p.
 artikel
48 LOCOS induced stress effects on SOI bipolar devices Privitera, S.
 2007
 47 4-5 p. 802-805
4 p.
 artikel
49 Low-frequency noise in hot-carrier degraded nMOSFETs Salm, Cora
 2007
 47 4-5 p. 577-580
4 p.
 artikel
50 Measurement of the hot carrier damage profile in LDMOS devices stressed at high drain voltage Corso, D.
 2007
 47 4-5 p. 806-809
4 p.
 artikel
51 Mechanism of O2-anneal induced V fb shifts of Ru gated stacks Li, Z.
 2007
 47 4-5 p. 518-520
3 p.
 artikel
52 Modification of porous ultra-low K dielectric by electron-beam curing Guedj, C.
 2007
 47 4-5 p. 764-768
5 p.
 artikel
53 NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase Shickova, A.
 2007
 47 4-5 p. 505-507
3 p.
 artikel
54 Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures Entner, Robert
 2007
 47 4-5 p. 697-699
3 p.
 artikel
55 Nitrogen bonding configurations near the oxynitride/silicon interface after oxynitridation in N2O ambient of a thin SiO2 gate Monforte, F.
 2007
 47 4-5 p. 822-824
3 p.
 artikel
56 Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition Taechakumput, P.
 2007
 47 4-5 p. 825-829
5 p.
 artikel
57 Optical characterization of Si-rich silicon nitride films prepared by low pressure chemical vapor deposition Vamvakas, V.Em.
 2007
 47 4-5 p. 794-797
4 p.
 artikel
58 Optimization and performance of Al2O3/GaN metal–oxide–semiconductor structures Čičo, K.
 2007
 47 4-5 p. 790-793
4 p.
 artikel
59 Optimization of HfSiON using a design of experiment (DOE) approach on 0.45V V t Ni-FUSI CMOS transistors Rothschild, A.
 2007
 47 4-5 p. 521-524
4 p.
 artikel
60 Parameters extraction of hafnium based gate oxide capacitors Nguyen, T.
 2007
 47 4-5 p. 729-732
4 p.
 artikel
61 Passivation issues in active pixel CMOS image sensors Regolini, J.L.
 2007
 47 4-5 p. 739-742
4 p.
 artikel
62 Peculiarities of electron tunnel injection to the drain of EEPROMs Baboux, N.
 2007
 47 4-5 p. 631-634
4 p.
 artikel
63 Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films Farrell, R.A.
 2007
 47 4-5 p. 759-763
5 p.
 artikel
64 Post deposition annealing studies of lanthanum aluminate and ceria high-k dielectrics on germanium Galata, S.F.
 2007
 47 4-5 p. 532-535
4 p.
 artikel
65 Quantitative oxide charge determination by photocurrent analysis Rommel, M.
 2007
 47 4-5 p. 673-677
5 p.
 artikel
66 Random telegraph signal: A sensitive and nondestructive tool for gate oxide single trap characterization Leyris, C.
 2007
 47 4-5 p. 573-576
4 p.
 artikel
67 Refined electrical analysis of two charge states transition characteristic of “borderless” silicon nitride Beylier, G.
 2007
 47 4-5 p. 743-747
5 p.
 artikel
68 Reliability aspects of Hf-based capacitors: Breakdown and trapping effects Duschl, R.
 2007
 47 4-5 p. 497-500
4 p.
 artikel
69 Reliability of HTO based high-voltage gate stacks for flash memories Raskin, Yosef
 2007
 47 4-5 p. 615-618
4 p.
 artikel
70 Reliability screening of high-k dielectrics based on voltage ramp stress Kerber, A.
 2007
 47 4-5 p. 513-517
5 p.
 artikel
71 RTA effects on the formation process of embedded luminescent Si nanocrystals in SiO2 Iwayama, T.S.
 2007
 47 4-5 p. 781-785
5 p.
 artikel
72 Silicon nanocrystal non-volatile memory for embedded memory scaling Steimle, R.F.
 2007
 47 4-5 p. 585-592
8 p.
 artikel
73 Study of nanocrystal memory integration in a Flash-like NOR device Gerardi, Cosimo
 2007
 47 4-5 p. 593-597
5 p.
 artikel
74 Templates for LaAlO3 epitaxy on silicon Boulenc, P.
 2007
 47 4-5 p. 709-713
5 p.
 artikel
75 Test structures for dielectric spectroscopy of thin films at microwave frequencies Delmonte, N.
 2007
 47 4-5 p. 682-685
4 p.
 artikel
76 The characterization of retention properties of metal–ferroelectric (PbZr0.53Ti0.47O3)–insulator (Dy2O3, Y2O3)–semiconductor devices Su, Yu-Di
 2007
 47 4-5 p. 619-622
4 p.
 artikel
77 The influence of hydrogen and nitrogen on the formation of Si nanoclusters embedded in sub-stoichiometric silicon oxide layers Caristia, Liliana
 2007
 47 4-5 p. 777-780
4 p.
 artikel
78 Total ionizing dose reliability of thin SiO2 in PowerMOSFET devices Cascio, A.
 2007
 47 4-5 p. 815-818
4 p.
 artikel
79 Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition Lu, Y.
 2007
 47 4-5 p. 722-725
4 p.
 artikel
80 Volatility and vapourisation characterisation of new precursors Rushworth, Simon
 2007
 47 4-5 p. 718-721
4 p.
 artikel
81 VSP – A gate stack analyzer Karner, M.
 2007
 47 4-5 p. 704-708
5 p.
 artikel
82 WODIM 2008 – First Announcement 15th Workshop on Dielectrics in Microelectronics June 22–26, 2008 in Bad Saarow (Berlin), Germany 2007
 47 4-5 p. 838-
1 p.
 artikel
83 Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror Martín-Martínez, J.
 2007
 47 4-5 p. 665-668
4 p.
 artikel
                             83 gevonden resultaten
 
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