nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A 3-D Circuit Model to evaluate CDM performance of ICs
|
Sowariraj, M.S.B. |
|
2005 |
45 |
9-11 |
p. 1425-1429 5 p. |
artikel |
2 |
A Dedicated TLP Set-Up to Investigate the ESD Robustness of RF Elements and Circuits
|
Wolf, Heinrich |
|
2005 |
45 |
9-11 |
p. 1421-1424 4 p. |
artikel |
3 |
Advanced electrical analysis of embedded memory cells using atomic force probing
|
Grützner, M. |
|
2005 |
45 |
9-11 |
p. 1509-1513 5 p. |
artikel |
4 |
A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications
|
Sozza, A. |
|
2005 |
45 |
9-11 |
p. 1617-1621 5 p. |
artikel |
5 |
A novel fast and versatile temperature measurement system for LDMOS transistors
|
Tazzoli, A. |
|
2005 |
45 |
9-11 |
p. 1742-1745 4 p. |
artikel |
6 |
A simple moisture diffusion model for the prediction of optimal baking schedules for plastic SMD packages
|
Lee, K.C. |
|
2005 |
45 |
9-11 |
p. 1668-1671 4 p. |
artikel |
7 |
Assessment of the Analytical Capabilities of Scanning Capacitance and Scanning Spreading Resistance Microscopy Applied to Semiconductor Devices
|
Stangoni, Maria |
|
2005 |
45 |
9-11 |
p. 1532-1537 6 p. |
artikel |
8 |
Assessment of the Trench IGBT reliability: low temperature experimental characterization
|
Azzopardi, S. |
|
2005 |
45 |
9-11 |
p. 1700-1705 6 p. |
artikel |
9 |
Author index (Generate from contents)
|
|
|
2005 |
45 |
9-11 |
p. I-III nvt p. |
artikel |
10 |
Automated setup for thermal imaging and electrical degradation study of power DMOS devices
|
Heer, M. |
|
2005 |
45 |
9-11 |
p. 1688-1693 6 p. |
artikel |
11 |
Basic Principles for Managing Foundry Programs
|
London, A. |
|
2005 |
45 |
9-11 |
p. 1285-1292 8 p. |
artikel |
12 |
Biaxial initial stress characterization of bilayer gold RF-switches
|
Yacine, K. |
|
2005 |
45 |
9-11 |
p. 1776-1781 6 p. |
artikel |
13 |
Characterisation of dopants distribution using electron holography and FIB-based lift-off preparation
|
Muehle, U. |
|
2005 |
45 |
9-11 |
p. 1558-1561 4 p. |
artikel |
14 |
Characterization of a 0.13 μm CMOS Link Chip using Time Resolved Emission (TRE)
|
Stellari, Franco |
|
2005 |
45 |
9-11 |
p. 1550-1553 4 p. |
artikel |
15 |
Circuit-internal signal measurements with a needle sensor
|
Hartmann, C. |
|
2005 |
45 |
9-11 |
p. 1505-1508 4 p. |
artikel |
16 |
Comparative analysis of accelerated ageing effects on power RF LDMOS reliability
|
Belaïd, M.A. |
|
2005 |
45 |
9-11 |
p. 1732-1737 6 p. |
artikel |
17 |
Correlation between Experimental Results and FE Simulations to Evaluate Lead-Free BGA Assembly Reliability
|
Guédon-Gracia, A. |
|
2005 |
45 |
9-11 |
p. 1652-1657 6 p. |
artikel |
18 |
Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 μm CMOS bipolar transistors
|
Benoit, P. |
|
2005 |
45 |
9-11 |
p. 1800-1806 7 p. |
artikel |
19 |
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues
|
Verzellesi, G. |
|
2005 |
45 |
9-11 |
p. 1585-1592 8 p. |
artikel |
20 |
Degradation of high-K LA2O3 gate dielectrics using progressive electrical stress
|
Miranda, E. |
|
2005 |
45 |
9-11 |
p. 1365-1369 5 p. |
artikel |
21 |
Dielectric reliability of stacked Al2O3–HfO2 MIS capacitors with cylinder type for improving DRAM data retention characteristics
|
Seo, J.Y. |
|
2005 |
45 |
9-11 |
p. 1360-1364 5 p. |
artikel |
22 |
Die repackaging for failure analysis
|
Barberan, S. |
|
2005 |
45 |
9-11 |
p. 1576-1580 5 p. |
artikel |
23 |
Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure
|
Guitard, N. |
|
2005 |
45 |
9-11 |
p. 1415-1420 6 p. |
artikel |
24 |
Dynamic Laser Stimulation Case Studies
|
Beaudoin, F. |
|
2005 |
45 |
9-11 |
p. 1538-1543 6 p. |
artikel |
25 |
Dynamic stress-induced high-frequency noise degradations in nMOSFETs
|
Yu, Chuanzhao |
|
2005 |
45 |
9-11 |
p. 1794-1799 6 p. |
artikel |
26 |
Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect line-via test structures
|
Roy, Arijit |
|
2005 |
45 |
9-11 |
p. 1443-1448 6 p. |
artikel |
27 |
Effect of vacuum break after the barrier layer deposition on the electromigration performance of aluminum based line interconnects
|
Tan, Cher Ming |
|
2005 |
45 |
9-11 |
p. 1449-1454 6 p. |
artikel |
28 |
Effects of uni-axial mechanical stress on IGBT characteristics
|
Usui, Masanori |
|
2005 |
45 |
9-11 |
p. 1682-1687 6 p. |
artikel |
29 |
Electrical Performance Evaluation of FIB Edited Circuits through Chip Backside Exposing Shallow Trench Isolations
|
Schlangen, R. |
|
2005 |
45 |
9-11 |
p. 1544-1549 6 p. |
artikel |
30 |
Electroluminescence spectroscopy for reliability investigations of 1.55 μm bulk semiconductor optical amplifier
|
Huyghe, S. |
|
2005 |
45 |
9-11 |
p. 1593-1599 7 p. |
artikel |
31 |
ElectroStatic Discharge Fault Localization by Laser Probing
|
Grauby, S. |
|
2005 |
45 |
9-11 |
p. 1482-1486 5 p. |
artikel |
32 |
Elimination of surface state induced edge transistors in high voltage NMOSFETs for flash memory devices
|
Lee, Jin-Wook |
|
2005 |
45 |
9-11 |
p. 1394-1397 4 p. |
artikel |
33 |
ESD circuit model based protection network optimisation for extended-voltage NMOS drivers
|
Vassilev, V. |
|
2005 |
45 |
9-11 |
p. 1430-1435 6 p. |
artikel |
34 |
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET
|
Busatto, G. |
|
2005 |
45 |
9-11 |
p. 1711-1716 6 p. |
artikel |
35 |
Extraction of Accurate Thermal Compact Models for Fast Electro-Thermal Simulation of IGBT Modules in Hybrid Electric Vehicles
|
Ciappa, M. |
|
2005 |
45 |
9-11 |
p. 1694-1699 6 p. |
artikel |
36 |
Failure Analysis Issues in Microelectromechanical Systems (MEMS)
|
Walraven, J.A. |
|
2005 |
45 |
9-11 |
p. 1750-1757 8 p. |
artikel |
37 |
Failure analysis of micro-heating elements suspended on thin membranes
|
Briand, D. |
|
2005 |
45 |
9-11 |
p. 1786-1789 4 p. |
artikel |
38 |
Failure mechanisms and qualification testing of passive components
|
Post, H.A. |
|
2005 |
45 |
9-11 |
p. 1626-1632 7 p. |
artikel |
39 |
Failure predictive model of capacitive RF-MEMS
|
Mellé, S. |
|
2005 |
45 |
9-11 |
p. 1770-1775 6 p. |
artikel |
40 |
FTIR spectroscopy for the hermeticity assessment of micro-cavities
|
Veyrié, D. |
|
2005 |
45 |
9-11 |
p. 1764-1769 6 p. |
artikel |
41 |
Gate stress effect on low temperature data retention characteristics of split-gate flash memories
|
Hu, Ling-Chang |
|
2005 |
45 |
9-11 |
p. 1331-1336 6 p. |
artikel |
42 |
Hot carrier and soft breakdown effects on LNA performance for ultra wideband communications
|
Xiao, E. |
|
2005 |
45 |
9-11 |
p. 1382-1385 4 p. |
artikel |
43 |
Hot-carrier reliability of 20V MOS transistors in 0.13 μm CMOS technology
|
Rey-Tauriac, Y. |
|
2005 |
45 |
9-11 |
p. 1349-1354 6 p. |
artikel |
44 |
Hydrogen-related influence of the metallization stack on characteristics and reliability of a trench gate oxide
|
Nelhiebel, M. |
|
2005 |
45 |
9-11 |
p. 1355-1359 5 p. |
artikel |
45 |
Image alignment for 3D reconstruction in a SEM
|
Pintus, Ruggero |
|
2005 |
45 |
9-11 |
p. 1581-1584 4 p. |
artikel |
46 |
Impact of semiconductors material on IR Laser Stimulation signal
|
Firiti, A. |
|
2005 |
45 |
9-11 |
p. 1465-1470 6 p. |
artikel |
47 |
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs
|
Bravaix, A. |
|
2005 |
45 |
9-11 |
p. 1370-1375 6 p. |
artikel |
48 |
Innovative Methodology for Predictive Reliability of Intelligent Power Devices Using Extreme Electro-thermal Fatigue
|
Khong, B. |
|
2005 |
45 |
9-11 |
p. 1717-1722 6 p. |
artikel |
49 |
Innovative packaging technique for backside optical testing of wire-bonded chips
|
Tosi, A. |
|
2005 |
45 |
9-11 |
p. 1493-1498 6 p. |
artikel |
50 |
Intermittent contact scanning capacitance microscopy-An improved method for 2D doping profiling
|
Breitschopf, Peter |
|
2005 |
45 |
9-11 |
p. 1568-1571 4 p. |
artikel |
51 |
Investigation of charging mechanisms in metal-insulator-metal structures
|
Exarchos, M. |
|
2005 |
45 |
9-11 |
p. 1782-1785 4 p. |
artikel |
52 |
Investigation on seal-ring rules for IC product reliability in 0.25-μm CMOS technology
|
Chen, Shih-Hung |
|
2005 |
45 |
9-11 |
p. 1311-1316 6 p. |
artikel |
53 |
Isolating failing sites in IC packages using time domain reflectometry: Case studies
|
Abessolo-Bidzo, D. |
|
2005 |
45 |
9-11 |
p. 1639-1644 6 p. |
artikel |
54 |
Issues in electromagnetic compatibility of integrated circuits: emission and susceptibility
|
Sicard, E. |
|
2005 |
45 |
9-11 |
p. 1277-1284 8 p. |
artikel |
55 |
Layout dependency induced deviation from Poisson area scaling in BEOL dielectric reliability
|
Li, Y.-L. |
|
2005 |
45 |
9-11 |
p. 1299-1304 6 p. |
artikel |
56 |
Lifetime prediction on the base of mission profiles
|
Ciappa, Mauro |
|
2005 |
45 |
9-11 |
p. 1293-1298 6 p. |
artikel |
57 |
Light Emission to Time Resolved Emission For IC Debug and Failure Analysis
|
Remmach, M. |
|
2005 |
45 |
9-11 |
p. 1476-1481 6 p. |
artikel |
58 |
Localization and physical analysis of dielectric weaknesses for state-of-the-art deep trench based DRAM products
|
Neumann, G. |
|
2005 |
45 |
9-11 |
p. 1520-1525 6 p. |
artikel |
59 |
Localization of Marginal Circuits for Yield Diagnostics Utilizing a Dynamic Laser Stimulation Probing System
|
Liao, J.Y. |
|
2005 |
45 |
9-11 |
p. 1554-1557 4 p. |
artikel |
60 |
Moisture diffusion in Printed Circuit Boards: Measurements and Finite- Element- Simulations
|
Weide-Zaage, Kirsten |
|
2005 |
45 |
9-11 |
p. 1662-1667 6 p. |
artikel |
61 |
Negative bias temperature instability mechanisms in p-channel power VDMOSFETs
|
Stojadinović, N. |
|
2005 |
45 |
9-11 |
p. 1343-1348 6 p. |
artikel |
62 |
New experimental approach for failure prediction in electronics: Topography and deformation measurement complemented with acoustic microscopy
|
Richard, Isaline |
|
2005 |
45 |
9-11 |
p. 1645-1651 7 p. |
artikel |
63 |
NIR laser stimulation for dynamic timing analysis
|
Sanchez, K. |
|
2005 |
45 |
9-11 |
p. 1459-1464 6 p. |
artikel |
64 |
Non-destructive identification of open circuit in wiring on organic substrate with high wiring density covered with solder resist
|
Tan, Cher Ming |
|
2005 |
45 |
9-11 |
p. 1572-1575 4 p. |
artikel |
65 |
Non-destructive Testing Technique for MOSFET’s Characterisation during Soft-Switching ZVS Operations
|
Iannuzzo, Francesco |
|
2005 |
45 |
9-11 |
p. 1738-1741 4 p. |
artikel |
66 |
[No title]
|
Labat, N. |
|
2005 |
45 |
9-11 |
p. 1275-1276 2 p. |
artikel |
67 |
On state breakdown in PHEMTs and its temperature dependence
|
Cova, P. |
|
2005 |
45 |
9-11 |
p. 1605-1610 6 p. |
artikel |
68 |
Out of plane vs in plane flexural behaviour of thin polysilicon films: Mechanical characterization and application of the Weibull approach
|
Cacchione, F. |
|
2005 |
45 |
9-11 |
p. 1758-1763 6 p. |
artikel |
69 |
Oxide charge measurements in EEPROM devices
|
De Nardi, C. |
|
2005 |
45 |
9-11 |
p. 1514-1519 6 p. |
artikel |
70 |
Performances and limitations analyses of PHEMT and MHEMT for applications in high bit rate fiber-optic systems
|
Pajona, O. |
|
2005 |
45 |
9-11 |
p. 1622-1625 4 p. |
artikel |
71 |
Photon emission microscopy of inter/intra chip device performance variations
|
Polonsky, S. |
|
2005 |
45 |
9-11 |
p. 1471-1475 5 p. |
artikel |
72 |
Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale
|
Aguilera, L. |
|
2005 |
45 |
9-11 |
p. 1390-1393 4 p. |
artikel |
73 |
Prediction of Delamination Related IC & Packaging Reliability Problems
|
van Driel, W.D. |
|
2005 |
45 |
9-11 |
p. 1633-1638 6 p. |
artikel |
74 |
Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs
|
Hayama, K. |
|
2005 |
45 |
9-11 |
p. 1376-1381 6 p. |
artikel |
75 |
Reliability challenges for copper low-k dielectrics and copper diffusion barriers
|
Tökei, Zs. |
|
2005 |
45 |
9-11 |
p. 1436-1442 7 p. |
artikel |
76 |
Reliability enhancement with the aid of transient infrared thermal analysis of smart Power MOSFETs during short circuit operation
|
Irace, A. |
|
2005 |
45 |
9-11 |
p. 1706-1710 5 p. |
artikel |
77 |
Reliability for Recessed Channel Structure n-MOSFET
|
Seo, J.Y. |
|
2005 |
45 |
9-11 |
p. 1317-1320 4 p. |
artikel |
78 |
Reliability improvement by the suppression of keyhole generation in W-plug vias
|
Kim, Jong Hun |
|
2005 |
45 |
9-11 |
p. 1455-1458 4 p. |
artikel |
79 |
Reliability investigations on LTG-GaAs photomixers for THz generation based on optical heterodyning
|
Sydlo, C. |
|
2005 |
45 |
9-11 |
p. 1600-1604 5 p. |
artikel |
80 |
Reliability of Contacts for Press-Pack High-Power Devices
|
Vobecký, J. |
|
2005 |
45 |
9-11 |
p. 1676-1681 6 p. |
artikel |
81 |
Reliability Potential Of Epoxy Based Encapsulants For Automotive Applications
|
Braun, T. |
|
2005 |
45 |
9-11 |
p. 1672-1675 4 p. |
artikel |
82 |
Reliability predictions in electronic industrial applications
|
Cassanelli, G. |
|
2005 |
45 |
9-11 |
p. 1321-1326 6 p. |
artikel |
83 |
Reliability screening through electrical testing for press-fit alternator power diode in automotive application
|
Tan, Cher Ming |
|
2005 |
45 |
9-11 |
p. 1723-1727 5 p. |
artikel |
84 |
Robust, versatile, direct low-frequency noise characterization method for material/process quality control using cross-shaped 4-terminal devices
|
Kerlain, A. |
|
2005 |
45 |
9-11 |
p. 1327-1330 4 p. |
artikel |
85 |
Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions
|
Ismail, N. |
|
2005 |
45 |
9-11 |
p. 1611-1616 6 p. |
artikel |
86 |
Seebeck Effect Detection on Biased Device without OBIRCH Distortion Using FET Readout
|
Brahma, Sanjib Kumar |
|
2005 |
45 |
9-11 |
p. 1487-1492 6 p. |
artikel |
87 |
Specification and use of pulsed current profiles for ultracapacitors power cycling
|
Lajnef, W. |
|
2005 |
45 |
9-11 |
p. 1746-1749 4 p. |
artikel |
88 |
SRAM cell defect isolation methodology by sub micron probing technique
|
Sibileau, F. |
|
2005 |
45 |
9-11 |
p. 1562-1567 6 p. |
artikel |
89 |
STEM role in failure analysis
|
Iannello, M.-A. |
|
2005 |
45 |
9-11 |
p. 1526-1531 6 p. |
artikel |
90 |
Stress Mechanism about Field Lightning Surge of High Voltage BJT Based Line Driver for ADSL System
|
Jeong, Jae-Seong |
|
2005 |
45 |
9-11 |
p. 1398-1401 4 p. |
artikel |
91 |
Study of Area Scaling Effect on Integrated Circuit Reliability Based on Yield Models
|
Hong, Changsoo |
|
2005 |
45 |
9-11 |
p. 1305-1310 6 p. |
artikel |
92 |
The impact of static and dynamic degradation on SOI “smart-cut” floating body MOSFETs
|
Exarchos, M.A. |
|
2005 |
45 |
9-11 |
p. 1386-1389 4 p. |
artikel |
93 |
Thermal and electrostatic reliability characterization in RF MEMS switches
|
Duong, Q.-H. |
|
2005 |
45 |
9-11 |
p. 1790-1793 4 p. |
artikel |
94 |
Trench insulated gate bipolar transistors submitted to high temperature bias stress
|
Maïga, C.O. |
|
2005 |
45 |
9-11 |
p. 1728-1731 4 p. |
artikel |
95 |
Trends and challenges to ESD and Latch-up designs for nanometer CMOS technologies
|
Boselli, G. |
|
2005 |
45 |
9-11 |
p. 1406-1414 9 p. |
artikel |
96 |
Tunnel oxide degradation under pulsed stress
|
Ghidini, G. |
|
2005 |
45 |
9-11 |
p. 1337-1342 6 p. |
artikel |
97 |
Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast
|
Buzzo, M. |
|
2005 |
45 |
9-11 |
p. 1499-1504 6 p. |
artikel |
98 |
Vibration lifetime modelling of PCB assemblies using steinberg model
|
Dehbi, A. |
|
2005 |
45 |
9-11 |
p. 1658-1661 4 p. |
artikel |
99 |
Voltage stress-induced hot carrier effects on SiGe HBT VCO
|
Yu, Chuanzhao |
|
2005 |
45 |
9-11 |
p. 1402-1405 4 p. |
artikel |