| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A 2-bit highly scalable nonvolatile memory cell with two electrically isolated charge trapping sites
|
Man, Tsz Yin
|
|
2005
|
45 |
2 |
p. 349-354
6 p.
|
artikel
|
| 2 |
Advanced rail clamp networks for ESD protection
|
Stockinger, Michael
|
|
2005
|
45 |
2 |
p. 211-222
12 p.
|
artikel
|
| 3 |
A MOSFET power supply clamp with feedback enhanced triggering for ESD protection in advanced CMOS technologies
|
Smith, Jeremy C.
|
|
2005
|
45 |
2 |
p. 201-210
10 p.
|
artikel
|
| 4 |
A new multi-finger SCR-based structure for efficient on-chip ESD protection
|
Azaı̈s, F.
|
|
2005
|
45 |
2 |
p. 233-243
11 p.
|
artikel
|
| 5 |
A note on trap recombination in high voltage device structures
|
Benda, Vitezslav
|
|
2005
|
45 |
2 |
p. 397-401
5 p.
|
artikel
|
| 6 |
A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: Part I—ESD
|
Voldman, Steven H.
|
|
2005
|
45 |
2 |
p. 323-340
18 p.
|
artikel
|
| 7 |
Capacitively coupled transmission line pulsing cc-TLP––a traceable and reproducible stress method in the CDM-domain
|
Wolf, Heinrich
|
|
2005
|
45 |
2 |
p. 279-285
7 p.
|
artikel
|
| 8 |
Comprehensive ESD protection for RF inputs
|
Hyvonen, Sami
|
|
2005
|
45 |
2 |
p. 245-254
10 p.
|
artikel
|
| 9 |
Data communication
|
Stojcev, Mile
|
|
2005
|
45 |
2 |
p. 403-404
2 p.
|
artikel
|
| 10 |
ESD–RF co-design methodology for the state of the art RF-CMOS blocks
|
Vassilev, V.
|
|
2005
|
45 |
2 |
p. 255-268
14 p.
|
artikel
|
| 11 |
ESD SPICE model and measurements for a hard disk drive
|
Wallash, Al
|
|
2005
|
45 |
2 |
p. 305-311
7 p.
|
artikel
|
| 12 |
Evaluation of wire bonding performance, process conditions, and metallurgical integrity of chip on board wire bonds
|
Rooney, Daniel T.
|
|
2005
|
45 |
2 |
p. 379-390
12 p.
|
artikel
|
| 13 |
High abstraction level permutational ESD concept analysis
|
Streibl, M.
|
|
2005
|
45 |
2 |
p. 313-321
9 p.
|
artikel
|
| 14 |
[No title]
|
Stojcev, Mile
|
|
2005
|
45 |
2 |
p. 407-408
2 p.
|
artikel
|
| 15 |
[No title]
|
Stojcev, Mile
|
|
2005
|
45 |
2 |
p. 405-406
2 p.
|
artikel
|
| 16 |
[No title]
|
Stadler, Wolfgang
|
|
2005
|
45 |
2 |
p. 199-200
2 p.
|
artikel
|
| 17 |
Percolative approach for failure time prediction of thin film interconnects under high current stress
|
Misra, E.
|
|
2005
|
45 |
2 |
p. 391-395
5 p.
|
artikel
|
| 18 |
Real-world printed circuit board ESD failures
|
Olney, Andrew
|
|
2005
|
45 |
2 |
p. 287-295
9 p.
|
artikel
|
| 19 |
Reliability of vacuum packaged MEMS gyroscopes
|
Choa, S.H.
|
|
2005
|
45 |
2 |
p. 361-369
9 p.
|
artikel
|
| 20 |
Single event transient effects in a voltage reference
|
Adell, P.C.
|
|
2005
|
45 |
2 |
p. 355-359
5 p.
|
artikel
|
| 21 |
Substrate current and degradation of n-channel polycrystalline silicon thin-film transistors
|
Hastas, N.A.
|
|
2005
|
45 |
2 |
p. 341-348
8 p.
|
artikel
|
| 22 |
Test circuits for fast and reliable assessment of CDM robustness of I/O stages
|
Stadler, W.
|
|
2005
|
45 |
2 |
p. 269-277
9 p.
|
artikel
|
| 23 |
TLP analysis of 0.125 μm CMOS ESD input protection circuit
|
Chaine, Michael
|
|
2005
|
45 |
2 |
p. 223-231
9 p.
|
artikel
|
| 24 |
Transient analysis of the impact stage of wirebonding on Cu/low-K wafers
|
Yeh, Chang-Lin
|
|
2005
|
45 |
2 |
p. 371-378
8 p.
|
artikel
|
| 25 |
Transient latch-up: experimental analysis and device simulation
|
Bargstädt-Franke, S.
|
|
2005
|
45 |
2 |
p. 297-304
8 p.
|
artikel
|
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